• Journal of electromagnetic engineering and science
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• 제4권4호
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• pp.168-174
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• 2004

A bandwidth-enhanced and phase noise-improved differential LC-tank VCO is proposed in this paper. By connecting the varactors to the bases of the cross-coupled transistors of the proposed LC-tank VCO, its input negative resistance has been widened. Also, the feedback capacitor Cc in the cross-coupling path of the proposed LC-tank VCO attenuates the output common-mode level modulated by the low-frequency noise because the modulated common-mode level jitters the varactor bias point and degrades phase noise. Compared with the fabricated conventional LC-tank VCO, the proposed LC-tank VCO demonstrates $200\;\%$ enhancement in tuning range, and 6 - dB improvement in phase noise at 6 MHz offset frequency from 5.4-GHz carrier. We achieved the phase noise of - 106 dBc/Hz at 6 MHz offset, and $10\;\%$ tuning range from the proposed LC-tank VCO. The proposed LC-tank VCO consumes 12 mA at 2.5 V supply voltage.

• 한국광물학회지
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• 제21권2호
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• pp.193-200
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• 2008

배연탈황석고 및 인산부산석고에 함유된 부착수분을 마이크로파에 의한 직접 내부 가열 방법으로 증발시켜 건조하고자 하였다. 700 W, 1,000 W, 1,700 W의 출력인 마그네트론에서 발생된 2.45 GHz의 마이크로파로 배연탈황석고와 인산부산석고를 가열한 결과, 마이크로파 출력의 세기를 700 W에서 1,700 W로 높임에 따라 부착수의 증발시간이 10분에서 3분으로 단축되었고, 이수석고는 베타형 반수석고로 변질되었다. 그러나 베타형 반수석고는 무수석고로 변질되지 않았다.

• 한국전자파학회논문지
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• 제13권5호
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• pp.451-458
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• 2002

6-18 GHz 주파수대역에서 사용되는 흡수형의 SP3T 및 SP8T 스위치 모듈을 설계 및 제작하였다. 스위치 모듈에 사용된 MMIC 칩의 에피구조는 저 손실과 고 전력용으로 설계되었다. 최대입력전력은 SP3T 스위치 모듈이 2 W이고 SP8T 스위치 모듈이 1 W이다. 200 nsec의 고속 스위칭을 위한 구동회로를 모듈에 내장하였다. 모듈의 최대삽입손실은 SP3T 및 SP8T에 대해 각각 2.8 dB, 4.2 dB로 측정되었다. 입ㆍ출력포트간 분리도는 모두 55 dB 이상을 얻을 수 있었다. 두 스위치 모듈은 전자전 시스템에 적용하기 위한 관련 환경시험을 모두 통과하였다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2007년도 심포지엄 논문집 정보 및 제어부문
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• pp.267-269
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• 2007

PLL(Phase Locked Loop) are widely used circuit technique in modern electronic systems. In this paper, We propose the low voltage and high speed PLL. We design the PFD(Phase Frequency Detector) by using TSPC (True Single Phase Clock) circuit to improve the performance and solve the dead-zone problem. We use CP(Charge Pump} and LP(Loop filter) for Negative feedback and current reusing in order to solve current mismatch and switch mismatch problem. The VCO(Voltage controlled Oscillator) with 5-stage differential ring oscillator is used to exact output frequency. The divider is implemented by using D-type flip flops asynchronous dividing. The frequency divider has a constant division ratio 32. The frequency range of VCO has from 200MHz to 1.1GHz and have 1.7GHz/v of voltage gain. The proposed PLL is designed by using 0.18um CMOS processor with 1.8V supply voltage. Oscillator's input frequency is 25MHz, VCO output frequency is 800MHz and lock time is 5us. It is evaluated by using cadence spectra RF tools.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.220-223
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• 2005

We studied the effect of composition, processing, and sintering temperature on the microwave properties of $Mg_{3-x}Co_x(VO_4)_2$ system which is applicable to LTCC. When $Mg_{3-x}Co_x(VO_4)_2$ was fabricated by solid-state reaction process and sintered at the temperature range of $800\sim910^{\circ}C$, it was found that the optimum composition of x was 2 at which microwave properties of 910$^{\circ}C$-sintered one were as follows: $Q\times f_0\sim55,200GHz$ and $\varepsilon_r\sim10$. When $(MgCo_2)(VO_4)_2$ was fabricated by sol-gel process and sintered at 800$^{\circ}C$, $Q\timesf_0$was 34,400GHz which is much high compared to those fabricated by solid-state reaction process at the same sintering temperature.

• 한국전기전자재료학회논문지
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• 제20권8호
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• pp.661-665
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• 2007

This paper presents the electrical properties of SiGe HBTs designed with bottom collector and single metal layer structure for RF power amplifier. Base layer was formed with graded-SiGe/Si structures and the collector place to the bottom of the device. Bottom collector and single metal layer structures could significantly simplify the fabrication process. We studied about the influence of SiGe base thickness, number of emitter fingers and temperature dependence $(<200^{\circ}C)$ on electrical properties. The feasible application in $1{\sim}2GHz$ frequency from measured data $BV_{CEO}{\sim}10V,\;f_T{\sim}14GHz,\;{\beta}{\simeq}110,\;NF{\sim}1dB$ using packaged SiGe HBTs. We will discuss the temperature dependent current flow through the e-b, b-c junctions to understand stability and performance of the device.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.187-187
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• 2007

This paper presents the electrical properties of SiGe HBTs designed with bottom collector and single metal layer structure for RF power amplifier. Base layer was formed with graded-SiGe/Si structures and the collector place to the bottom of the device. Bottom collector and single metal layer structures could significantly simplify the fabrication process. We studied about the influence of SiGe base thickness, number of emitter fingers and temperature dependence (< $200^{\circ}C$) on electrical properties. The feasible application in 1~2GHz frequency from measured data $BV_{CEO}$ ~10V, $f_r$~14 GHz, ${\beta\simeq}110$, NF~1 dB using packaged SiGe HBTs. We will discuss the temperature dependent current flow through the e-b, b-c junctions to understand stability and performance of the device.

• 전기전자학회논문지
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• 제23권1호
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• pp.181-187
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• 2019

In this paper, we demonstrated a power amplifier monolithic microwave integrated circuit (MMIC) for X-band radar applications. It utilizes commercial $0.25{\mu}m$ GaN-based high electron mobility transistor (HEMT) technology and delivers more than 20 W of output power. The developed GaN-based power amplifier MMIC has small signal gain of over 22 dB and saturated output power of over 43.3 dBm (21.38 W) in a pulse operation mode with pulse width of $200{\mu}s$ and duty cycle of 4% over the entire band of 9 to 10 GHz. The chip dimensions are $3.5mm{\times}2.3mm$, generating the output power density of $2.71W/mm^2$. Its power added efficiency (PAE) is 42.6-50.7% in the frequency bandwidth from 9 to 10 GHz. The developed GaN-based power amplifier MMIC is expected to be applied in a variety of X-band radar applications.

• Composites Research
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• 제22권3호
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• pp.55-59
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• 2009

마이크로스트림 안테나는 가볍고 부피가 작을 뿐만 아니라 집적화가 가능하고, 표면 부착력이 탁월하여 많은 통신 시스템 안테나로 응용되고 있다. 안테나의 구조는 12.5GHz의 중심주파수를 갖는 사각 패치 마이크로 스트립 안테나로 설계하였고 곡률 방향으로 패치를 확장시켜 총 4개의 패치를 배열시켰다. 양쪽의 복합재료 사이에 허니컴을 삽입한 샌드위치 구조물이 되도록 설계한 다음 충격 실험을 실시하였다. 충격실험 후 안테나 성능변화를 측정한 결과 영향을 받지 않는다는 것을 확인하였다.

• 천문학논총
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• 제18권1호
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• pp.97-110
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• 2003

WRC-03 was held between 9 June and 4 July 2003 in Geneva, Switzerland. Over 2,200 delegates from 138 ITU Member States attended the Conference. The delegates considered some 2,500 proposals, and over 900 numbered documents related to 50 agenda items. The final output of the Conference consists of 527 pages of new and revised text of the Radio Regulations. This paper provides some details about the outcome of the radio astronomy related issues at the WRC-03 Conference. It is divided into two part: a) Agenda item1.8.2 and b) Agenda item 1.32, related to radio astronomy. Relevant extracts from the Final Acts of WRC-03 are given in the Appendix. Agenda item 1.8.2 was one of the most controversial Agenda Items at WRC-03. Studies were carried out within ITU-R TG 1/7 for the last three years; the results of these studies are summarized in Recommendation ITU-R SM.1633. The Conference adopted a new footnote (5.347A), that calls for the application of Resolution 739 (WRC-03) in the 1452-1492 MHz, 1525-1559 MHz, 1613.8-1626.5 MHz, 2655-2670 MHz, 2670-2690 MHz and 21.4-22.0 GHz bands. Agenda item 1.32 is to consider technical and reglatory provisions concerning the band 37.5-43.5 GHz, in accordance with Resolutions 128 (Rev.WRC-2000) and 84 (WRC-2000). WRC-03 reviewed and adjusted the New footnotes 5.551H and 5.551I cover the protection of radio astronomy observations in the 42.5-43.5 GHz band from unwanted emissions by non-geostationary (5.551H) and geostationary (5.551I) FSS and BSS systems, respectively.