• Title/Summary/Keyword: 2f-Line Frequency

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Design and Analysis of a Memoryless Minimum Bandwidth Birnary Line Code MB58 (Memoryless 최소대역폭 2진 선로부호 MB58의 설계 및 분석)

  • 김정환;김대영
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.17 no.10
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    • pp.1074-1080
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    • 1992
  • A(5,8) block binary line code is proposed. The new line code called MB58 has the properties of being dc-free and runlength-limited, and it is strictly bandwidth-limited to the Nyquist frequency, such that bandwidth efficiency is improved. This new code is a memoryless code with a simple decoding rule and capability of error monitoring. The power spectrum and the eye pattern of the new code are obtained by simulation, wherein spectral nulls at DC(f=0) and Nyquist frequency (f=1/2Ts) are clearly identified.

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A Dual-band Balanced Amplifier Using Meta-material Transmission Line (메타물질 전송선로를 이용한 이중대역 평형증폭기)

  • Lim, Jong-Sik;Lee, Jae-Hoon;Lee, Jun;Jeon, Yuck-Hwan;Jeong, Yong-Chae;Han, Sang-Min;Ahn, Dal
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.60 no.12
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    • pp.2305-2310
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    • 2011
  • This paper describes a design of dual band balanced amplifier using a lefted handed meta-material transmission line structure for high frequency application. Meta-material transmission lines have been known to have dual band frequency responses. A dual band branch line hybrid coupler is designed using the meta-material transmission lines, and measured at first. Two identical dual band amplifiers are also designed, built and tested using the same meta-material transmission structure. The proposed dual band balanced amplifier is composed of those dual band branch line hybrid coupler and amplifiers. In order to suggest an design example, a prototype of dual band balanced amplifier is built and measured at the dual frequencies, 1800MHz($f_1$) and 2300MHz($f_2$). The simulation and measurement show that the fabricated balanced amplifier operates well at the desired dual frequencies bands with the gain of 11.12dB and 17.67dB at $f_1$ and $f_2$, respectively, with a good agreement with the simulation results.

A Novel Frequency Doubler using Feedforward Structure and DGS Microstrip for Fundamental and High-Order Components Suppression (Feedforward 구조와 DGS를 이용하여 기본 신호와 3차 이상의 고조파 신호를 제거한 2차 주파수 체배기 설계)

  • 황도경;임종식;정용채
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.14 no.5
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    • pp.513-520
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    • 2003
  • In this paper, a novel design concept of frequency doubler using feedforward technique and DGS microstrip line is proposed. The feedforward loop plays a role of fundamental frequency suppression and DGS microstrip line suppresses over the 3rd order harmonic components. By using this new concept, the high suppression for the undesired signals could be achieved easily. The proposed technique is experimentally demonstrated in 1.87 GHz-to-3.74 GHz frequency doubler. The output power of -3 dBm at the frequency of 3.74 GHz(2f$\_$0/) is measured with 42.9 dB suppression of the fundamental frequency signal(f$\_$0/), 20.2 dB suppression of the 3rd harmonic signal(3f$\_$0/) and B9.7 dB suppression of the 4th harmonic signal(4f$\_$0/). The conversion loss of -2.34 dB ∼ -5.8 dB at the bandwidth of 100 MHz, the phase noise of -97.51 dB/Hz(@10 kHz) were measured.

The increased GUS gene inactivation over generation in Arabidopsis transgenic lines (애기장대 형질전환 식물체의 세대경과에 따른 GUS유전자의 비활성화에 관한 연구)

  • Park, Soon-Ki
    • Journal of Life Science
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    • v.12 no.1
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    • pp.67-76
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    • 2002
  • The effect of transgene inactivation in T2, T3 and F2 generations was analyzed in progeny seedlings which had been generated by Agrobacterium (LBA4404/pBI121)-mediated transformation in Arabidopsis thaliana. In a system which investigated in the expression of $\beta$-glucuronidase(GUS)gene in kanamycin-resistant (ke $n^{R}$)seedlings, GUS inactivated seedlings were observed in 5 of 12 tested lines of T2 generation and the frequency of GUS inactivation was approximately 2.3%. Lines with multi-copies of T-DNA exhibited severe GUS gene inactivation with the frequency of 5.8% in T2 generation. In T3 generation lines exhibited GUS gene inactivation with the frequency of 1.3%. In contrast, inactivation increased dramatically up to 12.6% in multi-copy T-DNA line. A similar phenomenon was also found in F2 progeny from a transgenic line which had been crossed with wild-type Arabidopsis plant, WS-O (GUS gene inactivation frequency 9.9%). These results indicate that the foreign gene introduced into the plant was inactivated progressively in its transmission during subsequent generations and the transgenic line with multi-copies of T-DNA tended to show more increased inactivation.

Design and Analysis of a Minimum Bandwidth Binary Line Code MB34 (최소대역폭 2진 선로부호 MB34의 설계 및 분석)

  • 김정환;김대영
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.29A no.8
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    • pp.10-17
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    • 1992
  • A new line code design technique based on the BUDA(Binary Unit DSV and ASV) concept is introduced. The new line code called MB34 and designed by this new technique is of the minimum bandwidth, dc-free, and runlength limited. To confirm the performance of the new code, its power spectrum and eye pattern are obtained, wherein spectral nulls at dc(f=0) and Nyguist frequency (f=1/2Ts) are clearly identified. It is also discussed how the transmission errors can be detected by monitoring the DSV, the ASV, and the runlength.

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Electrical and Structural Design of Air-conditioning Fan Motor for Noise Reduction

  • Han Hyung-Suk;Mo Jin-Yong;Kim Chang-Hyun;Lee Jae-Kwon;Jeong Weui-Bong
    • Journal of Mechanical Science and Technology
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    • v.20 no.10
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    • pp.1653-1661
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    • 2006
  • AC induction motors have been widely used for fan motor of the air conditioner indoor unit. Noise of these AC induction motors is usually caused by the coupling effects of structural and electrical systems. The rotating torque and the noise from AC induction motor were discussed in this paper,. First, the modification of motor was carried out in order to reduce the unbalance magneto motive force between main and sub winding. Second, structural modification based on normal mode analysis and modal testing was carried out so that the fan motor does not have the natural frequencies near the 2f-line frequency. Numerical modifications through these two processes were verified by experiments, which showed that the sound pressure level at 2f-line frequency of the modified system became about 25dB less than that of conventional one.

Group Delay Time Matched CMOS Microwave Frequency Doubler (군지연 시간 정합 CMOS 마이크로파 주파수 체배기)

  • Song, Kyung-Ju;Kim, Seung-Gyun;Choi, Heung-Jae;Jeong, Yong-Chae
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.19 no.7
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    • pp.771-777
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    • 2008
  • In this paper, a frequency doubler using modified time-delay technique is proposed. A voltage controlled delay line (VCDL) in the proposed frequency doubler compensates the group delay time mismatching between input and delayed signal. With the group delay time matching and waveform shaping using the adjustable Schmitt triggers, the unwanted fundamental component($f_0$) and the higher order harmonics such as third and fourth are diminished excellently. In result, only the doubled frequency component($2f_0$) appears dominantly at the output port. The frequency doubler is designed at 1.15 GHz of $f_0$ and fabricated with TSMC $0.18\;{\mu}m$ CMOS process. The measured output power at $2f_0$ is 2.67 dBm when the input power is 0 dBm. The obtained suppression ratio of $f_0,\;3f_0$, and $4f_0$ to $2f_0$ are 43.65, 38.65 and 35.59 dB, respectively.

Role of $N_2$ flow rate on etch characteristics and variation of line edge roughness during etching of silicon nitride with extreme ultra-violet resist pattern in dual-frequency $CH_2F_2/N_2$/Ar capacitively coupled plasmas

  • Gwon, Bong-Su;Jeong, Chang-Ryong;Lee, Nae-Eung;Lee, Seong-Gwon
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.02a
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    • pp.458-458
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    • 2010
  • The process window for the etch selectivity of silicon nitride ($Si_3N_4$) layers to extreme ultra-violet (EUV) resist and variation of line edge roughness (LER) of EUV resist were investigated durin getching of $Si_3N_4$/EUV resist structure in a dual-frequency superimposed capacitive coupled plasma (DFS-CCP) etcher by varying the process parameters, such as the $CH_2F_2$ and $N_2$ gas flow rate in $CH_2F_2/N_2$/Ar plasma. The $CH_2F_2$ and $N_2$ flow rate was found to play a critical role in determining the process window for infinite etch selectivity of $Si_3N_4$/EUV resist, due to disproportionate changes in the degree of polymerization on $Si_3N_4$ and EUV resist surfaces. The preferential chemical reaction between hydrogen and carbon in the hydrofluorocarbon ($CH_xF_y$) polymer layer and the nitrogen and oxygen on the $Si_3N_4$, presumably leading to the formation of HCN, CO, and $CO_2$ etch by-products, results in a smaller steady-state hydrofluorocarbon thickness on $Si_3N_4$ and, in turn, in continuous $Si_3N_4$ etching due to enhanced $SiF_4$ formation, while the $CH_xF_y$ layer is deposited on the EUV resist surface. Also critical dimension (and line edge roughness) tend to decrease with increasing $N_2$ flow rate due to decreased degree of polymerization.

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The fabrication of 2GHz Circulator using $Y_{3-2x}$ $Ca_x$S $n_x$F $e_{3.5}$A $l_{1.5}$ $O_{12}$ Garnet ( $Y_{3-2x}$ $Ca_x$S $n_x$F $e_{3.5}$A $l_{1.5}$ $O_{12}$ 가네트 자성체를 이용한 2GHz 대 서큘레이터 구현)

  • 박정래;김태홍;전동석;한진우
    • Journal of the Korean Institute of Telematics and Electronics D
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    • v.34D no.12
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    • pp.14-21
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    • 1997
  • This study was conducte dto fabricate 2GHz circulator using Ca,Sn substituted UIG(yttrium iron garnet)ceramics. When the electric, magnetic and microwave properties were measured in Ca, Sn substituted YIG, the measured perimittivity and perfmeability in microwave frequencies were 16.25, 0.8964. For $Y_{2.4}$C $a_{0.3}$A $n_{0.3}$F $e_{3.5}$A $l_{1.5}$ $O_{12}$ garnet ceramics sintered at 1400.deg. C, the ferrimagnetic resonance line width (.DELTA.H) at 10GHz was 53 Oe and saturation magnetization was 375G. The strip-line circulator was simulated with 3-D FEM (finite element method) software and designed at the center frequency of 2GHz. The fabricated strip-line junction circulator using above YIG ceramics had insertion loss of 1.271dB, return loss of 23.843dB, isolation of 21.751dB at the center frequency 1.855GHz.z.z.z.z.z.z.

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Role of CH2F2 and N-2 Flow Rates on the Etch Characteristics of Dielectric Hard-mask Layer to Extreme Ultra-violet Resist Pattern in CH2F2/N2/Ar Capacitively Coupled Plasmas

  • Kwon, B.S.;Lee, J.H.;Lee, N.E.
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.210-210
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    • 2011
  • The effects of CH2F2 and N2 gas flow rates on the etch selectivity of silicon nitride (Si3N4) layers to extreme ultra-violet (EUV) resist and the variation of the line edge roughness (LER) of the EUV resist and Si3N4 pattern were investigated during etching of a Si3N4/EUV resist structure in dual-frequency superimposed CH2F2/N2/Ar capacitive coupled plasmas (DFS-CCP). The flow rates of CH2F2 and N2 gases played a critical role in determining the process window for ultra-high etch selectivity of Si3N4/EUV resist due to disproportionate changes in the degree of polymerization on the Si3N4 and EUV resist surfaces. Increasing the CH2F2 flow rate resulted in a smaller steady state CHxFy thickness on the Si3N4 and, in turn, enhanced the Si3N4 etch rate due to enhanced SiF4 formation, while a CHxFy layer was deposited on the EUV resist surface protecting the resist under certain N2 flow conditions. The LER values of the etched resist tended to increase at higher CH2F2 flow rates compared to the lower CH2F2 flow rates that resulted from the increased degree of polymerization.

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