A Study on the Fabrication of Ni Stamper for 50nm Class of Patterns

50nm급 패턴 니켈 스탬퍼 제작에 관한 연구

  • 유영은 (한국기계연구원 나노기계연구본부) ;
  • 오승훈 (부산대학교 나노융합기술학과) ;
  • 이관희 (서울산업대학교 나노아이티공학과) ;
  • 김선경 (서울산업대학교 금형설계학과) ;
  • 윤재성 (한국기계연구원 나노기계연구본부) ;
  • 최두선 (한국기계연구원 나노기계연구본부)
  • Published : 2008.06.24

Abstract

A pattern master and a Ni stamper for 50nm class of patterns are fabricated through e-beam lithography and Ni electroforming process. A model pattern set is designed, which is based on unit patterns of 50nm, 100nm, 150nm and 200nm in length and 50nm in width. The e-beam process is optimized to fabricate designed patterns with some parameters including dose, accelerating voltage, focal distance and developing time. For Ni electroforming to fabricate Ni stamper, a seed layer, a conducting layer, is deposited first on the pattern master fabricated by an e-beam lithography process. Ni, Ti/Ni and Cr are first tested to find optimal seed layer process. Currently the best result is obtained when adopting Cr deposited to be 100nm thick with continuous tilting motion of the master substrate during the deposition process.

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