• Journal of Biomedical Engineering Research
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• v.35 no.3
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• pp.62-67
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• 2014

The purpose of the study was to identify the effect of laser parameters on photocoagulation to maximize safety and efficacy during varicose vein treatment. CW and pulsed modes at 1470 nm were initially compared as a function of power on bovine liver tissue. In the pulsed mode, various parameters including repetition rate, duty cycle, and irradiation time were compared to evaluate tissue response during thermal treatment. The results demonstrated that CW and pulsed modes yielded almost similar coagulation development possibly due to shorter irradiation time of 5 sec. Regardless of laser mode, both repetition rate and duty cycle presented constant coagulation rate whereas longer irradiation time facilitated coagulation process.

• Proceedings of the Optical Society of Korea Conference
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• 2006.07a
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• pp.9-10
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• 2006

We report the realization of the Yb/Tm co-doped silica glass optical fiber amplifier operating at 1470 nm upon 980 nm pumping. The energy transfer coefficient from Yb to Tm was estimated using the threshold condition of the optical amplifier.

• ETRI Journal
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• v.27 no.4
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• pp.411-417
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• 2005

$Pr^{3+}-doped$ selenide glass optical fiber, which guarantees single-mode propagation of above at least 1310 nm, has been successfully fabricated using a Ge-Ga-Sb-Se glass system. Thermal properties such as glass transition temperature and viscosity of the glasses have been analyzed to find optimum conditions for fiber drawing. Attenuation loss incorporating the effects of an electronic band gap transition, Rayleigh scattering, and multiphonon absorption has also been theoretically estimated for the Ge-Ga-Sb-Se fiber. A conventional double crucible technique has been applied to fabricate the selenide fiber. The background loss of the fiber was estimated to be approximately 0.64 dB/m at 1650 nm, which can be considered fairly good. When excited at approximately 1470 nm, $Pr^{3+}-doped$ selenide fiber resulted in amplified spontaneous emission and saturation behavior with increasing pump power in a U-band wavelength range of 1625 to 1675 nm.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.24 no.11
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• pp.1470-1476
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• 2020

This paper describes a design of a lightweight security system-on-chip (SoC) suitable for the implementation of security protocols for IoT and mobile devices. The security SoC using Cortex-M0 as a CPU integrates hardware crypto engines including an elliptic curve cryptography (ECC) core, a SHA3 hash core, an ARIA-AES block cipher core and a true random number generator (TRNG) core. The ECC core was designed to support twenty elliptic curves over both prime field and binary field defined in the SEC2, and was based on a word-based Montgomery multiplier in which the partial product generations/additions and modular reductions are processed in a sub-pipelining manner. The H/W-S/W co-operation for elliptic curve digital signature algorithm (EC-DSA) protocol was demonstrated by implementing the security SoC on a Cyclone-5 FPGA device. The security SoC, synthesized with a 65-nm CMOS cell library, occupies 193,312 gate equivalents (GEs) and 84 kbytes of RAM.

• Proceedings of the KSRS Conference
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• 2003.11a
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• pp.1470-1472
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• 2003

Hyperion, as hyperspectral data, is carried on NASA’s EO-1 satellite, can be used in more subtle discrimination on forest cover, with 224 band in 360 ?2580 nm (10nm interval). In this study, Hyperion image is used to investigate the effects of topography on the classification of forest cover, and to assess whether the topographic correction improves the discrimination of species units for practical forest mapping. A publicly available Digital Elevation Model (DEM), at a scale of 1:25,000, is used to model the radiance variation on forest, considering MSR(Mean Spectral Ratio) on antithesis aspects. Hyperion, as hyperspectral data, is corrected on a pixel-by-pixel basis to normalize the scene to a uniform solar illumination and viewing geometry. As a result, the approach on topographic effect normalization in hyperspectral data can effectively reduce the variation in detected radiance due to changes in forest illumination, progress the classification of forest cover.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.87.2-87.2
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• 2012

고출력 반도체 레이저 다이오드는 발진 파장 및 광 출력에 따라 다양한 분야에 응용되고 있으며, 특히 발진파장이 808 nm 및 1470 nm 인 고출력 레이저 다이오드의 경우 재료가공, 펌핑용 광원 (DPSSL, 광섬유 레이저), 의료, 피부미용 (점 제거), 레이저 다이오드 디스플레이 등 가장 다양한 응용분야를 가진 광원 중의 하나라고 할 수 있다. 일례로 재료가공의 경우, 레이저 용접, 레이저 인쇄, 하드디스크의 레이저 텍스쳐링 등 그 응용분야는 무수히 많으며, 최근에는 미래 성장동력 사업의 하나로 중요한 이슈가 되는 태양전지에서 에지 분리 (edge isolation), ID 마킹, 레이저 솔더링 등에서 필수불가결한 광원으로 각광받고 있다. 808 nm 대역 In(Ga)AlAs quantum dots laser diode (QDLD) 성장을 위하여 In(Ga)AlAs QD active 와 In(Ga)AlAs QD LD 성장으로 크게 분류하여 여러 가지 test 실험을 수행하였다. 우선 In(Ga)AlAs QD LD 성장에 앞서 high power LD에 적용 가능한 GaAs/AlGaAs quantum well의 성장 및 전기 측정을 수행하여 그 가능성을 보았다. In(Ga)AlAs QD active layer의 효과적인 실험 조건 조절을 위해 QD layer는 sequential mithod (ex. n x (InGaAlAs t sec + InAs t sec + As 10 sec)를 사용하였다. In(Ga)AlAs QD active layer는 성장 온도, 각 sequence 별 시간, 각 source 양, barrier 두께 조절 및 타입변형, Arsenic flux 등의 조건을 조절하여 실험하였다. 또한 위에서 선택된 몇 가지 active layer 를 이용하여 In(Ga)AlAs QD LD 성장 조건 변화를 시도하였다.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.21 no.8
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• pp.1465-1470
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• 2017

In conventional MOSFETs, the silicon thickness is always larger than inversion layer, so that the drain induced barrier lowering (DIBL) is expressed as a function of oxide thickness and channel length regardless of silicon thickness. However, since the silicon thickness is fully depleted in the sub-10 nm low doped double gate (DG) MOSFET, the conventional SPICE model for DIBL is no longer available. Therefore, we propose a novel DIBL SPICE model for DGMOSFETs. In order to analyze this, a thermionic emission and the tunneling current was obtained by the potential and WKB approximation. As a result, it was found that the DIBL was proportional to the sum of the top and bottom oxide thicknesses and the square of the silicon thickness, and inversely proportional to the third power of the channel length. Particularly, static feedback coefficient of SPICE parameter can be used between 1 and 2 as a reasonable parameter.