• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.184-185
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• 2006

Two-step growth to incorporate the Mg atoms in the ZnO nanorods fabricate by thermal evaporation process and also utilized the ZnO film as a template. In the first step of low temperature, Zn seed metals with low melting temperature formed the droplet, and then MgZnO ternary nanorods were grown by injecting oxygen and evaporating Mg atoms in high temperature process of the second step. The vertical growth of the MgZnO nanorods with large-area distribution and uniformity was successfully performed on the ZnO template. We investigated the shape of the vertically grown 1-D MgZnO nanorods and characterized the optical and crystal properties. We confirmed the incorporation of Mg atoms by the EDS and PL spectrum.

• Journal of the Korean Vacuum Society
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• v.22 no.1
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• pp.20-25
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• 2013

ZnO:Al thin films deposited by RF magnetron sputtering were post-annealed and the electrical and optical properties of ZnO:Al thin films were investigated before and after anneling. We confirmed that the ZnO:Al thin film was affected by post-annealing temperature. As post-annealing temperature increases, crystallinity and transmittance in visible area (400~800 nm) of ZnO:Al thin films decreased. While sheet resistance of thin films increased sharply with increasing to $400^{\circ}C$. This result is due to reduce of carrier concentration caused by absorption of $O_2$ or $N_2$ at surface of thin film.

• Bulletin of the Korean Chemical Society
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• v.33 no.6
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• pp.1993-1997
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• 2012

Mg-doped ZnO one-dimensional (1D) nanostrutures were synthesized by using a thermal evaporation technique. The morphology, crystal structure, and sensing properties of the Mg-doped ZnO nanostructures functionalized with Pt to CO gas at $100^{\circ}C$ were examined. The diameters of the 1D nanostructures ranged from 80 to 120 nm and that the lengths were up to a few tens of micrometers. The gas sensors fabricated from multiple networked Mg-doped ZnO nanowires functionalized with Pt showed enhanced electrical response to CO gas. The responses of the nanowires were improved by approximately 70, 69, 111, and 81 times at CO concentrations of 10, 25, 50, and 100 ppm, respectively. Both the response and recovery times of the nanowire sensor for CO gas sensing were not nearly changed by Pt functionalization. It also appeared that the Mg doping concentration did not influence the sensing properties of ZnO nanowires as strongly as Pt-functionalization. In addition, the mechanism for the enhancement in the CO gas sensing properties of Mg-doped ZnO nanowires by Pt functionalization is discussed.

• Korean Journal of Mineralogy and Petrology
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• v.34 no.3
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• pp.177-191
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• 2021

The Zhenzigou Pb-Zn deposit, one of the largest Pb-Zn deposit in the northeast of China, is located at the Qingchengzi mineral field in Jiao Liao Ji belt. The geology of this deposit consists of Archean granulite, Paleoproterozoinc migmatitic granite, Paleo-Mesoproterozoic sodic granite, Paleoproterozoic Liaohe group, Mesozoic diorite and monzoritic granite. The Zhenzigou deposit which is a strata bound SEDEX or SEDEX type deposit occurs as layer ore and vein ore in Langzishan formation and Dashiqiao formation of the Paleoproterozoic Liaohe group. Based on mineral petrography and paragenesis, dolomites from this deposit are classified three type (1. dolomite (D₀) as hostrock, 2. dolomite (D₁) in layer ore associated with white mica, quartz, K-feldspar, sphalerite, galena, pyrite, arsenopyrite from greenschist facies, 3. dolomite (D₂) in vein ore associated with quartz, apatite and pyrite from quartz vein). The structural formulars of dolomites are determined to be Ca_1.00-1.03Mg_0.94-0.98Fe_0.00-0.06As_0.00-0.01(CO₃)₂(D₀), Ca_0.97-1.16Mg_0.32-0.83Fe_0.10-0.50Mn_0.01-0.12Zn_0.00-0.01Pb_0.00-0.03As_0.00-0.01(CO₃)₂(D₁), Ca_1.00-1.01Mg_0.85-0.92Fe_0.06-0.11 Mn_0.01-0.03As_0.01(CO₃)₂(D₂), respectively. It means that dolomites from the Zhenzigou deposit have higher content of trace elements compared to the theoretical composition of dolomite. Feo and MnO contents of these dolomites (D₀, D₁ and D₂) contain 0.05-2.06 wt.%, 0.00-0.08 wt.% (D₀), 3.53-17.22 wt.%, 0.49-3.71 wt.% (D₁) and 2.32-3.91 wt.%, 0.43-0.95 wt.% (D₂), respectively. The dolomite (D₁) from layer ore has higher content of these trace elements (FeO, MnO, ZnO and PbO) than dolomite (D₀) from hostrock and dolomite (D₂) from quartz vein. Dolomites correspond to Ferroan dolomite (D₀ and D₂), and ankerite and Ferroan dolomite (D₁), respectively. Therefore, 1) dolomite (D₀) from hostrock is a Ferroan dolomite formed by marine evaporative lagoon environment in Paleoproterozoic Jiao Liao Ji basin. 2) Dolomite (D₁) from layer ore is a ankerite and Ferroan dolomite formed by hydrothermal metasomatism origined metamorphism (greenschist facies) associated with Paleoproterozoic intrusion. 3) Dolomte (D₂) from quartz vein is a Ferroan dolomite formed by hydrothermal fluid origined Mesozoic intrusion.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.1
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• pp.22-28
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• 2009

We investigated the sintering and electric properties of ZnO-1.0 at% $TeO_2$ (ZT1) and 1.0 at% Mn-doped ZT1(ZT1M1) system. $TeO_2$ itself melts at $732^{\circ}C$ in air but forms the $ZnTeO_3$ or $Zn_2Te_3O_8$ phase with ZnO as increasing temperature and therefore retards the densification of ZnO to $1000^{\circ}C$. In ZT1M1 system, also, the densification of ZnO was retarded up to $1000^{\circ}C$ and then reached > 90% of theoretical density above $1100^{\circ}C$. It was found that a good varistor characteristics(nonlinear coefficient $a{\sim}60$) were developed in ZT1M1 system sintered at $1100^{\circ}C$ due to Mn which known as improving the nonlinearity of ZnO varistors. The results of C-V characteristics such as barrier height (${\Phi}_b$), donor density ($N_D$), depletion layer (W), and interface state density ($N_t$) in ZT1M1 ceramics were $1.8{\times}10^{17}cm^{-3}$, 1.6 V, 93 nm, and $1.7{\times}10^{12}cm^{-2}$, respectively. Also we measured the resistance and capacitance of grain boundaries with temperature using impedance and electric modulus spectroscopy. It will be discussed about the stability and homogeneity of grain boundaries using distribution parameter ($\alpha$) simulated with the Z(T)"-logf plots.

• Proceedings of the KIEE Conference
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• 1999.11d
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• pp.1003-1007
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• 1999

This paper is reported for the stability of ZnO-$Pr_{6}O_{11}-CoO-Er_{2}O_{3}$ based ceramic varistors with $Er_{2}O_{3}$ added in the addition range 0.0 to 2.0 mol%. The varistors sintered at $130^{\circ}C$ exhibited abrupt positive current creep phenomena, which accompany thermal run away within short times, even under weak d.c. stress. As a result, these varistors were completely degraded. On the contrary, the stability of varistors sintered at $1350^{\circ}C$ was far better than that of $1300^{\circ}C$. In particular, the varistor containing 0.5 mol% $Er_{2}O_{3}$ showed a excellent stability, which the variation rate of the varistor voltage, the nonlinear coefficient, and leakage current is below 1%, 2%, and 3.5%, respectively, even under more severe d.c. stress, such as ($0.8V_{1mA}/90^{\circ}C/12h$) + ($0.85V_{1mA}/115^{\circ}C/12h$) + ($0.9V_{1mA}/120^{\circ}C/12h$) + ($0.9V_{1mA}/150^{\circ}C/12h$). Consequently, it is estimated that the basic composition of ZnO-$Pr_{6}O_{11}-CoO-Er_{2}O_{3}$ based varistor contain 0.5 mol% $Er_{2}O_{3}$ will be used to the fabrication of the varistors for high performance and stability in a forthcoming.

• Journal of the Korean Vacuum Society
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• v.17 no.1
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• pp.40-45
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• 2008

We present the effect of Ga-doping on the electrical, structural and optical properties of ZnO layers with a thickness of ${\sim}500nm$ deposited on glass substrates. Polycrystalline ZnO and Ga-doped ZnO (GZO) layers were deposited by radio frequency (rf) magnetron sputtering at room temperature. Based on the X-ray diffraction (XRD) and transmission electron microscopy (TEM) data, the crystalline quality of Ga-doped ZnO film was improved and GZO film has a preferred orientation along with the (002) crystal direction. The transmittance of the GZO film was enhanced by 10% in the visible region from that of the ZnO film. From photoluminescence (PL) data, the ratio of intensity of near band edge (NBE) emission to deep level (DL) emission was as high as 2.65:1 and 1.27:1 in the GZO and ZnO films, respectively. The res istivities of GZO and ZnO films were measured to be 1.27 and 1.61 $\Omega{\cdot}cm$, respectively. The carrier concentrations of ZnO and GZO film were approximately 1018 and 1020 $cm^2$/Vs, respectively. Based on our experimental results, the Ga-doping improves the electrical, structural and optical properties of ZnO film with potential application.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.2
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• pp.83-86
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• 2013

The optical properties of ZnO thin film have been studied using photoluminescence(PL) spectroscopy with the change of sample temperatures from 10 K to 290 K. The spectrum at 10 K showed the characteristic emission lines of ZnO which were as follows: free exciton(FX) at 3.369 eV, neutral donor-bound exciton($D^0X$) at 3.360 eV, two electron satellite(TES) at 3.332 eV, $D^0X$-1LO at 3.289 eV, and donor-acceptor pair(DAP) transiton at 3.217 eV. From the spectral evolution with temperatures, two features could be identified as temperature went higher: (1) the bound excitons changed gradually into free excitons, (2) DAP turned into free electron-acceptor transition(e,$A^0$). The PL intensity of free exciton increased with the increase of temperatures, which was accompanied by the decrease of the intensity of bound excitions and bound excition-related transitons such as TES and $D^0X$-1LO. At 80 K DAP transition disappeared, while (e,$A^0$) transition started to appear at 30 K.

• Advances in nano research
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• v.1 no.1
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• pp.43-58
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• 2013

Zinc oxide (ZnO) is a unique semiconductor material that exhibits numerous useful properties for dye-sensitized solar cells (DSSCs) and other applications. Various thin-film growth techniques have been used to produce nanowires, nanorods, nanotubes, nanotips, nanosheets, nanobelts and terapods of ZnO. These unique nanostructures unambiguously demonstrate that ZnO probably has the richest family of nanostructures among all materials, both in structures and in properties. The nanostructures could have novel applications in solar cells, optoelectronics, sensors, transducers and biomedical sciences. This article reviews the various nanostructures of ZnO grown by various techniques and their application in DSSCs. The application of ZnO nanowires, nanorods in DSSCs became outstanding, providing a direct pathway to the anode for photo-generated electrons thereby suppressing carrier recombination. This is a novel characteristic which increases the efficiency of ZnO based dye-sensitized solar cells.

• Journal of the Korean institute of surface engineering
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• v.56 no.2
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• pp.147-151
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• 2023

Transparent ZnO (100 nm thick) and ZnO/Ti/ZnO (ZTZ) films were prepared with radio frequency (RF) and direct current (DC) magnetron sputtering on the glass substrate at room temperature. During the ZTZ film deposition, the thickness of the Ti interlayer was varied, such as 6, 9, 12, and 15 nm, while the thickness of ZnO films was kept at 50 nm to investigate the effect of the Ti interlayer on the crystallization and opto-electrical performance of the films. From the XRD pattern, it is concluded that the 9 nm thick Ti interlayer showed some characteristic peaks of Ti (200) and (220), and the grain size of the ZnO (002) enlarged from 13.32 to 15.28 nm as Ti interlayer thickness increased. In an opto-electrical performance observation, ZnO single-layer films show a figure of merit of 1.4×10^-11 Ω^-1, while ZTZ films with a 9 nm-thick Ti interlayer show a higher figure of merit of 2.0×10^-5 Ω^-1.