• Transactions of the Korean Society of Mechanical Engineers B
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• v.34 no.1
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• pp.61-66
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• 2010

In our previous work, 3-dimensional hydrodynamic focusing microfluidic device (3D-HFMD) has been developed with the help of locally increased aspect ratio of thickness to width without any horizontal separation wall. In this study, we have investigated 3-dimensional hydrodynamic focusing behaviors inside the 3D-HFMD according to the various geometric and flow conditions. The parametric study has been extensively carried out for the effects of geometric and flow conditions on 3-dimensional hydrodynamic focusing with both 3D-HFMD and previous microfluidic device design based on three-dimensional computational fluid dynamics (CFD) simulations. The CFD simulations suggested the proper design window of channel geometry and flow conditions.

• JSTS:Journal of Semiconductor Technology and Science
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• v.8 no.4
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• pp.302-310
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• 2008

This paper puts forward an advanced consideration on the design of scaled multiple-gate FET (MuGFET); the aspect ratio ($R_{h/w}$) of the fin height (h) to fin width (w) of MuGFET is considered with the aid of 3-D device simulations. Since any change in the aspect ratio must consider the trade-off between drivability and short-channel effects, it is shown that optimization of the aspect ratio is essential in designing MuGFET's. It is clearly seen that the triple-gate (TG) FET is superior to the conventional FinFET from the viewpoints of drivability and short-channel effects as was to be expected. It can be concluded that the guideline of w < L/3, where L is the channel length, is essential to suppress the short-channel effects of TG-FET.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.41 no.3
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• pp.267-273
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• 1992

An advanced on-resistance model of VDMOS devices in the low voltage regimes is proposed and verified by 2-D device simulations. The model considers the lateral gaussian doping profiles in the channel region and exact current spreading angles in the epitaxial layer for both linear and cellular geometries by employing the conformal mapping, It is found out that the on-resistance of low voltage VDMOS may be overestimated considerably if it is analyzed by the conventional method. The 2-D device simulation results show that the proposed model is valid for the VDMOS devices in the low voltage regimes.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.38A no.4
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• pp.371-380
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• 2013

D2D (Device-to-Device) communication on an underlying cellular infrastructure which exploits the same spectrum has several advantages such as increased resource utilization and improved cellular coverage. However, D2D communication system needs to cope with ICI (Inter-Cell Interference) and interference between cellular and D2D links. As a result, macro UEs (User Equipments), especially those located near cell edge, will suffer from serious link performance degradation. We propose a novel interference avoidance mechanism assisted by SRN (Shared Relay Node) in this paper. SRN not only performs data re-transmission as a usual Type II relay but also has several features newly defined to avoid interference between cellular and D2D links. In particular, we suggest resource allocation methods based on the SRN for effective interference avoidance, and evaluate their performance through computer simulations.

• Advances in nano research
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• v.10 no.1
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• pp.91-99
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• 2021

Silicene is an emerging two-dimensional (2D) semiconductor material which has been envisaged to be compatible with conventional silicon technology. This paper presents a theoretical study of uniformly doped silicene with aluminium (AlSi3) Field-Effect Transistor (FET) along with the benchmark of device performance metrics with other 2D materials. The simulations are carried out by employing nearest neighbour tight-binding approach and top-of-the-barrier ballistic nanotransistor model. Further investigations on the effects of the operating temperature and oxide thickness to the device performance metrics of AlSi3 FET are also discussed. The simulation results demonstrate that the proposed AlSi3 FET can achieve on-to-off current ratio up to the order of seven and subthreshold swing of 67.6 mV/dec within the ballistic performance limit at room temperature. The simulation results of AlSi3 FET are benchmarked with FETs based on other competitive 2D materials such as silicene, graphene, phosphorene and molybdenum disulphide.

• Journal of the Korean Society of Visualization
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• v.21 no.3
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• pp.23-32
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• 2023

This study aims to explore the heat transfer and flow phenomena inside an instant water heater and the influence of the design parameters of the water heater on the heating performance was investigated by 3-D numerical simulations considering heat convection. The design parameters are the heating ceramic dimension, the power of the heating device, and the water flow rate. The results show that a reasonable space for the heating device is required to optimize the heating performance. It is desirable to design higher heating device as possible for a given electric power. There exists a critical water flow rate that best meets the heating performance. The change in electric power has no impact on the flow phenomena and heating performance.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.9 no.1
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• pp.61-66
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• 2010

Pay off reel is the device to release in the form of coil. Every time the device becomes a hassle to exchange, each diameter of two forms has been applied to the coil reel. There is the change of reel diameter of the sleeve portion to be the part of segment geometry. This unit is conducting on 3-dimensional modeling design. The basic strength and deformation of the device could be checked in advance by the basis of 3-d modeling data to perform simulations. The production of each part can be completed and assembled. Conducted for the final product which is tested and measured, all items are satisfied within the limits of targets. Due to the development of this device, the efficiency on operations can be increased and the production time becomes shortened.

• Journal of Sensor Science and Technology
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• v.24 no.3
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• pp.175-180
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• 2015

Worldwide, studies on intelligent vehicles for the convenience of drivers have been actively conducted as the number of cars has increased. However, vehicle convenience enabled by buttons lowers the concentration on driving and hence poses as a huge threat to the safety of the driver. The use of one of the convenient features, impaired driving auxiliary equipment, is limited because of its complex usage, and this device also hinders the front view of the driver. This paper proposes a vehicle-control device for controlling the convenient features as well as changes in speed and direction using gestures and motions of the driver. This device consists of an ultrasonic sensor for recognizing movement, an arduino for accepting signal control functions and servo and DC motors apply to various vehicle parts. Firstly, the vehicle-control device was designed using a 3D CAD program known as Solid-works based on the size of the steering wheel. Then, through simulations, a suitable length for minimizing the absorbent between ultrasonic sensors was confirmed using a program known as COMSOL Multiphysics. Finally, simulation results were verified through experiments, and the optimal size of the device was identified through the number of errors.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.38A no.3
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• pp.277-288
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• 2013

3GPP LTE-Advanced (Third Generation Partnership Project Long Term Evolution-Advanced) as a next generation mobile communication standard introduced small base stations such as femto cells or pico cells, and D2D (Device-to-Device) communications between mobiles in the proximity in order to satisfy the needs of rapidly growing wireless data traffic. A diverse range of topics has been studied to solve various interference situations which may occur within a single cell. In particular, an introduction of a small base station along with D2D communication raises important issues of how to increase the channel capacity and frequency efficiency in HetNets (Heterogeneous Networks). To this end, we propose in this paper methods to manage the interference between the macro cell and other small cells in the HetNet to improve the frequency efficiency. The proposed CCN (Cluster Coordinator Node)-assisted ICI (Inter-Cell Interference) avoidance methods exploit the CCN to control the interference in HetNet comprising of an MeNB (Macro enhanced Node-B) and a large number of small cells. A CCN which is located at the center of a number of small cells serves to avoid the interference between macro cell and small cells. We propose methods of resource allocation to avoid ICI for user equipments within the CCN coverage, and evaluate their performance through system-level computer simulations.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.5
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• pp.452-458
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• 2022

The electro-thermal erasing (ETE) configuration utilizes Joule heating intentionally generated at word-line (WL). The elevated temperature by heat physically removes stored electrons permanently within a very short time. Though the ETE configuration is a promising next generation NAND flash memory candidate, a consideration of power efficiency and erasing speed with respect to device structure and its scaling has not yet been demonstrated. In this context, based on 3-dimensional (3-D) thermal simulations, this paper discusses the impact of device structure and scaling on ETE efficiency. The results are used to produce guidelines for ETEs that will have lower power consumption and faster speed.