• Journal of the Korean Society for Precision Engineering
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• v.12 no.7
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• pp.46-52
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• 1995

This paper proposes methodologies for the development of radiation thermometer using InSb photo-detector of which spectral sensitivity is excellent over the wave length range of 2 .mu. m .approx. 5 .mu. m. The proposed radiation thermometer has broad measurement range from normal to high, up to more than 1000 .deg. C, with high accuracy, and can measure temperature on the material surface or heat emission noncontactely with high speed. Optical system was consisted of two convex lens with foruslength of 15.2mm for infrared lay focusing, Ge filter to cut the short wave length components and sapphire filter to cut the long wave length components. The cold shielded was installed in the whole surface of the light-absorbing element to remove the error- mometer, calibration using black body furnace which has temperature range of 90 .deg. C .approx. 1100 .deg. C was carried out, and temperature calaibration curve was obtained by exponential function curvefitting. The result shows maximum error less than 0.24%(640K .+-. 1.6K) over the measurement range of 90 .deg. C .approx. 700 .deg. C, and from this result the usefulness of the developed thermometer has been confirmed.

• Journal of the Korean Society for Precision Engineering
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• v.14 no.11
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• pp.69-76
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• 1997

The rotating bending fatigue tests were performed using the specimens taken from Cr-Mo-V steel, widely sued in thermal power plant turbines, at various temperatures such as room temperature, 300 .deg. C, 425 .deg. C and 550 .deg. C. The characteristics of fatigue crack propagation were examined and analyzed by using fracture mechanics parameter. The plastic replica method was also applied in order to measure the crack length on the basis of serial observation of fatigue crack propagation behavior on the defected specimen surface. The fatigue crack propagation behavior of Cr-Mo-V steel was investigated within the frame work of elastic-plastic fracture mechanics. The propagation law of fatigue crack is obtained uniquely by using the term .sigma. $^{n}$ sub a/where .sigma. $_{a}$ is the service stress, a is the crack length and n is a constant. The values of constant n are nearly equal to 2.48, 2.60 and 8.61 at room temperature, 300 .deg. C and 425 .deg. C.

• Journal of The Korean Society of Grassland and Forage Science
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• v.34 no.2
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• pp.114-119
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• 2014

Salinity and drought stresses are probably the most significant abiotic factor limiting plant's growth, also negatively affect seed germination and early seedling development. To study on effect of NaCl and PEG stress on seed germination and gene expression pattern of tall fescue, the levels of NaCl and PEG-induced water stresses were determined in first experiment. Different concentration of NaCl (0 to 350 mM) and PEG (0 to 30%) were used for seed treatment. Seed Germination percentage reduced with increasing osmotic potential of growth medium either due to NaCl or PEG. Seeds were not germinate at 350 mM NaCl or 30% PEG treatment. On the basis of the results, Kentucky31(E-) had more resistant than Fawn in both stress conditions. Furthermore, we have used an annealing control primer-based differential display reverse transcription-polymerase chain reaction method to identify salt- and drought stress-induced differentially expressed genes (DEGs) in tall fescue leaves. Using 120 annealing control primers, a total of 4 genes were identified and sequenced. The possible roles of the identified DEGs are discussed in the context of their putative role during salinity and drought stresses.

• Transactions of the Korean Society of Mechanical Engineers
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• v.16 no.6
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• pp.1121-1140
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• 1992

In metal cutting the shape of generated chip varies according to cutting conditions, characteristics of workpiece and geometry of cutting tool. The best surface roughness of machined workpiece is obtained when generating flow type contrinuous chip. If the generated chip is not broken, that is not only tangled workpiece and cutting tool, but also may give damage on the machined surface of workpiece or danger for a operator. The flow type continuous chip may bring the low productivity in high speed any heavy cutting, automatic machining process and non-human factory. There are two type of chip break process ; controlling cutting condition and using chip breaker. In present study we carried out the experiment on new type chip breaker compared with conventional type and proved the efficiency of a new type and showed the chip break condition to be applied in actual metal cutting. In the experiment SM 20 C as a workpiece material and WC as a tool material were used and cutting speed of 30-150m/min, feed of 0.071-0.210mm/rev and depth of cut of 1mm were applied as cutting condition. The results of the experiment are as follows : (1) The mechanism of chip curl can be explained more clearly by plastic flow of workpiece material and moment of shearing force. (2) The most effective radius of curled chip and flat distance from cutting edge is 2.0-2.5mm and 1.5mm in both types. (3) The effective inclination angle of chip break surface and side cutting edge angle are 30.deg.- 45.deg. and 20.deg. in conventional type, while the radius of arc surface, lower arc angle A, upper arc angle B and side cutting edge angle are 3mm, 20.deg.- 45.deg., 0.deg.- 45.deg. and 10.deg.- 20.deg. in new type. (4) The probability to be obtained 100% chip breaking ratio is much higher in new type than in conventional type.

• Journal of the Korean Mathematical Society
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• v.52 no.5
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• pp.991-1001
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• 2015

In this work we obtain conditions for nonspecial line bundles on general ${\kappa}$-gonal curves failing to be normally generated. Let L be a nonspecial very ample line bundle on a general ${\kappa}$-gonal curve X with ${\kappa}{\geq}4$ and $deg\mathcal{L}{\geq}{\frac{3}{2}}g+{\frac{g-2}{{\kappa}}}+1$. If L fails to be normally generated, then L is isomorphic to $\mathcal{K}_X-(ng^1_{\kappa}+B)+R$ for some $n{\geq}1$, B and R satisfying (1) $h^0(R)=h^0(B)=1$, (2) $n+3{\leq}degR{\leq}2n+2$, (3) $deg(R{\cap}F){\leq}1$ for any $F{\in}g^1_k $. Its converse also holds under some additional restrictions. As a corollary, a very ample line bundle $\mathcal{L}{\simeq}\mathcal{K}_X-g^0_d+{\xi}^0_e$ is normally generated if $g^0_d{\in}X^{(d)}$ and ${\xi}^0_e{\in}X^{(e)}$ satisfy $d{\leq}{\frac{g}{2}}-{\frac{g-2}{\kappa}}-3$, supp$(g^0_d{\cap}{\xi}^0_e)={\phi}$ and deg$(g^0_d{\cap}F){\leq}{\kappa}-2$ for any $F{\in}g^1_k$.

• Journal of the Korean Vacuum Society
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• v.17 no.4
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• pp.359-364
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• 2008

We have investigated optical and structural properties of $Al_{0.3}Ga_{0.7}N$/GaN and $Al_{0.3}Ga_{0.7}N/GaN/Al_{0.15}Ga_{0.85}N/GaN$ heterostructures (HSs) grown by metal-organic chemical vapor deposition, by means of Hall measurement, high-resolution X-ray diffraction, and temperature- and excitation power-dependent photoluminescence (PL) spectroscopy. A strong GaN band edge emission and its longitudinal optical phonon replicas were observed for all the samples. At 10 K, a 2DEG-related PL peak located at ${\sim}\;3.445\;eV$ was observed for $Al_{0.3}Ga_{0.7}N$/GaN HS, while two 2DEG peaks at ${\sim}\;3.42$ and ${\sim}\;3.445\;eV$ were observed for $Al_{0.3}Ga_{0.7}N/GaN/Al_{0.15}Ga_{0.85}N/GaN$ HS due to the additional $Al_{0.15}Ga_{0.85}N$ layers. Moreover, the emission intensity of the 2DEG peak was higher in $Al_{0.3}Ga_{0.7}N/GaN/Al_{0.15}Ga_{0.85}N/GaN$ HS than in $Al_{0.3}Ga_{0.7}N$/GaN HS probably due to an effective confinement of the photo-excited holes by the additional $Al_{0.15}Ga_{0.85}N$ layers. The 2DEG-related emission intensity decreased with increasing temperature and disappeared at temperatures above 150 K. To investigate the origin of the new 2DEG peaks, the energy-band structure for multiple AlGaN/GaN HSs were simulated and compared with the experimental data. As a result, the observed high- and low-energy peaks of 2DEG can be attributed to the spatially-separated 2DEG emissions formed at different AlGaN/GaN heterointerfaces.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.3
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• pp.126-134
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• 1996

Tungsten silicide films were deposited on the phosphorus-doped poly-Si/SiO$_{2}$/Si-substrates by LPCVD (low pressue chemical vapor deposition). The formation and various properties of tungsten silicide processed by furnace annealing in N$_{2}$ ambient were evaluated by using XRD. AFM, 4-point probe and SEM. And the redistribution of phosphorus atoms has been observed by SIMS. The crystal structure of the as-deposited tungsten silicide films were transformed from the hexagonal to the tetragonal structure upon annealing at 550.deg. C. The surface roughness of tungsten polycide films were found to very smoothly upon annelaing at 850.deg. C and low phosphorus concentration in polysilicon layer. The sheet resistance of tungsten polycide low phosphorus concentration in polysilicon layer. The sheet resistance of tungsten polycide films are measured to be 2.4 .ohm./ㅁafter furnace annealing at 1100.deg. C, 30min. It was found that the sheet resistance of tungsten polycide films upon annealing above 1050.deg. C were independant on the phosphorus concentration of polysilicon layer and furnace annealing times. An out-diffusion of phosphorus impurity through tungsten silicide film after annealing in $O_{2}$ ambient revealed a remarkably low content of dopant by oxide capping.

• Kyungpook Mathematical Journal
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• v.64 no.1
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• pp.185-196
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• 2024

In this article, we investigate the growth of meromorphic solutions of $${\alpha}(z)(\frac{{\Delta}_c{\eta}}{{\eta}})^2\,+\,(b_2(z){\eta}^2(z)\;+\;b_1(z){\eta}(z)\;+\;b_0(z))\frac{{\Delta}_c{\eta}}{{\eta}} \atop =d_4(z){\eta}^4(z)\;+\;d_3(z){\eta}^3(z)\;+\;d_2(z){\eta}^2(z)\;+\;d_1(z){\eta}(z)\;+\;d_0(z),$$ where a(z), b_i(z) for i = 0, 1, 2 and d_j (z) for j = 0, ..., 4 are given functions, △_cη = η(z + c) - η(z) with c ∈ ℂ\{0}. In particular, when the a(z), the b_i(z) and the d_j(z) are polynomials, and d₄(z) ≡ 0, we shall show that if η(z) is a transcendental entire solution of finite order, and either deg a(z) ≠ deg d₀(z) + 1, or, deg a(z) = deg d₀(z) + 1 and ρ(η) ≠ ½, then ρ(η) ≥ 1.

• Electrical & Electronic Materials
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• v.3 no.4
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• pp.306-314
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• 1990

SrO-5.7Fe$_{2}$O$_{3}$의 Magnetoplumbite형 Sr페라이트에 첨가제 SiO$_{2}$, H$_{3}$BO$_{3}$CaCO$_{3}$, SrCO$_{3}$을 0.1-0.1wt%로 변화시켜 만든 등방성과 이방성의 자기이력곡선, 밀도, 감자곡선, 고유보자력 및 미세구조특성에 미치는 영향을 조사하였다. 위 첨가제는 페라이트 생성 및 특성개선에 효과적이었도 특히 등방성에서의 입도크기를 3.5.mu.m에서 1.7.mu.m로 하였을때 소결온도가 40.deg.C 낮은 1220.deg.C에서 잔류자속밀도가 2300G, 보자력이 1950Oe, 밀도가 4.51g/Cm$^{3}$, 교유보자력이 3500Oe로 각각 증가하였다. 이방성은 등방성 보다 원등히 우수하였고 최대에너지적 (BH)$_{max}$이 소결온도가 10.deg.C 낮은 1210.deg.C에서 1.13으로 부터 3.3MGOe로 증가하였다. 이값은 이론치의 61%에 도달하고 있다.

• Electrical & Electronic Materials
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• v.6 no.6
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• pp.573-581
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• 1993

0.10Pb(Sb$_{1}$2/Sn$_{1}$2/)O$_{3}$-0.25PbTiO$_{3}$-0.65PbZrO$_{3}$ 세라믹을 소결온도 및 시간을 각각 1200-1250[.deg.C]에서 2, 4, 6시간으로 변화시켜 제작하였으며 시편의 소결조건 및 MnO$_{2}$(0~0.30mol%)첨가량에 따른 잡음특성을 관찰하였다. 초전계수 및 전압감도는 1250[.deg.C]에서 2시간 소결시킨 시편에서 각각 3.49x$10^{-8}$[C/$cm^{2}$K], 147[V/W]의 최대값을 나타내었다. 초전형 적외선 검출기의 잡음특성에 있어 증폭기의 전류잡음 .DELTA.V$_{i}$가 총 잡음전압에 대해 지배적인 경향을 나타내었으며 MnO$_{2}$가 0.24[mol%] 첨가된 1250[.deg.C]에서 2시간 소결시킨 시편에서 가장 양호한 pop-corn잡음특성을 나타내었다.다.