• 제목/요약/키워드: 2-step Annealing

검색결과 183건 처리시간 0.046초

Salt-induced Differential Gene Expression in Italian Ryegrass (Lolium multiflorum Lam.) Revealed by Annealing Control Primer Based GeneFishing approach

  • Lee, Ki-Won;Lee, Sang-Hoon;Choi, Gi Jun;Ji, Hee Jung;Hwang, Tae Young;Kim, Won Ho;Rahman, Md. Atikur
    • 한국초지조사료학회지
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    • 제37권3호
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    • pp.231-236
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    • 2017
  • Salt stress is one of the most limiting factors that reduce plant growth, development and yield. However, identification of salt-inducible genes is an initial step for understanding the adaptive response of plants to salt stress. In this study, we used an annealing control primer (ACP) based GeneFishing technique to identify differentially expressed genes (DEGs) in Italian ryegrass seedlings under salt stress. Ten-day-old seedlings were exposed to 100 mM NaCl for 6 h. Using 60 ACPs, a total 8 up-regulated genes were identified and sequenced. We identified several promising genes encoding alpha-glactosidase b, light harvesting chlorophyll a/b binding protein, metallothionein-like protein 3B-like, translation factor SUI, translation initiation factor eIF1, glyceraldehyde-3-phosphate dehydrogenase 2 and elongation factor 1-alpha. These genes were mostly involved in plant development, signaling, ROS detoxification and salt acclimation. However, this study provides new molecular information of several genes to understand the salt stress response. These genes would be useful for the enhancement of salt stress tolerance in plants.

Pt/Si/Ti P형 4H-SiC 오옴성 접합에서 낮은 접촉 저항에 관한 연구 (Low resistivity ohmic Pt/Si/Ti contacts to p-type 4H-SiC)

  • 양성준;이주헌;노일호;김창교;조남인;정경화;김은동;김남균
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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    • pp.521-524
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    • 2001
  • In this letter. we report on the investigation of Ti. Pt/Si/Ti Ohmic contacts to p-type 4H-SiC. The contacts were formed by a 2-step vacuum annealing at $500^{\circ}C$ for 1h. $950^{\circ}C$ for 10 min respectively. The contact resistances were measured using the transmission line model method. which resulted in specific contact resistivities in the $3.5{\times}10^{-3}$ and $6.2{\times}10^{-4}ohm/cm^{2}$, and the physical properties of the contacts were examined using x-ray diffraction. microscopy. AES(auger electron spectroscopy). AES analysis has shown that, at this anneal temperature, there was a intermixing of the Ti and Si. migration of into SiC. Overlayer of Pt had the effect of decreasing the specific contact resistivity and improving the surface morphology of the annealed contact.

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열처리한 SiOCH 박막의 결합모드와 유전상수 특성 (Properties of Dielectric Constant and Bonding Mode of Annealed SiOCH Thin Film)

  • 김종욱;황창수;박용헌;김홍배
    • 한국전기전자재료학회논문지
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    • 제22권1호
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    • pp.47-52
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    • 2009
  • We studied the electrical characteristics of low-k SiOCH interlayer dielectric(ILD) films fabricated by plasma enhanced chemical vapor deposition (PECVD). BTMSM precursor was evaporated and introduced with the flow rates from 16 sccm to 25 sccm by 1 sccm step with the constant flow rate of 60 sccm $O_2$ in process chamber. The vibrational groups of SiOCH thin films were analyzed by FT!IR absorption lines, and the dielectric constant of the low-k SiOCH thin films were obtained by measuring C-V characteristic curves. The heat treatment on SiOCH thin films reduced the FTIR absorption intensity of the Si-O-$CH_3$ bonding group and Si-$CH_3$ bonding group but increased the intensity of Si-O-Si(C) bonding group. The SiOCH ILD films could have low dielectric constant $k\;{\simeq}\;2$ and also be reduced further by decreasing the $CH_3$ group density and increasing Si-O-Si(C) group density through annealing process.

Pt/Si/Ti P형 4H-SiC 오옴성 접합에서 낮은 접촉 저항에 관한 연구 (Low resistivity ohmic Pt/Si/Ti contacts to p-type 4H-SiC)

  • 양성준;이주헌;노일호;김창교;조남인;정경화;김은동;김남균
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 추계학술대회 논문집
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    • pp.521-524
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    • 2001
  • In this letter, we report on the investigation of Ti, Pt/Si/Ti Ohmic contacts to p-type 4H-SiC. The contacts were formed by a 2-step vacuum annealing at 500$^{\circ}C$ for 1h, 950$^{\circ}C$ for 10 min respectively. The contact resistances were measured using the transmission line model method, which resulted in specific contact resistivities in the 3.5x10$\^$-3/ and 6.2x10$\^$-4/ ohm/$\textrm{cm}^2$, and the physical properties of the contacts were examined using x-ray diffraction, microscopy, AES(auger electron spectroscopy). AES analysis has shown that, at this anneal temperature, there was a intermixing of the Ti and Si, migration of into SiC. Overlayer of Pt had the effect of decreasing the specific contact resistivity and improving the surface morphology of the annealed contact.

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급속열처리를 통한 알루미나 나노템플릿의 기공 균일도 개선에 관한 연구 (A Study on Improved Pore Uniformity of Nano Template Using the Rapid Thermal Processor)

  • 김동희;김진광;권오대;양계준;이재형;임동건
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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    • pp.637-638
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    • 2005
  • AAO templates were fabricated using a two-step anodization process with pretreatment such as electro polishing and annealing. To reduce process time and get well-aligned pore array, rapid thermal processor by an halogen lamp was employed in vacuum state at $500^{\circ}C$ for various time. The pore array of AAO template annealed at $500^{\circ}C$ for 2 h is comparable to a template annealed in conventional furnace at $500^{\circ}C$ for 30 h. The well-fabricated AAO template has the mean pore diameter of 70 nm, the barrierlayer thickness of 25 nm, and the pore depth of $9{\mu}m$. And the pore density can be as high as $2.0\times10^{10}cm^{-2}$.

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승화법에 의한 CdSe 성장과 특성 (Growth and characterites for CdSe single crystal grown by using sublimation method)

  • 홍광준;백승남;;김도선
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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    • pp.180-181
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    • 2006
  • CdSe single crystal was grown by sublimation method in the two-step vertical electric furnace. This CdSe single crustal had hexagonal structure whose lattice constants of $a_0$ and $c_0$ were measured $4.299\;{\AA}$ and $7.009\;{\AA}$ by extrapolation method, respectively. CdSe single crystal was n-type semiconductor values were measured from Hall data by Van der Pauw method in the room temperature. Mobility tends to increase in proportion to $T^{3/2}$ from 33K to 130K due to impurity scattering. but mobility tends to decrease in proprtion to $T^{-3/2}$ from 130K to 293K due to lattice scattering. CdSe thin film was made by electron beam evaporation technique had also hexagonal structure. The grain size of this thin film was grown to $1{\mu}m$ as a result of annealing in the vapor of Ar or Cd. Annealde CdSe thin film was n-type semiconductor whose carrier density had about $7{\times}10^{12}cm^{-3}$ and its mobility had about $1.6{\times}10^3cm^2/V$ sec at room temperature.

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SAW 대역 통과 필터용 ZnO 박막의 특성 개선 연구 (Performance Improvement of ZnO Thin Films for SAW Bandpass Filter)

  • 이승환;강광용;유윤식
    • 한국전자파학회논문지
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    • 제25권12호
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    • pp.1219-1227
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    • 2014
  • 펄스 레이저 증착(Pulsed laser Deposition: PLD) 및 RF 스퍼터링 증착(Sputtering Deposition)의 단계적 적용을 통해, 표면탄성파 대역 통과 필터(Surface Acoustic Wave Bandpass Filter: SAW-BPF)용 ZnO 박막을 성장시켰다. PLD 방법으로 성장된 ZnO 박막위에 RF sputtering 방법을 사용하여 ZnO 박막을 재증착시켰으며, 성장된 ZnO 박막의 물성을 분석하기 위하여 XRD, SEM 및 AFM 분석장비를 사용하였다. 두 가지 증착 방법이 단계적으로 적용되어 성장된 ZnO 박막의 경우, 결정성과 배향성이 우수하게 유지되면서 표면거칠기가 향상되었다. 분석 결과, ${\omega}$-scan의 반치폭과 표면거칠기의 RMS 값은 각각 $0.79^{\circ}$와 1.108 nm였다. 그리고 성장된 양질의 ZnO 박막을 사용하여 SAW-BPF를 제작하여 측정한 결과는 응답 특성의 중심주파수가 260.8 MHz, 대역폭은 2.98 MHz, 그리고 삽입손실은 36.5 dB이었다.

얇은 산화막의 TDDB 특성과 막내의 결함과의 상관성 (Time-Dependent Dielectric Breakdown Characteristics of Thin $SiO_2$ Films and Their Correlation to Defects in the Oxide)

  • 성영권;최종일;김상영;한성진
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1988년도 추계학술대회 논문집 학회본부
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    • pp.147-150
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    • 1988
  • Since the integration level of VLSI circuits progresses very quickly, a highly reliable thin $SiO_2$ film is required to fabricate a small-geometry MOS device. In the present study we have attempted to eliminate the failure-causing defects that develop in thin oxide films during the oxidation step by performing a long-time preoxidation and postoxidation annealing. The TDDB test and the copper decoration method were used to calculate the oxide defects density of MOS device. The dielectric reliability of high-quality thin oxides have been studied by using the time-zero-dielectric-breakdown (ramp-voltage-stressed I-V) and time-dependent-dielectric -breakdown (Constant-stressed I-V) tests. Failure times against temperature and electric field are examined and acceleration factors are abtained for each parameter. Based on the data obtained, breakdown wearout limitation for thin oxide films is estimated.

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HD 처리 및 열처리공정 개선에 의한 (Nd, Dy)-Fe-B 소결자석의 자기특성 향상 (Improvement of the Magnetic Properties of (Nd, Dy)-Fe-B Sintered Magnets by Modification of HD and Annealing Processes)

  • 남궁석;이연호;김문갑;장태석
    • 한국분말재료학회지
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    • 제17권5호
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    • pp.359-364
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    • 2010
  • In an attempt to optimize the magnetic properties of (Nd, Dy)-Fe-B sintered magnets, hydrogenation and post-sintering heat treatment processes were investigated at various hydrogenation temperatures and heat treatment temperatures. The coercivity of (Nd, Dy)-Fe-B sintered magnets hydrogenated at $400^{\circ}C$ increased to about 1.2 kOe without any detrimental effect on the remanence. Moreover, the coercivity of the magnets was enhanced further by a consecutive $2^{nd}$ and $3^{rd}$ step heat treatment. These results eventually leaded to the reduction of the Dy content in a high coercive (> 30 kOe) (Nd, Dy)-Fe-B sintered magnets, as much as 10%.

수소 첨가 열처리에 따른 Ti-6Al-4V 합금 분말의 격자 변형 및 내산화성 향상 (Lattice Deformation and Improvement Oxidation Resistance of Ti-6Al-4V Alloy Powders Prepared by Hydrogen Added Argon Heat Treatment)

  • 조계훈;오정민;임재원
    • 한국분말재료학회지
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    • 제26권2호
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    • pp.126-131
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    • 2019
  • In the present work, a new hydrogen added argon heat treatment process that prevents the formation of hydrides and eliminates the dehydrogenation step, is developed. Dissolved hydrogen has a good effect on sintering properties such as oxidation resistance and density of greens. This process can also reduce costs and processing time. In the experiment, commercially available Ti-6Al-4V powders are used. The powders are annealed using tube furnace in an argon atmosphere at $700^{\circ}C$ and $900^{\circ}C$ for 120 min. Hydrogen was injected temporarily during argon annealing to dissolve hydrogen, and a dehydrogenation process was performed simultaneously under an argon-only atmosphere. Without hydride formation, hydrogen was dissolved in the Ti-6Al-4V powder by X-ray diffraction and gas analysis. Hydrogen is first solubilized on the beta phase and expanded the beta phases' cell volume. TGA analysis was carried out to evaluate the oxidation resistance, and it is confirmed that hydrogen-dissolved Ti-6Al-4V powders improves oxidation resistance more than raw materials.