• Journal of the Microelectronics and Packaging Society
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• v.15 no.1
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• pp.39-44
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• 2008

In this paper, fully embedded 2.4GHz WLAN band pass filter (BPF) was investigated into a multi-layered organic packaging substrate using high Q spiral stacked inductors and high Dk MIM capacitors for low cost RF System on Package (SOP) applications. The proposed 2.4GHz WLAN BPF was designed by modifying chebyshev second order filter circuit topology. It was comprised of two parallel LC resonators for obtaining two transmission zeros. It was designed by using 2D circuit and 3D EM simulators for finding out optimal geometries and verifying their applicability. It exhibited an insertion loss of max -1.7dB and return loss of min -l7dB. The two transmission zeros were observed at 1.85 and 6.7GHz, respectively. In the low frequency band of $1.8GHz{\sim}1.9GHz$, the stop band suppression of min -23dB was achieved. In the high frequency band of $4.1GHz{\sim}5.4GHz$, the stop band suppression of min -l8dB was obtained. It was the first embedded and the smallest one of the filters formed into the organic packaging substrate. It has a size of $2.2{\times}1.8{\times}0.77mm^3$.

• Journal of IKEEE
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• v.17 no.3
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• pp.385-392
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• 2013

In this paper, microstrip antenna to enhance the isolation between transmitting port and receiving port under the proximity objects is proposed, and applied to the Doppler radar sensor working at 5.8GHz ISM band which detects vital signals of a human body. Two 3dB quadrature hybrids are placed around radiation patch to form a balanced structure between transmitting port and receiving port, such that it consistently provides enhanced Tx/Rx isolation and excellent return loss over nearby objects. It is theoretically analyzed and simulated to verify the validity of the proposed application. The fabricated antenna that is 2mm away from the human body, has more than 16 dB return loss and at least 30dB isolation over ISM frequency band of 5.8GHz.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.22 no.8
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• pp.52-58
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• 2008

Ths paper describes the Dual-band switch which was proposed new structure that could improved the specification of broadband and designed by the optimized structure through simulation. The Dual-band switch with 2.4[GHz]/5.8[GHz] that can apply to 802.11a/b/g system that is commercialized present was studied to get a new structure with higher power, high isolation. The transmitter of switch was designed to operate a parallel switching element with stack structure of two FET. The receiver designed to have asymmetry structure that insert series FET in addition to basic serial/parallel FET. SPDT(Single Pole Double Throw) Tx/Rx FET switch is a device that can do switching from a port of input to two port of output. The fabricated SPDT switch has the characteristic of insertion loss of a below -3[dB] form DC to 6[GHz] and the isolation of a below -30D[dB](Rx mode).

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.5
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• pp.1-10
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• 1999

A low power concumption 2.4 GHz one-chip transceiver MMIC was designed and fabricated using $1.0\mu\textrm{m}$ ion-implantation MESFET process and packaged on a 24 lead SSOP. In the transmitter mode, it revealed conversion gain of 7.5 dB, output IP3 of -3.5 dBm, and noise figure of 3.9 dB at 2.44 GHz with 3.9 mA current consumption. In the receiver mode, it revealed voltage sensitivity of 6.5 mV/$\mu\$W with 2 .0 mA current consumption. Comparing the fabricated MMIC with the results of MMICs reported elsewhere, it was shown that the fabricated MMIC had good performance. The low power consumption 2.4 GHz transceiver MMIC is expected to be used for various applications such as wireless local area networks, wireless local loops and RFID tags in ISM-band.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.10 no.6
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• pp.71-76
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• 2010

In this paper, a 120 GHz local oscillator(LO) for the sub-harmonic mixer in the THz transceiver with a carrier frequency of 240 GHz was designed and fabricated. A 120 GHz local oscillator was composed of 40 GHz PLL(Phase Locked Loop), 40 GHz BPF(Band Pass Filter), frequency tripler and 120 GHz BPF. The commercial model of the frequency tripler was used. The measured result of the 40 GHz PLL showed the phase noise of -105 dBc/Hz at the 100 kHz offset frequency. The measured result of 120 GHz BPF showed the insertion loss of 1.3 dB at center frequency of 119 GHz with bandwidth of 5 GHz. The output power of 120 GHz LO was measured to 6.6 dBm.

• The Journal of the Korea institute of electronic communication sciences
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• v.11 no.9
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• pp.841-848
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• 2016

In this paper, a microstrip-fed dual-band monopole antenna with DGS(: Defected Ground System) for WLAN(: Wireless Local Area Networks) applications was designed, fabricated and measured. The proposed antenna is based on a microstrip-fed structure, and composed of two strip lines and DGS structure and then designed in order to get dual band characteristics. We used the simulator, Ansoft's High Frequency Structure Simulator(: HFSS) and carried out simulation about parameters W2, L10, W3, and DGS to get the optimized parameters. The proposed antenna is made of $21.0{\times}36.0{\times}1.6mm3$ and is fabricated on the permittivity 4.4 FR-4 substrate. The experiment results are shown that the proposed antenna obtained the -10 dB impedance bandwidth 700 MHz(2.10~2.80 GHz) and 1,780 MHz(5.02~6.80 GHz) covering the WLAN bands. Also, the measured gain and radiation patterns characteristics of the proposed antenna are presented at required dual-band(2.4GHz band/5.0GHz band), respectively.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.13 no.5
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• pp.459-467
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• 2002

A compact, lightweight and low-cost Planar Inverted-F Antenna(PIFA) for wireless LAN communication in the 5 GHz band is designed. The antenna is designed using the IE3D, the simulation tool of the Zeland Inc.. The characteristics of the implemented antenna are measured and analyzed. The antenna is resonated at the 5.25 GHz and its bandwidth is about 580 MHz under the condition of VSWR$\leq$1.5.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.12
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• pp.41-46
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• 2008

We report a high gain D-band(110 - 140 GHz) MMIC drive amplifier based on $0.1{\mu}m$ InGaAs/InAlAs/GaAs metamorphic HEMT technology. The amplifier shows an excellent $S_{21}$ gain characteristic greater than 10 dB in a millimeterwave frequency of 110 GHz, Also the amplifier has good reflection characteristics of a $S_{11}$ of -3.5 dB and a $S_{22}$ of -6.5 dB at 110 GHz, respectively The high performances of the MMIC drive amplifier is mainly attributed to the characteristics of the MHEMTs exhibiting a maximum transconductance of 760 mS/mm, a current gain cut-off frequency of 195 GHz and a maximum oscillation frequency of 391 GHz.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.13 no.4
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• pp.636-644
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• 2009

This paper presents a compact, low insertion loss, sharp rejection and wide band microstrip band pass filter that is composed rectangular loop resonator and step-impedance-open-stub(SIOS) for wireless data communication. The SIOS can be reduce length about 30% more than general $0.25{\lambda}$ stub. And the stub can the advantage of tuning impedance magnitude. In order to demonstrate agrement of this paper prove, the optimized wide band pass filters are realized and experimented. A transmission line model used to calculate the frequency response of the new filters shows good agreement with measurements. The filter has 3dB fractional bandwith of 52.5%(3.267GHz), an insertion loss of better than 0.33dB from 4.587GHz to 7.854GHz, and two rejection of greater than 30dB within 221MHz$(4.366GHz{\sim}4.587GHz)$ at low frequency band, 181MHz$(7.854GHz{\sim}8.035GHz)$ at high frequency band. Maximum rejection characteristics of the filter are -54dB at low frequency and -60dB at high frequency.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.11
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• pp.21-27
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• 2004

In this paper, millimeter-wave monolithic integrated circuit(MIMIC) low noise amplifier(LNA) for V-band, which is applicable to 60 GHz wireless local area network(WLAN), was fabricated using the high performance 0.1 ${\mu}{\textrm}{m}$ $\Gamma$-gate pseudomorphic high electron mobility transistor(PHEMT). The DC characteristics of PHEMT are drain saturation current density(Idss) of 450 mA/mm and maximum transconductance(gm, max) of 363.6 mS/mm. The RF characteristics were obtained the current gain cut-off frequency(fT) of 113 GHz and the maximum oscillation frequency(fmax) of 180 GHz. V-band MIMIC LNA was designed using active and passive device library, which is composed of 0.1 ${\mu}{\textrm}{m}$ $\Gamma$-gate PHEMT and coplanar waveguide(CPW) technology. The designed V-band MIMIC LNA was fabricated using integrated unit processes of active and passive device. The measured results of V-band MIMIC LNA are shown S21 gain of 21.3 dB, S11 of -10.6 dB at 60 GHz and S22 of -29.7 dB at 62.5 GHz. The measured result of V-band MIMIC LNA was shown noise figure (NF) of 4.23 dB at 60 GHz.