• Proceedings of the KIEE Conference
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• 1997.07d
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• pp.1222-1225
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• 1997

A gaseous oxygen detector has been developed in a configuration of Pd-$SnO_x$-$Si_3N_4$-$SiO_2$-Si-Al with highly resistive $SnO_x$ layer as the oxygen adsorptive element. In this paper, we present the characteristics of the device in response to oxygen adsoption/desorption under applied d.c. bias. Experimental results showed that the oxygen adsorptive response by the device was reduced significantly under a positive gate bias, for all experimental regions of $O_2$ partial pressure. On the other hand, the application of a negative gate bias increased the device's adsorptive response of oxgyen. A device model concerning this electroadsorption/desorption behavior of the device is provided.

• JSTS:Journal of Semiconductor Technology and Science
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• v.13 no.2
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• pp.127-138
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• 2013

The impact of Empty Space layer in the channel region of a Double Gate (i.e. ESDG) MOSFET has been studied, by monitoring the DC, RF as well as the digital performance of the device using ATLAS 3D device simulator. The influence of temperature variation on different devices, i.e. Double Gate incorporating Empty Space (ESDG), Empty Space in Silicon (ESS), Double Gate (DG) and Bulk MOSFET has also been studied. The electrical performance of scaled ESDG MOSFET shows high immunity against Short Channel Effects (SCEs) and temperature variations. The present work also includes the linearity performance study in terms of $VIP_2$ and $VIP_3$. The proper bias point to get the higher linearity along with the higher transconductance and device gain has also been discussed.

• Journal of the Korean Society of Surveying, Geodesy, Photogrammetry and Cartography
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• v.29 no.6
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• pp.601-611
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• 2011

The paper deals with the selection of 3D display devices in accordance with the user's conveniences and accuracy of spatial information by applying 3D display devices to Spatial Information Update System (SIUS) which generate edit and update digital thematic maps. After applying different manufacturer's 3D display devices to SIUS, aerial images acquired from the stereo images were displayed through the devices and spatial information was extracted from the displayed 3D images. Assessment of 3D display devices were based on quantitative and qualitative analysis on accuracy of spatial information and user's conveniences. Planar's PL2020 and Redrover's Tru3Di 3D monitor has expressed outstanding display environment in 3D related tasks for the generation of spatial information compared to other 3D display devices. System improvement is expected regarding accuracy of spatial information, work efficiency and user's conveniences.

• Transactions on Electrical and Electronic Materials
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• v.18 no.2
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• pp.70-73
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• 2017

We investigated n-i-p type single junction hydrogenated amorphous silicon oxide solar cells. These cells were without front surface texture or back reflector. Maximum power point efficiency of these cells showed that an optimized device structure is needed to get the best device output. This depends on the thickness and defect density ($N_d$) of the active layer. A typical 10% photovoltaic device conversion efficiency was obtained with a $N_d=8.86{\times}10^{15}cm^{-3}$ defect density and 630 nm active layer thickness. Our investigation suggests a correlation between defect density and active layer thickness to device efficiency. We found that amorphous silicon solar cell efficiency can be improved to well above 10%.

• Journal of Broadcast Engineering
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• v.17 no.3
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• pp.491-502
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• 2012

Flat panel-based parallax barrier or lenticular based 3D display devices that have been developed recently are designed to feel depth. In order to see a three-dimensional(3D) image by the display device, a multi-view image displayed on the flat panel must be regenerated from images of multi-views using a subsampling method. Previous subsampling methods are focused on reducing crosstalk. In this paper, we focus on a misalignment that is occurred on manufacture process of slanted parallax barrier based autostereoscopic display device. Therefore, we propose a interleaving method that considers tilt of slanted parallax barrier, aperture size, and distance between an autostereoscopic display device and a viewer to see a 3D image regardless of a viewer position.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.28 no.5
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• pp.430-433
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• 2017

This paper presents a S/C/X-band LNA MMIC with resistive feedback structure in 0.25 um GaN HEMT process. The GaN devices have advantages as a high output power device having high breakdown voltage, energy band gap and stability at high temperature. Since the receiver using the GaN device with high linearity can be implemented without a limiter, the noise figure of the receiver can be improved and the size of receiver module can be reduced. The proposed GaN LNA MMIC based on 0.25 um GaN HEMT device is achieved the gain of > 15 dB, the noise figure of < 3 dB, the input return loss of > 13 dB, and the output return loss of > 8 dB in the S/C/X-band. The current consumption of GaN LNA MMIC is 70 mA with the drain voltage 20 V and the gate voltage -3 V.

• Transactions on Electrical and Electronic Materials
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• v.16 no.3
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• pp.156-161
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• 2015

In this paper, we present simulation results obtained using SILVACO TCAD tools for a 3-D silicon on insulator (SOI) n-FinFET structure with a gate length of 8 nm at 300K. The effects of variations of the device’s key electrical parameters, such as threshold voltage, subthreshold slope, transconductance, drain induced barrier lowering, oncurrent, leakage current and on/off current ratio are presented and analyzed. We will also describe some simulation results related to the influence of the gate work function variations on the considered structure. These variations have a direct impact on the electrical device characteristics. The results show that the threshold voltage decreases when we reduce the gate metal work function Φ_m. As a consequence, the behavior of the leakage current improves with increased Φ_m. Therefore, the short channel effects in real 3-D FinFET structures can reasonably be controlled and improved by proper adjustment of the gate metal work function.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2013.10a
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• pp.898-899
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• 2013

In recent years, logistics tracking Device using to improve logistics efficiency are being extensively researched. The purpose of this paper is to Enhancement technology for unwanted emission of logistics tracking device usable cargo container security transport.

• 재활복지
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• v.15 no.2
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• pp.147-173
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• 2011

The purpose of this study was to develop a stuttering therapy device to aid in stutter therapy. The research method used for this study was as follows: First, the stuttering therapy device based on analysis of the prolonged speech method used at home and abroad was designed to achieve the goal of research. Second, the stuttering therapy device was to be developed to maintain a vocalization state, to use bio-feedback visualization, to have enough inspiration, to use Korean language in this device, and to use transfer and maintenance training in daily life. Third, the stuttering therapy device effectiveness was to be verified through use in clinical cases. The results of subjects receiving speech therapy and using the breathing control prolonged speech device and SI(stuttering Interview) evaluation programs for 3 months were as follows: For subject A, the stuttered word rate was reduced from 3.20 SW/M to 0.5 SW/M. For subject B, the stuttered word rate was reduced from 1.90 SW/M to 0.75 SW/M. For subject C, the stuttered word rate was reduced from 3.37 SW/M to 0.34 SW/M. For Subject D, the stuttered word rate was reduced from 0.51 SW/M to 0 SW/M. Follow-up evaluations verified the effectiveness of how the stuttering therapy device can reduce subjects' SW/M.

• Journal of Korean Society on Water Environment
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• v.22 no.3
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• pp.475-481
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• 2006

The major problem in closing water like lakes and ponds in Korea is that because they are exposed to surrounding, so easily polluted. The pollution in closing water can be caused by not only artificial factor like sewage but also natural factor like elution from sediment. For insurance of safe and satisfied water source, lots of studies and projects are now going on. In this study, we examined the behavior and effect of microbubble ($3{\sim}10{\mu}m$) produced by device called O.S.D (Oxygen Solubillization Device) in small size pond. The value of oxygen transfer coefficient ($K_La$) was 0.68/min independently of air flow rate, 6.5 times higher than commercial aeration stone and the variation of nitrogen concentration was $0.008NO_3/O_2$, DO concentration was potentially saturated for 24 hr. From the results of pilot plant, SOD of experiment (O.S.D) and control were $12.18gO_2{\cdot}m^{-2}{\cdot}d^{-1}$ and $47.95gO_2{\cdot}m^{-2}{\cdot}d^{-1}$ respectively. In conclusion, because O.S.D has extraordinary physico-chemical characteristics, it can contribute to improvement of both the waterbody and the sediment environment.