• Proceedings of the Korea Information Processing Society Conference
• /
• 2010.04a
• /
• pp.3-5
• /
• 2010

최근 학습 패러다임은 문서 중심에서 지식 및 정보 기반으로 크게 변화하고 있다. 또한 유비쿼터스 사회로의 전환을 맞이하여 다양한 USN 기술 기반의 학습 연구가 활발히 진행 중이다. 그 중 RFID 기술 기반의 학습 연구에서는 대부분 유비쿼터스 학습 환경 구축에 관한 연구가 주를 이루고 있다. 따라서 실질적인 학습에 적용하는 연구의 결과는 미미하다. 본 논문에서는 RFID기술 기반의 다국어 학습기를 구현하였다. 태그를 인식하여 특정 사물을 사용자로 하여금 모국어뿐만 아니라 다국어로도 변역하여 여러 가지 언어들을 학습할 수 있게 지원하는 장치이다. 실험에서는 13.56Mhz의 RFID 및 PXA255A ARM보드 사용하여 학습기를 제작하여 효율성 테스트를 하였다.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.43 no.11 s.353
• /
• pp.37-47
• /
• 2006

This work proposes a 10b 25MS/s $0.8mm^2$ 4.8mW 0.13um CMOS A/D Converter (ADC) for high-performance wireless communication systems such as DVB, DAB and DMB simultaneously requiring low voltage, low power, and small area. A two-stage pipeline architecture minimizes the overall chip area and power dissipation of the proposed ADC at the target resolution and sampling rate while switched-bias power reduction techniques reduce the power consumption of analog amplifiers. A low-power sample-and-hold amplifier maintains 10b resolution for input frequencies up to 60MHz based on a single-stage amplifier and nominal CMOS sampling switches using low threshold-voltage transistors. A signal insensitive 3-D fully symmetric layout reduces the capacitor and device mismatch of a multiplying D/A converter while low-noise reference currents and voltages are implemented on chip with optional off-chip voltage references. The employed down-sampling clock signal selects the sampling rate of 25MS/s or 10MS/s with a reduced power depending on applications. The prototype ADC in a 0.13um 1P8M CMOS technology demonstrates the measured DNL and INL within 0.42LSB and 0.91LSB and shows a maximum SNDR and SFDR of 56dB and 65dB at all sampling frequencies up to 2SMS/s, respectively. The ADC with an active die area if $0.8mm^2$ consumes 4.8mW at 25MS/s and 2.4mW at 10MS/s at a 1.2V supply.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.02a
• /
• pp.478-478
• /
• 2012

Recently, there are many researches in order to increase the deposition rate (D/R) and improve film uniformity and quality in the deposition of microcrystalline silicon thin film. These two factors are the most important issues in the fabrication of the thin film solar cell, and for the purpose of that, several process conditions, including the large area electrode (more than 1.1 X 1.3 (m2)), higher pressure (1 ~ 10 (Torr)), and very high frequency regime (VHF, 40 ~ 100 (MHz)), have been needed. But, in the case of large-area capacitively coupled discharges (CCP) driven at frequencies higher than the usual RF (13.56 (MHz)) frequency, the standing wave and skin effects should be the critical problems for obtaining the good plasma uniformity, and the ion damage on the thin film layer due to the high voltage between the substrate and the bulk plasma might cause the defects which degrade the film quality. In this study, we will propose the new concept of the large-area multi-electrode (a new multi-electrode concept for the large-area plasma source), which consists of a series of electrodes and grounds arranged by turns. The experimental results with this new electrode showed the processing performances of high D/R (1 ~ 2 (nm/sec)), controllable crystallinity (~70% and controllable), and good uniformity (less than 10%) at the conditions of the relatively high frequency of 40 MHz in the large-area electrode of 280 X 540 mm2. And, we also observed the SEM images of the deposited thin film at the conditions of peeling, normal microcrystalline, and powder formation, and discussed the mechanisms of the crystal formation and voids generation in the film in order to try the enhancement of the film quality compared to the cases of normal VHF capacitive discharges. Also, we will discuss the relation between the processing parameters (including gap length between electrode and substrate, operating pressure) and the processing results (D/R and crystallinity) with the process condition map for ${\mu}c$-Si:H formation at a fixed input power and gas flow rate. Finally, we will discuss the potential of the multi-electrode of the 3.5G-class large-area plasma processing (650 X 550 (mm2) to the possibility of the expansion of the new electrode concept to 8G class large-area plasma processing and the additional issues in order to improve the process efficiency.

• 한국신재생에너지학회:학술대회논문집
• /
• 2010.06a
• /
• pp.97.1-97.1
• /
• 2010

유연금속기판위에 DC 마그네트론 스퍼터링을 이용하여 Ag/ZnO 이중구조의 후면반사막을 증착하고 Ag 표면조도 변화에 따른 후면반사막의 반사특성 변화와 플렉서블 비정질 실리콘 박막 태양전지의 셀 특성에 미치는 영향을 조사하였다. Substrate구조를 갖는 플렉서블 실리콘 박막 태양전지에서는 실리콘 박막 광흡수층의 상대적으로 낮은 광 흡수율로 인하여 입사광에 대한 태양전지 내에서의 광 산란 및 포획이 태양전지 효율을 증대시키는데 매우 중요한 역할을 하는 것으로 알려져 있다. 플렉서블 실리콘 박막 태양전지에서의 후면반사막은 광 흡수층에서 흡수되지 않는 입사광을 다시 반사시켜 광 흡수를 증대시키며 이때 후면반사막 표면에서 반사 빛을 효율적으로 산란시켜 이동경로를 증대시킴으로써 광 흡수율을 더욱 향상시킬 수 있다. 본 연구에서는 유연금속 기판위에 Ag와 ZnO:Al($Al_2O_3$ 2.5wt%) 타겟을 사용한 DC 마그네트론 스퍼터링법으로 Ag/AZO 이중구조의 후면반사막을 제조하고, Ag 박막의 표면형상 변화와 이에 따른 후면반사막의 반사도 변화를 비교, 분석하였다. 증착 조건 변화에 따른 표면 형상 및 반사 특성은 Atomic Force Mircroscope(AFM), Scanning electron miroscopy(SEM), UV-visible-nIR spectrometry를 통하여 분석하였다. 서로 다른 표면 거칠기를 갖는 후면반사막 위에 n-i-p구조의 a-Si:H 실리콘 박막 태양전지를 제조한 후 태양전지 동작 특성에 미치는 영향을 조사하였다. n,p층은 13.56MHz PECVD, i층은 60MHz VHF CVD를 사용하여 각각 제조 하였으며, Photo I-V, External Quantum Efficiency(EQE) 분석을 통하여 태양전지 특성을 조사 하였다. SEM 분석결과 공정 온도가 증가 할수록 Ag 박막의 표면 결정립 크기도 증가하였으며, AFM분석을 통한 Root-mean-square(Rms)값은 상온에서 $500^{\circ}C$로 증착온도가 증가함에 따라 6.62nm에서 46.64nm까지 증가하였다. Ag 박막의 표면 거칠기 증가에 따라 후면반 사막의 확산 반사도도 함께 증가하였다. 공정온도 $500^{\circ}C$에서 증착된 후면반사막을 사용하여 a-Si:H 태양전지를 제조하였을 때 상온에서 제조한 후면반사막에 비하여 단락전류밀도 (Jsc)값은 9.94mA/$cm^2$에서 13.36mA/$cm^2$로 증가하였으며, 7.6%의 가장 높은 태양전지 효율을 나타내었다.

• Proceedings of the KIEE Conference
• /
• 1996.07c
• /
• pp.1446-1449
• /
• 1996

Thin films of diamond-like carbon(DLC) have been deposited using a magnetron plasma-enhanced chemical vapor deposition(PECVD) method with an rf(13.56 MHz) plasma of $C_{3}H_{8}$. From the Langmuir probe I-V characteristics, it can be observed that increasing the magnetic field yields an increase of the temperature($T_e$) and density($N_e$) of electron. At a magnetic field of 82 Gauss, the estimated values of $T_e$ and $N_e$ are approximately $1.5\;{\times}\;10^5$ K(13.5 eV) and $1.3\;{\times}\;10^{11}\;cm^{-3}$, respectively. Such a highly dense plasma can be attributed to the enhanced ionization caused by the cyclotron motion of electrons in the presence of a magnetic field. On the other hand, the negative dc self-bias voltage($-V_{sb}$) decreases with an increasing magnetic field, which is irrespective of gas pressure in the range of $1{\sim}7$ mTorr. This result is well explained by a theoretical model considering the variation of $T_e$. Deposition rates of DLC films increases with a magnetic field. This may be due to the increased mean free path of electrons in the magnetron plasma. Structures of DLC films are examined by using various techniques such as FTIR and Raman spectroscopy. Most of hydrocarbon bonds in DLC films prepared consist of $sp^3$ tetrahedral bonds. Increasing the rf power leads to an enhancement of cross-linking of carbon atoms in DLC films. At approximately 140 W, the maximum film density obtained is about 2.4 $g/cm^3$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1999.05a
• /
• pp.469-472
• /
• 1999

CeO$_2$ thin films have used in wide applications such as SOI, buffer layer, antirflection coating, and gate dielectric layer. CeO$_2$takes one of the cubic system of fluorite structure and shows similar lattice constant (a=0.541nm) to silicon (a=0.543nm). We investigated CeO$_2$films as buffer layer material for nonvolatile memory device application of a single transistor. Aiming at the single transistor FRAM device with a gate region configuration of PZT/CeO$_2$ /P-Si , this paper focused on CeO$_2$-Si interface properties. CeO$_2$ films were grown on P-type Si(100) substrates by 13.56MHz RF magnetron sputtering system using a 2 inch Ce metal target. To characterize the CeO$_2$ films, we employed an XRD, AFM, C-V, and I-V for structural, surface morphological, and electrical property investigations, respectively. This paper demonstrates the best lattice mismatch as low as 0.2 % and average surface roughness down to 6.8 $\AA$. MIS structure of CeO$_2$ shows that breakdown electric field of 1.2 MV/cm, dielectric constant around 13.6 at growth temperature of 200 $^{\circ}C$, and interface state densities as low as 1.84$\times$10$^{11}$ cm $^{-1}$ eV$^{-1}$ . We probes the material properties of CeO$_2$ films for a buffer layer of FRAM applications.

• The Transactions of The Korean Institute of Electrical Engineers
• /
• v.60 no.2
• /
• pp.344-348
• /
• 2011

A layer of $TiO_2$ thin film less than ~200nm in thickness, as a blocking layer, was deposited by 13.56 MHz radio frequency magnetron sputtering method directly onto the anode electrode to be isolated from the electrolyte in dye-sensitized solar cells (DSCs). This is to prevent the electrons from back-transferring from the electrode to the electrolyte ($I^-/{I_3}^-$). The presented DSCs were fabricated with working electrode of F:$SnO_2$(FTO) glass coated with blocking $TiO_2$ layer, dye-attached nanoporous $TiO_2$ layer, gel electrolyte and counter electrode of Pt-deposited FTO glass. The effects of blocking layer were studied with respect to impedance and conversion efficiency of the cells. The, electrochemical impedances of DSCs using this electrode were $R_1$: 13.9, $R_2$: 15.0, $R_3$: 10.9 and $R_h$: $82{\Omega}$. The $R_2$ impedance related by electron movement from nanoporous $TiO_2$ to TCO showed lower than that of normal DSCs. The photo-conversion efficiency of prepared DSCs was 5.97% ($V_{oc}$: 0.75V, $J_{sc}$: 10.5 mA/$cm^2$, ff: 0.75) and approximately 1% higher than general DSCs sample.

• Korean Journal of Materials Research
• /
• v.33 no.11
• /
• pp.497-501
• /
• 2023

ZnO/Cu/ZnO (ZCZ) thin films were deposited at room temperature on a glass substrate using direct current (DC) and radio frequency (RF, 13.56 MHz) magnetron sputtering and then the effect of post-deposition electron irradiation on the structural, optical, electrical and transparent heater properties of the films were considered. ZCZ films that were electron beam irradiated at 500 eV showed an increase in the grain sizes of their ZnO(102) and (201) planes to 15.17 nm and 11.51 nm, respectively, from grain sizes of 13.50 nm and 10.60 nm observed in the as deposited films. In addition, the film's optical and electrical properties also depended on the electron irradiation energies. The highest opto-electrical performance was observed in films electron irradiated at 500 eV. In a heat radiation test, when a bias voltage of 18 V was applied to the film that had been electron irradiated at 500 eV, its steady state temperature was about 90.5 ℃. In a repetition test, it reached the steady state temperature within 60 s at all bias voltages.

• Korean Journal of Animal Reproduction
• /
• v.25 no.3
• /
• pp.207-217
• /
• 2001

Diagnosis and treatment of major reproductive failures were carried out for 836 dairy cows of 12 farms in Kimje area from May 1999 to May 2000. Reproductive failures were classified into four categories: uterine diseases, ovarian diseases, combination of uterine and ovarian diseases, and anestrus with corpus luteum (CL), based on the diagnosis by both rectal palpation and ultrasonography (SA 600, Medison, 5.OMHz transducer). 1. Of 102 cows examined, 15 cows were diagnosed as pregnant. Cows with real reproductive failures were therefore 87 cows and the rate of reproductive failures far all the cows of 12 farms was 10.4% (87/836). 2. Of 57 cows with reproductive failures, the cows with uterine diseases were 33 heads (37.9%), with ovarian diseases: 30 heads (34.5%), with combination form: 16 heads (18.4%), and with anestrus with CL: 8 heads (9.2%). 3. Of 87 cows with reproductive failures, 7 cows were slaughtered and 80 cows were treated by hormone or douche. The cows expressed estrus were 74 cows (92.5%, 74/80 heads) and 56 cows were pregnant (70.0%, 56/80 heads) following treatment. 4. The reproductive failures tended to be increased as the period proceeded from 30 days (2.3%, 2/87 heads) to over 120 days (56.3%, 49/87 heads) after parturition. 5. Associated other diseases to reproductive failures were foot diseases(5 cows), joint diseases (5 heads), urovagina (6 heads), and rectovaginal fistula (2 cows) and the rate of occurrence of associated diseases was 20.7% (18/87 heads). 6. No reproductive record was used in 7 farms of 12 farms and 5 farms had no play ground or not used for the cows. These results indicated that diagnosis fur reproductive failures by rectal palpation along with ultrasonography was more accurate than the conventional rectal palpation and brought better result of treatment for major types of reproductive failures. It was also indicated that non-uses of reproductive record and play ground were also important factors in occurrence of reproductive failures.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2016.02a
• /
• pp.341-341
• /
• 2016

The discovery of light emission in nanostructured silicon has opened up new avenues of research in nano-silicon based devices. One such pathway is the application of silicon quantum dots in advanced photovoltaic and light emitting devices. Recently, there is increasing interest on the silicon quantum dots (c-Si QDs) films embedded in amorphous hydrogenated silicon-nitride dielectric matrix (a-SiNx: H), which are familiar as c-Si/a-SiNx:H QDs thin films. However, due to the limitation of the requirement of a very high deposition temperature along with post annealing and a low growth rate, extensive research are being undertaken to elevate these issues, for the point of view of applications, using plasma assisted deposition methods by using different plasma concepts. This work addresses about rapid growth and single step development of c-Si/a-SiNx:H QDs thin films deposited by RF (13.56 MHz) and ultra-high frequency (UHF ~ 320 MHz) low-pressure plasma processing of a mixture of silane (SiH4) and ammonia (NH3) gases diluted in hydrogen (H2) at a low growth temperature ($230^{\circ}C$). In the films the c-Si QDs of varying size, with an overall crystallinity of 60-80 %, are embedded in an a-SiNx: H matrix. The important result includes the formation of the tunable QD size of ~ 5-20 nm, having a thermodynamically favorable <220> crystallographic orientation, along with distinct signatures of the growth of ${\alpha}$-Si3N4 and ${\beta}$-Si3N4 components. Also, the roles of different plasma characteristics on the film properties are investigated using various plasma diagnostics and film analysis tools.