• 한국재료학회지
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• 제18권11호
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• pp.571-576
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• 2008

The simulation program for solar cells, PC1D, was briefly reviewed and the device modeling of a multicrystalline Si solar cell using the program was carried out to understand the internal operating principles. The effects of design parameters on the light absorption and the quantum efficiency were investigated and strategies to reduce carrier recombination, such as back surface field and surface passivation, were also characterized with the numerical simulation. In every step of the process, efficiency improvements for the key performance characteristics of the model device were determined and compared with the properties of the solar cell, whose efficiency (20.3%) has been confirmed as the highest in multicrystalline Si devices. In this simulation work, it was found that the conversion efficiency of the prototype model (13.6%) can be increased up to 20.7% after the optimization of design parameters.

• Current Photovoltaic Research
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• 제3권3호
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• pp.75-79
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• 2015

Recently, $Cu_2ZnSn(S_xSe_{1-x})_4$ (CZTSSe) has been received a tremendous attraction as light absorber material in thin film solar cells (TFSCs), because of its earth abundance, inexpensive and non-toxic constituents and versatile material characteristics. Kesterite CZTSSe thin films were synthesized by sulfo-selenization of sputtered Cu/Sn/Zn stacked metallic precursors. The sulfo-selenization of Cu/Sn/Zn stacked metallic precursor thin films has been carried out in a graphite box using rapid thermal annealing (RTA) technique. Annealing process was done under sulfur and selenium vapor pressure using Ar gas at $520^{\circ}C$ for 10 min. The effect of tuning Se/(S+Se) precursor composition ratio on the properties of CZTSSe films has been investigated. The XRD, Raman, FE-SEM and XRF results indicate that the properties of sulfo-selenized CZTSSe thin films strongly depends on the Se/(S+Se) composition ratio. In particular, the CZTSSe TFSCs with Se/(S+Se) = 0.37 exhibits the best power conversion efficiency of 4.83% with $V_{oc}$ of 467 mV, $J_{sc}$ of $18.962mA/cm^2$ and FF of 54%. The systematic changes observed with increasing Se/(S+Se) ratio have been discussed in detail.

• 한국산학기술학회논문지
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• 제18권10호
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• pp.777-784
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• 2017

일반적으로 열전발전 소자를 사용하여 에너지 하베스팅을 하는 경우, 시스템의 작동환경에 의해 주어지는 온도구배를 활용하게 된다. 따라서 열전소자의 특성상 큰 온도구배를 기대하기 어려운 작동환경에서는 원하는 출력을 얻을 수 없으며, 작동 온도가 높을 때 얻어지게 되는 최적의 발전효율을 기대하기 힘들다. 자연환경에서 얻을 수 있는 태양에너지를 활용한 신재생 에너지의 활용은 그 동안 태양광발전이나 태양열발전에 국한되어 왔다. 태양광발전은 태양광의 일정 파장대만 사용하고 빛의 산란에 의해 발전효율이 낮아지는 단점이 있으며, 태양열발전은 일반적으로 대규모 설비를 갖춰야 하는 공간상의 제약이 있다. 본 연구에서는 태양열을 집광하여 열전소자에 조사함으로서 큰 온도구배를 형성하여 상용 열전소자의 출력을 향상시킬 수 있는 간단한 소형 발전시스템을 설계 및 제작하였다. 장시간 태양열 집중을 위해 태양 추적 장치를 설치하였으며, 열전소자 하부에 고온의 태양열이 전달되어 온도 편차가 줄어드는 현상을 막기 위해 액체 순환식 냉각기를 설치하여 큰 온도구배를 유지할 수 있도록 설계한 후, 일련의 실험으로 시험하여 그 유용성과 타당성을 검증하였다.

• 한국전기전자재료학회논문지
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• 제26권1호
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• pp.18-21
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• 2013

$SiO_2$ layer grown by rapid thermal oxidation and $SiN_x$ layer were used for passivating the surface of n-type silicon solar cell, instead of only $SiN_x$ layer generally used in photovoltaic industry. The rapid thermal oxidation provides the reduction of processing time and avoids bulk life time degradation during the processing. Improvement of 30 mV in Voc and $2.7mA/cm^2$ in Jsc was obtained by applying these two layers. This improvement led to fabrication of a large area ($239cm^2$) n-type solar cell with 17.34% efficiency. Internal quantum efficiency measurement indicates that the improvement comes from the front side passivation, but not the rear side, by using $SiO_2/SiN_x$ stack.

• 농촌계획
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• 제20권1호
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• pp.51-62
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• 2014

The composition of rural Green Village requires higher utilization of renewable energy in those selected rural villages. The purpose of this study is to select the best results of rural green villages when using photovoltaic power system(PV system). 10 different rural villages in Chubumyeon, Keumsan, Chungnam province, were selected as study villages. This study shows measured solar radiation data, a 20-year time series data, and GIS spatial analysis; and whose were used to predict the photovoltaic power generation. PV system is used as a form with capacity of 3kWp to use for personal and public houses. Generation data was calculated by the town, where the economics of the Green Village location analysis was performed; and the solar radiation's correction factor was calculated by the 20-year time series data and measured data by study villages. By applying to the data of DEM, slope and aspect of the study villages were found, therefore performed. Spatial analysis tools were performed by using solar radiation map's tools. Those data found were used to calculate the average needed energy every months. When used the properly calculated data, towns performed economical energy consumption in rural Green Village. Every study villages have showed very high potential for PV system. Sungdangri ranked at the first (7,401kWp/year), Jangdaeri follows behind to the second (7,203kWp/year) and Yogwangri at third (7,89kWp/year) which shows higher developed energy than other study villages. The areas covered of these three towns are as follows: Sungdangri at $33,300m^2$, Jangdaeri covers $18,000m^2$ and Yogwangri shows $46,800m^2$. With these results, analyzing the potentials using GIS spatial analysis before installation of PV system was possible. Also different villages and topography in study villages have showed various results by the area. For convenience and to shorten research time, it is possible and enough to use solar radiation tools when studying spatial analysis of solar radiation.

• 대한전자공학회논문지
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• 제13권2호
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• pp.23-27
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• 1976

p형과 n형 Si wafer의 111면위에 5x10-5mmHg의 진공내에서 SnO2-x박막을 Flash증착법으로 성장시킨 다음 산소분위기 속에서 열처리하여 Si-SnO2 heterojunction을 만들고 물성측정으로 부터 Energy bnad profile을 구하였다. 이 heterojunction은 양호한 정류성 Junction이며 400nm부터 1200nm까지 분광감도를 갖고 시정수가 -10-18sec로 고속광소자로 적합하며 Si p-n homojunction solar cell에 비하여 특성이 우수하고 제작이 간단하기 때문에 태양전지로 사용해도 손색이 없다. Si-SnO2 heterojunction was prepared by oxidzing at oxygen atmosphere SnO2-x Which made by Flith evaporation of SnO2 powder on III surface of p and n type Si single crystals. The energy band Profile of Si·SnO2 heterojunction was depicted from its physical properties. This heterojunction was very good rectifying junction, very sensitive in spectral response of Photovoltage at from 400nm to 1200nm, and -10-8sec of time contant. From above properties, this heterojunction was found ps good high speed photovoltaic device and solar cell.

• 한국전기전자재료학회논문지
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• 제29권12호
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• pp.847-852
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• 2016

Using both EVA and POE encapsulants, we fabricated polycrystalline Si PV modules and performed a set of reliability tests of PID, DH, TC, and Complex prior to outdoor installation. The power output with temperatures and insolation as well as I-V characteristics had been monitored under outdoor environments for 18 months. In the entire period, the total power of 3,576 kWh from POE PV modules was observed larger than 3,449 kWh from EVA PV modules by 3.5%. All the PV modules showed a 5.6~9.2% drop in the conversion efficiency. As for the solar power generation, the PV modules performed through PID, TC test revealed distinct difference in between EVA and POE for which the POE PV module produced more power by +11.4% and +6.6%, respectively, as measured in the 18th month. In addition, POE was proved to protect better the solar cells under PID influence.

• Current Photovoltaic Research
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• 제7권4호
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• pp.103-110
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• 2019

Cu(In,Ga)₃Se₅ (β-CIGS) has a band gap of 1.35 eV, which is an optimum value for high solar-energy conversion efficiency. The effects of Cu and Ga content on the cell performance were investigated previously. However, the effect of Se content on the cell performance is not well understood yet. In this work, β-CIGS films were fabricated by three-stage co-evaporation of elemental sources with various Se fluxes at the third stage instead of at all stages. The average composition of five samples was Cu_1.05(In_0.59,Ga_0.41)3Se_y, where the stoichiometric y value is 5.03 and the stoichiometric Se/metal (Se/M) ratio is 1.24. We varied the Se/metal ratio in a range from 1.18 to 1.28. We found that the best efficiency was achieved when the Se/M ratio was 1.24, which is exactly the stoichiometric value where the CIGS grains on the CIGS surface were tightly connected and faceted. With the optimum Se/M ratio, we were able to enhance the cell efficiency of a β-CIGS solar cell from 9.6% to 12.0% by employing a Na₂S post deposition treatment. Our results indicate that Na₂S post deposition treatment is very effective to enhance the cell efficiency to a level on par with that in α-CIGS cell.

• 한국산학기술학회논문지
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• 제11권8호
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• pp.2951-2957
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• 2010

태양광 산업에 있어서 PV추적 발전장치의 개발은 고정식 발전장치에 비하여 효율적이다. 추적식 발전장치는 단위면적당 태양의 일사량을 유지하고, 태양 전지의 효율을 최대화 한다. 따라서 정확하면서 저렴한 태양 위치 추적장치의 경제성을 개선하는 것과 투자 가격을 내리는 것이 중요하다. 본 연구는 태양위치를 감지하는데 센서를 사용하지 않고 천문학과 수학을 이용하여 1분($0.016^{\circ}$)이내의 태양의 위치 알고리즘에 관한 것이다. 이 논문에 제안된 알고리즘은 장치의 비용을 내리고 발전효율도 높여준다. 지금까지 알고리즘을 적용한 결과를 고려하면, 최대오차는 30초 ($0.008^{\circ}$)를 보인다. 그리고 이 알고리즘으로 적용한 태양광 발전시스템은 고정식 대비 평균 23W(약18%)의 이득을 보였다.

• Current Photovoltaic Research
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• 제3권2호
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• pp.54-60
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• 2015

ZnSnO thin films were deposited by atomic layer deposition (ALD) process using diethyl zinc ($Zn(C_2H_5)_2$) and tetrakis (dimethylamino) tin ($Sn(C_2H_6N)_4$) as metal precursors and water vapor as a reactant. ALD process has several advantages over other deposition methods such as precise thickness control, good conformality, and good uniformity for large area. The composition of ZnSnO thin films was controlled by varying the ratio of ZnO and $SnO_2$ ALD cycles. The ALD ZnSnO film was an amorphous state. The band gap of ZnSnO thin films increased as the Sn content increased. The CIGS solar cell using ZnSnO buffer layer showed about 18% energy conversion efficiency. With such a high efficiency with the ALD ZnSnO buffer and no light soaking effect, AlD ZnSnO buffer mighty be a good candidate to replace Zn(S,O) buffer in CIGSsolar cells.