• Laser Solutions
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• v.11 no.2
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• pp.26-32
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• 2008

Micro lens array (MLA) is widely used in information technology (IT) industry fields, for examples such as a projection display, an optical power regulator, a micro mass spectrometer and for medical appliances. Recently, MLA have been fabricated and developed by using a reflow method, micro etching, electroplating, micromachining and laser local heating. Laser local thermal-expansion (LLTE) technology demonstrates the formation of microdots on the surface of polymer substrate, in this paper. We have also investigated the new direct fabrication method of placing the MLA on the surface of a SU-8 photoresist layer. We have obtained the 3D shape of the micro lens processed by UV laser irradiation and have experimentally verified the optimal process conditions.

• Korean Journal of Optics and Photonics
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• v.34 no.6
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• pp.241-247
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• 2023

We examine the spectral characteristics of laser-induced periodic surface structures (LIPSSs) formed on an amorphous silicon film irradiated by a 355-nm nanosecond laser. A Gaussian beam with a diameter of 196 ㎛ is used to perform a two-dimensional raster scan. The laser's pulse number is varied from 190 to 280, and its intensity is adjusted within 100-130 mJ/cm². LIPSSs with a periodicity of approximately 330 nm form on the surface of the Si film, aligned perpendicular to the laser's polarization. Transmission spectra of the samples show dips around 700 nm for transverse electric polarization and around 500 nm for transverse magnetic polarization. The features are investigated with a one-dimensional-grating model using a rigorous coupled-wave analysis. Simulations confirm that the observed dips are due to the resonant modes, depending on the polarization.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.3
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• pp.246-250
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• 2001

ZnO thin films for light emission device have been deposited on sapphire and silicon substrates by pulsed laser deposition technique(PLD). A Nd:YAG laser was used with the wavelength of355 nm. In order to investigate the emission properties of ZnO thin films, Pl measurements with an Ar ion laser a light source using an excitation wavelength of 351 nm and a power of 100 mW are used. All spectra were taken at room temperature by using a grating spectrometer and a photomultiplier detector. ZnO exhibited Pl bands centers around 390, 510 and 640 nm, labeled near ultra-violet(UV), green and orange bands. Structural properties of ZnO thin films are analyzed with X-ray diffraction(XRD).

• Journal of Sensor Science and Technology
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• v.20 no.1
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• pp.30-34
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• 2011

Single crystal of KCl doped with $Eu^{2+}$ ions was grown by the Czochralski method in the high pressure Ar gas(purity 99.999 %) atmosphere with chamber pressure from which the crystal with high quality was obtained. As grown $KCl:Eu^{2+}$ crystal was checked by X-ray diffraction. Luminescence properties of KCl:Eu are investigated by laser-excitation spectroscopy under 355 nm excitation at 14 and 295 K. The broad emission band due to the $Eu^{2+}$ 5d $\rightarrow$ 4f transition is peaked at 417 nm with full width at half maximum of about 20 and 30 nm.

• Proceedings of the KIEE Conference
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• 2000.11c
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• pp.422-424
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• 2000

ZnO thin films for light emission device have been deposited on sapphire and silicon substrates by pulsed laser deposition technique(PLD). A Nd:YAG laser was used with the wavelength of 355 nm. In order to investigate the emission properties of ZnO thin films, PL measurements with an Ar ion laser as a light source using an excitation wavelength of 351 nm and a power of 100 mW are used. All spectra were taken at room temperature by using a grating spectrometer and a photomultiplier detector. ZnO exhibited PL bands centered around 390, 510 and 640 nm, labeled near ultra-violet (UV), green and orange bands. Structural properties of ZnO thin films are analized with X-ray diffraction (XRD).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.539-542
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• 2000

ZnO thin films for light emission device have been deposited on sapphire and silicon substrates by pulsed laser deposition technique(PLD). A Nd:YAG laser was used with the wavelength of 355 nm. In order to investigate the emission properties of ZnO thin films, PL measurements with an Ar ion laser as a light source using an excitation wavelength of 351 nm and a power of 100 mW are used. All spectra were taken at room temperature by using a grating spectrometer and a photomultiplier detector. ZnO exhibited PL bands centered around 390, 510 and 640 nm, labeled near ultra-violet (UV), green and orange bands. Structural properties of ZnO thin films are analized with X-ray diffraction (XRD).

• Laser Solutions
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• v.8 no.2
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• pp.7-12
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• 2005

The material processing of UV nanosecond pulse laser cannot be avoided the material shape change and contamination caused by interaction of base material and laser beam. Nowadays, ultra short pulse laser shorter than nanosecond pulse duration is used to overcome this problem. The advantages of this laser are no heat transfer, no splashing material, no left material to the adjacent material. Because of these characteristics, it is so suitable for micro material processing. The processing of sapphire wafer was done by UV 355nm, green 532nm, IR 1064nm. X-Y motorized stage is installed to investigate the proper laser beam irradiation speed and cycles. Also, laser beam fluence and peak power are calculated.

• Bulletin of the Korean Chemical Society
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• v.17 no.7
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• pp.607-612
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• 1996

A series of new NLO-active poly(4-nitrophenylallylamine) derivatives was synthesized by the nucleophilic substitution reaction of several substituted 4-nitrohalobenzenes and poly(allylamine hydrochloride). All polymers obtained were amorphous and their glass transition temperatures (Tg) were observed around 148-160 ℃. For each of these polymers, their specific Tg values were dependent on characteristic electronic structures. UV-visible absorption spectra showed maximum absorption intensity at 355-393 nm for π-π* transition of alkylaminonitrophenyl groups. The χ(2)value of poly(4-nitrophenylallylamine), as determined by the second harmonic generation at 1064 nm, for a thin polymer film poled at an elevated temperature, was 1.4x10-8esu. The third-order NLO properties of poly(4-nitrophenylallylamine) derivatives were evaluated through measurement of degenerate four-wave mixing technique and χ(3) coefficient in the range of 2.7~3.2x10-12 esu at 602 nm was found with 400 fs laser pulses.

• Journal of the Optical Society of Korea
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• v.13 no.1
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• pp.65-74
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• 2009

Device quality indium tin oxide (ITO) films are deposited on glass substrates and ultra-thin diamond-like carbon films are deposited as a buffer layer on ITO by a pulsed Nd:YAG laser at 355 nm and 532 nm wavelength. ITO films deposited at room temperature are largely amorphous although their optical transmittances in the visible range are > 90%. The resistivity of their amorphous ITO films is too high to enable an efficient organic light-emitting device (OLED), in contrast to that deposited by a KrF laser. Substrate heating at $200^{\circ}C$ with laser wavelength of 355 nm, the ITO film resistivity decreases by almost an order of magnitude to $2{\times}10^{-4}\;{\Omega}\;cm$ while its optical transmittance is maintained at > 90%. The thermally induced crystallization of ITO has a preferred <111> directional orientation texture which largely accounts for the lowering of film resistivity. The background gas and deposition distance, that between the ITO target and the glass substrate, influence the thin-film microstructures. The optical and electrical properties are compared to published results using other nanosecond lasers and other fluence, as well as the use of ultra fast lasers. Molecularly doped, single-layer OLEDs of ITO/(PVK+TPD+$Alq_3$)/Al which are fabricated using pulsed-laser deposited ITO samples are compared to those fabricated using the commercial ITO. Effects such as surface texture and roughness of ITO and the insertion of DLC as a buffer layer into ITO/DLC/(PVK+TPD+$Alq_3$)/Al devices are investigated. The effects of DLC-on-ITO on OLED improvement such as better turn-on voltage and brightness are explained by a possible reduction of energy barrier to the hole injection from ITO into the light-emitting layer.

• Journal of Sensor Science and Technology
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• v.11 no.6
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• pp.319-326
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• 2002

$SrCl_2:Eu^{2+}$ phosphors were prepared by the solid phase reaction method, and their photostimulated luminescence(PSL) and photoluminescence(PL) characteristics were investigated. The PSL and PL peak of the $SrCl_2:Eu^{2+}$ phosphors are due to the $5d{\rightarrow}4f$ transition of $Eu^{2+}$ ions in phosphors. The PSL and PL spectrum obtained by the 355nm excitation was observed in $380{\sim}440\;nm$ region with the peak at 407 nm. The dose response of the PSL phosphors were linear within $2.5\;mGy{\sim}200\;mGy$ of 100 kV X-ray. The fading of the phosphors at room temperature was approximately 60% after 20 min.