• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.8
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• pp.15-25
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• 1997

The integration method of carier concentrations to redcue the discretization error of th box integratio method used in the discretization of the three-dimensional poisson's equation is presented. The carrier concentration is approximated in the closed form as an exponential function of the linearly varying potential in the element. The presented method is implemented in the three-dimensional poisson's equation solver running under the windows 95. The accuracy and the convergence chaacteristics of the three-dimensional poisson's equation solver are compared with those of DAVINCI for the PN junction diode and the n-MOSFET under the thermal equilibrium and the DC reverse bias. The potential distributions of the simulatied devices from the three-dimensional poisson's equation solver, compared with those of DAVINCI, has a relative error within 2.8%. The average number of iterations needed to obtain the solution of the PN junction diode and the n-MOSFET using the presented method are 11.47 and 11.16 while the those of DAVINCI are 21.73 and 23.0 respectively.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.3
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• pp.105-113
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• 1997

We constructed a very accurate fiber bragg grating sensor system using an unbalanced mach-zehnder interferometer which converts the measurand-induced bragg wavelength shift to phase change of th einterference signal. With a shielded reference grating, output phase drift which orginates from the thermal drift on the interferometer was compensated. Mesured accuracy of the constructed system was 0.03 .deg. C and 0.26.mu. strain for temperature and strain measuremtn, respectively. It is over 300 times better resolution compared to the conventional optical spectrum analyzer which has 0.1nm wavelength resolution capability.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.7
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• pp.30-36
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• 1997

Bump bonded piezoesistive silicon accelerometer was fabricated by the porous silicon micromachining and th eprocess technique of integrated circuit. The output voltage of the accelerometer fabricated on (111)-oreiented Si substrates with n/n$^{+}$n triple layers showed good linear characteristic of less than 1%. The measured sensitivity and the resonant frequency was about 743 .mu.V/g and 2.04 kHz, respectively. And the transverse sensitivity of 5.2% was measured from the accelerometer. Also, to investigate an influence on the output characteristics of the sensor due to bump bonding, the values of the piezoresistors were measured through thermal-cycling test in the temperature variation form -50 to 120.deg. C. Then, there was 0.014% resistance changes about 3.61 k.ohm., so sthe output charcteristics of the sensor was less affected by bump bonding.g.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.4
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• pp.93-100
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• 1998

Pyoelectric infrared detectors based on La-modified PbTiO3 (PLT) thin films have been fabricated by RF magnetron sputtering and micromachining technology. The detectors form Pb$_{1-x}$ La$_{x}$Ti$_{1-x}$ O$_{3}$ (x=0.05) thin film ferroelectric capacitors epitaxially grown by RF magnetron sputtering on Pt/MgO (100) substrate. The sputtered PLT thin film exhibits highly c-axis oriented crystal struture that no poling trealization for sensing applications is required. This is an essential factor to increase the yield for realization of an infrared image sensor. Micromachining technology is used to lower the thermal mass of the detector by giving maximum sensor efficiency. Polyimide is coated on top of the sensing elements to support the fragile structure and the backside of the MgO substrate is selectively eteched to reduce the heat loss. The sensing element exhibited a very high detectivity D* of 8.5*10$^{8}$ cm..root.Hz/W at room temperature and it is about 100 times higher than the case of micromachining technology is not used. a sensing system that detects the position as well as the existence of a human body is realized using the array sensor.sor.

• Transactions on Electrical and Electronic Materials
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• v.12 no.3
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• pp.89-92
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• 2011

Hydrogenated amorphous carbon (a-C:H) films were deposited by plasma enhanced chemical vapor deposition on silicon substrates. a-C:H thin film was irradiated to a typical He-Cd laser to study its emitting properties. The photoluminescence (PL) intensity during the irradiation achieved a maximum value when 2,000 seconds elapsed. Fourier transform infrared measurement revealed a-C:H thin film suffered transformation from a polymer-like to graphite-like phase during laser irradiation. Thermal annealing was done at various temperatures, ranging from room temperature to $400^{\circ}C$ in the atmosphere, to investigate structural changes in a-C:H film by heat generation during the emission. PL intensity of a-C:H thin film increased 1.5 times without apparent structural change, as annealing temperature increased up to $200^{\circ}C$. However, a-C:H film above $200^{\circ}C$ exhibited significant decrease of PL accompanying dehydrogenation. This led to a red shift of the PL peak.

• The Bulletin of The Korean Astronomical Society
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• v.44 no.2
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• pp.51.4-51.4
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• 2019

We started a systematic observational study of the 22 GHz water and 44 GHz class I methanol masers in 87 high-mass young stellar objects (HM-YSOs) as a KaVA large program (LP). The primary goal is to understand dynamical evolution of HM-YSOs and their circumstellar structures by measuring spatial distributions and 3-dimensional velocity fields of multiple maser species. In the first-year observations (2016-2017), we made snap-shot imaging surveys of 25 water and 19 methanol maser sources. In the second-year observations (2018-2019), we have carried out monitoring observations of 19 water and 3 methanol maser sources that were selected on the basis of the first-year survey results. By combining follow-up observations with VERA (distances), JVN/EAVN (6.7 GHz methanol masers), and ALMA cycles 3 and 6 (thermal lines/continuum), we will provide novel information on physical properties (density, temperature, size, mass), 3D dynamical structures of disk/jet/outflow/infalling envelope, and relationship between evolutionary of HM-YSOs. In this presentation, we will report the current status and future plans of our KaVA large program.

• Journal of the Institute of Electronics and Information Engineers
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• v.52 no.5
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• pp.51-57
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• 2015

In this paper, in order to design the A / D converter with a high resolution of 14 bits or more for the biological signal processing, CMOS delta sigma modulator that is a 1.8V power supply voltage - were designed. we propose a new structure of The fourth order delta-sigma modulator that needs four op amps but we use only two op amps. By using a time -interleaving technique, we can re-construct the circuit and reuse the op amps. Also, we proposed a KT/C noise reduction circuit to reduce the thermal noise from a noisy resistor. We adjust the size of sampling capacitor between sampling time and integrating time, so we can reduce almost a half of KT/C noise. The measurement results of the chip is fabricated using a Magna 0.18um CMOS n-well1 poly 6 metal process. Power consumption is $828{\mu}W$ from a 1.8V supply voltage. The peak SNDR is measured as a 75.7dB and 81.3dB of DR at 1kHz input frequency and 256kHz sampling frequency. Measurement results show that KT/C noise reduction circuit enhance the 3dB of SNDR. FOM of the circuit is calculated to be 142dB and 41pJ / step.

• Proceedings of the KWS Conference
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• 2005.06a
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• pp.91-93
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• 2005

Forming sheet metal by laser-induced thermal stresses (laser forming) has been extensively studied, and the research has focused on two-dimensional geometries using a multi-pass straight line scan. Recently there came out some useful studies or three-dimensional laser forming which is applied to doubly curved shapes. The task of 3D laser forming sheet metal is to determine a set of process parameters such as laser scanning paths, laser power and scanning speed that will make a given shape. New method for laser forming of a doubly curved surface by using geometrical information was proposed and verified by experiments. This method shows good performance in the sense of calculation time and accuracy compared to the inherent strain method.

• Journal of Information Display
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• v.2 no.3
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• pp.54-59
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• 2001

The role of $NH_3$ for vertical alignment of CNTs was investigated. The direct cause of the alignment was a dense distribution of catalytic metal particles, but which was kept catalytically active during the growth process by $NH_3$. This allows a dense nucleation of the CNTs, and consequently, assists vertical alignment through entanglement and mechanical leaning among the tubes. The CNTs grow in a base growth mode. Several evidences were presented including a direct cross-sectional TEM observation. Since Ni is consumed both by silicide reaction and by capture in the growing tube, the growth stops when Ni is completely depleted. This occurs faster for smaller particles, and thus a longer growth results in thin bottom with poor adhesion.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.9
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• pp.631-637
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• 2003

We have evaluated structural and electric, ferroelectric properties of PZT(30/70) thick film prepared by using 1,3-propanediol based sol-gel method on Pt/Ti/SiO$_2$/Si substrates. Rapid thermal annealing (RTA) is used to reduce the thermal stress and final furnace annealing is processed at $650^{\circ}C$. As the results of SEM analysis, we find that we get 350 nm in thickness for one coating and 1 $\mu$m for three times of coating. In the results of C-D analysis at 1 kHz, dielectric constant ($\varepsilon$$_{r}$) and dissipation factor were 886 and 0.03, respectively. C-V curve is shaped as a symmetrical butterfly. Leakage current density at 200 kV/cm is 1.23${\times}$10$^{-5}$ A/cm$^2$ and in the results of hysteresis loops measured at 150 kV/cm, the remnant polarization (P$_{r}$) and the coercive field (E$_{c}$) are 33.8 $\mu$C/cm$^2$ and 56.9 kV/cm, respectively. PZT(30/70) thick film exhibits relatively good ferroelectric, electric properties.s..