• Journal of Microbiology and Biotechnology
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• v.32 no.2
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• pp.228-237
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• 2022

In this study, the effects of the immune stimulator Euglena gracilis (Euglena) in cyclophosphamide (CCP)-induced immunocompromised mice were assessed. The key component β-1,3-glucan (paramylon) constitutes 50% of E. gracilis. Mice were orally administered Euglena powder (250 and 500 mg/kg body weight (B.W.)) or β-glucan powder (250 mg/kg B.W.) for 19 days. In a preliminary immunology experiment, ICR mice were intraperitoneally injected with 80 mg of CCP/kg B.W. during the final 3 consecutive days. In the main experiment, BALB/c mice were treated with CCP for the final 5 days. To evaluate the enhancing effects of Euglena on the immune system, mouse B.W., the spleen index, natural killer (NK) cell activity and mRNA expression in splenocytes lungs and livers were determined. To detect cytokine and receptor expression, splenocytes were treated with 5 ㎍/ml concanavalin A or 1 ㎍/ml lipopolysaccharide. The B.W. and spleen index were significantly increased and NK cell activity was slightly enhanced in all the experimental groups compared to the CCP-only group. In splenocytes, the gene expression levels of tumor necrosis factor-α, interferon-γ, interleukin (IL)-10, IL-6, and IL-12 receptor were increased in the E. gracilis and β-glucan groups compared to the CCP-only group, but there was no significant difference. Treatment with 500 mg of Euglena/kg B.W. significantly upregulated dectin-1 mRNA expression in the lung and liver compared to the CCP-only group. These results suggest that Euglena may enhance the immune system by strengthening innate immunity through immunosuppression.

• Journal of Microbiology and Biotechnology
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• v.33 no.4
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• pp.493-499
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• 2023

In this study we evaluated the immune-enhancing effects of β-glucan, the main component of Euglena gracilis (Euglena), and Euglena on inflammatory factor expression in RAW264.7 macrophages and ICR mice with cyclophosphamide-induced immunosuppression. Macrophages were treated with β-glucan or Euglena for 48 h. The β-glucan and Euglena groups exhibited higher levels of inducible nitric oxide synthase, nitric oxide, and tumor necrosis factor (TNF)-α than the control (vehicle alone) group. Animals were fed saline and β-glucan (400 mg/kg body weight (B.W.)) or Euglena (400 or 800 mg/kg B.W.) for 19 days, and on days 17-19, cyclophosphamide (CCP, 80 mg/kg B.W.) was administered to induce immunosuppression in the ICR mouse model. CCP reduced the body weight, spleen index, and cytokine expression of the mice. To measure cytokine and receptor expression, splenocytes were treated with concanavalin A (ConA) or lipopolysaccharide (LPS) as a mitogen for 24 h. In vivo, ConA stimulation significantly upregulated the expression of interferon (IFN)-γ, interleukin (IL)-10, IL-12 receptor β1, IL-1β, and IL-2 in splenocytes from the β-glucan- or Euglena-treated groups compared with those in the splenocytes from the CCP-treated group; LPS stimulation increased the levels of the cytokines TNF-α, IL-1β, and IL-6 in splenocytes from the β-glucan- or Euglena- treated groups compared with those from the CCP-treated group, but most of these differences were not significant. These results demonstrate the effect of Euglena in ameliorating macrophages and immunosuppression in CCP-treated mice. Thus, Euglena has the potential to enhance macrophage- and splenocyte- mediated immune-stimulating responses.

• Korean Journal of Materials Research
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• v.19 no.2
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• pp.61-67
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• 2009

Electrolessly deposited Co (Re,P) was investigated as a possible capping layer for Cu wires. 50 nm Co (Re,P) films were deposited on Cu/Ti-coated silicon wafers which acted as a catalytic seed and an adhesion layer, respectively. To obtain the optimized bath composition, electroless deposition was studied through an electrochemical approach via a linear sweep voltammetry analysis. The results of using this method showed that the best deposition conditions were a $CoSO_4$ concentration of 0.082 mol/l, a solution pH of 9, a $KReO_4$ concentration of 0.0003 mol/l and sodium hypophosphite concentration of 0.1 mol/L at $80^{\circ}C$. The thermal stability of the Co (Re,P) layer as a barrier preventing Cu was evaluated using Auger electron spectroscopy and a Scanning calorimeter. The measurement results showed that Re impurities stabilized the h.c.p. phase up to $550^{\circ}C$ and that the Co (Re,P) film efficiently blocked Cu diffusion under an annealing temperature of $400^{\circ}C$ for 1hr. The good barrier properties that were observed can be explained by the nano-sized grains along with the blocking effect of the impurities at the fast diffusion path of the grain boundaries. The transformation temperature from the amorphous to crystal structure is increased by doping the Re.

• Journal of the Korean Vacuum Society
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• v.19 no.3
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• pp.211-216
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• 2010

The luminescence properties of $In_{0.5}Ga_{0.5}As/In_{0.5}Al_{0.5}As$ multiple quantum wells (MQWs) grown on $In_{0.5}Al_{0.5}As$ buffer layers have been studied by using photoluminescence (PL) and time-resolved PL measurements. A$1-{\mu}m$ thick $In_{0.5}Al_{0.5}As$ buffer layers were deposited on a 500 nm thick GaAs layer, followed by the deposition of the InGaAs/InAlAs MQWs. In order to investigate the effects of InAlAs buffer layer on the optical properties of the MQWs, four different temperature sequences are used for the growth of InAlAs buffer layer. The growth temperature for InAlAs buffer layer was varied from 320^{\circ}C to $580^{\circ}C$. The MQWs consist of three $In_{0.5}Ga_{0.5}$As wells with different well thicknesses (2.5 nm, 4.0 nm, and 6.0 nm thick) and 10 nm thick $In_{0.5}Al_{0.5}$As barriers. The PL spectra from the MQWs with InAlAs layer grown at lower temperature range ($320-580^{\circ}C$) showed strong peaks from 4 nm QW and 6 nm QW. However, for the MQWs with InAlAs buffer grown at higher temperature range ($320-480^{\circ}C$), the PL spectra only showed a strong peak from 6 nm QW. The strongest PL intensity was obtained from the MQWs with InAlAs layer grown at the fixed temperature of $480^{\circ}C$, while the MQWs with buffer layer grown at higher temperature from $530^{\circ}C$ to $580^{\circ}C$ showed the weakest PL intensity. From the emission wavelength dependence of PL decay times, the fast and slow decay times may be related to the recombination of carriers in the 4 nm QW and 6 nm QW, respectively. These results indicated that the growth temperatures of InAlAs layer affect the structural and optical properties of the MQWs.

• Journal of the Korean Vacuum Society
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• v.20 no.6
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• pp.449-455
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• 2011

The luminescence properties of $In_{0.5}Ga_{0.5}As/In_{0.5}Al_{0.5}As$ multiple quantum wells (MQWs) grown on $In_{0.4}Al_{0.6}As$ buffer layer have been investigated by using photoluminescence (PL) and time-resolved PL measurements. A 1-${\mu}m$-thick $In_{0.4}Al_{0.6}As$ buffer layers were deposited at various temperatures from $320^{\circ}C$ to $580^{\circ}C$ on a 500-nm-thick GaAs layer, and then 1-${\mu}m$-thick $In_{0.5}Al_{0.5}As$ layers were deposited at $480^{\circ}C$, followed by the deposition of the InGaAs/InAlAs MQWs. In order to study the effects of $In_{0.4}Al_{0.6}As$ layer on the optical properties of the MQWs, four different temperature sequences are used for the growth of $In_{0.4}Al_{0.6}As$ buffer layer. The MQWs consist of three $In_{0.5}Al_{0.5}As$ wells with different well thicknesses (2.5-nm, 4.0-nm, and 6.0-nm-thick) and 10-nm-thick $In_{0.5}Al_{0.5}As$ barriers. The PL peaks from 4-nm QW and 6-nm QW were observed. However, for the MQWs on the $In_{0.4}Al_{0.6}As$ layer grown by using the largest growth temperature variation (320-$580^{\circ}C$), the PL spectrum only showed a PL peak from 6-nm QW. The carrier decay times in the 4-nm QW and 6-nm QW were measured from the emission wavelength dependence of PL decay. These results indicated that the growth temperatures of $In_{0.4}Al_{0.6}As$ layer affect the optical properties of the MQWs.

• Journal of the Microelectronics and Packaging Society
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• v.19 no.1
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• pp.39-45
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• 2012

Three-dimensional integrated circuit(3D IC) technology has become increasingly important due to the demand for high system performance and functionality. In this work, BOE and HF wet etching of Cu line surfaces after CMP were conducted for Cu-Cu pattern direct bonding. Step height of Cu and $SiO_2$ as well as Cu dishing after Cu CMP were analyzed by the 3D-Profiler. Step height increased and Cu dishing decreased with increasing BOE and HF wet etching times. XPS analysis of Cu surface revealed that Cu surface oxide layer was partially removed by BOE and HF wet etching treatment. BOE treatment showed not only the effective $SiO_2$ etching but also reduced dishing and Cu surface oxide rather than HF treatment, which can be used as an meaningful process data for reliable Cu-Cu pattern bonding characteristics.

• Journal of the Korean Magnetics Society
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• v.17 no.4
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• pp.156-161
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• 2007

To develop array magnetic sensors, specular-type giant magnetoresistive- spin valve (GMR-SV) film of Glass/Ta(5)MiFe(7)/IrMn(10)NiFe(5)/$O_2$/CoFe(5)/Cu(2.6)/CoFe(5)/$O_2$/NiFe(7)/Ta(5)(nm) was deposited by using a high-vacuum sputtering system. One of 15 way sensors in the area of $8{\times}8mm^2$ was Patterned a size of $20{\times}80{\mu}m^2$ in multilayer sample by Photo-lithography. All of 15 sensors with Cu electrodes were measured a uniform magnetic properties by 2-probe method. The highest magnetic sensitivity of MR and output voltage measured nearby an external magnetic field of 5 Oe were MS = 0.5%/Oe and ${\triangle}$V= 3.0 mV, respectively. An easy-axis of top-free layers of $CoFe/O_2/NiFe$ with shape anisotropy was perpendicular to one of bottom-pinned layers $IrMn/NiFe/O_2/CoFe$. When the sensing current increased from 1 mA to 10 mA, the output working voltage uniformly increased and the magnetic sensitivity was almost stable to use the nano-magnetic devices with good sensitive properties.

• Journal of computational fluids engineering
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• v.17 no.4
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• pp.16-23
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• 2012

Current display manufacturing processes apply thermal treatment of glass backplanes widely for hydrogen degassing, crystallization of thin-films, tempering, forming, and precompaction. Estimation of the characteristics of transient heating stages and thermal non-uniformities on a single glass substrate or in a stack of glasses are extremely helpful to understand non-homogeneity of mechanical and electronic features of nano/micro structures of end products. Based on simple heat transfer models and using an electric muffle furnace, temperature variations in a glass stack were predicted and measured for glass backplanes of $1.5{\times}1.85m^2$ in size and 0.7 mm in thickness. Except for the period of putting glass backplanes into the furnace, thermal radiation was the major heating mechanism for the treatment and theoretical predictions agreed well to the experimental temperatures on the backplanes. Using the theoretical model, thermal fields for a glass stack of glass-size, $2.2{\times}2.5m^2$, and of the number of sheets, 1 to 12, were calculated for practical design and manufacturing of the muffle furnace for large-scale displays, e.g. up to $8^{th}$ generation.

• Nuclear Engineering and Technology
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• v.52 no.11
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• pp.2585-2593
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• 2020

Swift heavy ion (SHI) beam irradiation can generate desirable defects in materials by transferring sufficient energy to the lattice that favours huge possibilities in tailoring of materials. The effect of Ag¹⁵⁺ ion irradiation with energy 200 MeV on spray deposited V₂O₅ thin films of thickness 253 nm is studied at various ion doses from 5 × 10¹¹ to 1 × 10¹³ ions/㎠. The XRD results of pristine film confirmed orthorhombic structure of V₂O₅ and its average crystallite size was found to be 20 nm. The peak at 394 cm^-1 in Raman spectra confirmed O-V-O bonding of V₂O₅, whereas 917 cm^-1 arise because of distortion in stoichiometry by a loss of oxygen atoms. Raman peaks vanished completely above the ion fluence of 5 × 10¹² ions/㎠. Optical studies by UV-Vis spectroscopy shows decrement in transmittance with an increase in ion fluence up to 5 × 10¹² ions/㎠. The red shift is observed both in the direct and indirect band gaps until 5 × 10¹² ions/㎠. The surface topography of the pristine film revealed sheath like structure with randomly distributed spherical nano-particles. The roughness of film decreased and the density of spherical nanoparticles increased upon irradiation. Irradiation improved the conductivity significantly for fluence 5 × 10¹¹ ions/㎠ due to band gap reduction and grain growth.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2002.05a
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• pp.193-197
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• 2002

The tribological properties and van der Waals attractive forces and the thermal stability of films are very important characteristics of highly hydrophobic fluorocarbon (FC) films for the long-term reliability of nano system. The effect of thermal annealing on films and van der Waals attractive forces and friction coefficient of films have been investigate d in this study. It was coated Al wafer which was treated O2 and Ar that ocatfluorocyclobutane ($C_4_{8}$) and Ar were supplied to the CVD chamber in the ratio of 2:3 for deposition of FC Films. Static contact angle and dynamic contact angle were used to characterize FC films. Thickness of films was measured by variable angle spectroscopy ellipsometer (VASE). Nanotribological data was got by atomic force microscopy (AFM) to measure roughness, lateral force microscopy (LFM) to measure friction force, and force vs. distance (FD) curve to evaluate adhesion force. FC films were cured in N2 and vacuum. The film showed the slight changes in its properties after 3 hr annealing. FTIR ATR studies showed the decrease of C-F peak intensity in the spectra as the annealing time increased. A significant decrease of film thickness has been observed. The friction force of Al surface was at least thirty times higher than ones with FC films. The adhesive force of bare Al was greater than 100 nN. After deposit FC films adhesive force was decreased to 40 nN. The adhesive force of films was decreased down to 10 nN after 24 hr annealing. During 24 hr annealing in $N_2$and vacuum at $100^{\circ}C$ film properties were not changed so much.