• Transactions of the Korean Society of Machine Tool Engineers
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• v.17 no.2
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• pp.1-6
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• 2008

In recent years, developments in the semiconductor and electronic industries have brought a rapid increase in the use of large size silicon wafer. For further improvement of the ultra precision surface and flatness of Si wafer necessary to high density ULSI, it is known that polishing is very important. However, most of these investigation was experiment less than 300mm diameter. Polishing is one of the important methods in manufacturing of Si wafers and in thinning of completed device wafers. This study reports the machining variables that has major influence on the characteristic of wafer polishing. It was adapted to polishing pressure, machining speed, and the slurry mix ratio, the optimum condition is selected by ultra precision wafer polishing using load cell and infrared temperature sensor. The optimum machining condition is selected a result data that use a pressure and table speed data. By using optimum condition, it achieves a ultra precision mirror like surface.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.22 no.2
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• pp.310-317
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• 2013

In this paper, the contact pressure of the wafer and polishing pad for final polishing process for 300 mm-wafer were investigated through numerical analysis using FEM tool, ANSYS. The distribution of the contact pressure is one of main parameters which affects on the flatness and surface roughness of polished wafers. Two types of polishing head, a hard type head with ceramic disk and a soft type head with air bag were considered. The effects of the deformation and initial shape of table on the contact pressure were also examined. Both heads and tables were modeled as 3D finite element model from solid model, and the material properties of polishing pads and rubber plate for the air-bag head were obtained from tensile tests. The contact pressure deviation on wafer surface was smaller with air bag head than hard type head even when the table had form errors such as convex or concave. From this 3D analysis, it could be concluded that the air-bag head has better uniformity of the contact pressure on wafer. Also, the effects of inner diameter of air bag and radial clearance between wafer and retainer were investigated as view point of contact pressure concentration on the edge of wafer.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.11 no.6
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• pp.48-54
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• 2012

In recent years, developments in the semiconductor and electronic industries have brought a rapid increase in the use of large size silicon. However, for many companies, it is hard to produce 400mm or 450mm wafers, because of excesive funds for exchange the equipments. Therefore, it is necessary to investigate 300mm wafer to obtain a better efficiency and a good property rate. Polishing is one of the important methods in manufacturing of Si wafers and in thinning of completed device wafers. This research investigated the surface characteristics that apply variable machining conditions and Taguchi Method was used to obtain more flexible and optimal condition. In this study, the machining conditions have head speed, oscillation speed and polishing time. By using optimum condition, it achieves a ultra precision mirror like surface.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2007.06a
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• pp.747-748
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• 2007

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2007.06a
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• pp.751-752
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• 2007

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.1
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• pp.13-16
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• 2000

Progress in Si crystal and wafer technologies is discussed on single crystal growth, wafer fabrication, epitaxial growth, gettering, 300 mm and SOI. As for bulk crystal growth, the mechanism of grown-in defects (voids) formation, the succes of grown-in defect free crystal growth technology and nitrogen doped crystal are shown. New wafer fabrication technologies such as both-side mirror polishing and etchingless process have been developed. The epitaxial growth of SiGe/Si heterostructure for high speed bipolar device is treated. Gettering technology under low temperature process such as RTP is important, and also it is shown that IG effect for Ni could be predicted using computer simulation of precipitate density and size. The development of 300 mm wafer and SOI has made progress steadily.

• Journal of Korean Society for Quality Management
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• v.45 no.2
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• pp.293-306
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• 2017

Purpose: In this study, an optimal design level of influencing factors on semiconductor polishing process was determined to minimize flexion of both sides on wafers. Methods: First, significant interactions are determined by the stepwise regression method. ANOVA analysis on SN ratio and mean of dependent variable are performed to draw mean adjustment factors. In addition, the optimal levels of mean adjustment factors are decided by comparing means of each level of mean adjustment factors. Results: As a result of ANOVA, a mean adjustment factor was determined as a width of formed flexion on the plate. The mean of the difference has the nearest to 0 in the case when the width of formed flexion has level 2 (4mm). Conclusion: Optimal design levels of semiconductor polishing process are determined as follows; (i) load applied to the wafer carrier has a level 1 (3psi), (ii) load applied to the wafer has a level 1(3psi), (iii) the amount of slurry supplied during polishing has a level 3 (300 co/min), (iv) the width of formed flexion on the plate has level 2 (4mm).

• Transactions on Electrical and Electronic Materials
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• v.12 no.2
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• pp.56-59
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• 2011

The characterization of the chemical mechanical polishing (CMP) process for undensified phophosilicate glass (PSG) film is reported using design of experiments (DOE). DOE has been used by experimenters to understand the relationship between the input variables and responses of interest in a simple and efficient way, and it typically is beneficial for determining the appropriatesize of experiments with multiple process variables and making statistical inferences for the responses of interest. The equipment controllable parameters used to operate the machine consist of the down force of the wafer carrier, pressure on the back side wafer, table and spindle speeds (SS), slurry flow (SF) rate, pad condition, etc. None of these are independent ofeach other and, thus, the interaction between the parameters also needs to be understoodfor improved process characterization in CMP. In this study, we selected the five controllable equipment parameters the most recommendedby process engineers, viz. the down force (DF), back pressure (BP), table speed (TS), SS, and SF, for the characterization of the CMP process with respect to the material removal rate and film uniformity in percentage terms. The polished material is undensified PSG which is widely used for the plananization of multi-layered metal interconnects. By statistical modeling and the analysis of the metrology data acquired from a series of $2^{5-1}$ fractional factorial designs with two center points, we showed that the DF, BP and TS have the greatest effect on both the removal rate and film uniformity, as expected. It is revealed that the film uniformity of the polished PSG film contains two and three-way interactions. Therefore, one can easily infer that process control based on a better understanding of the process is the key to success in current semiconductor manufacturing, in which the size of the wafer is approaching 300 mm and is scheduled to continuously increase up to 450 mm in or slightly after 2012.

• Transactions on Electrical and Electronic Materials
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• v.12 no.3
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• pp.115-118
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• 2011

Process characterization of the chemical mechanical polishing (CMP) process for undensified phosphosilicate glass (PSG) film is reported using design of experiments (DOE). DOE has been addressed to experimenters to understand the relationship between input variables and responses of interest in a simple and efficient way. It is typically beneficial for determining the adequate size of experiments with multiple process variables and making statistical inferences for the responses of interests. Equipment controllable parameters to operate the machine include the down force (DF) of the wafer carrier, pressure on the backside of the wafer, table and spindle speed (SS), slurry flow rate, and pad condition. None of them is independent; thus, the interaction between parameters also needs to be indicated to improve process characterization in CMP. In this paper, we have selected the five controllable equipment parameters, such as DF, back pressure (BP), table speed (TS), SS, and slurry flow (SF), most process engineers recommend to characterize the CMP process with respect to material removal rate (RR) and film uniformity as a percentage. The polished material is undensified PSG. PSG is widely used for the plananization in multi-layered metal interconnects. We identify the main effect of DF, BP, and TS on both RR and film uniformity, as expected, by the statistical modeling and analysis on the metrology data acquired from a series of $2^{5-1}$ fractional factorial design with two center points. This revealed the film uniformity of the polished PSG film contains two and three-way interactions. Therefore, one can easily infer that the process control based on better understanding of the process is the key to success in semiconductor manufacturing, typically when the wafer size reaches 300 mm and is continuously scheduled to expand up to 450 mm in or little after 2012.

• Journal of the Microelectronics and Packaging Society
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• v.18 no.1
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• pp.15-21
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• 2011

In this study, flexural strength and fracture behavior of silicon die from single crystalline silicon wafer were investigated as a function of thickness. Silicon wafers with various thickness of 300, 200, 180, 160, 150, and 100 ${\mu}m$ were prepared by mechanical grinding and polishing of as-saw wafers. Flexural strength of 40 silicon dies (size: 62.5 mm${\times}$4 mm) from each wafer was measured by four point bending test, respectively. For statistical analysis of flexural strength, shape factor(i.e., Weibull modulus) and scale factor were determined from Weibull plot. Flexural strength reflecting both statistical fracture probability and size (thickness) effect of brittle silicon die was obtained as a linear function of die thickness. Fracture appearance was discussed in relation with measured fracture strength.