• Title/Summary/Keyword: 2.4GHz Bandwidth

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Pilot Case for Container Security Device (CSD) Based on Active RFID

  • Lee, Eun-Kyu;Moon, Young-Sik;Shin, Joong-Jo;Shon, Jung-Rock;Choi, Sung-Pill;Kim, Chae-Soo;Kim, Jae-Joong;Choi, Hyung-Rim
    • Journal of information and communication convergence engineering
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    • v.8 no.2
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    • pp.238-243
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    • 2010
  • CSD is Active RFID based Container Security Device which is proposed by the U.S Department of Home Security. It is mounted inside the container to sense opening of the container door. ConTracer is the CSD which is developed in this research whose major features are sensing door opening status as well as history inquiring on internal environment and shock to the container by mounting the temperature/ humidity/ shock sensors. Moreover, its RFID frequency bandwidth uses 433MHz and 2.4GHz to correspond actively to the frequency used by different countries. This paper introduces the development trend of CSD, compares the ConTracer which is developed thru this research and other company's CSD, and introduces CSD System which is designed and established using ConTracer. Finally, the implemented CSD System is verified by applying the demonstration service to container distribution between Korea and China.

A Wide-range Tunable Wavelength-stabilization Technique for Semiconductor Lasers

  • Chen, Han;Qiao, Qinliang;Min, Jing;He, Cong;Zhang, Yuanyuan
    • Current Optics and Photonics
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    • v.5 no.4
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    • pp.384-390
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    • 2021
  • This paper presents a wide-range tunable wavelength-locking technology based on optoelectronic oscillation (OEO) loops for optical fiber sensors and microwave photonics applications, explains the theoretical fundamentals of the design, and demonstrates a method for locking the relative wavelength differences between a leader semiconductor laser and its follower lasers. The input of the OEO loop in the proposed scheme (the relative wavelength difference) determines the radio-frequency (RF) signal frequency of the oscillation output, which is quantized into an injection current signal for feedback to control the wavelength drift of follower lasers so that they follow the wavelength change of the leader laser. The results from a 10-hour continuous experiment in a field environment show that the wavelength-locking accuracy reached ±0.38 GHz with an Allan deviation of 6.1 pm over 2 hours, and the wavelength jitter between the leader and follower lasers was suppressed within 0.01 nm, even though the test equipment was not isolated from vibrations and the temperature was not controlled. Moreover, the tunable range of wavelength locking was maintained from 10 to 17 nm for nonideal electrical devices with limited bandwidth.

Fabrication of Butt-Coupled SGDBR Laser Integrated with Semiconductor Optical Amplifier Having a Lateral Tapered Waveguide

  • Oh, Su-Hwan;Ko, Hyun-Sung;Kim, Ki-Soo;Lee, Ji-Myon;Lee, Chul-Wook;Kwon, Oh-Kee;Park, Sahng-Gii;Park, Moon-Ho
    • ETRI Journal
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    • v.27 no.5
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    • pp.551-556
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    • 2005
  • We have demonstrated a high-power widely tunable sampled grating distributed Bragg reflector (SGDBR) laser integrated monolithically with a semiconductor optical amplifier (SOA) having a lateral tapered waveguide, which is the first to emit a fiber-coupled output power of more than 10 dBm using a planar buried heterostructure (PBH). The output facet reflectivity of the integrated SOA using a lateral tapered waveguide and two-layer AR coating of $TiO_2\;and\;SiO_2$ was lower than $3\;{\times}\;10^{-4}\;over$ a wide bandwidth of 85 nm. The spectra of 40 channels spaced by 50 GHz within the tuning range of 33 nm were obtained by a precise control of SG and phase control currents. A side-mode suppression ratio of more than 35 dB was obtained in the whole tuning range. Fiber-coupled output power of more than 11 dBm and an output power variation of less than 1 dB were obtained for the whole tuning range.

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CMOS Linear Power Amplifier with Envelope Tracking Operation (Invited Paper)

  • Park, Byungjoon;Kim, Jooseung;Cho, Yunsung;Jin, Sangsu;Kang, Daehyun;Kim, Bumman
    • Journal of electromagnetic engineering and science
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    • v.14 no.1
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    • pp.1-8
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    • 2014
  • A differential-cascode CMOS power amplifier (PA) with a supply modulator for envelope tracking (ET) has been implemented by 0.18 ${\mu}m$ RF CMOS technology. The loss at the output is minimized by implementing the output transformer on a FR-4 printed circuit board (PCB). The CMOS PA utilizes the $2^{nd}$ harmonic short at the input to enhance the linearity. The measurement was done by the 10MHz bandwidth 16QAM 6.88 dB peak-to-average power ratio long-term evolution (LTE) signal at 1.85 GHz. The ET operation of the CMOS PA with the supply modulator enhances the power-added efficiency (PAE) by 2.5, to 10% over the stand-alone CMOS PA for the LTE signal. The ET PA achieves a PAE of 36.5% and an $ACLR_{E-UTRA}$ of -32.7 dBc at an average output power of 27 dBm.

A Multiphase Compensation Method with Dynamic Element Matching Technique in Σ-Δ Fractional-N Frequency Synthesizers

  • Chen, Zuow-Zun;Lee, Tai-Cheng
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.8 no.3
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    • pp.179-192
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    • 2008
  • A multiphase compensation method with mismatch linearization technique, is presented and demonstrated in a $\Sigma-\Delta$ fractional-N frequency synthesizer. An on-chip delay-locked loop (DLL) and a proposed delay line structure are constructed to provide multiphase compensation on $\Sigma-\Delta$ quantizetion noise. In the delay line structure, dynamic element matching (DEM) techniques are employed for mismatch linearization. The proposed $\Sigma-\Delta$ fractional-N frequency synthesizer is fabricated in a $0.18-{\mu}m$ CMOS technology with 2.14-GHz output frequency and 4-Hz resolution. The die size is 0.92 mm$\times$1.15 mm, and it consumes 27.2 mW. In-band phase noise of -82 dBc/Hz at 10 kHz offset and out-of-band phase noise of -103 dBc/Hz at 1 MHz offset are measured with a loop bandwidth of 200 kHz. The settling time is shorter than $25{\mu}s$.

A New Design Approach for Asymmetric Coupled-Section Marchand Balun

  • Park, Ji An;Cho, Choon Sik;Lee, Jae Wook
    • Journal of electromagnetic engineering and science
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    • v.14 no.2
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    • pp.54-60
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    • 2014
  • A systematic design for asymmetric coupled-section Marchand baluns is presented. Asymmetrically coupled transmission lines in multilayer configuration are exploited for constructing Marchand baluns. Design equations for characteristic impedance and electrical length of asymmetrical coupled transmission lines are derived for establishing a systematic design procedure. Novel Marchand balun based on these design equations is composed of two identical asymmetrical coupled transmission lines. However, contrary to the general conventional design approach where ranges for characteristic impedances of coupled lines are ambiguously capitalized, values for characteristic impedance and length are explicitly expressed. Our approach is fundamentally different from the design method using coupling coefficients where solution for coupling coefficient is inherently restricted. To verify the proposed method, one design example is performed for wideband Marchand balun in multilayer configuration, and is fabricated for verifying the design procedure proposed. Maintaining the return loss more than 10 dB, the bandwidth is measured from 0.43 to 1.0 GHz, where $S_{21}$ and $S_{31}$ show better than -4 dB. The measured phase and amplitude imbalances illustrate 0.5 dB and ${\pm}5^{\circ}$, respectively.

3-Dimensinal Microstrip Patch Antenna for Miniaturization (소형화를 위한 3차원 구조마이크로스트립 패치 안테나)

  • 송무하;우종명
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.14 no.2
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    • pp.157-167
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    • 2003
  • In this paper, to reduce the resonant length of patch, microstrip patch antenna of linear polarization which is suppressed at two radiation edges is designed and fabricated at the frequency of 1.575 GHz. The result is like that the resonant length of patch is 45 mm and the length reduction effect is 43.8 % when it is compared with that(80 mm) of plane type. The gain is 4.4 dBd and -3 dB beamwidths are 112$^{\circ}$ and 66$^{\circ}$ in the E-plane and H-plane, respectively. Also, to reduce the size of patch, microstrip patch antennas those are suppressed at four radiating comers are designed and fabricated at the same frequency in the linear and circular polarization, respectively. For linear polarization, at the 1.2 of width/length(W/L) ratio, the patch area is 53 mm $\times$ 63.6 mm and the size reduction effect is 56.1 % when compared with that(80 mm $\times$ 96 mm) of plane type. The gain is 4.3 dBd and the -3 dB beamwidths are 120$^{\circ}$ and 78$^{\circ}$ in the E-plane and H-plane, respectively. For circular polarization, the patch size(54.2 mm $\times$ 61.5 mm) is reduced by 47.2 % than that(76 mm $\times$ 83 mm) of plane type. -3 dB beamwidth of horizontal polarization in the z-x plane and vortical polarization in the y-z plane are 108$^{\circ}$ and 93$^{\circ}$, respectively and this means the increasement in both planes by 52$^{\circ}$ and 27$^{\circ}$ than those of plane type. The maximum gain is 2.5 dBd in the horizontal polarization in the z-x plane. Axial ratio is 1.5 dB at 1.575 GHz and the 2 dB axial ratio bandwidth(ARBW) is 20 MHz(1.3 %).

Design of Dual-Polarization Antenna with High Cross-Polarization Discrimination (높은 교차편파 분리도를 가지는 이중편파 안테나 설계)

  • Lee, Sang-Ho;Oh, Taeck-Keun;Ha, Jung-Je;Lee, Yong-Shik
    • The Journal of Korea Institute of Information, Electronics, and Communication Technology
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    • v.10 no.3
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    • pp.199-205
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    • 2017
  • In a small cell base station used in densely populated areas, a dual polarized multiple antenna(MIMO) is mainly used to increase the cell capacity. This paper demonstrates a dual-polarization antenna with high cross-polarization discrimination(XPD) that can improve the capacity of a small cell using a dual polarization multiple antenna (MIMO). By using the symmetric structure and differential feeding, high XPD in all directions is achieved. In addition, a very similar radiation pattern is observed between each polarization. Because of high XPD and similar radiation pattern in all directions, proposed antenna is well adopted for small-cell multiple-input multiple-output(MIMO) system. Experimental results shows that the proposed antenna has a bandwidth of 180 MHz (2.51~2.7 GHz), a maximum gain of 4.5 dBi (3.5~4.5 dBi), and a half-power beam width of 85 degrees. In addition, average XPD of 26.4 dB in all directions, more than 13.8 dB increase than previous dual-polarization antennas which use single emitter by using different feeding or selectively use polarization through switching.

Leg Fracture Recovery Monitoring Simulation using Dual T-type Defective Microstrip Patch Antenna (쌍 T-형 결함 마이크로스트립 패치 안테나를 활용한 다리 골절 회복 모니터링 모의실험)

  • Byung-Mun Kim;Lee-Ho Yun;Sang-Min Lee;Yeon-Taek Park;Jae-Pyo Hong
    • The Journal of the Korea institute of electronic communication sciences
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    • v.18 no.4
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    • pp.587-594
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    • 2023
  • In this paper, we present the design and optimization process of an on-body microstrip patch antenna with a paired T-type defect for monitoring fracture recovery of human legs. This antenna is designed to be light, thin and compact despite the improvement of return loss and bandwidth performance by adjusting the size of the T-type defect. The structure around the applied human leg is structured as a 5-layer dielectric plane, and the complex dielectric constant of each layer is calculated using the 4-pole Cole-Cole model parameters. In a normal case without bone fracture, the return loss of the on-body antenna is -66.71dB at 4.0196GHz, and the return loss difference ΔS11 is 37.95dB when the gallus layer have a length of 10.0mm, width of 1.0mme, and height of 2.0mm. A 3'rd degree polynomial is presented to predict the height of the gallus layer for the change in return loss, and the polynomial has a very high prediction suitability as RSS = 1.4751, R2 = 0.9988246, P-value = 0.0001841.

A 3.1 to 5 GHz CMOS Transceiver for DS-UWB Systems

  • Park, Bong-Hyuk;Lee, Kyung-Ai;Hong, Song-Cheol;Choi, Sang-Sung
    • ETRI Journal
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    • v.29 no.4
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    • pp.421-429
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    • 2007
  • This paper presents a direct-conversion CMOS transceiver for fully digital DS-UWB systems. The transceiver includes all of the radio building blocks, such as a T/R switch, a low noise amplifier, an I/Q demodulator, a low pass filter, a variable gain amplifier as a receiver, the same receiver blocks as a transmitter including a phase-locked loop (PLL), and a voltage controlled oscillator (VCO). A single-ended-to-differential converter is implemented in the down-conversion mixer and a differential-to-single-ended converter is implemented in the driver amplifier stage. The chip is fabricated on a 9.0 $mm^2$ die using standard 0.18 ${\mu}m$ CMOS technology and a 64-pin MicroLead Frame package. Experimental results show the total current consumption is 143 mA including the PLL and VCO. The chip has a 3.5 dB receiver gain flatness at the 660 MHz bandwidth. These results indicate that the architecture and circuits are adaptable to the implementation of a wideband, low-power, and high-speed wireless personal area network.

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