• 제목/요약/키워드: 3^{pulsed}$

검색결과 1,293건 처리시간 0.031초

Intermediate band solar cells with ZnTe:Cr thin films grown on p-Si substrate by pulsed laser deposition

  • Lee, Kyoung Su;Oh, Gyujin;Kim, Eun Kyu
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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    • pp.247.1-247.1
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    • 2016
  • Low-cost, high efficiency solar cells are tremendous interests for the realization of a renewable and clean energy source. ZnTe based solar cells have a possibility of high efficiency with formation of an intermediated energy band structure by impurity doping. In this work, ZnO/ZnTe:Cr and ZnO/i-ZnTe structures were fabricated by pulsed laser deposition (PLD) technique. A pulsed (10 Hz) Nd:YAG laser operating at a wavelength of 266 nm was used to produce a plasma plume from an ablated a ZnTe target, whose density of laser energy was 10 J/cm2. The base pressure of the chamber was kept at approximately $4{\times}10-7Torr$. ZnTe:Cr and i-ZnTe thin films with thickness of 210 nm were grown on p-Si substrate, respectively, and then ZnO thin films with thickness of 150 nm were grown on ZnTe:Cr layer under oxygen partial pressure of 3 mTorr. Growth temperature of all the films was set to $250^{\circ}C$. For fabricating ZnO/i-ZnTe and ZnO/ZnTe:Cr solar cells, indium metal and Ti/Au grid patterns were deposited on back and front side of the solar cells by using thermal evaporator, respectively. From the fabricated ZnO/ZnTe:Cr and ZnO/i-ZnTe solar cell, dark currents were measured by using Keithley 2600. Solar cell parameters were obtained under Air Mass 1.5 Global solar simulator with an irradiation intensity of 100 mW/cm2, and then the photoelectric conversion efficiency values of ZnO/ZnTe:Cr and ZnO/i-ZnTe solar cells were measured at 1.5 % and 0.3 %, respectively.

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Synthesis of scheelite-type nanocolloidal particles by pulsed laser ablation in liquid and their size distribution analysis

  • Lee, Jung-Il;Shim, Kwang Bo;Ryu, Jeong Ho
    • 한국결정성장학회지
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    • 제24권3호
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    • pp.111-119
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    • 2014
  • A novel pulsed laser ablation process in liquid was investigated to prepare scheelite-type ceramic [calcium tungstate ($CaWO_4$) and calcium molybdate ($CaMoO_4$)] nanocolloidal particles. The crystalline phase, particle morphology, particle size distribution, absorbance and optical band-gap were investigated. Stable colloidal suspensions consisting of well-dispersed $CaWO_4$ and $CaMoO_4$ nanoparticles with narrow size distribution could be obtained without any surfactant. Particle tracking analysis using optical microscope combined with image analysis was applied for a fast determination of particle size distribution in the prepared nanocolloidal suspensions. The mean nanoparticle size of $CaWO_4$ and $CaMoO_4$ colloidal nanoparticles were 16 nm and 30 nm, with the standard deviations of 2.1 and 5.2 nm, respectively. The optical absorption edges showed blue-shifted values about 60~70 nm than those of reported in bulk crystals. And also, the estimated optical energy band-gaps of $CaWO_4$ and $CaMoO_4$ colloidal particles were 5.2 and 4.7 eV. The observed band-gap widening and blue-shift of the optical absorbance could be ascribed to the quantum confinement effect due to the very small size of the $CaWO_4$ and $CaMoO_4$ nanocolloidal particles prepared by pulsed laser ablation in liquid.

PLD 기법으로 성장된 n형 TiO2에서 Nb 도너의 활성화 에너지 (The activation Energy of the Niobium donor in n-type TiO2 film grown by Pulsed Laser Deposition)

  • 배효정;하준석;박승환
    • 마이크로전자및패키징학회지
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    • 제21권4호
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    • pp.41-44
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    • 2014
  • 본 연구에서는 $TiO_2$에 나이오븀 (Nb) 도펀트가 주입되었을 때의 활성화 에너지를 홀 효과 측정 시스템과 온도에 따른 photoluminescence (PL) 실험을 통하여 살펴보았다. Nb 이 도핑 된 n형 아나타제 $TiO_2$ 박막은 pulsed laser deposition (PLD) 기법으로 $SrTiO_3$기판에 성장되었다. 측정 결과, Nb 도너의 활성화 에너지 값은 홀 효과 측정에서는 14.52 meV, PL 측정에서는 6.72 meV로 다소 차이를 보였다. 이 결과는 기존의 어셉터 물질의 활성화 에너지들과는 차이를 나타내고 있으며, 향후 본 연구와 같은 shallow 도너 준위의 활성화 에너지 연구에 대한 더 많은 연구가 필요할 것으로 판단된다.

직류 방전과 펄스 직류 방전에 의한 플라즈마 형상 관찰 (Observation of Plasma Shape by Continuous dc and Pulsed dc)

  • 양원균;주정훈
    • 한국표면공학회지
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    • 제42권3호
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    • pp.133-138
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    • 2009
  • Effects of bipolar pulse driving frequency between 50 kHz and 250 kHz on the discharge shapes were analyzed by measuring plasma characteristics by OES (Optical Emission Spectroscopy) and Langmuir probe. Plasma characteristics were modeled by a simple electric field analysis and fluid plasma modeling. Discharge shapes by a continuous dc and bipolar pulsed dc were different as a dome-type and a vertical column-type at the cathode. From OES, the intensity of 811.5 nm wavelength, the one of the main peaks of Ar, decreased to about 43% from a continuous dc to 100 kHz. For increasing from 100 kHz to 250 kHz, the intensity of 811.5 nm wavelength also decreased by 46%. The electron density decreased by 74% and the electron temperature increased by 36% at the specific position due to the smaller and denser discharge shape for increasing pulse frequency. Through the numerical analysis, the negative glow shape of a continuous dc were similar to the electric potential distribution by FEM (Finite Element Method). For the bipolar pulsed dc, we found that the electron temperature increased to maximum 10 eV due to the voltage spikes by the fast electron acceleration generated in pre-sheath. This may induce the electrons and ions from plasma to increase the energetic substrate bombardment for the dense thin film growth.

열음향 응용을 위한 1 kW급 UHF 대역 반도체 펄스 전력증폭기 (UHF-Band 1 kW Solid State Pulsed Power Amplifier for Thermoacoustic Imaging Application)

  • 이승민;박승표;최승범;이문규
    • 한국전자파학회논문지
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    • 제27권1호
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    • pp.92-95
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    • 2016
  • 본 논문에서는 UHF 대역인 900 MHz에서 열음향 영상(thermoacoustic imaging, TAI) 응용을 위한 1 kW급 반도체 펄스 전력 증폭기를 설계 및 제작하였다. 반도체 펄스 전력 증폭기는 단펄스(short pulse) 동작을 위하여 펄스 폭 $80{\mu}s$, 듀티사이클 1 %, 900 MHz의 캐리어 주파수 조건에서 설계되었다. 전체 전력 증폭기는 16개의 단일 전력 증폭기를 윌킨슨 전력 분배기를 통해 결합하여 제작되었고, 사용된 능동 소자는 Freescale사의 MRFE6P9220HR3 LDMOSFET이 사용되었다. 제작된 전력 증폭기는 입력 전력이 -16 dBm일 때 중심주파수에서 60.2 dBm의 출력 전력과 76.2 dB의 전력 이득, 그리고 25 %의 드레인 효율 특성을 나타내었다.

Parametric Studies of Pulsed Laser Deposition of Indium Tin Oxide and Ultra-thin Diamond-like Carbon for Organic Light-emitting Devices

  • Tou, Teck-Yong;Yong, Thian-Khok;Yap, Seong-Shan;Yang, Ren-Bin;Siew, Wee-Ong;Yow, Ho-Kwang
    • Journal of the Optical Society of Korea
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    • 제13권1호
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    • pp.65-74
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    • 2009
  • Device quality indium tin oxide (ITO) films are deposited on glass substrates and ultra-thin diamond-like carbon films are deposited as a buffer layer on ITO by a pulsed Nd:YAG laser at 355 nm and 532 nm wavelength. ITO films deposited at room temperature are largely amorphous although their optical transmittances in the visible range are > 90%. The resistivity of their amorphous ITO films is too high to enable an efficient organic light-emitting device (OLED), in contrast to that deposited by a KrF laser. Substrate heating at $200^{\circ}C$ with laser wavelength of 355 nm, the ITO film resistivity decreases by almost an order of magnitude to $2{\times}10^{-4}\;{\Omega}\;cm$ while its optical transmittance is maintained at > 90%. The thermally induced crystallization of ITO has a preferred <111> directional orientation texture which largely accounts for the lowering of film resistivity. The background gas and deposition distance, that between the ITO target and the glass substrate, influence the thin-film microstructures. The optical and electrical properties are compared to published results using other nanosecond lasers and other fluence, as well as the use of ultra fast lasers. Molecularly doped, single-layer OLEDs of ITO/(PVK+TPD+$Alq_3$)/Al which are fabricated using pulsed-laser deposited ITO samples are compared to those fabricated using the commercial ITO. Effects such as surface texture and roughness of ITO and the insertion of DLC as a buffer layer into ITO/DLC/(PVK+TPD+$Alq_3$)/Al devices are investigated. The effects of DLC-on-ITO on OLED improvement such as better turn-on voltage and brightness are explained by a possible reduction of energy barrier to the hole injection from ITO into the light-emitting layer.

전기선폭발법으로 제조된 철산화물의 뫼스바우어분광연구 (Study of Mössbauer Spectroscopy for Iron Oxides Synthesized by Pulsed Wire Evaporation (PEW))

  • 엄영랑
    • 한국자기학회지
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    • 제24권5호
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    • pp.135-139
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    • 2014
  • 물리적 기상합성법인 전기선폭발법을 이용하여 챔버내 산소분압을 바꾸면서 철산화물을 제조하였다. 제조된 철산화물은 산소 분압에 따라 $Fe_2O_3$$Fe_3O_4$상으로 제조되었다. 산소분압이 30 %인 경우 ${\gamma}-Fe_2O_3$${\alpha}-Fe_2O_3$와 같이 $Fe^{3+}$의 형성이 용이함을 확인 하였다. 산소 분압을 15 %로 줄이면 $Fe_3O_4$가 형성되어 $Fe^{2+}$ 이온을 확인할 수 있었다. 뫼스바우어분광분석을 활용하여 ${\gamma}-Fe_2O_3$$Fe_3O_4$상 분석을 수행하였다. 13 K에서 295 K까지의 뫼스바우어 스펙트럼으로부터 자기정렬구조가 사라진 면적비로부터 약 12 % 정도의 ${\gamma}-Fe_2O_3$상이 초상자성 특성을 보임을 확인하였다.

The superconductivity and pinning properties of Y2O3-doped GdBa2Cu3O7-δ films prepared by pulsed laser deposition

  • Oh, Won-Jae;Park, Insung;Yoo, Sang-Im
    • 한국초전도ㆍ저온공학회논문지
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    • 제20권4호
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    • pp.41-45
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    • 2018
  • We have investigated the effect of $Y_2O_3$ nanoparticles on the pinning properties of $Y_2O_3$-doped $GdBa_2Cu_3O_{7-{\delta}}$ (GdBCO) films. Both undoped and $Y_2O_3$-doped GdBCO films were grown on $CeO_2$-buffered MgO (100) single crystal substrates by pulsed laser deposition (PLD) using KrF (${\lambda}=248nm$) laser. The $Y_2O_3$ doping contents were controlled up to ~ 2.5 area% by varying the internal angles of $Y_2O_3$ sectors put on the top surface of GdBCO target. Compared with the $Gd_2O_3$-doped GdBCO films previously reported by our group [1], the $Y_2O_3$-doped GdBCO films exhibited less severe critical temperature ($T_c$) drop and thus slightly enhanced critical current densities ($J_c$) and pinning force densities ($F_p$) at 65 K for the applied field parallel to the c-axis of the GdBCO matrix (B//c) with increasing the doping content. Below 40 K, the in-field $J_c$ and $F_p$ values of all $Y_2O_3$-doped GdBCO films exhibited higher than those of undoped GdBCO film, suggesting that $Y_2O_3$ inclusions might act as effective pinning centers.

Measurements of a Round Jet with High-Definition 3D-PTV

  • Hwang, Tae-Gyu;Doh, Deog-Hee;Saga Tetsuo;Kenneth D. Kihm
    • Journal of Advanced Marine Engineering and Technology
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    • 제28권8호
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    • pp.1211-1224
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    • 2004
  • Two round jets. impinged and pulsed. were measured with high-resolution 3D-PTV technique. The measurement system consists of three CCD cameras, Ar-ion laser, an image grabber and a host computer. Two fitness functions were introduced in a genetic algorithm in order to enhance the correspondences of the particles. One was based on a concept of the continuum theory and the other one was based on a minimum distance error. The velocity profiles of the impinged jet obtained by the constructed 3D-PTV system were compared with those of LDV measurements made in this study. The head vortex of the jet was visualized by LIF and was reconstructed by the constructed high-resolution 3D-PTV system for comparisons.

Efficient Second Harmonic Generation of Pulsed Nd-YAG Laser Radiation with Noncritically Phase-Matchable $LiNbO_3$ in Room-Temperature

  • Jong-Soo Lee;Bong-Hoon Kang;Bum Ku Rhee;Chong-Don Kim;Gi-Tae Joo
    • The Korean Journal of Ceramics
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    • 제6권3호
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    • pp.206-208
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    • 2000
  • 0.65 mol% MgO-doped LiNbO$_3$single crystals were grown by CZ method. The obtained single crystals were colorless and transparent. Noncritically phase-matched second harmonic generation (SHG) of 532-nm radiation from 1064-nm in MgO-doped LiNbO$_3$has been investigated by using pulsed Nd:YAG laser. The phase-matching temperature was room temperature. SHG conversion efficiencies were typically achieved higher than 50% at the phase-matching temperature with no photorefractive damage in the region of fundamental power density which was used in this experiment. The thermo-birefringence coefficient and the electro-birefringence coefficient of SHG were calculated from the temperature phase-matching profile with the electric field.

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