• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.12
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• pp.56-62
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• 2013

We present a rectifier for wireless power transmission using multiplier configuration in layout for MOSFETs which works at 13.56 MHz, designed to fit in CMOS process where conventionally used diodes are replaced with the cross-coupled MOSFETs. Full bridge rectifier structure without comparators is employed to reduce current consumption and to be working up to higher frequency. Multiplier configuration designed in layout reduces time delay originated from parasitic series resistance and shunt capacitance at each finger due to long connecting layout, leading to fast transition from on-state to off-state cross-coupled circuit structure and vice versa. The power conversion efficiency is significantly increased due to this fast transition time. The rectifier is fabricated in $0.11{\mu}m$ CMOS process, RF to DC power conversion efficiency is measured as 86.4% at the peak, and this good efficiency is maintained up to 600 MHz, which is, to our best knowledge, the highest frequency based on cross-coupled configuration.

• ETRI Journal
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• v.35 no.1
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• pp.158-161
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• 2013

This letter proposes a low-power current-steering digital-to-analog converter (DAC). The proposed DAC reduces the clock power by cutting the clock signal to the current-source cells in which the data will not be changed. The 10-bit DAC is implemented using a $0.13-{\mu}m$ CMOS process with $V_{DD}$=1.2 V. Its area is $0.21\;mm^2$. It consumes 4.46 mW at a 1-MHz signal frequency and 200-MHz sampling rate. The clock power is reduced to 30.9% and 36.2% of a conventional DAC at 1.25-MHz and 10-MHz signal frequencies, respectively. The measured spurious free dynamic ranges are 72.8 dB and 56.1 dB at 1-MHz and 50-MHz signal frequencies, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.143.1-143.1
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• 2015

An inductively coupled plasma source driven by 13.56MHz was prepared for the deposition of a-C:H thin film. Properties of the plasma source are investigated by fluid simulation including Navier-Stokes equations and home-made tuned single Langmuir probe. Signal attenuation ratios of the Langmuir probe at first and second harmonic frequency were 13.56Mhz and 27.12Mhz respectively. Dependencies of plasma parameters on process parameters were agreed with simulation results. Ar/CH4 plasma simulation results shown that hydrocarbon radical densities have their lowest value at the vicinity of gas feeding line due to high flow velocity. For input power density of 0.07W/cm3, CH radical density qualitatively follows electron density distribution. On the other hand, central region of the chamber become deficient in CH3 radical due to high dissociation rate accompanied with high electron density. The result suggest that optimization of discharge power is important for controlling deposition film quality in high density plasma sources.

• Transactions on Electrical and Electronic Materials
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• v.11 no.1
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• pp.20-23
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• 2010

The analog front end (AFE) of a radio frequency identification transponder using the ISO 14443 type A standard with a 100% amplitude shift keying (ASK) modulation is proposed in this paper and verified by circuit simulations and measurements. This AFE circuit, using a 13.56 MHz carrier frequency, consists of a rectifier, a modulator, a demodulator, a regulator, a power on reset, and a dynamically enabled digital phase locked loop (DPLL). The DPLL, with a charge pump enable circuit, was used to recover the clock of a 100% modulated ASK signal during the pause period. A high voltage lateral double diffused metal-oxide semiconductor transistor was used to protect the rectifier and the clock recovery circuit from high voltages. The proposed AFE was fabricated using the $0.18\;{\mu}m$ standard CMOS process, with an AFE core size of $350\;{\mu}m\;{\times}\;230\;{\mu}m$. The measurement results show that the DPLL, using a demodulator output signal, generates a constant 1.695 MHz clock during the pause period of the 100% ASK signal.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.267-267
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• 2012

최근 국내 반도체 장비 업체들에 의해서 차세대 반도체용 450 mm 웨이퍼 공정용 장비 개발이 진행 중에 있다. 반도체 산업은 계속해서 반도체 칩의 크기를 작게 하고, 웨이퍼 크기를 늘리면서 웨이퍼 당 칩수를 증가시켜 생산성을 향상해오고 있다. 현재 300 mm 웨이퍼에서 450 mm 웨이퍼를 도입하게 되면, 생산성 뿐만 아니라 30%의 비용절감과 50%의 cycle-time 단축이 기대되고 있다. 장비에 대한 이해와 공정에 대한 해석 능력을 위해 비용과 시간이 많이 들기 때문에 최근 컴퓨터를 활용한 수치 모델링이 진행되고 있다. 또한, 수치 모델링은 실험 결과와의 비교가 필수적이다. 본 연구에서는 450 mm 웨이퍼 공정용 장비의 전자밀도를 cut off probe를 통해 100 mTorr에 서 Ar 플라즈마를 파워에 따라 측정했다. 13.56 MHz 200 W, 500 W, 1,000 W로 입력 파워가 증가하면서 웨이퍼 중심에서 $6.0{\times}10^9#/cm^3$, $1.35{\times}10^{10}#/cm^3$, $2.4{\times}10^{10}#/cm^3$로 증가했다. 450 mm 웨이퍼 영역에서 전자 밀도의 불균일도는 각각 10.31%, 3.24%, 4.81% 였다. 또한, 이 450 mm 웨이퍼용 CCP 장비를 축대칭 2차원으로 형상화하고, 전극에 13.56 MHz를 직렬로 연결된 blocking capacitor ($1{\times}10^{-6}$ F/$m^2$)를 통해 인가할 수 있도록 상용 유체 모델 소프트웨어(CFD-ACE+, EXI corp)를 이용하여 계산하였다. 주요 전자-중성 충돌 반응으로 momentum transfer, ionization, excitation, two-step ionization을 고려했고, $Ar^+$와 $Ar^*$의 표면 재결합 반응은 sticking coefficient를 1로 가정했다. CFD-ACE+의 CCP 모델을 통해 Poisson 방정식을 풀어서 sheath와 wave effect를 고려하였다. Stochastic heating을 고려하지 않았을 때, 플라즈마 흡수 파워가 80 W, 160 W, 240 W에서 실험 투입 전력 200 W, 500 W, 1,000 W일 때와 유사한 반경 방향의 플라즈마 밀도 분포를 보였다. 200 W, 500 W, 1,000 W일 때의 전자밀도 분포는 수치 모델링과 전 범위에서 각각 10%, 3%, 2%의 오차를 보였다. 450 mm의 전극에 13.56 MHz의 전력을 인가할 때, 파워가 증가할수록 전자밀도의 최대값의 위치가 웨이퍼 edge에서 중심으로 이동하고 있음을 실험과 모델링을 통해 확인할 수 있었다.

• Journal of the Institute of Electronics and Information Engineers
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• v.51 no.9
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• pp.41-45
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• 2014

In this paper, a high-efficiency power amplifier is implemented by using a drain bias control circuit operated at low input power for WPT(Wireless Power Transfer). Adaptive bias control circuit was added to high-efficiency class-E amplifier. It was possible to obtain the overall improvement in efficiency by adjusting the drain bias at low input power. The proposed adaptive class-E amplifier is implemented by using the input and output matching network and serial resonant circuit for improvement in efficiency. Drain bias control circuit consists of a directional coupler, power detector, and operational amplifier for adjusting the drain bias according to the input power. The measured results show that output powers of 41.83 dBm were obtained at 13.56 MHz. At this frequency, we have obtained the power added efficiency(PAE) of 85.67 %. It was confirmed increase of PAE of an average of 8 % than the fixed bias from the low input power level of 0 dBm ~ 6 dBm.

• Journal of the Korea Society of Computer and Information
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• v.16 no.1
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• pp.11-18
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• 2011

This study developed a digital security device which power is on/off by the RFID card. This device is based on the wireless data transmit/receive circuits, built in RS-232C chip and applied to computer and other digital devices. We can check whether this device is operated or not by connecting the LED. In this system, 13.56MHz frequency circuit supplies power with ID card, and DC inputs check the proximity operating distance of the card field for verifying the existence of a card. The security level of this system is much stronger than that of a compared system[13]. Anyone cannot use the system without RFID card. All illegal access is prevented except for authorized path.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.13 no.3
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• pp.469-474
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• 2009

An RFID system consists of radio frequency tags attached to objects that need to be identified and one or more electromagnetic readers. Unlike the traditional bar code system, the great benefit of RFID technology is that it allows information to be read without requiring contact between the tag and the reader. For this contact-less feature, RFID technology in the near future will become an attractive alternative to bar code in many application fields. In almost all the 13.56MHz RFID systems, FSA algorithm is used for identifying multiple tags in the reader's identification range. In FSA algorithm, the tag identification time and system efficiency depend mainly on the number of tags and frame size. In this paper, we propose a tag number estimation scheme and a dynamic frame size allocation scheme based on the estimated number of tags.

• Proceedings of the Korean Information Science Society Conference
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• 2005.11a
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• pp.487-489
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• 2005

국내에서도 RFID(Radio Frequency IDentification) 기술 및 응용 분야가 확대되고 있어 이의 조기 구축을 통한 관련 기술 발전 핀 세계 시장 진출의 기회 확보를 위해 국제 표준에 부합하는 RFID용 주파수 할당 및 관련 기술기준 제반 규정을 정비할 필요성이 대두되었고 이에 2004년 5월 900MHz RFID용 주파수를 결정하였으며, 13.56MHz대와 2.45GHz RFID에 대한 기술 기준이 제정되어 있다. 그러나 새로운 기술 발전 및 응용에 부합되도록 시급히 개정되어야 하여 세계적으로 대두되고 있는 UHF대 RFID에 대한 기술 기준 제정도 국내외 시장의 관점에서 시급히 이루어져야 한다. 국내 RFID산업이 향후 IT분야를 선도할 가장 중요한 산업중의 하나로 인식되어 정부와 산업계가 모두 RFID기술개발을 추진하고 있는 시점에서 국내 기술기준안물 분석하고 기술기준 제정방향을 제안함으로써 가용한 주파수스펙트럼을 효율적으로 사용하고, 보다 빨리 상용화를 실현함으로써 RFID관련 초기 시장형성 및 활성화를 기대할 수 있다.

• Journal of electromagnetic engineering and science
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• v.13 no.4
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• pp.259-262
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• 2013

This paper analyzes the effects of metamaterial slabs with negative permeability when applied to a two-loop wireless power transmission (WPT) system, both in theory and electromagnetic (EM) simulations. The analysis of magnetic flux focusing provided here assumes quasi-magnetostatics or magnetostatics. The slab structures with negative permeability have been realized using the periodically arrayed ring resonators (RRs) at 13.36MHz. Some examples with ideal lossless slabs of -1, -2, and -3 showed a great enhancement of WPT efficiencies when compared with the free space cases. However, practical lossy slabs made of planar copper RRs did not show significant enhancement of WPT efficiencies due to the relatively high losses in the ring resonator (or in the slab consisting of RRs) near the resonant frequency.