• Journal of the Korea Institute of Information and Communication Engineering
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• v.12 no.5
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• pp.815-820
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• 2008

Recently the frequency assignment and the technical specifications of UWB systems for communications are completed. Therefore many UWB systems have been developed. In our country $3.1{\sim}4.8GHz$ and $7.2{\sim}10.2GHz$ are assigned for UWB systems for communications. When we consider RF technologies and the easy implementation of UWB systems, UWB systems used in the low band are more developed than high band systems. In this paper we design and implement a BPF for low band UWB systems by means of considering the easy implementation of UWB systems. The designed and implemented BPFs are low band filter and low band channel filters. The measured results of the low band filter show that the filter has 21.85dB and 17.91dB attenuation at 3.1GHz and 4.8GHz, 1.53GHz of -10dB bandwidth and 2dB of insertion loss. Low band can be divided into 3 channels with 500MHz of the channel bandwidth. The channel filter for channel number 1 has the characteristics of 24.85dB attenuation at 3.1GHz, 0.61GHz of -10dB bandwidth and 1.87dB of insertion loss. The filter for channel 3 in low band has 19.2dB of attenuation at 4.8GHz, 0.49GHz of -10dB bandwidth and 2.49dB of insertion loss.

• Journal of electromagnetic engineering and science
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• v.15 no.4
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• pp.232-238
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• 2015

This work describes the development of a D-band (110-170 GHz) signal source based on a SiGe BiCMOS technology. This D-band signal source consists of a V-band (50-75 GHz) oscillator, a V-band amplifier, and a D-band frequency doubler. The V-band signal from the oscillator is amplified for power boost, and then the frequency is doubled for D-band signal generation. The V-band oscillator showed an output power of 2.7 dBm at 67.3 GHz. Including a buffer stage, it had a DC power consumption of 145 mW. The peak gain of the V-band amplifier was 10.9 dB, which was achieved at 64.0 GHz and consumed 110 mW of DC power. The active frequency doubler consumed 60 mW for D-band signal generation. The integrated D-band source exhibited a measured output oscillation frequency of 133.2 GHz with an output power of 3.1 dBm and a phase noise of -107.2 dBc/Hz at 10 MHz offset. The chip size is $900{\times}1,890{\mu}m^2$, including RF and DC pads.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.25 no.3
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• pp.376-379
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• 2014

In this paper, we designed more improving a dual-band power amplifier than the transceiver of RFID reader that operates at 910 MHz and 2.45 GHz. A dual-band power amplifier has two circuits. One matching circuit is composed lumped element in the band of 910 MHz. The other matching circuit using distributed element in the high band of 2.45 GHz. So, this dual-band power amplifier works as Band Rejection Filter in the band of 910 MHz but in the high band of 2.45 GHz works as Band Pass Filter. Therefore, this is composed a microstrip transmission line. A power amplifier is showed gains of 8 dB output power at 910 MHz and 1.5 dB output power at 2.45 GHz. If input power is 10 dBm, both of bands output 20 dBm.

• Journal of the Korean Institute of Telematics and Electronics B
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• v.31B no.5
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• pp.42-49
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• 1994

In this paper we consider efficient 1-D and 2-D linear-phased half-band filter designs. We first introduce a new derivation of the existing Vaidynathan-Nguyen 's half-band filter design method, which verifies that the design provides optimal half-band filters. We then propose an approximately-linear-phased IIR half-band filter design method, which is based on the all-pass equalizer design with the linear phase -$\omega$/2. Finally, we propose an efficient method to design optimal 2-D half-band filters, for which we utilize a 2-D all pass prototype filter of half the order of the desired 2-D half-band filters.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.36 no.12C
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• pp.759-763
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• 2011

In this paper, a dual-band T-shaped microstrip monopole antenna with a pair of slits for 2.4/5.2/5.8-GHz wireless local area networks (WLANs) is proposed. A pair of T-shaped slits is loaded on a T-shaped monopole antenna fed by microstrip line in order to obtain dual-band operation as well as to reduce the antenna size. It is demonstrated from experimental results that the proposed antenna can cover all the required bands for WLAN. The measured impedance bandwidth for VSWR<2 is about 5.7% (2.37-2.51GHz) in the lower frequency band and about 28.8% (4.76-6.35GHz) in the higher frequency band. The measured peak gains are about 1.33 dBi to 1.66 dBi in the 2.4GHz band, 3.50 dBi to 3.95 dBi in the 5.25GHz band, and 2.06 dBi to 2.34 dBi in the 5.8GHz band.

• The Journal of Natural Sciences
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• v.8 no.2
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• pp.147-152
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• 1996

The 2,4-D + BA combination in MS medium showed high regenerating ability and induced compact callus from leaf and petiole segments of three strawberry cultivars, 'Bokyo', 'Suhong', whereas the NAA + BA combination resulted in friable callus. Band of RAPD products obtained with primer 212 from the callus was different from the band of mother plant when callus induced from leaf segment of 'Suhong' cultivar was maintained in MS medium containing NAA or BA for 8 months. The RAPD bands obtained from mother plants of 'Bokyo' and 'Yeobong' were different from that of callus maintained in the presence of MS liquid medium containing 2,4-D(0.2 mg/$\ell$) subcultured every two weeks for 6 months(12 subcultures).

• The Journal of the Korea institute of electronic communication sciences
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• v.16 no.6
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• pp.1053-1058
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• 2021

This paper presents the multi-band mixer which converts a X-, K- and Ka-band adaptively by adjusting the gate-bias voltage of an active device. The proposed mixer presented a conversion loss of -10 dB at -0.8 V gate-bias voltage for X-band, a conversion loss of -9 dB at -0.3 V gate-bias voltage for K-band and for Ka-band, a conversion loss of -7 dB at -0.2 V gate-bias voltage under the LO power of +6.0 dBm. The 1dB compression point (P1dB) is +0.5 dBm for all band.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2015.10a
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• pp.941-944
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• 2015

In this paper study for VSAT(very small aperture terminal) LNB(low noise block). ship LNB was demanded high stability and low noise figure. We designed FEM(Front-End Module) that was operated multi-band. FEM designed was constructed in a multi-band low noise receiver amplifier, a frequency converter, IF amplifier, Voltage Control Oscillator signal generating circuit four circuit using. To convert the multi-band 2.05GHz band, it generates four local oscillator signals, the four(band1, band2, band3, band4) designed to output an IF signal developed conversion apparatus, the conversion gain 64dB, noise figure 1dB or less, output P1dB 15dBm or more, phase noise showed -73dBc@100Hz.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.385-386
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• 2008

In this paper, a simple dual band filter chip is designed with 0603 case size using IPD technology. The dual-band filter achieves high frequency band at 2.5 GHz and low frequency band at 1.8 GHz. The insertion losses in high frequency band and low frequency band are -0.195 dB and -0.146 dB, respectively. The return losses in these bands are -22.7 dB and -22.8 dB, respectively. The simple dual-band filter based on SI-GaAs substrate is designed within die size of about 1.3 $mm^2$.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.45 no.1
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• pp.110-114
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• 2008

In this paper, high efficient class F power amplifier with dual band has been realized. Dual band power amplifier have used modify stub matching for single FET, center frequency 2.14GHz and 5.2GHz respectively. Dual band amplifier is 32.65dBm output power, gain 11dB and PAE 36% at the 2.14GHz, 7dB gain at the 5.2GHz. Design of a dual band class F power amplifier using harmonic control circuit. The measured are 9.9dB gain, 30dBm output power and PAE 55% at the 2.14GHz, 11.7dB gain at the 5.2GHz. This paper is being used the load-pull method and it maximizes output power and it is using the only one transistor in the paper. As a result, this research will obtain a dual band high PAE power amplifier.