• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.10
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• pp.41-50
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• 1993

This paper describes the fabrication process and electrical characteristics of PSA (Polysilicon Self-Align) bipolar transistors with a thin base width of 1100.angs.. To realize this shallow junction depth, one-step rapid thermal annealing(RTA) technology has been applied instead of conventional furnace annealing process. It has been shown that the series resistances and parasitic capacitances are significantly reduced in the device with emitter area of 1${\times}4{\mu}m^{2}$. The switching speed of 2.4ns/gate was obtained by measuring the minimum propagation delay time in the I$^{2}$L ring oscillator with 31 stages.

• Journal of the Korean Society of Industry Convergence
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• v.27 no.2_2
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• pp.467-473
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• 2024

Metaheuristics' impact is profound across many fields, yet domestic financial portfolio optimization research falls short, particularly in asset allocation. This study delves into metaheuristics for portfolio optimization, examining theoretical and practical benefits. Findings indicate portfolios optimized via metaheuristics outperform the Dow Jones Index in Sharpe ratios, underscoring their potential to enhance risk-adjusted returns significantly. Tabu search, in comparison to Simulated Annealing, demonstrates superior performance by efficiently navigating the search space. Despite these advancements, practical application remains challenging due to the complexities in metaheuristic implementation. The study advocates for broader algorithmic exploration, including population-based metaheuristics, to refine asset allocation strategies further. This research marks a step towards optimizing portfolios from an extensive array of financial assets, aiming for maximum efficacy in investment outcomes.

• Journal of the Microelectronics and Packaging Society
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• v.16 no.3
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• pp.31-37
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• 2009

Cu-Cu thermo-compression bonding process was successfully developed as functions of the $N_2+H_2$ forming gas annealing conditions before and after bonding step in order to find the low temperature bonding conditions of 3-D integrated technology where the quantitative interfacial adhesion energy was measured by 4-point bending test. While the pre-annealing with $N_2+H_2$ gas below $200^{\circ}C$ is not effective to improve the interfacial adhesion energy at bonding temperature of $300^{\circ}C$, the interfacial adhesion energy increased over 3 times due to post-annealing over $250^{\circ}C$ after bonding at $300^{\circ}C$, which is ascribed to the effective removal of native surface oxide after post-annealing treatment.

• 한국초전도학회:학술대회논문집
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• v.10
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• pp.146-150
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• 2000

Two methods have been investigated to fabricate good quality step-edge Josephson junctions on STO, MgO, and LAO single crystal substrates. One is the annealing of substrates at 1050$^{\circ}$C in 1 atmospheric oxygen after Ar-ion milling. The other is the cleaning of step-edge by using Ar ion milling. The step-edge is characterized with atomic force microscope (AFM) images. And YBCO thin films are deposited by using pulsed laser. The I-V properties of step-edge junctions are characterized. The yield rate of step-edge junction is increased by new fabrication methods.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.289.2-289.2
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• 2016

In-Ga-Zn-O(IGZO) receive great attention as a channel material for thin film transistors(TFTs) as next-generation display panel backplanes due to its superior electrical and physical properties such as a high mobility, low off-current, high sub-threshold slope, flexibility, and optical transparency. For the purpose of fabricating high performance IGZO TFTs, a thermal recovery process above a temperature of $300^{\circ}C$ is required for recovery or rearrangement of the ionic bonding structure. However diffused metal atoms from source/drain(S/D) electrodes increase the channel conductivity through the oxidation of diffused atoms and reduction of $In_2O_3$ during the thermal recovery process. Threshold voltage ($V_{TH}$) shift, one of the electrical instability, restricts actual applications of IGZO TFTs. Therefore, additional investigation of the electrical stability of IGZO TFTs is required. In this paper, we demonstrate the effect of Ti diffusion and modulation of interface traps by carrying out an annealing process on IGZO. In order to investigate the effect of diffused Ti atoms from the S/D electrode, we use secondary ion mass spectroscopy (SIMS), X-ray photoelectron spectroscopy, HSC chemistry simulation, and electrical measurements. By thermal annealing process, we demonstrate VTH shift as a function of the channel length and the gate stress. Furthermore, we enhance the electrical stability of the IGZO TFTs through a second thermal annealing process performed at temperature $50^{\circ}C$ lower than the first annealing step to diffuse Ti atoms in the lateral direction with minimal effects on the channel conductivity.

• Progress in Superconductivity and Cryogenics
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• v.8 no.4
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• pp.12-14
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• 2006

YBCO coated conductors have been fabricated by the reel-to-reel processing using TFA-MOD method. In this work, the fluorine-free Y & Cu precursor solution was synthesized to shorten the calcining time by reducing the evolution of HF gas, thus the meter-long YBCO precursor films can be made within few hours by the continuous slot-die coating & calcination step using the F-free Y & Cu precursor solution. The annealing step was followed to make the YBCO films by the reel-to-reel method with the vertical gas flow system onto the moving tape. To increase the growth rate of the YBCO films by enhancing the removal of HF gas, the low total pressure was adopted in the annealing processing. And the water partial pressure and the oxygen partial pressure were varied to optimize the growth conditions of the MOD-YBCO films on the buffered metal tape. FE-SEM and XRD were used to investigate the surface morphologies and the texture of the meter-long YBCO films. The end-to-end critical current $(I_c)$ of 63A/cm-width and the critical current density $(J_c)$of $0.9MA/cm^2$ with the thickness of $0.7{\mu}m$ were obtained in the 0.42m long coated conductor.

• Bulletin of the Korean Chemical Society
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• v.34 no.5
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• pp.1361-1365
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• 2013

The smallest ketenimine and hydrogen cyanide N-methylide ($CH_2CNH$ and $CH_2NCH$) are provided from the argon/acetonitrile matrix samples exposed to radiation from laser ablation of transition-metals. New infrared bands are observed in addition to better determination of the vibrational characteristics for the previously reported bands, and the $^{13}C$ substituted isotopomers ($^{13}{CH_2}^{13}CNH$ and $^{13}CH_2N^{13}CH$) are also generated. Density functional frequency calculations and the D and $^{13}C$ isotopic shifts substantiate the vibrational assignments. $CH_2CNH$ is probably produced through single-step conversion of $CH_3CN$, whereas $CH_2NCH$ through two-step conversion via 2H-azirine. Inter-conversions between these two products evidently do not occur during photolysis and annealing.

• Journal of the Korean Vacuum Society
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• v.12 no.S1
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• pp.56-59
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• 2003

Wurtzite GaN films are grown by low-pressure MOCVD on (0001)-plane sapphire substrates. The GaN films have a total thickness of 4 $\mu$m with a surface Mg-doped p-type layer, which has a thickness of 0.5 $\mu$m. 90k eV $Mn^{+}$ ions are implanted into the GaN films at room temperature with doses ranging from $1 \times10^{15}$ to $1 \times 10^{16}\textrm{cm}^{-2}$. After an annealing step at $770^{\circ}C$ in flowing $N_2$, the structural characteristics of the $Mn^{+}$ implanted GaN films are studied by X-ray diffraction (XRD), Rutherford backscattering spectrometry (RBS) and atomic force microscopy (AFM). The structural and morphological changes brought about by $Mn^{+}$ implantation and annealing are characterized.

• Journal of Magnetics
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• v.6 no.3
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• pp.86-89
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• 2001

Microstructure modifications are investigated for annealed Co-based amorphous ribbon in vacuum and open air. X-ray diffraction (XRD) spectra for annealed sample in vacuum indicate atomic arrangements with initial nucleation of hcp-Co crystallite at 38$0^{\circ}C$ annealing temperature. However, the XRD spectra in samples with long annealing times of $t_a\geq300$ min demonstrate sharp and good developed surface crystalline hcp-, fcc- Co and $Co_2$Si phases. The giant magnetoimpedance (GMI) profile at 0.1 MHz displaying one-peak behavior in vacuum annealed samples at T = 38$0^{\circ}C$ irrespective of annealing time $t_a$ from 20 to 480 mim. For the annealed samples in an open air, the GMI profile shows two-peaks for $t_a$ = 20 min annealed sample. However, one of peaks disappears and an asymmetric GMI profile exhibits a drastic step-like change near zero field for $t_a\geq300$min. Such asymmetric GMI characteristics is related to the surface microstructures of fcc-Co, hop-Co and $Co_2$Si crystalline phases.

• Progress in Medical Physics
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• v.13 no.4
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• pp.181-186
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• 2002

The IMRT planning depends on the algorithm of each planning system and MLC performance of each Linac system. Yonsei Cancer Center introduced an IMRT System at the beginning of February, 2002. The system consists of CORVUS (Nomos, U.S.A.) treatment planning system, LANTIS, PRIMEVIEW and PRIMART (Siemens, U.S.A) linac system. The optimization of CORVUS planning system with PRIMART is an important task to make a desirable quality treatment plan. Our Step ＆ Shoot IMRT system uses Finite Size Pencil Beams (FSPB) dose model, simulated annealing optimization algorithm and IMFAST segmentation algorithm. We constructed treatment plans for four different patient cases with two basic beamlet sizes, 1.0$\times$1.0 $\textrm{cm}^2$ and 0.5$\times$1.0 $\textrm{cm}^2$, and four intensity steps, 5%, 10%, 20%, 33%. Each case's plan was evaluated with the dose volume histograms of target volumes and delivery efficiencies. The patient case of small target volume is sensitive at the change of intensity map's segmentation and it highlighted an effective treatment plan at marrow intensity step and small basic projection beamlet.