• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2003년도 하계종합학술대회 논문집 II
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• pp.1125-1128
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• 2003

This paper presents the design method of a Colpitts type oscillator with coplanar waveguide(CPW) structures in the range of Ka-band frequency for transmitter and receiver modules. Series short stubs of CPW patterns provide inductances and capacitances in the range of Ka-band which can be expressed as a CLC-$\pi$ equivalent circuit. The experimentation has employed ro4003 substrates as a CPW substrate which has a dielectric constant of 3.38 and a signal and ground space of 100um. A method of momentum simulation for the CPW patterns has performed with an ADS software tool of Hewlett-Packard Corp. Inductance and capacitance circuits of a Colpitts oscillator was interconnected to a MESFET with CPW bend structures of including the input and output impedance matching circuits of the active transistor. Circuit parameters for impedance matching were determined through the network conversion to the equivalent length of CPW transmission lines by using T-network 1 $\pi$-network conversion circuit. A Colpitts oscillator was fabricated on the substrate of a area of 8.5mm x 17.4mm with a MESFET of Fujitsu FMM5704X and CPW series short stubs. The design suggested the possibility of realizing oscillators on a planar surface for the wireless system of tansmitter and receiver modules in the frequency range of 30GHz

• JSTS:Journal of Semiconductor Technology and Science
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• 제1권3호
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• pp.182-188
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• 2001

A solenoid-type MEMS inductor with a quality factor over 10 at 2 GHz has been developed using an electroplating technique. The integrated spiral inductor has a low Q factor due to substrate loss and skin effects. It also occupies a large area compared to the solenoid-type inductor. The direction of flux of the solenoid-type inductor is parallel to the substrate, which can lower the substrate loss and other interference with integrated passive components. To estimate the characteristics of the proposed inductor over a high frequency range, the 3D FEM (Finite Element Method) simulation is used by using the HFSS at the Ansoft corporation. The electroplated solenoid-type inductor is fabricated on a glass substrate step by step by using photolithography and copper electroplating. The fabrication process to improve the quality factor of the inductor is also developed. The achieved inductance varies within a range from 0.5 nH to 2.8 nH, and the maximum Q factor is over 10.

• 한국초전도학회:학술대회논문집
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• 한국초전도학회 2000년도 High Temperature Superconductivity Vol.X
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• pp.193-196
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• 2000

A new type low-pass filter design method based on a coupled line and transmission line theory is proposed to suppress harmonics by attenuation poles in the stop band. The design formula are derived using the equivalent circuit of a coupled transmission line. The new low-pass filter structure is shown to have attractive properties such as compact size, wide stop band range and low insertion loss. The seventh-order low-pass filter designed by present method has a cutoff frequency of 0.9 CHz with a 0.01 dB ripple level. The coupled line type low-pass filter with strip line configuration was fabricated by using a high-temperature superconducting (HTS : YBa$_2$Cu$_3$O$_{7-{\delta}}$ thin film on MgO(100) substrate. Since the HTS coupled tine type low-pass filter was proposed with five attenuation poles in stop band such as 1.8, 2.5, 4, 5.5, 6.2 GHz. The fabricated low-pass filter has improved the attenuation characteristics up to seven times of the cutoff frequency.

• Journal of Electrical Engineering and Technology
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• 제3권4호
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• pp.566-570
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• 2008

Vertical nanowire SGFETs(Surrounding Gate Field Effect Transistors) provide full gate control over the channel to eliminate short channel effects. This paper presents design and characterization of a differential pair amplifier using NMOS and PMOS SGFETs with a 10nm channel length and a 2nm channel radius. The amplifier dissipates $5{\mu}W$ power and provides 5THz bandwidth with a voltage gain of 16, a linear output voltage swing of 0.5V, and a distortion better than 3% from a 1.8V power supply and a 20aF capacitive load. The 2nd and 3rd order harmonic distortions of the amplifier are -40dBm and -52dBm, respectively, and the 3rd order intermodulation is -24dBm for a two-tone input signal with 10mV amplitude and 10GHz frequency spacing. All these parameters indicate that vertical nanowire surrounding gate transistors are promising candidates for the next generation high speed analog and VLSI technologies.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.196-197
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• 2005

The $ZnNb_2O_6$ ceramics with 3wt% CuO and $B_2O_2$(1,3,5wt%) were prepared by the conventional mixed oxide method. The ceramics were sintered at the temperature of $1000^{\circ}C\sim1050^{\circ}C$ for 3hr. in air. The structural properties were investigated with sintering temperature by XRD and SEM. Also, the microwave dielectric properties were investigated with sintering temperature. Increasing the sintering temperature, the peak of second phase ($Cu_3Nb_2O_8$) was increased. But no significant difference was observed as sintering temperature. In the $ZnNb_2O_6$ ceramics with 3wt% CuO and 5wt% $B_2O_3$ sintered at $1025^{\circ}C$ for 3hr, the dielectric constant, quality factor, temperature coefficient of the resonant frequency were 22.92, 20,271GHz, -14.27ppm/$^{\circ}C$, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1996년도 춘계학술대회 논문집
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• pp.292-294
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• 1996

Dielectric properties were investigated at Mn doped 0.17($Ba_{0.53}$, $Pb_{0.47}$)0-$0.16Nd_2O_3$-$0.67TiO_2$ system in microwave frequency. It was observed that dielectric constant of 90.1, quality factor of 1320 (at 3.8GHz) and temperature coefficient of resonance frequency 2.3 ppm/$^{\circ}C$ for 0.5wt% Mn doped 0.17($Ba_{0.53}$, $Pb_{0.47}$)0-$0.16Nd_2O_3$-$0.67TiO_2$ system in sintering condition $1290^{\circ}C$/2hr. The quality factor increase due to the compensation effect of Mn ions yp to 0.5wt% and the decrease due to the interface relaxation effect. The temperature coefficient of resonance frequency increases to negative direction with increasing the amounts of Mn.

• 한국통신학회논문지
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• 제33권6C호
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• pp.498-504
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• 2008

본 논문에서는 OFDM 통신 시스템을 위한 효율적인 신호처리 하드웨어 플랫폼을 제안한다. 하드웨어 플랫폼은 신호처리자원으로 한 개의 FPGA와 8,000 MIPS의 성능을 갖는 두 개의 DSP 프로세서를 내장하고 있으며, 최대 125 MHz의 샘플링 속도를 지원하는 두 채널의 AD와 DA 변환기를 내장하고 있다. 또한, 유연한 데이터 버스 구조로 설계되어 OFDM 통신 시스템을 위한 다양한 신호처리 알고리즘을 하드웨어로 구현하여 실험적으로 검증할 수 있다. 개발된 신호처리 하드웨어 플랫폼을 이용하여 IEEE 802.16 OFDM 소프트웨어 모뎀을 실시간 처리 가능하도록 구현하여, 개발된 신호처리 하드웨어 플랫폼의 효율성을 검증하였다.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2006년도 하계종합학술대회
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• pp.505-506
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• 2006

In this paper, the linearization technique for CMOS low-noise amplifier (LNA) using the derivative superposition method through the multiple gated transistors configuration is presented. LNA based on 0.13um RF CMOS process has been implemented with a modified cascode configuration using multiple gated common source transistors to fulfill a high linearity. Compared with a conventional cascode type LNA, the third order input intercept point (IIP3) per DC power consumption (IIP3/DC) is improved by 3.85 dB. The LNA achieved 2.5-dBm IIP3 with 13.4-dB gain, 3.6 dB NF at 2.4 GHz consuming 8.56 mA from a 1.5-V supply.

• 천문학회보
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• 제38권1호
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• pp.53-53
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• 2013

We present preliminary results of far-infrared(FIR) study of the supernova remnant(SNR)s in the Large Magellanic Cloud using the Herschel HERITAGE (HERschel Inventory of The Agents of Galaxy Evolution) data set. HERITAGE provides FIR data covering the entire LMC at 100,160, 250, 350, and 500 um. In order to confirm FIR emission associated with SNRs, we refer to Magellanic Cloud Emission-Line Survey (MCELS) H-alpha & SII data, Spitzer surveying the Agents of a Galaxy's Evolution (SAGE) Multiband Imaging Photometer (MIPS) 24um & 70um data, Chandra Supernova Remnants Catalog, and ATCA 4.8GHz continuum images of Dickel et al. (2005). Among 47 SNRs in the LMC, 7 SNRs show associated FIR emission. We present multi-wavelength view of 5 SNRs; DEM L249, N49, N63A, N132D, and the SNR in N4. N49 and N132D show morphological correlation in FIR and X-ray, suggesting that the FIR emission is from dust grains collisionally heated by X-ray emitting plasma. The FIR emission of N63A resembles H-alpha emission, which implies that the FIR line radiation could be dominant. The FIR images of the rest two objects, DEM L249 and SNR in N4, show no correlation to the other-waveband images.

• Journal of electromagnetic engineering and science
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• 제14권4호
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• pp.411-414
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• 2014

A switch is one of the most useful circuits for controlling the path of signal transmission. It can be added to digital circuits to create a kind of gate-level device and it can also save information into memory. In RF subsystems, a switch is used in a different way than its general role in digital circuits. The most important characteristic to consider when designing an RF switch is keeping the isolation as high as possible while also keeping insertion loss as low as possible. For high isolation, we propose leakage signal cancellation and inductive switching for designing a singlepole double-throw (SPDT) RF switch. By using the proposed method, an isolation level of more than 23 dB can be achieved. Furthermore, the heterojunction bipolar transistor (HBT) process is used in the RF switch design to keep the insertion loss low. It is demonstrated that the proposed RF switch has an insertion loss of less than 2 dB. The RF switch operates from 1 to 8 GHz based on the $0.18-{\mu}m$ SiGe HBT process, taking up an area of $0.3mm^2$.