• Journal of The Korean Society of Grassland and Forage Science
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• v.37 no.3
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• pp.231-236
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• 2017

Salt stress is one of the most limiting factors that reduce plant growth, development and yield. However, identification of salt-inducible genes is an initial step for understanding the adaptive response of plants to salt stress. In this study, we used an annealing control primer (ACP) based GeneFishing technique to identify differentially expressed genes (DEGs) in Italian ryegrass seedlings under salt stress. Ten-day-old seedlings were exposed to 100 mM NaCl for 6 h. Using 60 ACPs, a total 8 up-regulated genes were identified and sequenced. We identified several promising genes encoding alpha-glactosidase b, light harvesting chlorophyll a/b binding protein, metallothionein-like protein 3B-like, translation factor SUI, translation initiation factor eIF1, glyceraldehyde-3-phosphate dehydrogenase 2 and elongation factor 1-alpha. These genes were mostly involved in plant development, signaling, ROS detoxification and salt acclimation. However, this study provides new molecular information of several genes to understand the salt stress response. These genes would be useful for the enhancement of salt stress tolerance in plants.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.521-524
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• 2001

In this letter. we report on the investigation of Ti. Pt/Si/Ti Ohmic contacts to p-type 4H-SiC. The contacts were formed by a 2-step vacuum annealing at $500^{\circ}C$ for 1h. $950^{\circ}C$ for 10 min respectively. The contact resistances were measured using the transmission line model method. which resulted in specific contact resistivities in the $3.5{\times}10^{-3}$ and $6.2{\times}10^{-4}ohm/cm^{2}$, and the physical properties of the contacts were examined using x-ray diffraction. microscopy. AES(auger electron spectroscopy). AES analysis has shown that, at this anneal temperature, there was a intermixing of the Ti and Si. migration of into SiC. Overlayer of Pt had the effect of decreasing the specific contact resistivity and improving the surface morphology of the annealed contact.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.1
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• pp.47-52
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• 2009

We studied the electrical characteristics of low-k SiOCH interlayer dielectric(ILD) films fabricated by plasma enhanced chemical vapor deposition (PECVD). BTMSM precursor was evaporated and introduced with the flow rates from 16 sccm to 25 sccm by 1 sccm step with the constant flow rate of 60 sccm $O_2$ in process chamber. The vibrational groups of SiOCH thin films were analyzed by FT!IR absorption lines, and the dielectric constant of the low-k SiOCH thin films were obtained by measuring C-V characteristic curves. The heat treatment on SiOCH thin films reduced the FTIR absorption intensity of the Si-O-$CH_3$ bonding group and Si-$CH_3$ bonding group but increased the intensity of Si-O-Si(C) bonding group. The SiOCH ILD films could have low dielectric constant $k\;{\simeq}\;2$ and also be reduced further by decreasing the $CH_3$ group density and increasing Si-O-Si(C) group density through annealing process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.521-524
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• 2001

In this letter, we report on the investigation of Ti, Pt/Si/Ti Ohmic contacts to p-type 4H-SiC. The contacts were formed by a 2-step vacuum annealing at 500$^{\circ}C$ for 1h, 950$^{\circ}C$ for 10 min respectively. The contact resistances were measured using the transmission line model method, which resulted in specific contact resistivities in the 3.5x10$\^$-3/ and 6.2x10$\^$-4/ ohm/$\textrm{cm}^2$, and the physical properties of the contacts were examined using x-ray diffraction, microscopy, AES(auger electron spectroscopy). AES analysis has shown that, at this anneal temperature, there was a intermixing of the Ti and Si, migration of into SiC. Overlayer of Pt had the effect of decreasing the specific contact resistivity and improving the surface morphology of the annealed contact.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.637-638
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• 2005

AAO templates were fabricated using a two-step anodization process with pretreatment such as electro polishing and annealing. To reduce process time and get well-aligned pore array, rapid thermal processor by an halogen lamp was employed in vacuum state at $500^{\circ}C$ for various time. The pore array of AAO template annealed at $500^{\circ}C$ for 2 h is comparable to a template annealed in conventional furnace at $500^{\circ}C$ for 30 h. The well-fabricated AAO template has the mean pore diameter of 70 nm, the barrierlayer thickness of 25 nm, and the pore depth of $9{\mu}m$. And the pore density can be as high as $2.0\times10^{10}cm^{-2}$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.180-181
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• 2006

CdSe single crystal was grown by sublimation method in the two-step vertical electric furnace. This CdSe single crustal had hexagonal structure whose lattice constants of $a_0$ and $c_0$ were measured $4.299\;{\AA}$ and $7.009\;{\AA}$ by extrapolation method, respectively. CdSe single crystal was n-type semiconductor values were measured from Hall data by Van der Pauw method in the room temperature. Mobility tends to increase in proportion to $T^{3/2}$ from 33K to 130K due to impurity scattering. but mobility tends to decrease in proprtion to $T^{-3/2}$ from 130K to 293K due to lattice scattering. CdSe thin film was made by electron beam evaporation technique had also hexagonal structure. The grain size of this thin film was grown to $1{\mu}m$ as a result of annealing in the vapor of Ar or Cd. Annealde CdSe thin film was n-type semiconductor whose carrier density had about $7{\times}10^{12}cm^{-3}$ and its mobility had about $1.6{\times}10^3cm^2/V$ sec at room temperature.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.25 no.12
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• pp.1219-1227
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• 2014

For development of the surface acoustic wave bandpass filter(SAW-BPF), we fabricated the high quality ZnO thin films through the step-by-step(double) deposition using two different deposition methods which are pulsed laser deposition(PLD) and RF sputtering techniques. The second growth of ZnO thin films was completed by RF sputtering method on the first ZnO thin films pre-deposited by PLD method. The characteristics of ZnO thin films were analyzed by XRD, SEM and AFM systems. The FWHM of ${\omega}$-scan analysis and the minimum RMS value of surface roughness of step-by-step grown ZnO thin films were $0.79^{\circ}$ and 1.108 nm respectively. As a result, the crystallinity and the preferred orientation of the grown ZnO thin films were kept good quality and the surface roughnesses of those were improved by post-annealing process as comparison with ZnO thin film fabricated by the conventional PLD technique only. Using these proposed ZnO thin films, we demonstrated the RF device such as SAW-BPF, built by the proposed ZnO thin films, shows that it has the bandwidth of 2.98 MHz and the insertion loss of 36.5 dB at the center frequency of 260.8 MHz, respectively.

• Proceedings of the KIEE Conference
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• 1988.11a
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• pp.147-150
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• 1988

Since the integration level of VLSI circuits progresses very quickly, a highly reliable thin $SiO_2$ film is required to fabricate a small-geometry MOS device. In the present study we have attempted to eliminate the failure-causing defects that develop in thin oxide films during the oxidation step by performing a long-time preoxidation and postoxidation annealing. The TDDB test and the copper decoration method were used to calculate the oxide defects density of MOS device. The dielectric reliability of high-quality thin oxides have been studied by using the time-zero-dielectric-breakdown (ramp-voltage-stressed I-V) and time-dependent-dielectric -breakdown (Constant-stressed I-V) tests. Failure times against temperature and electric field are examined and acceleration factors are abtained for each parameter. Based on the data obtained, breakdown wearout limitation for thin oxide films is estimated.

• Journal of Powder Materials
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• v.17 no.5
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• pp.359-364
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• 2010

In an attempt to optimize the magnetic properties of (Nd, Dy)-Fe-B sintered magnets, hydrogenation and post-sintering heat treatment processes were investigated at various hydrogenation temperatures and heat treatment temperatures. The coercivity of (Nd, Dy)-Fe-B sintered magnets hydrogenated at $400^{\circ}C$ increased to about 1.2 kOe without any detrimental effect on the remanence. Moreover, the coercivity of the magnets was enhanced further by a consecutive $2^{nd}$ and $3^{rd}$ step heat treatment. These results eventually leaded to the reduction of the Dy content in a high coercive (> 30 kOe) (Nd, Dy)-Fe-B sintered magnets, as much as 10%.

• Journal of Powder Materials
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• v.26 no.2
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• pp.126-131
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• 2019

In the present work, a new hydrogen added argon heat treatment process that prevents the formation of hydrides and eliminates the dehydrogenation step, is developed. Dissolved hydrogen has a good effect on sintering properties such as oxidation resistance and density of greens. This process can also reduce costs and processing time. In the experiment, commercially available Ti-6Al-4V powders are used. The powders are annealed using tube furnace in an argon atmosphere at $700^{\circ}C$ and $900^{\circ}C$ for 120 min. Hydrogen was injected temporarily during argon annealing to dissolve hydrogen, and a dehydrogenation process was performed simultaneously under an argon-only atmosphere. Without hydride formation, hydrogen was dissolved in the Ti-6Al-4V powder by X-ray diffraction and gas analysis. Hydrogen is first solubilized on the beta phase and expanded the beta phases' cell volume. TGA analysis was carried out to evaluate the oxidation resistance, and it is confirmed that hydrogen-dissolved Ti-6Al-4V powders improves oxidation resistance more than raw materials.