• 동력기계공학회지
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• 제4권2호
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• pp.71-76
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• 2000

It is well known that finite element analysis often has the inaccuracy when they are in conflict with test results. Model updating is concerned with the correction of analytical model by processing records of response from test results. This paper introduce a model updating technique using the frequency response function data. The measurement data is able to be used directly in the FRF sensitivity method because it is not necessary to identify. When a damping model is updated, it is necessary for the sensitivity matrix to be divided Into the complex part and real part. As an applying model, a cantilever and a rotor system are used. Specially the machined clearance($C_p$) of the journal bearing is updated.

• KSII Transactions on Internet and Information Systems (TIIS)
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• 제8권9호
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• pp.2967-2981
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• 2014

Device-to-Device (D2D) communication is a technology component for long-term evolution-advanced (LTE-A). In D2D communication, users in close proximity to each other can communicate directly without going through a base station; such direct communication can improve spectral efficiency. Although D2D communication brings improvement in spectral efficiency, it also causes interference to the cellular network as a result of spectrum sharing. In particularly, D2D communication can generate interference for each D2D pair when the common wireless medium in a co-located limited area is accessed. Even though the interference management for between the D2D pair and cellular networks has been proposed, the interference reducing methods have still not been fully studied for the D2D pairs. In this paper, we investigate the problem of D2D pair coexistence in which interference is considered between D2D pairs. Using a signal to interference model for a target D2D pair, we provide an analysis of the aggregated throughput of a dense D2D network. For a target D2D pair, we assume that the desired signal and interference signals obey multipath fading and shadow fading. Through analysis, we demonstrate the effect of cluster size such as the number of D2D pairs and the size of the considered area on the network performance. The analytical results are compared with computer simulations. Our work can be used for a rough guideline for controlling the system throughput in a dense D2D network environment.

• Membrane and Water Treatment
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• 제7권2호
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• pp.87-100
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• 2016

A numerical simulation of membrane evaporation process was carried out in this work. The aim of simulation is to describe transport of water through porous membranes applicable to the concentration of aqueous solutions. A three-dimensional mathematical model was developed which considers transport phenomena including mass, heat, and momentum transfer in membrane evaporation process. The equations of model were then solved numerically using finite element method. The results of simulation in terms of evaporation flux were compared with experimental data, and confirmed the accuracy of model. Moreover, profile of pressure, concentration, and heat flux were obtained and analyzed. The results revealed that developed 3D model is capable of predicting performance of membrane evaporators in concentration of aqueous solutions.

• Structural Engineering and Mechanics
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• 제78권4호
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• pp.439-453
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• 2021

In this work, quasi three-dimensional (quasi-3D) shear deformation theory is presented for bending and dynamic analysis of functionally graded (FG) plates. The effect of varying material properties and volume fraction of the constituent on dynamic and bending behavior of the FG plate is discussed. The benefit of this model over other contributions is that a number of variables is diminished. The developed model considers nonlinear displacements through the thickness and ensures the free boundary conditions at top and bottom faces of the plate without using any shear correction factors. The basic equations that account for the effects of transverse and normal shear stresses are derived from Hamilton's principle. The analytical solutions are determined via the Navier procedure. The accuracy of the proposed formulation is proved by comparisons with the different 2D, 3D and quasi-3D solutions found in the literature.

• JSTS:Journal of Semiconductor Technology and Science
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• 제11권4호
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• pp.278-286
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• 2011

In this paper, we present a compact model of gate-voltage-dependent quantum effects in short-channel surrounding-gate (SG) metal-oxide-semiconductor field-effect transistors (MOSFETs). We based the model on a two-dimensional (2-D) analytical solution of Poisson's equation using cylindrical coordinates. We used the model to investigate the electrostatic potential and current sensitivities of various gate lengths ($L_g$) and radii (R). Schr$\ddot{o}$dinger's equation was solved analytically for a one-dimensional (1-D) quantum well to include quantum effects in the model. The model takes into account quantum effects in the inversion region of the SG MOSFET using a triangular well. We show that the new model is in excellent agreement with the device simulation results in all regions of operation.

• 한국산업융합학회 논문집
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• 제22권4호
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• pp.387-394
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• 2019

This paper presents an analytical study on the strength and stiffness of various types of truss structures. The applied models are triangular-like opened truss-wall triangular model (OTT), closed truss-wall triangular model (CTT), opened solid-wall triangular model (OST), and hypercube models defined as core-filled or core-spaced cube. The models are analyzed by numerical model analysis using DEFORM 2D/3D tool with AISI 304 stainless steel. Then, the ideal solutions for stiffness and strength are defined. Finally, the relative elastic modulus of the core-spaced model is obtained as 0.0009, which is correlated with the cancellous bone for the relative density range of 0.029-0.03, and the relative elastic modulus for the core-filled model is obtained as 0.0015, which is correlated with cancellous bone for the relative density range of 0.035-0.036. For the relative compressive yield strength, the OTT reasonably agrees with the cancellous bone for the relative density of 0.042 and the relative compressive strength of 0.05. The CTT and OST are in good agreement at the relative density of 0.013 and the relative compressive yield strength of 0.002. The hypercube models can be used for the cancellous bone for stiffness, and the triangular models can be used for the cancellous bone for strength. However, none of the models can be used to replace the compact bone because it requires much higher stiffness and strength. In the near future, compact bone replacement must be further studied. In addition, previously mentioned models should be developed further.

• 한국지하수토양환경학회지:지하수토양환경
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• 제13권6호
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• pp.40-49
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• 2008

평평한 fractures에서 공극을 가진 모암으로의 NAPL 확산을 수치적인 방법으로 해석하였다. 2D와 3D에 대한 일회성 디스크 소스와 3D 연속 디스크소스에 대한 모델은 Caralaw and Jaeger(1959)의 이론을 바탕으로 개발하였다. 3D 연속 디스크소스에 대해 공극모암으로 확산되는 NAPL의 총량을 계산할 수 없기 때문에 확산이 반구형으로 이루어진다고 가정하여 등농도선의 합을 이용하여 공극모암으로 확산되는 NAPL의 총량을 계산하였다. 수치적 계산에 따르면 2D 대비 3D의 경우에 NAPL 손실 시간이 현저히 빠른 것으로 나타났으며, 디스크 소스의 중심점에서 normalized된 농도는 일회성 디스크 소스는 시간에 따라 감소하고, 연속 디스크 소스는 증가하는 것으로 나타났으며, 시간과 공간에 따라 확산율은 감소하는 것으로 나타났다. 그리고 NAPL의 mass 손실은 1에 도달하지 못하였으며, 이는 연속 디스크 소스를 semi-infinite로 가정하고 적분했기 때문이다. 확산에 의해 사라지는 시간은 소스의 크기 및 모암 공극률 크기 증가에 비례해서 지수함수적으로 증가하고, 반면 NAPL의 용해성이 증가하면 감소하는 것으로 나타났다.

• 한국전기전자재료학회논문지
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• 제29권12호
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• pp.750-758
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• 2016

For the channel doping of shallow junction and retrograde well formation in CMOS, indium can be implanted in silicon. The retrograde doping profiles can serve the needs of channel engineering in deep MOS devices for punch-through suppression and threshold voltage control. Indium is heavier element than B, $BF_2$ and Ga ions. It also has low coefficient of diffusion at high temperatures. Indium ions can be cause the erode of wafer surface during the implantation process due to sputtering. For the ultra shallow junction, indium ions can be implanted for p-doping in silicon. UT-MARLOWE and SRIM as Monte carlo ion-implant models have been developed for indium implantation into single crystal and amorphous silicon, respectively. An analytical tool was used to carry out for the annealing process from the extracted simulation data. For the 1D (one-dimensional) and 2D (two-dimensional) diffused profiles, the analytical model is also developed a simulation program with $C^{{+}{+}}$ code. It is very useful to simulate the indium profiles in implanted and annealed silicon autonomously. The fundamental ion-solid interactions and sputtering effects of ion implantation are discussed and explained using SRIM and T-dyn programs. The exact control of indium doping profiles can be suggested as a future technology for the extreme shallow junction in the fabrication process of integrated circuits.

• Steel and Composite Structures
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• 제25권2호
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• pp.127-139
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• 2017

In this paper, an exact analytical solution for simply supported sandwich plate which considers the permeation effect of adhesives is presented. The permeation layer is described as functionally graded material (FGM), the elastic modulus of which is assumed to be graded along the thickness following the exponential law. Based on the exact three-dimensional (3-D) elasticity theory, the solution of stresses and displacements for each layer is derived. By means of the recursive matrix method, the solution can be efficiently obtained for plates with many layers. The present solution obtained can be used as a benchmark to access other simplified solutions. The comparison study indicates that the finite element (FE) solution is close to the present one when the FGM layer in the FE model is divided into a series of homogeneous layers. However, the present method is more efficient than the FE method, with which the mesh division and computation are time-consuming. Moreover, the solution based on Kirchhoff-Love plate theory is greatly different from the present solution for thick plates. The influence of the thickness of the permeation layer on the stress and displacement fields of the sandwich plate is discussed in detail. It is indicated that the permeation layer can effectively relieve the discontinuity stress at the interface.

• JSTS:Journal of Semiconductor Technology and Science
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• 제15권6호
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• pp.585-593
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• 2015

In the nanoscale regime, many multigate devices are explored to reduce their size further and to enhance their performance. In this paper, design of a novel device called, Triple Material Surrounding Gate Tunnel Field effect transistor (TMSGTFET) has been developed and proposed. The advantages of surrounding gate and tunnel FET are combined to form a new structure. The gate material surrounding the device is replaced by three gate materials of different work functions in order to curb the short channel effects. A 2-D analytical modeling of the surface potential, lateral electric field, vertical electric field and drain current of the device is done, and the results are discussed. A step up potential profile is obtained which screens the drain potential, thus reducing the drain control over the channel. This results in appreciable diminishing of short channel effects and hot carrier effects. The proposed model also shows improved ON current. The excellent device characteristics predicted by the model are validated using TCAD simulation, thus ensuring the accuracy of our model.