• Bulletin of the Korean Space Science Society
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• 2006.10a
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• pp.52-52
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• 2006

Many spacecraft failures and anomalies have been attributed to energetic electrons in the Earth's magnetosphere. While the dynamics of these electrons have been studied extensively for several decades, the fundamental question of how they are accelerated is not fully resolved. Proposed theories have not been successful in explaining fast high energy increase such as REE (Relativistic electron enhancement). In this presentation, we show observations of energetic electron precipitation measured by the Korean satellite, STSAT-1 which simultaneously detect (100ev - 20 keV) and (170 - 360 keV) energy electrons at the 680 km orbit, when the RES event observed at the geosynchronous orbit on October 13, 2004. STSAT-1 observed intense electron precipitation in both energy ranges occurred in the midnight sector clearly demonstrating that electrons having wide energy band are injected from the plasma sheet. To make the balance between loss and injection, the injected electron flux should be also large. In this situation, the injected electrons can be trapped into the magnetosphere and produce REE, though they have low e-folding energies. We propose this plasma sheet injection might be the primary source of relativistic electron (1 MeV) flux increases.

• Journal of the Korean Vacuum Society
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• v.20 no.5
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• pp.367-373
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• 2011

It is described that the proton beam induces micro defects and electronic deep levels in Cz single crystal silicon. Enhance signal-to-noise ratio, Coincidence Doppler Broadening Positron Annihilation Spectroscopy has been applied to study of characteristics of p type and n type silicon samples. In this investigation the numerical analysis of the Doppler spectra was employed to the determination of the shape parameter, S, defined as the ratio between the amount of counts in a central portion of the spectrum and the total counts of whole spectrum. The samples were exposed by 4.0 MeV proton beams ranging from 0 to ${\sim}10^{14}$ ptls. The S-parameter values were increased as increasing the irradiated proton beam, that indicated the defects generate more.

• Journal of the Korean Vacuum Society
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• v.21 no.5
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• pp.225-232
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• 2012

It is described that the proton beam induceds micro-size defects and electronic deep levels in n or p type single crystal silicon. Positron lifetime and Coincidence Doppler Broadening Positron Annihilation Spectroscopy were applied to study of characteristics of p type and n type silicon samples. In this investigation the numerical analysis of the Doppler spectra was employed to the determination of the shape parameter, S, defined as the ratio between the amount of counts in a central portion of the spectrum and the total counts of whole spectrum. The samples were exposed by 3.98 MeV proton beams ranging between 0 to ${\sim}10^{14}$ particles. The S-parameter values strongly depend on the irradiated proton beam, that indicated the defects generate more. Positron lifetime shows that positrons trapped in vacancies and lifetime ${\tau}_2$ increased according to proton irradiation.

• Nuclear Engineering and Technology
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• v.51 no.8
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• pp.1983-1990
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• 2019

Spray deposited Molybdenum trioxide (MoO₃) thin film of thickness nearly 379 nm were irradiated with 200 MeV Ag¹⁵⁺ ion beam at different fluences (Ø) of 5 ×10¹¹, 1 × 10¹², 5 × 10¹² and 1 × 10¹³ ions/㎠. The X-ray diffraction (XRD) pattern of the pristine film confirms orthorhombic structure and the crystallinity decreased after irradiation with the fluence of 5 × 10¹¹ ions/㎠ due to irradiation induced defects and became amorphous at higher fluence. In pristine film, Raman modes at 665, 820, 996 cm^-1 belong to Mo-O stretching, 286 cm^-1 belong to Mo-O bending mode and those below 200 cm^-1 are associated with lattice modes. Raman peak intensities decreased upon irradiation and vanished completely for the ion fluence of 5 ×10¹² ions/㎠. The percentage of optical transmittance of pristine film was nearly 40%, while for irradiated films it decreased significantly. Red shift was observed for both the direct and indirect band gaps. The pristine film surface had densely packed rod like structures with relatively less porosity. Surface roughness decreased significantly after irradiation. The electrical transport properties were also studied for both the pristine and irradiated films by Hall effect. The results are discussed.

• Journal of the Korean Society of Radiology
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• v.16 no.5
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• pp.527-536
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• 2022

The radiation shielding characteristic of neutron shielding material has been studied as the preliminary study in order to design cosmic-ray shielding material. Specially, Soft Magnetic Material, known to be effective in EMP and radiation shielding, has been investigated to check if the material would be applicable to cosmic-ray shielding. In this work, thermal neutron shielding experiment was conducted and the Monte Carlo N-Particle(MCNP) was applied to employ skymap.dat, which is cosmic-ray data embedded in MCNP. As a result, polyethylene, borated polyethylene, and carbon nano tube, containing carbon or hydrogen, have been found to be effective in reduction of neutron flux below 20 MeV (including thermal, epithermal, evaporation). In contrast, the materials composed of iron such as SS316 and Soft Magnetic Material show a good shielding performance in the cascade energy range (above 20 MeV). Since Soft Magnetic Material is consisting of 13% of boron, it can also decrease thermal neutron flux, so it is expected that it would show a significant reduction on the entire range of neutron energy if the Soft Magnetic Material is used with hydrogen and carbon, so called low Z material.

• Nuclear Engineering and Technology
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• v.52 no.11
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• pp.2585-2593
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• 2020

Swift heavy ion (SHI) beam irradiation can generate desirable defects in materials by transferring sufficient energy to the lattice that favours huge possibilities in tailoring of materials. The effect of Ag¹⁵⁺ ion irradiation with energy 200 MeV on spray deposited V₂O₅ thin films of thickness 253 nm is studied at various ion doses from 5 × 10¹¹ to 1 × 10¹³ ions/㎠. The XRD results of pristine film confirmed orthorhombic structure of V₂O₅ and its average crystallite size was found to be 20 nm. The peak at 394 cm^-1 in Raman spectra confirmed O-V-O bonding of V₂O₅, whereas 917 cm^-1 arise because of distortion in stoichiometry by a loss of oxygen atoms. Raman peaks vanished completely above the ion fluence of 5 × 10¹² ions/㎠. Optical studies by UV-Vis spectroscopy shows decrement in transmittance with an increase in ion fluence up to 5 × 10¹² ions/㎠. The red shift is observed both in the direct and indirect band gaps until 5 × 10¹² ions/㎠. The surface topography of the pristine film revealed sheath like structure with randomly distributed spherical nano-particles. The roughness of film decreased and the density of spherical nanoparticles increased upon irradiation. Irradiation improved the conductivity significantly for fluence 5 × 10¹¹ ions/㎠ due to band gap reduction and grain growth.

• Nuclear Engineering and Technology
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• v.55 no.1
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• pp.201-208
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• 2023

The dependence of the electrical characteristics on the fast neutron fluence of an epitaxial 4H-SiC Schottky barrier diode (SBD) was investigated. The 30 MeV cyclotron was used for fast neutron irradiation. The neutron fluences evaluated through Monte Carlo simulation were in the 2.7 × 10¹¹ to 1.45 × 10¹³ neutrons/cm² range. Current-voltage and capacitance-voltage measurements were performed to characterize the samples by extracting the parameters of the irradiated SBDs. Neutron-induced defects in the epitaxial layer were identified and quantified using a deep-level transient spectroscopy measurement system developed at the Korea Atomic Energy Research Institute. As the neutron fluence increased from 2.7 × 10¹¹ to 1.45 × 10¹³ neutrons/cm², the concentration of the Z_1/2 defects increased by approximately 20 times. The maximum defect concentration was estimated as 1.5 × 10¹⁴ cm^-3 at a neutron fluence of 1.45 × 10¹³ neutrons/cm².

• Journal of the Korean Wood Science and Technology
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• v.41 no.6
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• pp.566-575
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• 2013

The fruits of Taxus cuspidata were collected, divided into seeds and fruits, and extracted with 95% EtOH. The extracts were evaporated under the reduced vacuum pressure, concentrated, then successively fractionated with a series of n-hexane, dichloromethane, ethyl acetate and water on a separatory funnel to get some freeze dried samples. A portion of the EtOAc (arils:1.65 g, seeds:1.04 g) and $H_2O$ (arils:7 g, seeds:10 g) soluble samples were chromatographed on a Sephadex column using MeOH-$H_2O$ (1:1, 1:3, 1:5, v/v), EtOH-hexane (3:1, v/v) mixture and 100% $H_2O$ as eluting solvents to isolate pure compounds from the fractions. The isolates were developed by cellulose TLC using t-BuOH-HOAc-$H_2O$ (TBA; 3:1:1, v/v/v) and 6% aqueous HOAc. Visualization was done under ultraviolet light and by spraying the vanillin-HCl-EtOH reagent (4.8:12:480, v/v/v). followed by heating. The structures of the isolates were characterized by $^1H$- and $^{13}C$-NMR, DEPT, 2D-NMR, LC/MS and EI-MS spectra. In addition to the NMR and MS spectra, acid hydrolysis and permethylation were used to determine the correct structure of the isolated sugar compound. Their structures were elucidated as (+)-catechin (1), (-)-epicatechin (2), (+)-gallocatechin (3), (-)-epigallocatechin (4) and ${\beta}$-D-fructofuranose-($2{\rightarrow}4$)-O-${\beta}$-D-glucopyranose($1{\rightarrow}4$)-O-${\alpha}$-D-glucopyranose ($1{\rightarrow}2$)-O-${\beta}$-D-fructofuranose (5) on the basis of the above experimental evidences.

• Electrical & Electronic Materials
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• v.9 no.4
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• pp.372-378
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• 1996

The phtoreflectance(PR) spectra of B ion implanted semi-insulating(SI) GaAs were studied. Ion implantation was performed by 150keV implantation energy and 1*10/aup 12/-10$^{15}$ ions/c $m^{2}$ doses. Electronic band structure was damaged by ion implantation with above 1*10$^{13}$ ions/c $m^{2}$ dose. When samples were annealed, " peak was observed at 30-40meV below band gap( $E_{g}$). It should be noted that this energy is close to the ionization energies of S $i_{As}$ , and GeAs in G $a_{As}$ which are also found as impurities in LEC GaAs, it is therefore possible that this feature is related to S $i_{As}$ , or G $e_{As}$ and B ions by implanted defect associated with them. From PR spectra of etched samples which is as-implanted by 1*10$^{14}$ and 1*10$^{15}$ ions/c $m^{2}$ dose, the depth of destroyed electronic band structure was from surface to 0.2.mu.m below surface.nic band structure was from surface to 0.2.mu.m below surface.

• Korean Journal of Materials Research
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• v.12 no.5
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• pp.387-390
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• 2002

A new approach of using double buffer layers of AlN and GaN for growth of GaN films on Si has been undertaken via molecular beam epitaxy using ammonia. The first buffers layer of AlN was grown using $N_2$plasma and the second of GaN was grown using ammonia. The surface roughness of the grown films was investigated by atomic force microscope and was compared with the normally grown films on sapphire. Double crystal x-ray rocking curve and low temperature photoluminescence techniques were employed for structural and optical properties examination. Donor bound exciton peak at 3.481 eV with full width half maximum of 41 meV was observed at 13K.