• 제목/요약/키워드: 3-D device simulations

검색결과 47건 처리시간 0.023초

3 차원 유체역학 집속에 대한 채널 형상 및 유동 조건의 매개변수 연구 (Effects of Geometric and Flow Conditions on 3-dimensional Hydrodynamic Focusing)

  • 한경섭;김동성
    • 대한기계학회논문집B
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    • 제34권1호
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    • pp.61-66
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    • 2010
  • 최근 본 연구그룹은 국소적인 종횡비 증가를 기반으로 수평 분리벽 없이 검체의 3 차원 집속을 구현하는 3 차원 유체역학 집속 미세유체 장치(3D-HFMD)를 제안한 바 있다. 본 논문에서는, 다양한 형상 및 유동 조건에 따른 3D-HFMD 의 3 차원 유체역학 집속 거동 영향에 대한 연구를 수행하였다. 이에 3 차원 전산유체역학(CFD) 시뮬레이션을 통해, 형상 및 유동 조건 변화에 대한 기존의 미세유체 장치와 본 연구 그룹이 제안한 3D-HFMD의 3 차원 유체역학 집속의 매개변수 연구를 수행하였다. 수행된 CFD 시뮬레이션 결과를 바탕으로 3 차원 집속을 위한 채널 형상 디자인 및 유동 조건을 제안하였다.

Impact of Fin Aspect Ratio on Short-Channel Control and Drivability of Multiple-Gate SOI MOSFET's

  • Omura, Yasuhisa;Konishi, Hideki;Yoshimoto, Kazuhisa
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제8권4호
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    • pp.302-310
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    • 2008
  • This paper puts forward an advanced consideration on the design of scaled multiple-gate FET (MuGFET); the aspect ratio ($R_{h/w}$) of the fin height (h) to fin width (w) of MuGFET is considered with the aid of 3-D device simulations. Since any change in the aspect ratio must consider the trade-off between drivability and short-channel effects, it is shown that optimization of the aspect ratio is essential in designing MuGFET's. It is clearly seen that the triple-gate (TG) FET is superior to the conventional FinFET from the viewpoints of drivability and short-channel effects as was to be expected. It can be concluded that the guideline of w < L/3, where L is the channel length, is essential to suppress the short-channel effects of TG-FET.

저전압 VDMOS의 ON-저항 모델 (An Advanced Model of on-Resistance for Low Voltage VDMOS Devices)

  • 김일중;김성동;최연익;한민구
    • 대한전기학회논문지
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    • 제41권3호
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    • pp.267-273
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    • 1992
  • An advanced on-resistance model of VDMOS devices in the low voltage regimes is proposed and verified by 2-D device simulations. The model considers the lateral gaussian doping profiles in the channel region and exact current spreading angles in the epitaxial layer for both linear and cellular geometries by employing the conformal mapping, It is found out that the on-resistance of low voltage VDMOS may be overestimated considerably if it is analyzed by the conventional method. The 2-D device simulation results show that the proposed model is valid for the VDMOS devices in the low voltage regimes.

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셀룰러 네트워크상의 D2D 통신을 위한 공유릴레이 기반 간섭 관리 기법 (Shared Relay-Based Interference Management Schemes for Device-to-Device Radio Underlaying Cellular Networks)

  • 양모찬;오선애;신오순;신요안
    • 한국통신학회논문지
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    • 제38A권4호
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    • pp.371-380
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    • 2013
  • 셀룰러 인프라 구조에 기반하여 셀룰러 스펙트럼을 공유하여 사용하는 D2D (Device-to-Device) 통신은 몇 가지 장점이 있지만, 셀룰러 네트워크 사용자와 동일한 자원을 사용하므로 간섭이 생기는 큰 문제점이 있다. 특히, 다중 셀에서 셀 경계 D2D 사용자와 셀룰러 사용자 간의 간섭 문제는 셀의 중심부에서보다 훨씬 강도가 높게 발생한다. 따라서, 본 논문에서는 인접한 셀들의 중심에 위치한 SRN (Shared Relay Node)이 셀룰러 링크와 D2D 링크 사이에 발생하는 간섭을 효율적으로 관리하는 새로운 방식을 제안한다. 제안하는 SRN은 기존 Type II 릴레이와 같이 데이터 재전송 역할을 수행할 뿐만 아니라, 추가적으로 간섭 관리를 위한 기능을 수행하기 때문에 몇 가지 기능이 새롭게 정의된다. 셀룰러 링크와 D2D 링크 사이에 간섭 관리를 위한 구체적인 방법으로 본 논문에서는 셀 경계영역 사용자들의 간섭 회피를 위한 SRN 기반 자원할당 방법을 제안하고 이들의 성능을 모의실험을 통해 검증하였다.

Device modelling and performance analysis of two-dimensional AlSi3 ballistic nanotransistor

  • Chuan, M.W.;Wong, K.L.;Hamzah, A.;Rusli, S.;Alias, N.E.;Lim, C.S.;Tan, M.L.P.
    • Advances in nano research
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    • 제10권1호
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    • pp.91-99
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    • 2021
  • Silicene is an emerging two-dimensional (2D) semiconductor material which has been envisaged to be compatible with conventional silicon technology. This paper presents a theoretical study of uniformly doped silicene with aluminium (AlSi3) Field-Effect Transistor (FET) along with the benchmark of device performance metrics with other 2D materials. The simulations are carried out by employing nearest neighbour tight-binding approach and top-of-the-barrier ballistic nanotransistor model. Further investigations on the effects of the operating temperature and oxide thickness to the device performance metrics of AlSi3 FET are also discussed. The simulation results demonstrate that the proposed AlSi3 FET can achieve on-to-off current ratio up to the order of seven and subthreshold swing of 67.6 mV/dec within the ballistic performance limit at room temperature. The simulation results of AlSi3 FET are benchmarked with FETs based on other competitive 2D materials such as silicene, graphene, phosphorene and molybdenum disulphide.

전기히터의 설계 변수에 따른 순간온수기 열유동 특성 해석 (Analysis of heat and fluid flows in an instant water heater according to design parameters of an electric heat device)

  • 쑨휘;김준현;성재용
    • 한국가시화정보학회지
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    • 제21권3호
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    • pp.23-32
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    • 2023
  • This study aims to explore the heat transfer and flow phenomena inside an instant water heater and the influence of the design parameters of the water heater on the heating performance was investigated by 3-D numerical simulations considering heat convection. The design parameters are the heating ceramic dimension, the power of the heating device, and the water flow rate. The results show that a reasonable space for the heating device is required to optimize the heating performance. It is desirable to design higher heating device as possible for a given electric power. There exists a critical water flow rate that best meets the heating performance. The change in electric power has no impact on the flow phenomena and heating performance.

코일 내경 통합 적용형 PAY OFF REEL 개발 (Development on integrated Pay Off Reel for Varied Diameter of Coil Inner)

  • 박정호;박현진;이대희;김순경
    • 한국기계가공학회지
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    • 제9권1호
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    • pp.61-66
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    • 2010
  • Pay off reel is the device to release in the form of coil. Every time the device becomes a hassle to exchange, each diameter of two forms has been applied to the coil reel. There is the change of reel diameter of the sleeve portion to be the part of segment geometry. This unit is conducting on 3-dimensional modeling design. The basic strength and deformation of the device could be checked in advance by the basis of 3-d modeling data to perform simulations. The production of each part can be completed and assembled. Conducted for the final product which is tested and measured, all items are satisfied within the limits of targets. Due to the development of this device, the efficiency on operations can be increased and the production time becomes shortened.

초음파 센서를 이용한 모션 인식 차량 통합 제어 장치의 제작 및 실험 (Fabrication and Experiment of Ultrasonic Sensor Integrated Motion Recognition Device for Vehicle Manipulation)

  • 나영민;박종규;이현석;강태훈
    • 센서학회지
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    • 제24권3호
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    • pp.175-180
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    • 2015
  • Worldwide, studies on intelligent vehicles for the convenience of drivers have been actively conducted as the number of cars has increased. However, vehicle convenience enabled by buttons lowers the concentration on driving and hence poses as a huge threat to the safety of the driver. The use of one of the convenient features, impaired driving auxiliary equipment, is limited because of its complex usage, and this device also hinders the front view of the driver. This paper proposes a vehicle-control device for controlling the convenient features as well as changes in speed and direction using gestures and motions of the driver. This device consists of an ultrasonic sensor for recognizing movement, an arduino for accepting signal control functions and servo and DC motors apply to various vehicle parts. Firstly, the vehicle-control device was designed using a 3D CAD program known as Solid-works based on the size of the steering wheel. Then, through simulations, a suitable length for minimizing the absorbent between ultrasonic sensors was confirmed using a program known as COMSOL Multiphysics. Finally, simulation results were verified through experiments, and the optimal size of the device was identified through the number of errors.

이기종 네트워크에서 클러스터 코디네이터 노드 기반의 셀간 간섭 관리 방법 (Cluster Coordinator Node Based Inter-Cell Interference Management Methods in Heterogeneous Networks)

  • 양모찬;오선애;신오순;신요안
    • 한국통신학회논문지
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    • 제38A권3호
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    • pp.277-288
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    • 2013
  • 차세대 이동통신 시스템 규격으로서 3GPP LTE-Advanced (Third Generation Partnership Project Long Term Evolution-Advanced)는 급격하게 증가하는 무선 데이터 트래픽 요구를 해결하기 위해 펨토 셀 혹은 피코 셀과 같은 소형 기지국 및 단말과 단말 사이에 근거리 통신을 수행하는 D2D (Device-to-Device) 통신 방식을 도입하였다. 대형 기지국인 매크로 셀과 소형 기지국인 펨토 셀과 피코 셀 그리고 D2D 통신이 한 개의 셀 내에 혼재하면서 생기는 다양한 간섭 상황이 정리되었으며, 이를 해결하기 위해서 다양한 주제 범위에서 연구가 되었다. 따라서 본 논문에서는 이러한 HetNet (Heterogeneous Network)에서 매크로 셀과 타 기종 네트워크 사이의 간섭을 관리하고 주파수 효율성을 높일 수 있는 간섭회피 방법을 제시한다. 본 논문에서 고려하는 CCN (Cluster Coordinator Node)의 도움을 받는 셀간 간섭회피 방법은 하나의 MeNB (Macro enhanced Node-B)와 다수 소형 셀들이 공존하는 HetNet 환경에서 다수 소형 셀들을 하나의 CCN이 관리하는 구조를 고려한다. HetNet에서 셀간 간섭관리를 위한 구체적인 방법으로 본 논문에서는 CCN 영역 내에 사용자들의 간섭회피를 위한 자원할당 방법을 제안하고, 이들 성능을 시스템 레벨 모의시험을 통해 검증하였다.

플래시메모리소자의 구조에 대한 열적 데이터 삭제 효율성 비교 (Comparison of Efficiency of Flash Memory Device Structure in Electro-Thermal Erasing Configuration)

  • 김유정;이승은;이광선;박준영
    • 한국전기전자재료학회논문지
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    • 제35권5호
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    • pp.452-458
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    • 2022
  • The electro-thermal erasing (ETE) configuration utilizes Joule heating intentionally generated at word-line (WL). The elevated temperature by heat physically removes stored electrons permanently within a very short time. Though the ETE configuration is a promising next generation NAND flash memory candidate, a consideration of power efficiency and erasing speed with respect to device structure and its scaling has not yet been demonstrated. In this context, based on 3-dimensional (3-D) thermal simulations, this paper discusses the impact of device structure and scaling on ETE efficiency. The results are used to produce guidelines for ETEs that will have lower power consumption and faster speed.