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http://dx.doi.org/10.6117/kmeps.2011.18.1.015

Evaluation of Flexural Strength of Silicon Die with Thickness by 4 Point Bending Test  

Min, Yoon-Ki (Department of Materials Science & Engineering, Seoul National University of Science & Technology)
Byeon, Jai-Won (Department of Materials Science & Engineering, Seoul National University of Science & Technology)
Publication Information
Journal of the Microelectronics and Packaging Society / v.18, no.1, 2011 , pp. 15-21 More about this Journal
Abstract
In this study, flexural strength and fracture behavior of silicon die from single crystalline silicon wafer were investigated as a function of thickness. Silicon wafers with various thickness of 300, 200, 180, 160, 150, and 100 ${\mu}m$ were prepared by mechanical grinding and polishing of as-saw wafers. Flexural strength of 40 silicon dies (size: 62.5 mm${\times}$4 mm) from each wafer was measured by four point bending test, respectively. For statistical analysis of flexural strength, shape factor(i.e., Weibull modulus) and scale factor were determined from Weibull plot. Flexural strength reflecting both statistical fracture probability and size (thickness) effect of brittle silicon die was obtained as a linear function of die thickness. Fracture appearance was discussed in relation with measured fracture strength.
Keywords
silicon die; die thickness; flexural strength; four point bending test; Weibull plot;
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Times Cited By KSCI : 2  (Citation Analysis)
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