• Journal of Advanced Navigation Technology
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• v.21 no.2
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• pp.193-199
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• 2017

In the paper, a dual band-notched monopole antenna is proposed for 2.4 GHz WLAN (2.4 ~ 2.484 GHz) and UWB (3.1 ~ 10.6 GHz) applications. The 3.5 GHz WiMAX band notched characteristic is achived by a pair of L-shaped slots instead of the previous U-shaped slot on the center of the radiating patch, whereas the 7.5 GHz band notched characteristic is achived by C-shaped strip resonator placed near to the microstrip feed line. The measured impedance bandwidth (${\mid}S_{11}{\mid}{\leq}-10dB$) is 8.62 GHz (2.38 ~ 11 GHz) which is sufficient to cover 2.4 GHz WLAN and UWB band, while measured band-notched bandwidths for 3.5 GHz WiMAX and 7.5 GHz bnad are 1.13 GHz (3.15 ~ 4.28 GHz) and 800 MHz (7.2 ~ 8 GHz) respectively. In particular, it has been observed that antenna has a good omnidirectional radiation patterns and higher gain of 2.51 ~ 6.81 dBi over the entire frequency band of interest.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.44 no.8
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• pp.42-50
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• 2007

This paper presents design methods for dual-frequency(2.4/5.8GHz) active receiving antennas. The proposed active receiving antennas are designed to interconnect the output port of a wideband antenna to the input port of an active device of High Electron Mobility Transistor directly and to receive RF signals of 2.4GHz and 5.2GHz simultaneously where the impedance matching conditions are optimized by adjusting the length of $1/20{\lambda}_0$(@5.8GHz) CPW transmission line in the planar antenna The bandwidth of implemented dual-frequency active receiving antennas is measured in the range of 2.0GHz to 3.1GHz and 5.25GHz to 5.9GHz. Gains are measured of 17.0dB at 2.4GHz and 15.0dB at 5.2GHz. The measured noise figure is 1.5dB at operating frequencies.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.5
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• pp.650-656
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• 2016

Voltage controlled oscillator (VCO) is widely used circuit component in high-performance microprocessors and modern communication systems as a frequency source. In present work, VCO designs using the different combination of NAND gates with three transistors and CMOS inverter are reported. Three, five and seven stages ring VCO circuits are designed. Coarse and fine tuning have been done using two different supply sources. The frequency with coarse tuning varies from 3.31 GHz to 5.60 GHz in three stages, 1.77 GHz to 3.26 GHz in five stages and 1.27 GHz to 2.32 GHz in seven stages VCO respectively. Moreover, for fine tuning frequency varies from 3.70 GHz to 3.94 GHz in three stages, 2.04 GHz to 2.18 GHz in five stages and 1.43 GHz to 1.58 GHz in seven stages VCO respectively. Results of power consumption and phase noise for the VCO circuits are also been reported. Results of proposed VCO circuits have been compared with previously reported circuits and present circuit approach show significant improvement.

• Journal of the Korean Magnetics Society
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• v.11 no.3
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• pp.109-113
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• 2001

Presently, an inductor adapted at MMIC (Monolithic Microwave Integrated Circuit) which is used for cellular phone or PHS operates at quasi-microwave range over 800 MHz. However, a W-CDMA (Wideband Code Division Multiple Access) will use about 2 GHz range. Therefore magnetic film device should be compatible up to 2 GHz. We have deposited Co-Pd-Al-O system film using rf sputtering method which is expected up to 2 GHz, and investigated the effect of Pd content and magnetic field annealing. When Pd composition is 19%, Hk was 118 Oe, and ${\mu}$′showed flat frequency characteristics up to 1.5 GHz. The Q factor (=${\mu}$′/${\mu}$") was 23.3 at 1 GHz, 6.7 at 1.5 GHz and 1.5 at 2 GHz, respectively. Resonance frequency was 2 GHz. Therefore Co-Pd-Al-O thin film could be used at over 1 GHz, and also expected as an inductor material for wide band CDMA type cellular phone.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.17 no.5 s.108
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• pp.423-429
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• 2006

This paper deals with research for development of electromagnetic wave absorbers in sheet type for mobile phones. By controlling the sendust ratio, the $Al(OH)_3$ coating, the thickness, the kind of binders, and the milling time, electromagnetic wave absorbers were prepared and examined. Central frequency shills toward lower 2.2 GHz, 1.29 GHz, 842 MHz with increasing thickness 1 mm, 2 mm, 3 mm of the absorber, and absorption ability controlled each 2.2 GHz to 1.91 GHz, 1.29 GHz to 801 MHz, 842 MH2 to 801 MHz adjust sendust amount from 80 wt% to 85 wt%. The absorption band of the electromagnetic wave absorber coated with $Al(OH)_3$ becomes larger than that of non-coated one. Sendust composite microwave absorbers mixed with CPE were prepared at $70^{\circ}C$ in temperature. The fabricated electromagnetic wave absorbers show a reflection coefficient 5.76 dB at 1.8 GHz in thickness of 0.85 mm.

• Journal of Advanced Navigation Technology
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• v.26 no.1
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• pp.29-34
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• 2022

In this paper, the design of a triple dipole quasi-yagi antenna operating in the 2.45 GHz and 5 GHz wireless LAN frequency bands and the 3.5 GHz WiMAX frequency band was studied. The proposed quasi-Yagi antenna consists of three dipoles connected in series with a V-shaped ground plane. The longest half-bow-tie-shaped dipole resonates in the 2.45 GHz band, whereas the medium-length dipole resonates at 3.5 GHz. The shortest dipole resonates in the 5 GHz band. By adjusting the length and width of the dipoles and the spacings between the dipoles, a triple-band directional antenna operating in the 2.45 GHz, 3.5 GHz, and 5 GHz bands are designed, and fabricated on an FR4 substrate with a size of 45 mm × 55 mm. It was confirmed that the fabricated antenna operates in the designed triple bands of 2.32-2.57 GHz, 3.26-3.69 GHz, and 4.50-6.56 GHz for a voltage standing wave ratio less than 2. Gain is maintained above 3 dBi in the three bands.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.12 no.9
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• pp.4101-4106
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• 2011

In this study, we propose that the structures of 2-layer spiral planar inductors have a lower spiral coil and via increasing inductance in limited possession are and confirm the frequency characteristics. The structures of inductors have Si thickness of $300{\mu}m$, $SiO_2$ thickness of $7{\mu}m$. The width of Cu coils and the space between segments have $20{\mu}m$, respectively. The number of turns of coils have 3. The performance of spiral planar inductors was simulated to frequency characteristics for inductance, quality-factor, SRF(Self- Resonance Frequency) using HFSS. The 2-layer spiral planar inductors have inductance of 3.2nH over the frequency range of 0.8 to 1.8 GHz, quality-factor of maximum 8.2 at 2.5 GHz, SRF of 5.8 GHz. Otherwise, 1-layer spiral planar inductors have inductance of 1.5nH over the frequency range of 0.8 to 1.8 GHz, quality-factor of maximum 18 at 8 GHz, SRF of 19.2 GHz.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.12 no.5
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• pp.815-820
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• 2008

Recently the frequency assignment and the technical specifications of UWB systems for communications are completed. Therefore many UWB systems have been developed. In our country $3.1{\sim}4.8GHz$ and $7.2{\sim}10.2GHz$ are assigned for UWB systems for communications. When we consider RF technologies and the easy implementation of UWB systems, UWB systems used in the low band are more developed than high band systems. In this paper we design and implement a BPF for low band UWB systems by means of considering the easy implementation of UWB systems. The designed and implemented BPFs are low band filter and low band channel filters. The measured results of the low band filter show that the filter has 21.85dB and 17.91dB attenuation at 3.1GHz and 4.8GHz, 1.53GHz of -10dB bandwidth and 2dB of insertion loss. Low band can be divided into 3 channels with 500MHz of the channel bandwidth. The channel filter for channel number 1 has the characteristics of 24.85dB attenuation at 3.1GHz, 0.61GHz of -10dB bandwidth and 1.87dB of insertion loss. The filter for channel 3 in low band has 19.2dB of attenuation at 4.8GHz, 0.49GHz of -10dB bandwidth and 2.49dB of insertion loss.

• Journal of IKEEE
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• v.11 no.1 s.20
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• pp.15-23
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• 2007

This paper describes a dual frequency synthesizer designed in a 0.2$\mu$m CMOS technology for wireless LAN applications. The design is focused mainly on low-power characteristics. Power dissipation is minimized especially in VCO and prescaler design. The designed synthesizer includes all building blocks for elimination of external components, other than the crystal. Its operating frequency can be programmed by external data. It operates in the frequency range of 2.3GHz to 2.7GHz (RF) and 250MHz to 800MHz (IF) and consumes 5.14mA at 2.5GHz and 1.08mA at 0.5GHz from a 2.5V supply. The measured phase noise is -85dBc/Hz in-band and -105dBc/Hz at 1MHz offset at IF band. The die area is 1.7mm$\times$1.7mm.

• ETRI Journal
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• v.35 no.2
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• pp.177-187
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• 2013

In this paper, we propose a dual-band multiple-input multiple-output (MIMO) antenna with high isolation for WLAN applications (2.45 GHz and 5.2 GHz). The proposed antenna is composed of a mobile communication terminal board, eight radiators, a coaxial feed line, and slots for isolation. The measured -10 dB impedance bandwidths are 10.1% (2.35 GHz to 2.6 GHz) and 3.85% (5.1 GHz to 5.3 GHz) at each frequency band. The proposed four-element MIMO antenna has an isolation of better than 35 dB at 2.45 GHz and 45 dB at 5.2 GHz between each element. The antenna gain is 3.2 dBi at 2.45 GHz and 4.2 dBi at 5.2 GHz.