• Journal of Magnetics
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• 제22권2호
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• pp.257-265
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• 2017

This paper presents a 2-D analytical method to calculate the back EMF of the axial flux permanent magnet synchronous generator (AFPMSG) with coreless stator and dual rotor having magnets mounted on both sides of rotor yoke. Furthermore, in order to reduce the no load voltage total harmonics distortion (VTHD), the initial model of the coreless AFPMSG is optimized by using a developed analytical method. Optimization using the 2-D analytical method reduces the optimization time to less than a minute. The back EMF obtained by using the 2-D analytical method is verified by a time stepped 3-D finite element analysis (FEA) for both the initial and optimized model. Finally, the VTHD, output torque and torque ripples of both the initial and optimized models are compared with 3D-FEA. The result shows that the optimized model reduces the VTHD and torque ripples as compared to the initial model. Furthermore, the result also shows that output torque increases as the result of the optimization.

• Structural Engineering and Mechanics
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• 제10권1호
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• pp.67-79
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• 2000

Critical loads and load-carrying capacities for steel scaffolds used as shoring systems were compared using computational and experimental methods in Part I of this paper. In that paper, a simple 2-D model was established for use in evaluating the structural behavior of scaffold-shoring systems. This 2-D model was derived using an incremental finite element analysis (FEA) of a typical complete scaffold-shoring system. Although the simplified model is only two-dimensional, it predicts the critical loads and failure modes of the complete system. The objective of this paper is to present a closed-form solution to the 2-D model. To simplify the analysis, a simpler model was first established to replace the 2-D model. Then, a closed-form solution for the critical loads and failure modes based on this simplified model were derived using a bifurcation (eigenvalue) approach to the elastic-buckling problem. In this closed-form equation, the critical loads are shown to be function of the number of stories, material properties, and section properties of the scaffolds. The critical loads and failure modes obtained from the analytical (closed-form) solution were compared with the results from the 2-D model. The comparisons show that the critical loads from the analytical solution (simplified model) closely match the results from the more complex model, and that the predicted failure modes are nearly identical.

• 한국전기전자재료학회논문지
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• 제25권1호
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• pp.6-14
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• 2012

For integrated complementary metal oxide semiconductor (CMOS) circuits, the lateral spread for two-dimensional (2-D) impurity distributions are very important for the analyzing the devices. The measured two-dimensional SEM data obtained using the chemical etching-method matched very well with the results of the Gauss model for boron implanted samples. But the profiles in boron implanted silicon were deviated from the Gauss model. The profiles in boron implanted silicon were shown a little bit steep profile in the deep region due to backscattering effect on the near surface from the bombardments of light boron ions. From the simulated 3-D data obtained using an analytical model, the 1-D and 2-D data were compared with the experimental data and could be verified the justification from the experimental data. The data of 3-D model were also shown good agreements with the experimental and the simulated data. It can be used in the 3-D chip design and the analysis of microelectro-mecanical system (MEMS) and special devices.

• 한국콘크리트학회:학술대회논문집
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• 한국콘크리트학회 2003년도 가을 학술발표회 논문집
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• pp.388-391
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• 2003

In this study, the experimental results were simulated by using a nonlinear analysis programs IDARC 2D and RUAUMOKO 2D. These programs use a global Takeda-like model. The objectives of this study is to verify the correlation between the experimental and analytical responses of reinforced concrete (RC) frame and to provide the calibration to the available static inelastic analysis techniques. The evaluation of the accuracy of analytical simulation by IDARC 2D and RUAUMOKO 2D leads to the conclusion that the global behaviors can be, in general, simulated with limited accuracy in the linear analysis as detailing.

• Journal of Electrical Engineering and Technology
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• 제8권6호
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• pp.1481-1486
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• 2013

In this paper, a new two dimensional (2D) analytical model of a Dual Material Gate tunnel field effect transistor (DMG TFET) is presented. The parabolic approximation technique is used to solve the 2-D Poisson equation with suitable boundary conditions. The simple and accurate analytical expressions for surface potential and electric field are derived. The electric field distribution can be used to calculate the tunneling generation rate and numerically extract tunneling current. The results show a significant improvement of on-current and reduction in short channel effects. Effectiveness of the proposed method has been confirmed by comparing the analytical results with the TCAD simulation results.

• 한국전산구조공학회논문집
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• 제15권2호
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• pp.379-387
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• 2002

본 연구에서는 단부 철근콘크리트와 중앙부 철골로 이루어진 혼합구조보의 비선형 이력거동에 대한 해석 모형을 제시하였다. 해석을 위하여 IDARC2D 프로그램을 사용하였으며, 기존의 실험결과를 대상으로 적절한 모형화 기법과 계수를 제시하였다. IDARC2D의 다각형 모형은 부재의 초기강성을 과대평가할 수 있기 때문에, 먼저 혼합구조보의 초기강성을 적절히 표현할 수 있는 새로운 혼합모형을 도입하였다. 그리고 혼합모형을 이용하여 혼합구조보의 이력거동을 적절히 표현할 수 있도록 이력거동 계수들을 제시하였다. 끝으로 해석한 결과를 실험결과와 비교·평가하였으며, 초기강성은 5%이내, 강도는 10%이내의 우수한 결과를 보였다.

• Geomechanics and Engineering
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• 제28권3호
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• pp.225-237
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• 2022

Settlement evaluation is important for shallow tunnels in big cities to estimate the settlement that occurs due to the excavation of twin tunnels. The majority of earlier research on analytical solutions, on the other hand, concentrated on calculating the settlement for a single tunnel. This research introduces a procedure to evaluate the settlement induced by the excavation of twin tunnels (two parallel tunnels). In this study, a series of numerical analysis were performed to validate the analytical solution results. Two geological conditions were considered to derive the settlement depending on each case. The analytical and numerical methods were compared, which involved considering many sections and conducting a parametric study; the results have good agreement. Moreover, a comparison of the 3D flat model and 2D (FEM) with the analytical solution shows that in the fill soil, the maximum settlement values were obtained by the analytical solution. In contrast, the values obtained by the analytical solution in the rock is more conservative than those in the fill. Finally, this method was shown to be appropriate for twin tunnels dug side by side by utilizing finite element analysis 3D and 2D (PLAXIS 3D and PLAXIS 2D) to verify the analytical equations. Eventually, it will be possible to use this approach to predict settlement troughs over twin tunnels.

• JSTS:Journal of Semiconductor Technology and Science
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• 제8권3호
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• pp.221-226
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• 2008

A new two dimensional (2-D) analytical model for the Threshold Voltage on dual material surrounding gate (DMSG) MOSFETs is presented in this paper. The parabolic approximation technique is used to solve the 2-D Poisson equation with suitable boundary conditions. The simple and accurate analytical expression for the threshold voltage and sub-threshold swing is derived. It is seen that short channel effects (SCEs) in this structure is suppressed because of the perceivable step in the surface potential which screens the drain potential. We demonstrate that the proposed model exhibits significantly reduced SCEs, thus make it a more reliable device configuration for high speed wireless communication than the conventional single material surrounding gate (SMSG) MOSFETs.

• Journal of Electrical Engineering and Technology
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• 제9권2호
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• pp.655-661
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• 2014

In this paper, a new two dimensional (2D) analytical modeling and simulation for a surrounding gate tunnel field effect transistor (TFET) is proposed. The Parabolic approximation technique is used to solve the 2-D Poisson equation with suitable boundary conditions and analytical expressions for surface potential and electric field are derived. This electric field distribution is further used to calculate the tunneling generation rate and thus we numerically extract the tunneling current. The results show a significant improvement in on-current characteristics while short channel effects are greatly reduced. Effectiveness of the proposed model has been confirmed by comparing the analytical results with the TCAD simulation results.

• EDISON SW 활용 경진대회 논문집
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• 제5회(2016년)
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• pp.368-372
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• 2016

In this paper, the physics-based analytical model of transition metal dichalcogenide (TMD)-based double-gate (DG) tunneling field-effect transistors (TFETs) is proposed. The proposed model is derived by using the two-dimensional (2-D) Landauer formula and the Wentzel-Kramers-Brillouin (WKB) approximation. For improving the accuracy, nonlinear and continuous lateral energy band profile is applied to the model. 2-D density of states (DOS) and two-band effective Hamiltonian for TMD materials are also used in order to consider the 2-D nature of TMD-based TFETs. The model is validated by using the tight-binding non-equilibrium Green's function (NEGF)-based quantum transport simulation in the case of monolayer molybdenum disulfide ($MoS_2$)-based TFETs.