• Proceedings of the IEEK Conference
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• 2005.11a
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• pp.873-876
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• 2005

A low noise amplifier(LNA) using electro-magnetic field simulator is designed in standard 0.25um CMOS process. Integrated spiral inductor is simulated using EM field solver. Then LNA is simulated with active device, capacitor and simulated inductor by EM field solver. A S11 and S21 of -15.45dB and 17.8dB at 2.3GHz as simulation results was achieved. A Noise Figure is 2.92dB. And Measurements show a S11 and S21 of -12.4dB and 17.8dB at 2.3GHz. A Noise Figure of 3.3dB was achieved.

• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.3
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• pp.326-332
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• 2017

A switched VCO-based UWB transmitter for 3-5 GHz is implemented using $0.18{\mu}m$ CMOS technology. Using RF switch and timing control of DPGs, the uniform RF power and low power consumption are possible regardless of carrier frequency. And gate control of RF switch enables the undesired side lobe rejection sufficiently. The measured pulse width is tunable from 0.5 to 2 ns. The measured energy efficiency per pulse is 4.08% and the power consumption is 0.6 mW at 10 Mbps without the buffer amplifier.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.39A no.9
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• pp.563-565
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• 2014

Beam forming techniques are used to increase the efficiency of using frequency. In this paper we design and implement Butler matrix to be used for ISM band. The implemented Butler matrix has the insertion loss of maximum 6.7dB and the maximum phase shift error of $-6.51^{\circ}{\sim}7.17^{\circ}$ over 2.4~2.485GHz.

• Transactions on Electrical and Electronic Materials
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• v.17 no.2
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• pp.118-120
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• 2016

A coplanar waveguide employing periodic 3D coupling structures (CWP3DCS) was developed for application in miniaturized on-chip passive components on silicon radio frequency integrated circuits (RFIC). The CWP3DCS showed the shortest wavelength of all silicon-based transmission line structures that have been reported to date. Using CWP3DCS, a highly miniaturized impedance transformer was fabricated on silicon substrate, and the resulting device showed good RF performance in a broad band from 4.6 GHz to 28.6 GHz. The device as was 0.04 mm² in size, which is only 0.74% of the size of the conventional transformer on silicon substrate.

• Transactions on Electrical and Electronic Materials
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• v.17 no.2
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• pp.86-91
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• 2016

Ever increasing demand for microwave operated applications has cultivated need for high-performance universal systems capable of working on multi-bands. This objective can be realized using Multi-Dielectrics in RF MEMS capacitive switch. In this study, we present a detailed analysis of the effect of various dielectrics on switch performance. The design consists of a capacitive switch and performance is analyzed by changing the dielectric layers beneath the switch. The results are obtained using three different dielectrics including Silicon nitride (7.6), Hafnium dioxide (25) and Titanium oxide (50). Testing of proposed switch yields high isolation (- 87.5 dB) and low insertion loss (- 0.1 dB at 50 GHz) which is substantially better than the conventional switches. The operating bandwidth of the proposed switch (DC to 95 GHz) makes it suitable for wide band microwave applications.

• Journal of the Korean Magnetics Society
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• v.4 no.3
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• pp.208-213
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• 1994

Wide-band absorbency and small layer thickness are required in the high- performance microwave absorber. In order to reduce the thickness of the absorber, ferrite-iron-rubber composites were proposed and its properties were investigated. The increase in both real part of perrreability and permittivity of the composites were observed with addition of -Fe powder and this behavior results in the decrease of fm dm term. The matching thicknesses of ferrite-iron-ruber composites were relatively small(0.5~2.0 mm) in the frequency range of 3~17 GHz as comIBfed to than that of ferrite-rubbr composit.

• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.1
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• pp.42-47
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• 2017

This paper proposes a new series-coupled voltage-controlled oscillator (VCO). The proposed VCO consists of four current-reuse Armstrong VCOs (CRA-VCOs) coupled by four transformers. The series-coupling, current-reuse, and Armstrong topologies improve the phase noise performance by increasing the negative-Gm of the VCO core with half the current consumption of a conventional differential VCO. The proposed VCO consumes 6.54 mW at 9.78 GHz from a 1-V supply voltage. The measured phase noise is -115.1 dBc/Hz at an offset frequency of 1 MHz, and the FoM is -186.5 dBc/Hz. The frequency tuning range is from 9.38-10.52 GHz. The core area is $0.49mm^2$ in a $0.13-{\mu}m$ CMOS process.

• Journal of Korea Society of Industrial Information Systems
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• v.17 no.2
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• pp.1-9
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• 2012

Wireless sensor nodes are widely used for various applications such as environmental monitoring. In this paper, the RSSI and PER are measured for the indoor environment with the various interferences such as obstacles(concrete walls, steel doors) and the 2.4GHz wireless LAN interference. Also, the RSSI and PER are measured for the outdoor environments. From the measured values of the RSSI and PER, the guideline for the stable operation of the wireless sensor network is suggested.

• Journal of electromagnetic engineering and science
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• v.17 no.4
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• pp.197-201
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• 2017

In this paper, we present a novel design for a dual-band bandpass filter (BPF) based on the conventional second-order, open-loop BPF. By adding series resonant circuits to the open ends of the resonator, we can create two resonant modes from the even and odd modes. One pair of the even and odd modes constitutes the upper passband, while the other pair constitutes the lower passband. By adding another series resonant circuit to the open-loop resonator, we can control the bandwidth of either the upper passband or the lower passband. We can replace the series resonant circuits with simple microstrip line resonators. A dual-band BPF working at both Wi-Fi bands (2.4 GHz and 5.8 GHz bands) is designed based on the proposed method and is tested. The measured and simulated results show excellent agreement.

• Journal of the Korea Institute of Military Science and Technology
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• v.17 no.5
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• pp.629-636
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• 2014

In the proposed paper, we designed low phase noise frequency synthesizer for Ku-band. The proposed up-mixing frequency synthesizer consists of narrow local oscillation part and variable frequency oscillation part. To improve the phase noise of frequency synthesizer, we analyze how the configuration of frequency synthesizer affect the phase noise. The implemented frequency synthesizer reduce the phase noise. The phase noise is -95.18dBc/Hz at 7kHz frequency offset in 16GHz and -94.27dBc/Hz at 7kHz frequency offset in 16.125GHz.