• 마이크로전자및패키징학회지
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• 제15권1호
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• pp.39-44
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• 2008

In this paper, fully embedded 2.4GHz WLAN band pass filter (BPF) was investigated into a multi-layered organic packaging substrate using high Q spiral stacked inductors and high Dk MIM capacitors for low cost RF System on Package (SOP) applications. The proposed 2.4GHz WLAN BPF was designed by modifying chebyshev second order filter circuit topology. It was comprised of two parallel LC resonators for obtaining two transmission zeros. It was designed by using 2D circuit and 3D EM simulators for finding out optimal geometries and verifying their applicability. It exhibited an insertion loss of max -1.7dB and return loss of min -l7dB. The two transmission zeros were observed at 1.85 and 6.7GHz, respectively. In the low frequency band of $1.8GHz{\sim}1.9GHz$, the stop band suppression of min -23dB was achieved. In the high frequency band of $4.1GHz{\sim}5.4GHz$, the stop band suppression of min -l8dB was obtained. It was the first embedded and the smallest one of the filters formed into the organic packaging substrate. It has a size of $2.2{\times}1.8{\times}0.77mm^3$.

• JSTS:Journal of Semiconductor Technology and Science
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• 제15권2호
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• pp.301-306
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• 2015

An ultra-compact and wideband low noise amplifier (LNA) in a quad flat non-leaded (QFN) package is presented. The LNA monolithic microwave integrated circuit (MMIC) is implemented in a $0.25{\mu}m$ GaN IC technology on a Silicon Carbide (SiC) substrate provided by Triquint. A source degeneration inductor and a gate inductor are used to obtain the noise and input matching simultaneously. The resistive feedback and inductor peaking techniques are employed to achieve a wideband characteristic. The LNA chip is mounted in the $3{\times}3-mm^2$ QFN package and measured. The supply voltages for the first and second stages are 14 V and 7 V, respectively, and the total current is 70 mA. The highest gain is 13.5 dB around the mid-band, and -3 dB frequencies are observed at 0.7 and 12 GHz. Input and output return losses ($S_{11}$ and $S_{22}$) of less than -10 dB measure from 1 to 12 GHz; there is an absolute bandwidth of 11 GHz and a fractional bandwidth of 169%. Across the bandwidth, the noise figures (NFs) are between 3 and 5 dB, while the output-referred third-order intercept points (OIP3s) are between 26 and 28 dBm. The overall chip size with all bonding pads is $1.1{\times}0.9mm^2$. To the best of our knowledge, this LNA shows the best figure-of-merit (FoM) compared with other published GaN LNAs with the same gate length.

• 한국전자파학회논문지
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• 제27권3호
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• pp.269-276
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• 2016

본 논문에서는 내부 정합된 GaN-HEMT를 이용하여 2.65 GHz에서 동작하는 Doherty 전력증폭기를 설계 및 제작하였다. 패키지 내부의 정합회로는 고조파 임피던스를 정합하기 위해 적용되었다. 동시에 기본주파수 임피던스가 부분적으로 정합되기 때문에 입력 및 출력 외부 정합회로는 간단해진다. 트랜지스터 패키지의 본드 와이어와 기생 성분은 EM 시뮬레이션을 통해 예측되었다. Doherty 전력증폭기는 48 V의 동작 전압을 인가하였으며, 6.5 dB의 PAPR을 갖는 LTE 신호에 대해 2.65 GHz에서 13.0 dB의 전력이득, 55.4 dBm의 포화전력, 49.1 %의 효율 및 -26.3 dBc의 ACLR 특성을 얻었다.

• 한국통신학회논문지
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• 제28권7A호
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• pp.563-568
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• 2003

본 논문에서는 무선 통신 시스템의 SOP(System-On-Package)를 위하여 LTCC(Low Temperature Co-fired Ceramic)를 이용하여 다층구조의 초소형 병렬결합 대역통과 여파기를 제안하였다. 제작된 대역통과 여파기는 106 $\mu\textrm{m}$의 두께인 LTCC sheet가 5층으로 구성되었고 크기는 5.24mm x 4.3mm x 0.53mm이다. 측정된 대역통과 여파기는 중심주파수 5.8GHz에서 200MHz의 대역폭을 가지며, 통과대역에서 13.679dB의 반사손실과 2.326dB의 삽입손실, 그리고 4.7GHz에서 28.052dB의 감쇄특성을 갖는다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제4권3호
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• pp.189-195
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• 2004

A 10 Gb/s limiting amplifier IC with the emitter area of $1.5{\times}10{\mu}m^2$ for optical transmission system was designed and fabricated with a AIGaAs/GaAs HBTs technology. In this stud)', we evaluated fine pitch bump using WL-CSP (Wafer Level-Chip Scale Packaging) instead of conventional wire bonding for interconnection. For this we developed WL-CSP process and formed fine pitch solder bump with the $40{\mu}m$ diameter and $100{\mu}m$ pitch on bonding pad. To study the effect of WL-CSP, electrical performance was measured and analyzed in wafer and package module using WL-CSP. In a package module, clear and wide eye diagram openings were observed and the riselfall times were about 100ps, and the output" oltage swing was limited to $600mV_{p-p}$ with input voltage ranging from 50 to 500m V. The Small signal gains in wafer and package module were 15.56dB and 14.99dB respectively. It was found that the difference of small signal gain in wafer and package module was less then 0.57dB up to 10GHz and the characteristics of return loss was improved by 5dB in package module. This is due to the short interconnection length by WL-CSP. So, WL-CSP process can be used for millimeter wave GaAs MMIC with the fine pitch pad.

• 한국항행학회논문지
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• 제5권2호
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• pp.141-148
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• 2001

본 논문에서는 IMT-2000 단말기 송신기의 전력증폭기와 주파수 합성기 사이에 이용되는 통과 대역에서 적은 삽입 손실과 예리한 선택도를 갖는 소형의 고성능 협대역 대역통과 필터를 설계하였다. 설계된 새로운 구조의 마이크로스트립 선을 이용한 타원함수 협대역 대역통과 필터는 소형($3.2cm{\times}1.25cm$)이고, 3dB 대역폭이 3% 되는 특성을 갖고 있다. 또한 통과대역에서 삽입 손실이 2.5 dB 이하로 기존의 RF SAW 필터의 삽입 손실 3.2 dB보다 우수하다는 것을 확인할 수 있었고, 차단 대역에서 -56 dB 이하의 두 개의 깊숙한 노치를 보였다.

• Current Optics and Photonics
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• 제5권2호
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• pp.121-128
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• 2021

We propose a novel, tiny optical receiver engine utilizing an all-in-one package based on embedded optics technology. The package's best transmission S21 and reflection S22 opto-electric (OE) bandwidths are 49.8 GHz and 34.9 GHz, respectively, and the reflectance of the optical engine is below -31.7 dB for all channels. The engine satisfies the MIL-STD-883G standard for reliability tests, such as mechanical and thermal shock, and vibration resistance. The sensitivity after 10 km single-mode fiber (SMF) transmission is below -8 dBm. The optical receiver engine is cost-competitive and applicable for 400G coarse wavelength division multiplexing 4 (CWDM4) 10 km optical transceivers.

• 한국정밀공학회지
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• 제29권5호
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• pp.563-571
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• 2012

In 3D integration package using TSV technology, bonding is the core technology for stacking and interconnecting the chips or wafers. During bonding process, however, warpage and high stress are introduced, and will lead to the misalignment problem between two chips being bonded and failure of the chips. In this paper, a finite element approach is used to predict the warpages and stresses during the bonding process. In particular, in-plane deformation which directly affects the bonding misalignment is closely analyzed. Three types of bonding technology, which are Sn-Ag solder bonding, Cu-Cu direct bonding and SiO2 direct bonding, are compared. Numerical analysis indicates that warpage and stress are accumulated and become larger for each bonding step. In-plane deformation is much larger than out-of-plane deformation during bonding process. Cu-Cu bonding shows the largest warpage, while SiO2 direct bonding shows the smallest warpage. For stress, Sn-Ag solder bonding shows the largest stress, while Cu-Cu bonding shows the smallest. The stress is mainly concentrated at the interface between the via hole and silicon chip or via hole and bonding area. Misalignment induced during Cu-Cu and Sn-Ag solder bonding is equal to or larger than the size of via diameter, therefore should be reduced by lowering bonding temperature and proper selection of package materials.

• 한국전자파학회논문지
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• 제18권5호
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• pp.563-568
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• 2007

본 논문에서 제안된 패키지 안테나는 900 MHz RFID 대역에 적용하기 위하여 미엔더 라인과 단락 핀을 부설하고 LTCC(Low Temperature Cofired Ceramic) 층의 공동 내부에 RFID BGA(Ball Grid Array) 칩을 장착하였다. BGA 칩과 안테나 사이에 발생되는 커플링과 혼신을 감소시키기 위한 격리 특성을 확보하기 위하여 접지면과 비아 펜스를 부설하여 Faraday Cage를 구현하였다. 제안된 안테나는 낮은 주파수 대역에서 패키지 단계의 안테나 구현에 관점을 두었다. 제안된 안테나의 크기는 $13mm{\times}9mm{\times}3.51mm$이며, 측정된 안테나의 공진 주파수는 0.893 GHz, 임피던스 대역폭은 9 MHz, 최대 방사 이득은 -2.36 dBi를 나타내었다.

• 한국전자통신학회논문지
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• 제2권1호
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• pp.1-9
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• 2007

In this paper, a third-order harmonic mixer is designed using frequency multiplier theory for the Ka-band. The gate bias voltage is selected by frequency multiplier theory to maximize the third-order harmonic element ofthe fundamental LO frequency in the proposed mixer. The designed mixer has a gate mixer structure composed of a gate terminal input for the fundamental local signal ($f_{LO}$), RF signal (${RF}$) and a drain terminal output for the harmonic frequency ($3f_{LO}-f_{RF}$) respectively. The Ka-band harmonic mixer is designed and fabricated using a commercial GaAs MESFET device with a plastic package. The proposed mixer will provide a solution for the problems found in the high cost, complex circuitry in a conventional Ka-band mixer. The 33.5 GHz harmonic mixer has a -10 dB conversion gain by pumping 11.5 GHz LO with a +5 dBm level.