• Proceedings of the KIEE Conference
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• 2008.10b
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• pp.495-496
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• 2008

본 논문에서는 UHF 대역 RFID 의 국제표준인 ISO/IEC 18000-6C 표준을 만족하는 태그 칩을 위한 저전력 고성능 아날로그 회로를 설계하였다. 설계된 아날로그 회로는 성능 테스트를 위해 메모리 블록을 포함하고 있으며, 태그의 인식률과 경제성을 위해 저 전력 및 칩 면적의 최소화에 중점을 두고 설계하였다. 설계된 UHF 대역 RFID 태그용 아날로그 회로는 0.24Vpeak의 RF 입력으로 동작이 가능하며, 칩 면적은 $552.5{\mu}m{\times}338.8{\mu}m$, UHF 대역 RFID 태그 칩에 적합한 작은 면적을 갖는다.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.19 no.9
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• pp.1045-1050
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• 2008

In this paper presents a CMOS RF receiver for IR-UWB wireless communications is presented. The impulse radio based UWB receiver adopts the non-coherent demodulation that simplifies the receiver architecture and reduces power consumption. The IR-UWB receiver consists of LNA, envelop detector, VGA, and comparator and the receiver including envelope detector, VGA, and comparator is fabricated on a single chip using $0.18{\mu}m$ CMOS technology. The measured sensitivity of IR-UWB receiver is down to -70 dBm and the BER $10^{-3}$, respectively at data rate 1 Mbps. The current consumption of IR-UWB receiver except external LNA is 5 mA at 1.8 V.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.9 no.5
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• pp.1172-1177
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• 2008

To compensate voltage error of the channel selecting filter, a current comparison type voltage tuning circuit is designed. Because the proposed current comparison type voltage tuning circuit is not need to attach another subcircuit, the chip size can be reduced, therefore the proposed circuit is very useful in the low voltage and low power channel filter. We used three channels including bluetooth communication system as application circuits of the proposed tuning circuit. As the results of HSPICE simulation using $0.18{\mu}m$ CMOS technology verify that the proposed tuning circuit respectively can be operated in $12{\mu}s$, $13{\mu}s$ and $15{\mu}s$ in three channel.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.44 no.7 s.361
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• pp.41-46
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• 2007

A novel post-linearization technique is proposed for CMOS cascode low noise amplifier (LNA). The technique uses dual common gate FETs one of which delivers the linear currents to a load and the other one sinks the $3^{rd}$ order intermodulation currents of output currents from the common source FET. Selective current branching can be implemented in $0.18{\mu}m$ CMOS process by using a thick oxide FET as an IM3 sinker with a normal FET as a linear current buffer. A differential LNA adopting this technique is designed at 2.14GHz. The measurement results show 11dBm IIP3, 15.5dB power gain and 2.85dB noise figure consuming 12.4mA from 1.8V power supply. Compared with the LNA with turning off the IM3 sinker, the proposed technique improves the IIP3 by 7.5 dB.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2013.10a
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• pp.365-367
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• 2013

본 논문에서는 $0.18{\mu}m$ CMOS 공정 기술을 이용하여 12-bit 1MSps 연속 근사화 아날로그-디지털 변환기(Analog to Digital Converter : ADC)를 설계하였다. 설계된 아날로그-디지털 변환기는 Cadence Tool을 이용하여 시뮬레이션 및 레이아웃을 진행하였다. 시뮬레이션 결과 1.8V의 공급전압에서 전력 소모는 5.5mW였고, 입력 신호의 주파수가 100kHz일 때, SNDR은 70.03dB, 유효 비트수는 11.34bit의 결과를 보였다. 설계된 변환기는 $0.8mm{\times}0.7mm$ 크기로 레이아웃 되었다.

• The KIPS Transactions:PartA
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• v.15A no.3
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• pp.135-140
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• 2008

This paper describes a high-speed CMOS demultiplexer using redundant multi-valued logic (RMVL). The proposed circuit receives serial binary data and is converted to parallel redundant multi-valued data using RMVL. The converted data are reconverted to parallel binary data. By the redundant multi-valued data conversion, the RMVL makes it possible to achieve higher operating speeds than that of a conventional binary logic. The implemented demultiplexer consists of eight integrators. Each integrator is composed of an accumulator, a window comparator, a decoder and a D flip flop. The demultiplexer is designed with TSMC $0.18{\mu}m$ standard CMOS process. The validity and effectiveness are verified through the HSPICE simulation. The demultiplexer is achieved the maximum data rate of 20 Gb/s and the average power consumption of 95.85 mW.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.21 no.2
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• pp.129-135
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• 2010

In this paper, we propose and demonstrate a new four-port BPSK direct conversion receiver based on $0.18\;{\mu}m$ CMOS technology for K-band applications. The proposed direct conversion receiver is composed of two active combiners, an lumped LC balun, two power detectors and an analog decode. The designed direct conversion receiver is successfully demodulated BPSK signal with 40 Mbps in the K-band.

• JSTS:Journal of Semiconductor Technology and Science
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• v.9 no.1
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• pp.14-21
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• 2009

A digital differential transmitter based on CMOS inverter worked up to 2.8 Gbps at the supply voltage of 1 V with a $0.18{\mu}m$ CMOS process. By calibrating the output impedance of the transmitter, the impedance matching between the transmitter output and the transmission line is achieved. The PVT variations of pre-driver are compensated by the calibration of the rising-edge delay and falling-edge delay of the pre-driver outputs. The chip fabricated with a $0.18{\mu}m$ CMOS process, which uses the standard supply voltage of 1.8 V, gives the highest data rate of 4Gbps at the supply voltage of 1.2 V. The proposed calibration schemes improve the eye opening with the voltage margin by 200% and the timing margin by 30%, at 2.8 Gbps and 1 V.

• 제어로봇시스템학회:학술대회논문집
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• 2005.06a
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• pp.206-211
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• 2005

The hearing aids specific operational amplifier described in this paper is a single-supply, low voltage CMOS amplifier. It works on 1.3V single-supply and gets a gain of 82dB. The 0.18${\mu}m$ CMOS process was chosen to reduce the driven voltage as well as the power dissipation.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.1
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• pp.56-63
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• 2008

This paper describes a 12 bit 1GS/s current mode segmented DAC for WCDMA communication. The proposed circuit in this paper employes segmented structure which consists of 4bit binary weighted structure in the LSB and 4bit thermometer decoder structure in the mSB and MSB. The proposed DAC uses delay time compensation circuits in order to suppress performance decline by delay time in segmented structure. The delay time compensation circuit comprises of phase frequency detector, charge pump, and control circuits, so that suppress delay time by binary weighted structure and thermometer decoder structure. The proposed DAC uses CMOS $0.18{\mu}m$ 1-poly 6-metal n-well process, and measured INL/DNL are below ${\pm}0.93LSB/{\pm}0.62LSB$. SFDR is approximately 60dB and SNDR is 51dB at 1MHz input frequency. Single DAC's power consumption is 46.2mW.