• Journal of the Microelectronics and Packaging Society
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• v.15 no.1
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• pp.39-44
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• 2008

In this paper, fully embedded 2.4GHz WLAN band pass filter (BPF) was investigated into a multi-layered organic packaging substrate using high Q spiral stacked inductors and high Dk MIM capacitors for low cost RF System on Package (SOP) applications. The proposed 2.4GHz WLAN BPF was designed by modifying chebyshev second order filter circuit topology. It was comprised of two parallel LC resonators for obtaining two transmission zeros. It was designed by using 2D circuit and 3D EM simulators for finding out optimal geometries and verifying their applicability. It exhibited an insertion loss of max -1.7dB and return loss of min -l7dB. The two transmission zeros were observed at 1.85 and 6.7GHz, respectively. In the low frequency band of $1.8GHz{\sim}1.9GHz$, the stop band suppression of min -23dB was achieved. In the high frequency band of $4.1GHz{\sim}5.4GHz$, the stop band suppression of min -l8dB was obtained. It was the first embedded and the smallest one of the filters formed into the organic packaging substrate. It has a size of $2.2{\times}1.8{\times}0.77mm^3$.

• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.2
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• pp.301-306
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• 2015

An ultra-compact and wideband low noise amplifier (LNA) in a quad flat non-leaded (QFN) package is presented. The LNA monolithic microwave integrated circuit (MMIC) is implemented in a $0.25{\mu}m$ GaN IC technology on a Silicon Carbide (SiC) substrate provided by Triquint. A source degeneration inductor and a gate inductor are used to obtain the noise and input matching simultaneously. The resistive feedback and inductor peaking techniques are employed to achieve a wideband characteristic. The LNA chip is mounted in the $3{\times}3-mm^2$ QFN package and measured. The supply voltages for the first and second stages are 14 V and 7 V, respectively, and the total current is 70 mA. The highest gain is 13.5 dB around the mid-band, and -3 dB frequencies are observed at 0.7 and 12 GHz. Input and output return losses ($S_{11}$ and $S_{22}$) of less than -10 dB measure from 1 to 12 GHz; there is an absolute bandwidth of 11 GHz and a fractional bandwidth of 169%. Across the bandwidth, the noise figures (NFs) are between 3 and 5 dB, while the output-referred third-order intercept points (OIP3s) are between 26 and 28 dBm. The overall chip size with all bonding pads is $1.1{\times}0.9mm^2$. To the best of our knowledge, this LNA shows the best figure-of-merit (FoM) compared with other published GaN LNAs with the same gate length.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.27 no.3
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• pp.269-276
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• 2016

This paper presents a 2.65 GHz Doherty power amplifier with internally-matched GaN HEMT. Internal matching circuits were adopted to match its harmonic impedances inside the package. Simultaneously, due to the partially matched fundamental impedance, input and output matching networks become simpler. Bond wires and parasitic elements of transistor package were predicted by EM simulation. For the LTE signal with 6.5 dB PAPR, the implemented Doherty power amplifier shows a power gain of 13.0 dB, a saturated output power of 55.4 dBm, an efficiency of 49.1 %, and ACLR of -26.3 dBc at 2.65 GHz with an operating voltage of 48 V.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.28 no.7A
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• pp.563-568
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• 2003

In this paper, a miniaturized parallel coupled bandpass filter using multi-layered LTCC(Low Temperature Co-fired Ceramics) substrate for SOP(System-On-Package) is proposed for applications to wireless communication systems. The fabricated BPF is composed of five 106${\mu}{\textrm}{m}$ thick LTCC layers and its size is 5.24mm x 4.3mm x 0.53 mm. The measured characteristics of the BPF show the center frequency of 5.8GHz, bandwidth of 200MHz, insertion loss of 2.326dB and return loss of 13.679dB. In addition, the attenuation is 28.052dB at 4.7GHz.

• JSTS:Journal of Semiconductor Technology and Science
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• v.4 no.3
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• pp.189-195
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• 2004

A 10 Gb/s limiting amplifier IC with the emitter area of $1.5{\times}10{\mu}m^2$ for optical transmission system was designed and fabricated with a AIGaAs/GaAs HBTs technology. In this stud)', we evaluated fine pitch bump using WL-CSP (Wafer Level-Chip Scale Packaging) instead of conventional wire bonding for interconnection. For this we developed WL-CSP process and formed fine pitch solder bump with the $40{\mu}m$ diameter and $100{\mu}m$ pitch on bonding pad. To study the effect of WL-CSP, electrical performance was measured and analyzed in wafer and package module using WL-CSP. In a package module, clear and wide eye diagram openings were observed and the riselfall times were about 100ps, and the output" oltage swing was limited to $600mV_{p-p}$ with input voltage ranging from 50 to 500m V. The Small signal gains in wafer and package module were 15.56dB and 14.99dB respectively. It was found that the difference of small signal gain in wafer and package module was less then 0.57dB up to 10GHz and the characteristics of return loss was improved by 5dB in package module. This is due to the short interconnection length by WL-CSP. So, WL-CSP process can be used for millimeter wave GaAs MMIC with the fine pitch pad.

• Journal of Advanced Navigation Technology
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• v.5 no.2
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• pp.141-148
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• 2001

This paper describe the development of narrow-band passband filter with small package and low loss, high selectivity performance. This filter is placed between power amplifier and frequency mixer of IMT-2000 mobile equipment. The elliptic-function narrow-band passband filter is designed with new architecture using the microstrip line. This package is very small by $3.2cm{\times}1.25cm$ and have the 3 % 3 dB bandwidth. Also in the passband the insertion loss is about 2.5 dB and is better than older RF SAW filter(insertion loss: 3.2 dB). In the stop-band it has the two deep notch under the -56 dB.

• Current Optics and Photonics
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• v.5 no.2
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• pp.121-128
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• 2021

We propose a novel, tiny optical receiver engine utilizing an all-in-one package based on embedded optics technology. The package's best transmission S21 and reflection S22 opto-electric (OE) bandwidths are 49.8 GHz and 34.9 GHz, respectively, and the reflectance of the optical engine is below -31.7 dB for all channels. The engine satisfies the MIL-STD-883G standard for reliability tests, such as mechanical and thermal shock, and vibration resistance. The sensitivity after 10 km single-mode fiber (SMF) transmission is below -8 dBm. The optical receiver engine is cost-competitive and applicable for 400G coarse wavelength division multiplexing 4 (CWDM4) 10 km optical transceivers.

• Journal of the Korean Society for Precision Engineering
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• v.29 no.5
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• pp.563-571
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• 2012

In 3D integration package using TSV technology, bonding is the core technology for stacking and interconnecting the chips or wafers. During bonding process, however, warpage and high stress are introduced, and will lead to the misalignment problem between two chips being bonded and failure of the chips. In this paper, a finite element approach is used to predict the warpages and stresses during the bonding process. In particular, in-plane deformation which directly affects the bonding misalignment is closely analyzed. Three types of bonding technology, which are Sn-Ag solder bonding, Cu-Cu direct bonding and SiO2 direct bonding, are compared. Numerical analysis indicates that warpage and stress are accumulated and become larger for each bonding step. In-plane deformation is much larger than out-of-plane deformation during bonding process. Cu-Cu bonding shows the largest warpage, while SiO2 direct bonding shows the smallest warpage. For stress, Sn-Ag solder bonding shows the largest stress, while Cu-Cu bonding shows the smallest. The stress is mainly concentrated at the interface between the via hole and silicon chip or via hole and bonding area. Misalignment induced during Cu-Cu and Sn-Ag solder bonding is equal to or larger than the size of via diameter, therefore should be reduced by lowering bonding temperature and proper selection of package materials.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.18 no.5 s.120
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• pp.563-568
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• 2007

In this paper, the proposed package antenna, which is meander line structure with short pin, is miniaturized to realize RF-SoP at 900 MHz RFID band. The RFID BGA(Ball Grid Array) chip is put in a cavity of LTCC Layers. The coupling and cross talk, which are happen between BGA chip and proposed package antenna, are reduced by faraday cage, which consists of ground and via fences, is realized to enhance the isolation between BGA chip and antenna. The proposed antenna structure is focused on the package level antenna realization at low frequency band. The novel proposed package antenna size is $13mm{\times}9mm{\times}3.51mm$. The measured resonance frequency is 0.893 GHz. The impedance bandwidth is 9 MHz. The maximum gain of radiation pattern is -2.36 dBi.

• The Journal of the Korea institute of electronic communication sciences
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• v.2 no.1
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• pp.1-9
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• 2007

In this paper, a third-order harmonic mixer is designed using frequency multiplier theory for the Ka-band. The gate bias voltage is selected by frequency multiplier theory to maximize the third-order harmonic element ofthe fundamental LO frequency in the proposed mixer. The designed mixer has a gate mixer structure composed of a gate terminal input for the fundamental local signal ($f_{LO}$), RF signal (${RF}$) and a drain terminal output for the harmonic frequency ($3f_{LO}-f_{RF}$) respectively. The Ka-band harmonic mixer is designed and fabricated using a commercial GaAs MESFET device with a plastic package. The proposed mixer will provide a solution for the problems found in the high cost, complex circuitry in a conventional Ka-band mixer. The 33.5 GHz harmonic mixer has a -10 dB conversion gain by pumping 11.5 GHz LO with a +5 dBm level.