• Journal of the Korean Vacuum Society
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• v.15 no.6
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• pp.630-636
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• 2006

Scale down of semiconductor gate pattern will make progress centrally line width into transistor according to the high integration and high density of flash memory semiconductor. Recently, the many researchers are in the process of developing research for using the ONO(oxide-nitride-oxide) technology for the gate pattern give body to line breadth of less 100 nm. Therefore, etch rate and etch profile of the line width detail of less 100 nm affect important factor in a semiconductor process. In case of increasing of the platen power up to 50 W at the ICP etcher, etch rate and PR selectivity showed good result when the platen power of ICP etcher has 100 W. Also, in case of changing of HBr gas flux at the platen power of 100 W, etch rate was decreasing and PR selectivity is increasing. We founded terms that have etch rate 320 nm/min, PR selectivity 3.5:1 and etch slope have vertical in the case of giving the platen power 100 W and HBr gas 35 sccm at the ICP etcher. Also notch was not formed.

• Journal of the Korean Vacuum Society
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• v.16 no.2
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• pp.105-109
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• 2007

In this paper, we fabricated TCO (transparent conductive oxide) electrode on flexible substrate in order to study effects of electrical and optical properties according to Al-doped ZnO(AZO) film thickness. The thickness of film was from 100 nm to 500 nm and was controlled by changing deposition time. We used High Resolution X-ray Diffractometer (HR-XRD) to analyze crystal structure and UV-visible spectrophotometer to measure property of optical transmittance, respectively. The surface images are obtained by using ESEM (Environment Scanning Electron Microscopy). In this experiment, all the AZO films deposited on flexible substrate show high transmittance over 90% and especially in the films with 400 nm and 500 nm thickness, the resistivity ($4.5{\times}10^{-3}\;{\Omega}-cm$) and optical bandgap energy (3.61 eV) are superior to the other films.

• Korean Journal of Metals and Materials
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• v.46 no.2
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• pp.88-96
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• 2008

Thermal evaporated 10 nm-$Ni_{50}Co_{50}$/(70 nm-poly)Si films were deposited to examine the energy saving properties of silicides formed by rapid thermal annealing at temperature ranging from 500 to $1,100^{\circ}C$ for 40 seconds. Thermal evaporated 10 nm-Ni/(70 nm-poly)Si films were also deposited as a reference using the same method for depositing the 10 nm-$Ni_{50}Co_{50}$/(70 nm-poly)Si films. A four-point probe was used to examine the sheet resistance. Transmission electron microscopy (TEM) and X-ray diffraction XRD were used to determine cross sectional microstructure and phase changes, respectively. UV-VIS-NIR and FT-IR (Fourier transform infrared spectroscopy) were used to examine the near-infrared (NIR) and middle-infrared (MIR) absorbance. TEM analysis confirmed that the uniform nickel-cobalt composite silicide layers approximately 21 to 55 nm in thickness had formed on the single and polycrystalline silicon substrates as well as on the 25 to 100 nm thick nickel silicide layers. In particular, nickel-cobalt composite silicides showed a low sheet resistance, even after rapid annealing at $1,100^{\circ}C$. Nickel-cobalt composite silicide and nickel silicide films on the single silicon substrates showed similar absorbance in the near-IR region, while those on the polycrystalline silicon substrates showed excellent absorbance until the 1,750 nm region. Silicides on polycrystalline substrates showed high absorbance in the middle IR region. Nickel-cobalt composite silicides on the poly-Si substrates annealed at $1,000^{\circ}C$ superior IR absorption on both NIR and MIR region. These results suggest that the newly proposed $Ni_{50}Co_{50}$ composite silicides may be suitable for applications of IR absorption coatings.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.06a
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• pp.1168-1170
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• 2005

Nanoimprint Lithography(NIL) has increasingly been recognized as a key manufacturing technology for nanosized feature. One of the most important task for nanoimprint lithography is to provide the imprinting stamp with low price. The Stamp fabricated with Si based material by e-beam lithography, RIE is extremely expensive and its throughput is very limited and PDMS replica is too soft to hold high imprinting pressure.(>5atm) In this study, we present the imprinting stamp which can be easily replicated from original mold and is based on PVC film. Replication of original Si mold to PVC film was done by Hot embossing technique, ($120^{\circ}C$ of Temperature, 20 atm applied) As small as 100nm patterns were successfully transferred into PVC film. The size of stamp was up to 100mm in diameter.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.8
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• pp.711-714
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• 2008

Metal-oxide-semiconductor (MOS) capacitors were fabricated to investigate the plasma damage caused by reactive ion etching (RIE) on (100) oriented silicon-on-insulator (SOI) substrates. The thickness of the top-gate oxide, SOI, and buried oxide layers were 10 nm, 50 nm, and 100 nm, respectively. The MOS/SOI capacitors with an etch-damaged SOI layer were characterized by capacitance-voltage (C-V) measurements and compared to the sacrificial oxidation treated samples and the reference samples without etching. The measured C-V curves were compared to the numerical results from corresponding 2-dimensional (2-D) structures by using a Silvaco Atlas simulator.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2014.10a
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• pp.773-776
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• 2014

In this work, analog performances of silicon nanowire MOSFET with different length and channel width have been measured. The channel widths are 20nm, 30nm, 80nm, 130nm and lengths are 250nm, 300nm, 350nm, 500nm. temperatures $30^{\circ}C$, $50^{\circ}C$, $75^{\circ}C$, $100^{\circ}C$ have been measured. The trans-conductance, early voltage, gain, drain current and mobility have been characterized as a function of temperature. The mobility has been enhanced with wider channel width but it has been reduced with longer length and higher temperature. The trans-conductance has been increased with wider channel width. The early voltage has been enhanced with increase of gate length and temperature but it has been reduced with wider width. Therefore, gain has been enhanced with increase of gate longer length and wider width but it has been reduced with higher temperature.

• Journal of the Mineralogical Society of Korea
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• v.25 no.2
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• pp.105-115
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• 2012

The consolidants have been widely used for the consolidation of decaying heritage stone surfaces. In this study, X-ray diffraction analysis, polarized and stereo-microscope and scanning electron microscope were used to study the surface characterization of granite, sandstone and marble, and to assess the efficiency and the effects of the developed condolidants in the field. The developed consolidants used in this experiment are 100%1T1G and 3%40nm/97%1T1G. The effects of consolidants are 3%40nm/97%1T1G${\gg}$100%1T1G in granite, 3%40nm/97%1T1G>100%1T1G in sandstone, and 3%40nm/97% 1T1G=100%1T1G in marble. The characteristics of rock surface when treated with consolidants show different result according to consolidantes type. This result of treating with consolidant can be used for the conservation of an decaying heritage stone.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.05a
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• pp.158-161
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• 2012

Raman Laser Radar system for the measurements of aerosol and water vapor concentration is developed. As a transmitting system, Nd:YAG laser with 3rd harmonic Generator and beam expander are used. The wavelength of transmitting laser is 355 nm. The receiving system is consists of 500 mm telescope, 3-channel Raman spectrometer, PMT, and signal processing module. The wavelengths of received signals are 355 nm. 387 nm, and 408 nm 이다. The measurable altitude of this system is about 3~4 km with spatial resolution of 100~200 m.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.46-47
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• 2008

Organic light-emitting diode is quick response speed, low power consumption and the self-interest has many advantages, such as insanity. So, organic light-emitting diode mechanism of light-emitting diode in order to more clearly understand the changes in the thickness of emitting materials for OLED characteristics of the simulation. emitting layer to a thickness of 10 [nm] ~ 100 [nm] changed the experiment, and hole transport layer 190 [nm] as a fixed. and emitting layer 10 [nm] ~ 100 [nm] to change the simulation results. Changes in the thickness of emitting layer gradually increased. depending on the emitting was 20 [nm] in the high 441 [lm / W] shows. and was gradually reduced. emitting layer 190 [nm] when fixed, hole transport layer, depending on changes in the thickness of 70 [nm] in the efficiency maximum value of 477 [lm / W], and was gradually reduced.

• 한국금형공학회:학술대회논문집
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• 2008.06a
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• pp.35-38
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• 2008

A pattern master and a Ni stamper for 50nm class of patterns are fabricated through e-beam lithography and Ni electroforming process. A model pattern set is designed, which is based on unit patterns of 50nm, 100nm, 150nm and 200nm in length and 50nm in width. The e-beam process is optimized to fabricate designed patterns with some parameters including dose, accelerating voltage, focal distance and developing time. For Ni electroforming to fabricate Ni stamper, a seed layer, a conducting layer, is deposited first on the pattern master fabricated by an e-beam lithography process. Ni, Ti/Ni and Cr are first tested to find optimal seed layer process. Currently the best result is obtained when adopting Cr deposited to be 100nm thick with continuous tilting motion of the master substrate during the deposition process.