• Journal of Magnetics
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• v.22 no.2
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• pp.257-265
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• 2017

This paper presents a 2-D analytical method to calculate the back EMF of the axial flux permanent magnet synchronous generator (AFPMSG) with coreless stator and dual rotor having magnets mounted on both sides of rotor yoke. Furthermore, in order to reduce the no load voltage total harmonics distortion (VTHD), the initial model of the coreless AFPMSG is optimized by using a developed analytical method. Optimization using the 2-D analytical method reduces the optimization time to less than a minute. The back EMF obtained by using the 2-D analytical method is verified by a time stepped 3-D finite element analysis (FEA) for both the initial and optimized model. Finally, the VTHD, output torque and torque ripples of both the initial and optimized models are compared with 3D-FEA. The result shows that the optimized model reduces the VTHD and torque ripples as compared to the initial model. Furthermore, the result also shows that output torque increases as the result of the optimization.

• Structural Engineering and Mechanics
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• v.10 no.1
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• pp.67-79
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• 2000

Critical loads and load-carrying capacities for steel scaffolds used as shoring systems were compared using computational and experimental methods in Part I of this paper. In that paper, a simple 2-D model was established for use in evaluating the structural behavior of scaffold-shoring systems. This 2-D model was derived using an incremental finite element analysis (FEA) of a typical complete scaffold-shoring system. Although the simplified model is only two-dimensional, it predicts the critical loads and failure modes of the complete system. The objective of this paper is to present a closed-form solution to the 2-D model. To simplify the analysis, a simpler model was first established to replace the 2-D model. Then, a closed-form solution for the critical loads and failure modes based on this simplified model were derived using a bifurcation (eigenvalue) approach to the elastic-buckling problem. In this closed-form equation, the critical loads are shown to be function of the number of stories, material properties, and section properties of the scaffolds. The critical loads and failure modes obtained from the analytical (closed-form) solution were compared with the results from the 2-D model. The comparisons show that the critical loads from the analytical solution (simplified model) closely match the results from the more complex model, and that the predicted failure modes are nearly identical.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.1
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• pp.6-14
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• 2012

For integrated complementary metal oxide semiconductor (CMOS) circuits, the lateral spread for two-dimensional (2-D) impurity distributions are very important for the analyzing the devices. The measured two-dimensional SEM data obtained using the chemical etching-method matched very well with the results of the Gauss model for boron implanted samples. But the profiles in boron implanted silicon were deviated from the Gauss model. The profiles in boron implanted silicon were shown a little bit steep profile in the deep region due to backscattering effect on the near surface from the bombardments of light boron ions. From the simulated 3-D data obtained using an analytical model, the 1-D and 2-D data were compared with the experimental data and could be verified the justification from the experimental data. The data of 3-D model were also shown good agreements with the experimental and the simulated data. It can be used in the 3-D chip design and the analysis of microelectro-mecanical system (MEMS) and special devices.

• Proceedings of the Korea Concrete Institute Conference
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• 2003.11a
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• pp.388-391
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• 2003

In this study, the experimental results were simulated by using a nonlinear analysis programs IDARC 2D and RUAUMOKO 2D. These programs use a global Takeda-like model. The objectives of this study is to verify the correlation between the experimental and analytical responses of reinforced concrete (RC) frame and to provide the calibration to the available static inelastic analysis techniques. The evaluation of the accuracy of analytical simulation by IDARC 2D and RUAUMOKO 2D leads to the conclusion that the global behaviors can be, in general, simulated with limited accuracy in the linear analysis as detailing.

• Journal of Electrical Engineering and Technology
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• v.8 no.6
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• pp.1481-1486
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• 2013

In this paper, a new two dimensional (2D) analytical model of a Dual Material Gate tunnel field effect transistor (DMG TFET) is presented. The parabolic approximation technique is used to solve the 2-D Poisson equation with suitable boundary conditions. The simple and accurate analytical expressions for surface potential and electric field are derived. The electric field distribution can be used to calculate the tunneling generation rate and numerically extract tunneling current. The results show a significant improvement of on-current and reduction in short channel effects. Effectiveness of the proposed method has been confirmed by comparing the analytical results with the TCAD simulation results.

• Journal of the Computational Structural Engineering Institute of Korea
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• v.15 no.2
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• pp.379-387
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• 2002

This paper presents an analytical model on nonlinear hysteretic behavior of hybrid steel beam with reinforced concrete ends. The modeling method and appropriate coefficients with IDARC2D were proposed from the comparison with previous test results. Since the polygonal model of IDARC2D nay overestimate, new analytical model with the initial stiffness reduction coefficient was proposed. The hysteretic coefficients for the analysis of the hybrid steel beam with reinforced concrete ends were also presented. The analytical results were compared with previous experiments. The initial stiffness and the strength were predicted with less than 5% error and 10% error, respectively.

• Geomechanics and Engineering
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• v.28 no.3
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• pp.225-237
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• 2022

Settlement evaluation is important for shallow tunnels in big cities to estimate the settlement that occurs due to the excavation of twin tunnels. The majority of earlier research on analytical solutions, on the other hand, concentrated on calculating the settlement for a single tunnel. This research introduces a procedure to evaluate the settlement induced by the excavation of twin tunnels (two parallel tunnels). In this study, a series of numerical analysis were performed to validate the analytical solution results. Two geological conditions were considered to derive the settlement depending on each case. The analytical and numerical methods were compared, which involved considering many sections and conducting a parametric study; the results have good agreement. Moreover, a comparison of the 3D flat model and 2D (FEM) with the analytical solution shows that in the fill soil, the maximum settlement values were obtained by the analytical solution. In contrast, the values obtained by the analytical solution in the rock is more conservative than those in the fill. Finally, this method was shown to be appropriate for twin tunnels dug side by side by utilizing finite element analysis 3D and 2D (PLAXIS 3D and PLAXIS 2D) to verify the analytical equations. Eventually, it will be possible to use this approach to predict settlement troughs over twin tunnels.

• JSTS:Journal of Semiconductor Technology and Science
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• v.8 no.3
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• pp.221-226
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• 2008

A new two dimensional (2-D) analytical model for the Threshold Voltage on dual material surrounding gate (DMSG) MOSFETs is presented in this paper. The parabolic approximation technique is used to solve the 2-D Poisson equation with suitable boundary conditions. The simple and accurate analytical expression for the threshold voltage and sub-threshold swing is derived. It is seen that short channel effects (SCEs) in this structure is suppressed because of the perceivable step in the surface potential which screens the drain potential. We demonstrate that the proposed model exhibits significantly reduced SCEs, thus make it a more reliable device configuration for high speed wireless communication than the conventional single material surrounding gate (SMSG) MOSFETs.

• Journal of Electrical Engineering and Technology
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• v.9 no.2
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• pp.655-661
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• 2014

In this paper, a new two dimensional (2D) analytical modeling and simulation for a surrounding gate tunnel field effect transistor (TFET) is proposed. The Parabolic approximation technique is used to solve the 2-D Poisson equation with suitable boundary conditions and analytical expressions for surface potential and electric field are derived. This electric field distribution is further used to calculate the tunneling generation rate and thus we numerically extract the tunneling current. The results show a significant improvement in on-current characteristics while short channel effects are greatly reduced. Effectiveness of the proposed model has been confirmed by comparing the analytical results with the TCAD simulation results.

• Proceeding of EDISON Challenge
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• 2016.03a
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• pp.368-372
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• 2016

In this paper, the physics-based analytical model of transition metal dichalcogenide (TMD)-based double-gate (DG) tunneling field-effect transistors (TFETs) is proposed. The proposed model is derived by using the two-dimensional (2-D) Landauer formula and the Wentzel-Kramers-Brillouin (WKB) approximation. For improving the accuracy, nonlinear and continuous lateral energy band profile is applied to the model. 2-D density of states (DOS) and two-band effective Hamiltonian for TMD materials are also used in order to consider the 2-D nature of TMD-based TFETs. The model is validated by using the tight-binding non-equilibrium Green's function (NEGF)-based quantum transport simulation in the case of monolayer molybdenum disulfide ($MoS_2$)-based TFETs.