• 제목/요약/키워드: 1/f Noise

검색결과 418건 처리시간 0.025초

ISO 140-11(경량 바닥구조의 바닥충격음 저감량 실험실 측정방법)의 제정동향 (Standardization Activity of ISO/TC 43/SC 2/WG 22 Measurement of impact sound improvement of light-weight floors)

  • 장길수;정광용;김선우
    • 한국소음진동공학회:학술대회논문집
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    • 한국소음진동공학회 2002년도 춘계학술대회논문집
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    • pp.1132-1137
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    • 2002
  • 최근 국내에서는 바닥충격음에 대한 측정방법이 개정(2001년 6월 19일자 기술표준원 고시 제2001-334호)되어 KS F 2810-1(바닥충격음 차단성능 현장 측정방법 1부- 표준중량충격원에 의한 방법)과 KS F 2810-2(바닥충격음 차단성능 현장 측정방법 2부- 표준중량충격원에 의한 방법)의 체계가 구축되었다. 이는 현장 측정방법으로서 완성된 건축물에 대한 공간성능을 측정하는 의미를 가지고 있다.(중략)

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소음이 외국어 학습에 미치는 영향 (Noise Effects on Foreign Language Learning)

  • 임은수;김현기;김병삼;김종교
    • 음성과학
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    • 제6권
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    • pp.197-217
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    • 1999
  • In a noisy class, the acoustic-phonetic features of the teacher and the perceptual features of learners are changed comparison with a quiet environment. Acoustical analyses were carried out on a set of French monosyllables consisting of 17 consonants and three vowel /a, e, i/, produced by 1 male speaker talking in quiet and in 50, 60 and 70 dB SPL of masking noise on headphone. The results of the acoustic analyses showed consistent differences in energy and formant center frequency amplitude of consonants and vowels, $F_1$ frequency of vowel and duration of voiceless stops suggesting the increase of vocal effort. The perceptual experiments in which 18 undergraduate female students learning French served as the subjects, were conducted in quiet and in 50, 60 dB of masking noise. The identification scores on consonants were higher in Lombard speech than in normal speech, suggesting that the speaker's vocal effort is useful to overcome the masking effect of noise. And, with increased noise level, the perceptual response to the French consonants given had a tendency to be complex and the subjective reaction score on the noise using the vocabulary representative of 'unpleasant' sensation to be higher. And, in the point of view on the L2(second language) acquisition, the influence of L1 (first language) on L2 examined in the perceptual result supports the interference theory.

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A poisson equation associated with an integral kernel operator

  • Kang, Soon-Ja
    • 대한수학회논문집
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    • 제11권2호
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    • pp.367-375
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    • 1996
  • Suppose the kernel function $\kappa$ belongs to $S(R^2)$ and is symmetric such that $ < \otimes x, \kappa >\geq 0$ for all $x \in S'(R)$. Let A be the class of functions f such that the function f is measurable on $S'(R)$ with $\int_{S'(R)}$\mid$f((I + tK)^{\frac{1}{2}}x$\mid$^2d\mu(x) < M$ for some $M > 0$ and for all t > 0, where K is the integral operator with kernel function $\kappa$. We show that the \lambda$-potential $G_Kf$ of f is a weak solution of $(\lambda I - \frac{1}{2} \tilde{\Xi}_{0,2}(\kappa))_u = f$.

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PD-SOI기판에 제작된 SiGe p-MOSFET의 신뢰성 분석 (Reliability Analysis of SiGe pMOSFETs Formed on PD-SOI)

  • 최상식;최아람;김재연;양전욱;한태현;조덕호;황용우;심규환
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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    • pp.533-533
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    • 2007
  • The stress effect of SiGe p-type metal oxide semiconductors field effect transistors(MOSFETs) has been investigated to compare device properties using Si bulk and partially depleted silicon on insulator(PD SOI). The electrical properties in SiGe PD SOI presented enhancements in subthreshold slope and drain induced barrier lowering in comparison to SiGe bulk. The reliability of gate oxides on bulk Si and PD SOI has been evaluated using constant voltage stressing to investigate their breakdown (~ 8.5 V) characteristics. Gate leakage was monitored as a function of voltage stressing time to understand the breakdown phenomena for both structures. Stress induced leakage currents are obtained from I-V measurements at specified stress intervals. The 1/f noise was observed to follow the typical $1/f^{\gamma}$ (${\gamma}\;=\;1$) in SiGe bulk devices, but the abnormal behavior ${\gamma}\;=\;2$ in SiGe PD SOI. The difference of noise frequency exponent is mainly attributed to traps at silicon oxide interfaces. We will discuss stress induced instability in conjunction with the 1/f noise characteristics in detail.

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갑상선 수술범위에 따른 음성의 음향적 분석 (Acoustic Analysis of Voice Change According to Extent of Thyroidectomy)

  • 강영애;구본석
    • 말소리와 음성과학
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    • 제7권4호
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    • pp.77-83
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    • 2015
  • Voice complication without the laryngeal nerve injury can occur after thyroidectomy. The purpose of this study is to investigate voice changes according to extent of thyroidectomy with acoustic analysis. Thirty-five female patients with papillary thyroid carcinoma took voice evaluation at before and 1 month, and 3 months after thyroidectomy. Acoustic analysis parameters were speaking fundamental frequency(SFF), min $F_0$, max $F_0$, dynamic range $F_0$, jitter, shimmer, noise-to-harmonic ratio(NHR), and Cepstral prominence peak(CPP). Repeated-measured analysis of variance was applied. Time-related voice changes showed significant differences in all parameters except NHR. At 1 month after surgery, voice quality was worse and pitch was decreasing, but voice quality and pitch were improving at 3-month follow-up. Voice changes according to the extent of surgery were in SFF, max $F_0$, and dynamic range $F_0$. Time by surgery-related voice change existed only in min $F_0$. The result showed that the severity of voice complication depended on the extend of thyroidectomy which had a negative impact on $F_0$-related parameters. The deterioration of voice quality at 1 month after thyroidectomy may be affected by the loss of thyroid hormone in the blood. The descent of $F_0$-related parameters may be impacted by laryngeal fixation of surgical site adhesion.

E, F, G 밴드 디지털 주파수 측정기에 대한 연구 (A Study on Digital Frequency Discriminator (DFD) Operating in E, F, and G Band)

  • 유윤섭;김은실;이찬호;안현관;양홍선;임중수
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2006년도 하계종합학술대회
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    • pp.149-150
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    • 2006
  • In this paper, design, simulation, fabrication method, and measured results of a digital frequency discriminator(DFD) operating in E, F, and G band are introduced. We describe the direct conversion scheme(DCS) with microwave integrated-circuit(MIC) developed for the small-area and high-speed system. When the input signal is the pulse with a pulse width of 100 ns, accuracy of frequencies measured by the DFD has 1.335 MHz RMS at no noise and 2.64 MHz RMS at signal-to-noise(S/N) ratio within 3 dB in E, F, and G band, which nearly satisfy the specification of 2.5 MHz RMS.

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Nano-CMOSFET를 위한 플라즈마-질화막의 초기 산화막 성장방법에 따른 소자 특성과 저주파 잡음 특성 분석 (Dependence of Low-frequency Noise and Device Characteristics on Initial Oxidation Method of Plasma-nitride Oxide for Nano-scale CMOSFET)

  • 주한수;한인식;구태규;유옥상;최원호;최명규;이가원;이희덕
    • 한국전기전자재료학회논문지
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    • 제20권1호
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    • pp.1-7
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    • 2007
  • In this paper, two kinds of initial oxidation methods i.e., SLTO(Slow Low Temperature Oxidation: $700^{\circ}C$) and RTO(Rapid Thermal Oxidation: $850^{\circ}C$) are applied prior to the plasma nitridation for ultra thin oxide of RPNO (Remote Plasma Nitrided Oxide). It is observed that SLTO has superior characteristics to RTO such as lower SS(Sub-threshold Slope) and improved Ion-Ioff characteristics. Low frequency noise characteristics of SLTO also showed better than RTO both in linear and saturation regime. It is shown that flicker noise is dominated by carrier number fluctuation in the channel region. Therefore, SLTO is promising for nano-scale CMOS technology with ultra thin gate oxide.

신호 대 잡음비가 향상된 센서 신호 측정용 저 전력 SAR형 A/D 변환기 (A Low Power SAR ADC with Enhanced SNDR for Sensor Application)

  • 정찬경;임신일
    • 센서학회지
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    • 제27권1호
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    • pp.31-35
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    • 2018
  • This paper describes a low-power, SNDR (signal-to-noise and distortion ration) enhanced SAR (successive approximation register) type 12b ADC (analog-to-digital converter) with noise shaping technique. For low power consumption and small chip size of the DAC (digital-to-analog converter), the top plate sampling technique and the dummy capacitor switching technique are used to implement 12b operation with a 10b capacitor array in DAC. Noise shaping technique is applied to improve the SNDR by reducing the errors from the mismatching of DAC capacitor arrays, the errors caused by attenuation capacitor and the errors from the comparator noise. The proposed SAR ADC is designed with a $0.18{\mu}m$ CMOS process. The simulation results show that the SNDR of the SAR ADC without the noise shaping technique is 71 dB and that of the SAR ADC with the noise shaping technique is 84 dB. We can achieve the 13 dB improvement in SNDR with this noise shaping technique. The power consumption is $73.8{\mu}W$ and the FoM (figure-of-merit) is 5.2fJ/conversion-step.

SRM의 직류여자 전류방식에 의한 진동, 소음의 저감 대책에 관한 연구 (Study on the Reduction of Vibration, Acoustic Noise of SRM by DC Excitation Commutation Method)

  • 황영문;정태욱;오성규;추영배
    • 대한전기학회논문지:전기기기및에너지변환시스템부문B
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    • 제49권1호
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    • pp.1-8
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    • 2000
  • Switched reluctance motor(SRM) has simple magnetic structure, and requires simple power electronic driving circuit. It is very useful for wide range adjustable speed drive system. But, SRM drive generates large vibration and acoustic noise because it is commutated individually by step pulse m.m.f of each phase pole. In the vibration and acoustic noise characteristics. The considerable vibration and noise is induced by radial deforming of stator, so the frequency of dominant vibration and noise is coincident with the frequency of natural mode frequency of mechanical structure. This radial vibration force is generated in the phase commutation region. This paper suggests the new electromagnetic structure of SRM with auxiliary commutation winding which is excited by direct current. This phase and commutation winding are coupled magnetically between one phase winding and the other. Therefore, the switch-off phase current is absorbed by the another phase winding. By this interaction of phase and commutation winding in commutation mechanism, vibration and noise is reduced. And this reduction effect is examined by the test of prototype machine. As a result, SRM with DC exciting commutation winding is very useful to reduce vibration and acoustic noise.

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WLAN을 위한 고속 링 발진기를 이용한 5.8 GHz PLL (5.8 GHz PLL using High-Speed Ring Oscillator for WLAN)

  • 김경모;최재형;김삼동;황인석
    • 전자공학회논문지SC
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    • 제45권2호
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    • pp.37-44
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    • 2008
  • 본 논문에서는 고속 링 발진기를 이용한 WLAN용 5.8 GHz PLL을 제안하였다. 제안한 PLL에 사용된 링 발진기는 부 스큐 지연방식을 이용하여 차동 구조로 설계되었다. 따라서 Power-Supply-Injected Noise에 둔감하며, 1/f Noise를 감소시키기 위하여 Tail Current Source를 사용하지 않았다. 제안한 링 발진기는 $0{\sim}1.8V$의 컨트롤 전압에 걸쳐 $5.13{\sim}7.04GHz$의 발진주파수를 보였다. 본 논문에서 제안한 PLL 회로는 0.18 um 1.8 V TSMC CMOS 라이브러리를 기본으로 하여 설계하였고 시뮬레이션을 통하여 성능을 검증하였다. 동작 주파수는 5.8 GHz이며, Locking Time은 2.5 us, 5.8 GHz에서의 소비 전력은 59.9mW로 측정되었다.