• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.23 no.3
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• pp.361-366
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• 2012

This paper proposes a low power capacitor cross-coupled 5.2 GHz band low noise amplifier(LNA) using the current-reused topology with the TSMC 0.18 ${\mu}m$ CMOS process. The proposed 5.2 GHz band LNA uses a capacitor cross-coupled $g_m$-boosting method for reducing current flow of circuit and a current-reused topology to decrease total power dissipation. The parallel LC networks are used to reduce size of spiral inductors. The simulation results show high gain of 17.4 dB and noise figure(NF) of 2.7 dB for 5.2 GHz.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.20 no.1
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• pp.117-122
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• 2016

In this paper, we propose 24-GHz CMOS radio frequency (RF) power amplifier for short-range automotive collision avoidance radars. This circuit contains common source stage with inter-stages conjugate matching circuit as a class-A mode amplifier. The proposed circuit is designed using TSMC $0.13-{\mu}m$ mixed signal/RF CMOS process ($f_T/f_{MAX}=120/140GHz$). It operates at the supply voltage of 2V, and it is designed to have high power gain, low insertion loss and low noise figure in the low supply voltage. To reduce total chip area, the circuit used transmission lines instead of the bulky real inductor. The designed CMOS power amplifier showed the smallest chip size of $0.1mm^2$, the lowest power consumption of 40mW, the highest power gain of 26.5dB, the highest saturated output power of 19.2dBm and the highest maximum power-added efficiency of 17.2% as compared to recently reported results.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.17 no.2
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• pp.259-264
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• 2016

In this study, the properties of a patch antenna fed by a coplanar waveguide with ground (CPWG) and design method were studied. The antenna was impedance-matched to the CPWG feedline by adjusting the width, length, and position of the patch. To improve the frequency properties of the CPWG type antenna, patch length, patch width, patch position, and ground distance were simulated using HFSS (High Frequency Structure Simulator) simulation program. A CPWG antenna of 1.8 GHz for LTE band was designed and fabricated by photolithography on an FR4 substrate (dielectric constant of 4.4 and thickness of 0.8 mm). The fabricated antenna was analyzed using a network analyzer. The measured results agree well with the simulations, which confirmed the validity of this study. The fabricated CPWG antenna showed a center frequency, minimum return loss and -10dB bandwidth of 1.8GHz, -32.1dB, 22MHz and $50.2{\Omega}$ respectively. The proposed antenna is expected to be applicable to the LTE band.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.27 no.10
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• pp.941-944
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• 2016

This paper proposes 24 GHz power amplifier for automotive collision avoidance and surveillance short range radar using Samsung 65-nm CMOS process. The proposed circuit has a 2-stage differential power amplifier which includes common source structure and transformer for single to differential conversion, impedance matching, and power combining. The measurement results show 15.5 dB maximum voltage gain and 3.6 GHz 3 dB bandwidth. The measured maximum output power is 13.1 dBm, input $P1_{dB}$ is -4.72 dBm, output $P1_{dB}$ is 9.78 dBm, and maximum power efficiency is 17.7 %. The power amplifier consumes 74 mW DC power from 1.2 V supply voltage.

• Journal of Navigation and Port Research
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• v.31 no.10
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• pp.865-868
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• 2007

Recently, wireless LANs are often applied in home or office because of its various of convenience. Frequency range of wireless LANs specified by IEEE 802.11b is at 2.4 GHz. The bluetooth, the microwave oven, and the PDA(Personal Digital Assistants) uses, however, the same frequency band. So problems will be produced in these environments, such as multi-pass interference and system-to-system interference. These problems can be eliminated by using EM wave absorber. In this paper, we designed and fabricated EM wave absorber using MnZn-Ferrite, Sendust, and CPE( Chlorinated Polyethylene). The EM wave absorber with the ratio of material (MnZn-Ferrite : Sendust : CPE = 64 : 16 : 20 wt.%) has thickness of 3.7 mm and absorption ability more than 17 dB at 2.4 GHz.

• The Proceeding of the Korean Institute of Electromagnetic Engineering and Science
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• v.4 no.3
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• pp.11-17
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• 1993

An active diplexer can be realized by using a MESFET and 2-sections of asymmetrical coupled bandpass filter, where the admittance inverter parameters in equivalent circuit of asym- metrical coupled microstrip lines are given as a function of an fundamental design parameter of a bandpass filter. An experimental active diplexer was designed over 22 and 18 percent bandwidth centered at 9 GHz and 11 GHz respectively, and the design data was optimized by Super-Compact. The gain performance was $6.2\pm0.3$dB in each band of 8.3~9.6 GHz and 10.3~11.8 GHz The measured bandwidth of the active diplexer was closely matched to design data but measured gain was slightly lower (1.5 dB) than the designed value.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.18 no.9
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• pp.1098-1106
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• 2007

This paper presents active antenna diplexers implemented into an ultra-wideband CPW(Coplanar Waveguide) fed monopole antennas. The proposed active antenna diplexer is designed to direct interconnect the output port of a wideband antenna to the input port of two active(HEMT) devices, where the impedance matching conditions of the proposed active integrated antenna are optimized by adjusting CPW(Coplanar Waveguide) feed line to be the length of 1/20 $\lambda_0$(@5.8 GHz) in planar type wideband antenna. The measured bandwidth of the active integrated antenna shows the range from 2.0 GHz to 3.1 GHz and from 5.25 GHz to 5.9 GHz. The measured peak gains are 17.0 dB at 2.4 GHz and 15.0 dB at 5.5 GHz.

• Proceedings of the IEEK Conference
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• 2000.11a
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• pp.381-384
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• 2000

In this paper, we designed and fabricated a low noise amplifier which can be used in W-CDMA. For improving input VSWR and stability an emitter inductance series feedback was used, and for acquiring higer linearity at low current DC bais by-passing method was used. Fabricated low noise amplifier had 15.33 ㏈ power gain, 2.17 ㏈ NF, -9.53 ㏈ $S_{11}$ and -35.91 ㏈ $S_{22}$ at 2.16 GHz, and +5.34 ㏈m II $P_{ 3}$ at 10 MHz channel spacing.g.g.g.

• Proceedings of the IEEK Conference
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• 2003.07a
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• pp.621-624
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• 2003

In this paper, two Cascode Low Noise Variable Gain Amplifiers are proposed for wide dynamic range and constant Noise Figure for frequency range of 2.4GHz. Designed Variable Gain Low Noise Amplifier are for Wireless Local Area Network (WLAN) applications. A gain is higher than 17dB and the noise figure is approximately 1.3dB and the input VSWR is better than 2:1.

• Proceedings of the IEEK Conference
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• 2001.06a
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• pp.421-424
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• 2001

In this paper, We have designed and fabricated VCO in two way, the common source and common gate circuit for I local oscillator of 60 GHz wireless LAN system. The VCO employed a GaAs MESFET for negative resistance and a varactor diode for frequency tuning. The common gate VCO was measured the phase noise -112 dBc/Hz at the 1 MHz frequency offset. The output power and the second harmonic frequency suppression were 7.81 dBm and -29.3 dBc when tuning voltage was 3V, respectively. The total size of VCO was 28.6$\times$12.14 $\textrm{mm}^2$.