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폴리머 기판상의 Al-doped ZnO 박막의 두께에 따른 특성 변화

Thickness Dependance of Al-doped ZnO Thin Film on Polymer Substrate

  • 김봉석 (성균관대학교 정보통신공학부) ;
  • 김응권 (성균관대학교 정보통신공학부) ;
  • 강현일 (성균관대학교 정보통신공학부) ;
  • 이규일 (성균관대학교 정보통신공학부) ;
  • 이태용 (성균관대학교 정보통신공학부) ;
  • 송준태 (성균관대학교 정보통신공학부)
  • Kim, B.S. (School of Information and Communication engineering Sungkyunkwan University) ;
  • Kim, E.K. (School of Information and Communication engineering Sungkyunkwan University) ;
  • Kang, H.I. (School of Information and Communication engineering Sungkyunkwan University) ;
  • Lee, K.I. (School of Information and Communication engineering Sungkyunkwan University) ;
  • Lee, T.Y. (School of Information and Communication engineering Sungkyunkwan University) ;
  • Song, J.T. (School of Information and Communication engineering Sungkyunkwan University)
  • 발행 : 2007.03.30

초록

본 논문에서는 AZO 박막 두께 변화에 따른 구조적, 전기적, 광학적 특성의 영향에 대하여 연구하기 위하여 폴리카보네이트(PC : polycarbonate) 기판 위에 DC 스퍼터링법으로 증착시간을 변화시켜 박막의 두께를 조절하였다. 박막의 두께는 100 nm에서 500 nm까지 100 nm단위로 실험하였으며, 제작된 AZO 박막의 비저항 특성은 four point probe system를 이용하여 측정하였고, 박막의 입자크기, 표면상태를 Environment Secondary Electron Microscopy (ESEM)으로 관찰하였다. 또한 AZO 박막의 결정상태를 조사하기 위하여 High Resolution X-Ray Diffractometer (HR-XRD)를 이용하였고 광학적 투과도는 UV-visible spectrophotometer를 이용하여 분석하였다. 실험 결과 모든 박막에서 90% 이상의 광투과도를 보였으며 400 nm과 500 nm 두께의 AZO 박막에서는 $4.5{\times}10^{-3}\;{\Omega}-cm$의 비저항과 3.61 eV의 광밴드갭 에너지를 보였다.

In this paper, we fabricated TCO (transparent conductive oxide) electrode on flexible substrate in order to study effects of electrical and optical properties according to Al-doped ZnO(AZO) film thickness. The thickness of film was from 100 nm to 500 nm and was controlled by changing deposition time. We used High Resolution X-ray Diffractometer (HR-XRD) to analyze crystal structure and UV-visible spectrophotometer to measure property of optical transmittance, respectively. The surface images are obtained by using ESEM (Environment Scanning Electron Microscopy). In this experiment, all the AZO films deposited on flexible substrate show high transmittance over 90% and especially in the films with 400 nm and 500 nm thickness, the resistivity ($4.5{\times}10^{-3}\;{\Omega}-cm$) and optical bandgap energy (3.61 eV) are superior to the other films.

키워드

참고문헌

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피인용 문헌

  1. Dependences of Sputtering Times on the Structural and Electrical Properties of ZnO/Ag/ZnO Thin Films on PET by DC Sputtering vol.12, pp.6, 2013, https://doi.org/10.1109/TNANO.2013.2274596
  2. Effect of Thickness on the Properties of Al Doped ZnO Thin Films Deposited by Using PLD vol.24, pp.7, 2011, https://doi.org/10.4313/JKEM.2011.24.7.568