• Title/Summary/Keyword: 3 D.O.F

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Eu3+ Luminescence in Two-Dimensional Sr2-2xEuxKxSnO4 with K2NiF4 Structure (2차원적 K2NiF4형 구조의 Sr2-2xEuxKxSnO4에서 Eu3+ 이온의 Luminescence)

  • Yo, Chul-Hyun;Minh Chau, P.T.;Ryu, Kwang-Hyun;Kim, Anh-T.
    • Journal of the Korean Chemical Society
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    • v.41 no.4
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    • pp.175-179
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    • 1997
  • Luminescence of $Eu^{3+}$ has been studied in $Sr_{2-2x}Eu_xK_xSnO_4$ with two-dimensional $K_2NiF_4$ structure. The $^5D_o$$^7F_o$$Eu^{3+}$ ion represents the J=0 → J=0 transition which is forbidden by a Judd-Ofelt selection rule for electric dipole transition in 4f shell of $Eu^{3+}$ ions. However, the emission line of $^5D_o$$^7F_o$$Eu^{3+}$ emission spectra of Sr2-2xEuxKxSnO4$Sr_{2-2x}Eu_xK_xSnO_4$structure around $Eu^{3+}$ ions.

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Immune Effect of Newcastle Disease Virus DNA Vaccine with C3d as a Molecular Adjuvant

  • Zhao, Kai;Duan, Xutong;Hao, Lianwei;Wang, Xiaohua;Wang, Yunfeng
    • Journal of Microbiology and Biotechnology
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    • v.27 no.11
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    • pp.2060-2069
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    • 2017
  • Newcastle disease is a serious infectious disease in the poultry industry. The commercial vaccines can only offer limited protection and some of them are expensive and need adjuvants. At present, DNA vaccines are widely used. However, the immune responses induced by DNA vaccines are too slow and low. Here, we constructed the transfer vectors with a different number of C3d as molecular adjuvants (n = 1, 2, 4, or 6), and the vectors were cloned into the optimal eukaryotic expression plasmid (pVAXI-optiF) that expressed the F gene of Newcastle disease virus (NDV), and named pVAXI-F(o)-C3d1, pVAXI -F(o)-C3d2, pVAXI-F(o)-C3d4, and pVAXI-F(o)-C3d6, respectively. Cell transfection test indicated that pVAXI-F(o)-C3d6 showed the highest expression. In vivo immunization showed that the chickens immunized with pVAXI-F(o)-C3d6 intramuscularly induced better immune responses than the chickens immunized with the other plasmids. The protective efficacy of pVAXI-F(o)-C3d6 was 80% after challenge with the highly virulent NDV strain F48E9. The results in this study showed that C3d6 could be used as a molecular adjuvant to quickly induce an effective immune response to control NDV.

Design and Control of 3 D.O.F. Spherical Actuator Using the Magnetic Force of the Electromagnets (전자석의 자기력 제어를 이용한 구형 3 자유도 액추에이터의 설계 및 제어)

  • Baek, Yun-Su;Yang, Chang-Il;Park, Jun-Hyeok
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.25 no.9
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    • pp.1341-1349
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    • 2001
  • In this paper, 3 D.O.F. actuator, which has three degrees of freedom in one joint, is proposed. The proposed 3 D.O.F. spherical actuator is composed of the rotor and atator. The upper plate of the stator supports the rotor and five electromagnets are located at the base of the stator. The rotor has two permanent magnets, and each rotational axis of the rotor gimbal system is supported by the bearing. To find out the governing equations for the torque generation, Coulombs law and Lorentz force with respect to magnetism is applied. As the experimental results, if the distance between electromagnet and permanent maget is far enough, the force between these magnets can be expressed from current of coils and z-axial distance. For the purpose of control 3 D.O.F. actuator, PID control law is applied. The experimental results are presented to show the validity of the proposed 3 D.O.F. actuator.

Improvement of Current Path by Using Ferroelectric Material in 3D NAND Flash Memory (3D NAND Flash Memory에 Ferroelectric Material을 사용한 Current Path 개선)

  • Jihwan Lee;Jaewoo Lee;Myounggon Kang
    • Journal of IKEEE
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    • v.27 no.4
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    • pp.399-404
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    • 2023
  • In this paper, we analyzed the current path in the O/N/O (Oxide/Nitride/Oxide) structure of 3D NAND Flash memory and in the O/N/F (Oxide/Nitride/Ferroelectric) structure where the blocking oxide is replaced by a ferroelectric. In the O/N/O structure, when Vread is applied, a current path is formed on the backside of the channel due to the E-fields of neighboring cells. In contrast, the O/N/F structure exhibits a current path formed on the front side due to the polarization of the ferroelectric material, causing electrons to move toward the channel front. Additionally, we performed an examination of device characteristics considering channel thickness and channel length. The analysis results showed that the front electron current density in the O/N/F structure increased by 2.8 times compared to the O/N/O structure, and the front electron current density ratio of the O/N/F structure was 17.7% higher. Therefore, the front current path is formed more effectively in the O/N/F structure than in the O/N/O structure.

Dynamic Analysis and Control of the 3 Degrees of Freedom Motor (3자유도 모터의 동역학적 해석 및 제어)

  • 강규원
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 1996.04a
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    • pp.341-345
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    • 1996
  • Many mechanical and electrocal systems use the number of motors to make multi degree of freedom motion. One method to reduce the number of motors is suggested by using the 3 D.O.F. motor. The 3 D.O.F. motor has advantages such as downsize, weight reduction, and simplification of the existing 3 D.O.F. systems. In this study, a mathematical model for the 3 D.O.F. motor is suggested and the dynamic equation is derived to analyze the 3 D.O.F. motion. Generallinear control methods are very hard to get the good performance because of the nonlinear terms of each degree of each degree of freedom. To control the motion properly, the nonlinear terms are decoupled using a feedback control law. Nonlinear feedback control law which can arrage the poles arbitrarily is derived. The effects of the gains are examined through computer simulations.

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The Analysis of Threshold Voltage Shift for Tapered O/N/O and O/N/F Structures in 3D NAND Flash Memory (3D NAND Flash Memory에서 Tapering된 O/N/O 및 O/N/F 구조의 Threshold Voltage 변화 분석)

  • Jihwan Lee;Jaewoo Lee;Myounggon Kang
    • Journal of IKEEE
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    • v.28 no.1
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    • pp.110-115
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    • 2024
  • This paper analyzed the Vth (Threshold Voltage) variations in 3D NAND Flash memory with tapered O/N/O (Oxide/Nitride/Oxide) structure and O/N/F (Oxide/Nitride/Ferroelectric) structure, where the blocking oxide is replaced by ferroelectric material. With a tapering angle of 0°, the O/N/F structure exhibits lower resistance compared to the O/N/O structure, resulting in reduced Vth variations in both the upper and lower regions of the WL (Word Line). Tapered 3D NAND Flash memory shows a decrease in channel area and an increase in channel resistance as it moves from the upper to the lower WL. Consequently, as the tapering angle increases, the Vth decreases in the upper WL and increases in the lower WL. The tapered O/N/F structure, influenced by Vfe proportional to the channel radius, leads to a greater reduction in Vth in the upper WL compared to the O/N/O structure. Additionally, the lower WL in the O/N/F structure experiences a greater increase in Vth compared to the O/N/O structure, resulting in larger Vth variations with increasing tapering angles.

Development of Three D.O.F. Alignment Stage for Vaccume Environment (진공용 3 자유도 얼라인먼트 스테이지 개발)

  • 박희재;박종호;한상진
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 2000.11a
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    • pp.551-554
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    • 2000
  • Alignment system is a system to locate an object to it's accurate position in multi-d.o.f space. According to process of application, it is need to align an object in 3 or 6 d.o.f. space. And alignment system is used in various environments. Especially in PDP application, alignment process is carried out in vaccume environment. In this paper, we developed 3 d.o.f. alignment system for vaccume environment, performed kinematic analysis and improved it's positional accuracy.

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Luminescence characterization of $EU^{3+}$ and $Bi^{3+}$ co-doped in ${Y_2}{SiO_5}$ red emitting phosphor by solid state reaction method (고상 반응법으로 합성한 ${Y_2}{SiO_5}:\;EU^{3+}$, $Bi^{3+}$ 적색 형광체의 발광 특성)

  • Moon, J.W.;Song, Y.H.;Park, W.J.;Yoon, D.H.
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.19 no.1
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    • pp.15-18
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    • 2009
  • To enhance near UV-visible absorption region and to applied phosphor convert-white LEOs (PC-WLEDs), a red phosphor composed of ${Y_2}{SiO_5}:\;EU^{3+}$, $Bi^{3+}$ compounds was prepared by the conventional solid-state reaction. The photoluminescence (PL) shown that samples were excited by near UV light 395 nm for measurement of PL spectra. Emission spectra of samples have shown red emissions at 612 nm ($^5D_0{\to}^7F_2$). The enhanced near $UV{\sim}$ visible excitation spectrum with a broad band centered at 258 nm and 282 nm originated in the transitions toward the charge transfer state (CTS) due to the $Eu^{3+}-Bi^{3+}-O^{2-}$ interaction. The other excitation band at $350\;nm{\sim}480\;nm$, corresponding to the transitions $^7F_0{\to}^5L_9$ (364 nm), $^7F_0{\to}^5G_3$ (381 nm), $^7F_0{\to}^5L_6$ (395 nm), $^7F_0{\to}^5D_3$, (415 nm) and $^7F_0{\to}^5D_2$ (466 nm), occurred due to enhanced the f-f transition increasing $Bi^{3+}$ and $Eu^{3+}$ ions. The PL intensity increased with increased as concentration of $Bi^{3+}$ and the emission intensity becomes with a maximum at 0.125 mol.

Pyroelectric Infrared Sensors using (Pb,La)TiO3/LiTaO3/(Pb,La)TiO3 Multilayer Ferroelectric Thin Films ((Pb,La)TiO3/LiTaO3/(Pb,La)TiO3 다층 강유전 박막을 이용한 초전형 적외선 센서)

  • Sung, Se-Kyoung;Lee, Du-Hyun;Choi, Hyek-Hwan;Lee, Myoung-Kyo;Kwon, Tae-Ha
    • Journal of Sensor Science and Technology
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    • v.11 no.4
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    • pp.247-253
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    • 2002
  • For fabrication of the pyroelectric IR sensor $(Pb,La)TiO_3(PLT)$/$LiTaO_3$/(LTO)/PLT ferroelectric thin films was deposited by rf magnetron sputtering followed by rapid thermal annealing and the crystallinity as a function of annealing temperature and time was investigated. Permittivity and dielectric loss factor of ferroelectric thin films as a function of c-axis preffered orientation was measured. Also pyroelectric coefficient of ferroelectric thin films with largest c-axis preffered orientation was measured and obtain figure of merit of voltage response($F_V$) and detectivity($F_D$). In this case $F_V$, $F_D$ was $5.63{\times}10^{-10}\;C{\cdot}cm/J$, $1.98{\times}10^{-8}\;C{\cdot}cm/J$, respectively.

Luminescence properties of a new $Tb^{3+}$ ion activated long persistent phosphor (새로운 $Tb^{3+}$ 이온 활성 축광성 형광체의 발광 특성)

  • Park, Byeong-Seok;Choi, Jong-Geon
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.19 no.3
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    • pp.130-134
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    • 2009
  • A new long persistent phosphors of $CaZrO_3$ was synthesized at high temperature with weak reduction atmosphere by a traditional solid state reaction method. Photoluminescence spectra analysis showed that the $CaZrO_3$ doped with $Tb^{3+}$ emitted green-yellow emission caused by the energy level transition from the $^5D_3$ and $^5D_4$ to $^7F_1{\sim}^7F_6$. The main emission spectra of 542 nm peak by the $^5D_4{\rightarrow}^7F_5$ transition was revealed through synthesizing at high temperature in $N_2$ gas atmosphere. The afterglow emission spectra of $CaZrO_3:Tb^{3+}$ long persistent phosphores arise at 546 nm peak of narrow range. After the 254 nm ultraviolet light excitation source was switched off, the green-yellow long persistent phosphor can be observed which could last for 8 h in the limit of light perception of dark-adapted human eyes ($0.32\;mcd/m^2$).