• 전자공학회논문지A
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• 제30A권10호
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• pp.41-50
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• 1993

This paper describes the fabrication process and electrical characteristics of PSA (Polysilicon Self-Align) bipolar transistors with a thin base width of 1100.angs.. To realize this shallow junction depth, one-step rapid thermal annealing(RTA) technology has been applied instead of conventional furnace annealing process. It has been shown that the series resistances and parasitic capacitances are significantly reduced in the device with emitter area of 1${\times}4{\mu}m^{2}$. The switching speed of 2.4ns/gate was obtained by measuring the minimum propagation delay time in the I$^{2}$L ring oscillator with 31 stages.

• 한국산업융합학회 논문집
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• 제27권2_2호
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• pp.467-473
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• 2024

Metaheuristics' impact is profound across many fields, yet domestic financial portfolio optimization research falls short, particularly in asset allocation. This study delves into metaheuristics for portfolio optimization, examining theoretical and practical benefits. Findings indicate portfolios optimized via metaheuristics outperform the Dow Jones Index in Sharpe ratios, underscoring their potential to enhance risk-adjusted returns significantly. Tabu search, in comparison to Simulated Annealing, demonstrates superior performance by efficiently navigating the search space. Despite these advancements, practical application remains challenging due to the complexities in metaheuristic implementation. The study advocates for broader algorithmic exploration, including population-based metaheuristics, to refine asset allocation strategies further. This research marks a step towards optimizing portfolios from an extensive array of financial assets, aiming for maximum efficacy in investment outcomes.

• 한국초전도학회:학술대회논문집
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• 한국초전도학회 2000년도 High Temperature Superconductivity Vol.X
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• pp.146-150
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• 2000

Two methods have been investigated to fabricate good quality step-edge Josephson junctions on STO, MgO, and LAO single crystal substrates. One is the annealing of substrates at 1050$^{\circ}$C in 1 atmospheric oxygen after Ar-ion milling. The other is the cleaning of step-edge by using Ar ion milling. The step-edge is characterized with atomic force microscope (AFM) images. And YBCO thin films are deposited by using pulsed laser. The I-V properties of step-edge junctions are characterized. The yield rate of step-edge junction is increased by new fabrication methods.

• 마이크로전자및패키징학회지
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• 제16권3호
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• pp.31-37
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• 2009

3차원 소자 집적을 위한 저온접합 공정 개발을 위해 Cu-Cu 열 압착 접합을 $300^{\circ}C$에서 30분간 실시하고 $N_2+H_2$, $N_2$분위기에서 전 후속 열처리 효과에 따른 정량적인 계면접착에너지를 4점굽힘시험법을 통해 평가하였다. 전 열처리는 100, $200^{\circ}C$의 $N_2+H_2$ 가스 분위기에서 각각 15분간 처리하였고, 계면접착에너지는 2.58, 2.41, 2.79 $J/m^2$로 전 열처리 전 후에 따른 변화가 없었다. 하지만 250, $300^{\circ}C$의 $N_2$ 분위기에서 1시간씩 후속 열처리 결과 2.79, 8.87, 12.17 $J/m^2$으로 Cu 접합부의 계면접착에너지가 3배 이상 향상된 결과를 얻을 수 있었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.289.2-289.2
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• 2016

In-Ga-Zn-O(IGZO) receive great attention as a channel material for thin film transistors(TFTs) as next-generation display panel backplanes due to its superior electrical and physical properties such as a high mobility, low off-current, high sub-threshold slope, flexibility, and optical transparency. For the purpose of fabricating high performance IGZO TFTs, a thermal recovery process above a temperature of $300^{\circ}C$ is required for recovery or rearrangement of the ionic bonding structure. However diffused metal atoms from source/drain(S/D) electrodes increase the channel conductivity through the oxidation of diffused atoms and reduction of $In_2O_3$ during the thermal recovery process. Threshold voltage ($V_{TH}$) shift, one of the electrical instability, restricts actual applications of IGZO TFTs. Therefore, additional investigation of the electrical stability of IGZO TFTs is required. In this paper, we demonstrate the effect of Ti diffusion and modulation of interface traps by carrying out an annealing process on IGZO. In order to investigate the effect of diffused Ti atoms from the S/D electrode, we use secondary ion mass spectroscopy (SIMS), X-ray photoelectron spectroscopy, HSC chemistry simulation, and electrical measurements. By thermal annealing process, we demonstrate VTH shift as a function of the channel length and the gate stress. Furthermore, we enhance the electrical stability of the IGZO TFTs through a second thermal annealing process performed at temperature $50^{\circ}C$ lower than the first annealing step to diffuse Ti atoms in the lateral direction with minimal effects on the channel conductivity.

• 한국초전도ㆍ저온공학회논문지
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• 제8권4호
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• pp.12-14
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• 2006

YBCO coated conductors have been fabricated by the reel-to-reel processing using TFA-MOD method. In this work, the fluorine-free Y & Cu precursor solution was synthesized to shorten the calcining time by reducing the evolution of HF gas, thus the meter-long YBCO precursor films can be made within few hours by the continuous slot-die coating & calcination step using the F-free Y & Cu precursor solution. The annealing step was followed to make the YBCO films by the reel-to-reel method with the vertical gas flow system onto the moving tape. To increase the growth rate of the YBCO films by enhancing the removal of HF gas, the low total pressure was adopted in the annealing processing. And the water partial pressure and the oxygen partial pressure were varied to optimize the growth conditions of the MOD-YBCO films on the buffered metal tape. FE-SEM and XRD were used to investigate the surface morphologies and the texture of the meter-long YBCO films. The end-to-end critical current $(I_c)$ of 63A/cm-width and the critical current density $(J_c)$of $0.9MA/cm^2$ with the thickness of $0.7{\mu}m$ were obtained in the 0.42m long coated conductor.

• Bulletin of the Korean Chemical Society
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• 제34권5호
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• pp.1361-1365
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• 2013

The smallest ketenimine and hydrogen cyanide N-methylide ($CH_2CNH$ and $CH_2NCH$) are provided from the argon/acetonitrile matrix samples exposed to radiation from laser ablation of transition-metals. New infrared bands are observed in addition to better determination of the vibrational characteristics for the previously reported bands, and the $^{13}C$ substituted isotopomers ($^{13}{CH_2}^{13}CNH$ and $^{13}CH_2N^{13}CH$) are also generated. Density functional frequency calculations and the D and $^{13}C$ isotopic shifts substantiate the vibrational assignments. $CH_2CNH$ is probably produced through single-step conversion of $CH_3CN$, whereas $CH_2NCH$ through two-step conversion via 2H-azirine. Inter-conversions between these two products evidently do not occur during photolysis and annealing.

• 한국진공학회지
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• 제12권S1호
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• pp.56-59
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• 2003

Wurtzite GaN films are grown by low-pressure MOCVD on (0001)-plane sapphire substrates. The GaN films have a total thickness of 4 $\mu$m with a surface Mg-doped p-type layer, which has a thickness of 0.5 $\mu$m. 90k eV $Mn^{+}$ ions are implanted into the GaN films at room temperature with doses ranging from $1 \times10^{15}$ to $1 \times 10^{16}\textrm{cm}^{-2}$. After an annealing step at $770^{\circ}C$ in flowing $N_2$, the structural characteristics of the $Mn^{+}$ implanted GaN films are studied by X-ray diffraction (XRD), Rutherford backscattering spectrometry (RBS) and atomic force microscopy (AFM). The structural and morphological changes brought about by $Mn^{+}$ implantation and annealing are characterized.

• Journal of Magnetics
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• 제6권3호
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• pp.86-89
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• 2001

Microstructure modifications are investigated for annealed Co-based amorphous ribbon in vacuum and open air. X-ray diffraction (XRD) spectra for annealed sample in vacuum indicate atomic arrangements with initial nucleation of hcp-Co crystallite at 38$0^{\circ}C$ annealing temperature. However, the XRD spectra in samples with long annealing times of $t_a\geq300$ min demonstrate sharp and good developed surface crystalline hcp-, fcc- Co and $Co_2$Si phases. The giant magnetoimpedance (GMI) profile at 0.1 MHz displaying one-peak behavior in vacuum annealed samples at T = 38$0^{\circ}C$ irrespective of annealing time $t_a$ from 20 to 480 mim. For the annealed samples in an open air, the GMI profile shows two-peaks for $t_a$ = 20 min annealed sample. However, one of peaks disappears and an asymmetric GMI profile exhibits a drastic step-like change near zero field for $t_a\geq300$min. Such asymmetric GMI characteristics is related to the surface microstructures of fcc-Co, hop-Co and $Co_2$Si crystalline phases.

• 한국의학물리학회지:의학물리
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• 제13권4호
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• pp.181-186
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• 2002

세기조절 방사선 치료는 각각의 치료계획 시스템의 도스 최적화 알고리즘과 선형 가속기의 조합에 따라 다양하게 최적의 성능을 발휘 할 수 있다. 연세 암센터는 효과적인 방사선치료를 위하여 2002년 2월에 세기조절 방사선 치료 시스템을 도입하여 운영 중에 있으며 도입된 시스템은 CORVUS (Nomos, 미국) 치료계획 시스템과 LANTIS, PRIMEVIEW, PRIMART (Siemens, 미국)의 선형가속기 시스템으로 구성되어 있다. 최적화된 치료를 위해서는 CORVUS 치료계획기와 PRIMART 선형가속기의 적절한 조합 조건을 찾아 적용하는 것이 중요한 일이다. 이 Step ＆ Shoot 방식의 세기조절 방사선 치료기는 Finite Size Pencil Beams (FSPB) 도스모델과 simulated annealing method의 도스 최적화 알고리즘 및 IMFAST의 segmentation 알고리즘을 사용하고 있다. 본 연구는 segmentation 알고리듬에 관한 것으로 두개의 기본 beamlet 크기(1.0$\times$1.0 $\textrm{cm}^2$ 와 0.5$\times$1.0$\textrm{cm}^2$)와 4가지의 빔 세기 단계(5%, 10%, 20%, 33%)의 option을 4명의 상이한 환자 case에 대하여 적용하고 비교해 보았다. 상대적으로 작은 target 부피를 갖는 경우 TPS상의 segmentation의 설정에 민감하게 target 도스분포가 변하였으며 작은 beamlet일수록 intensity step을 작게 할수록 최적의 도스분포를 보여주었다.