• 제목/요약/키워드: .RuO$_2$ electrode

검색결과 131건 처리시간 0.026초

$RuO_2$/n-GaN 구조의 Schottky Diode 특성 (Characteristics of $RuO_2$/n-GaN Schottky Diode)

  • 김동식
    • 전자공학회논문지 IE
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    • 제46권3호
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    • pp.1-5
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    • 2009
  • 고전력, 고온에서 사용되는 소자에서 RuO2는 다른 전극 물질에 비해 많은 장점을 가지고 있으며, 특히 GaN를 이용하는 소자의 전극물질로서 매우 우수한 특성을 갖음을 확인할 수 있었다. RuO2을 이용한 GaN 소자의 제작은 새로운 전기화학 금속증착법을 통하여 금속배선을 형성하였으며, 과염소산(HClO4)용액을 수용액 사용하였다. RuO2의 두께는 인가전압과 시간에 의존하며, 두께를 조절함으로서 정류성 및 비정류성 소자의 전극으로의 사용 가능성을 확인할 수 있었다.

Hot-wall MOCVD에 의한 $RuO_2$ 박막의 특성 (Characterization of $RuO_2$ Thin Films by Hot-wall Metal Organic Chemical Vapor Deposition)

  • 신웅철;윤순길
    • 한국세라믹학회지
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    • 제33권9호
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    • pp.969-976
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    • 1996
  • RuO2 thin films were deposited on SiO2(1000 $\AA$)/Si by hot-wall Metal Organic Chemical Vapor Depositon. The crystallinity of RuO2 thin films increased with increasing deposition temperature and the preferred orienta-tion of RuO2 films converted (200) plane to (101) plane with increasing film thicknesses. Such a change in preferred orientation was influenced on the crystallographic structure and the residual stress of RuO2 thin films. The resistivity of the 2700$\AA$-thick RuO2 thin films deposted at 30$0^{\circ}C$ was 52.7$\mu$$\Omega$-cm and they could be applicable to bottom electrodes of high dielectric materials. However the resistivity of RuO2 thin films increased with decreasing film thicknesses. The grain size and the resistivity of RuO2 thin films were densified with increasing the annealing temperature and showed the decrease of resistivity.

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탄소나노섬유 및 RuO2가 폴리아닐린의 초고용량 캐폐시턴스 특성에 미치는 효과 (Electrochemical Properties of Polyaniline with Carbon Nanotube and RuO2 as Supercapacitor Electrodes)

  • 윤여일;고장면
    • Korean Chemical Engineering Research
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    • 제46권5호
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    • pp.898-902
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    • 2008
  • Polyaniline(PAN), multi-walled carbon nanotube(CNT)/PAN, $CNT/PAN/RuO_2$로 구성된 초고용량캐폐시터 전극을 제조하여 cyclic voltammetry(CV)를 이용하여 1 M $H_2SO_4$ 수용액에서 캐패시턴스 특성을 조사하였다. PAN, CNT/PAN 그리고 $CNT/PAN/RuO_2$ 복합전극은 높은 주사속도인 1,000 mV/s에서 199, 304, 392 F/g의 비용량을 각각 나타내었다. 수명시험 결과, $CNT/PAN/RuO_2$, CNT/PAN, PAN 전극은 10,000 번의 싸이클에서 각각 61, 66 그리고 51%의 초기용량을 유지하였다. PAN 전극은 CNT와 복합화하여 축전용량 및 수명특성을 향상시킬 수 있으며, $RuO_2$ 도입은 축전용량 향상에는 기여하나 수명 증가 효과는 미미하였다.

유기전해액에서 루테늄산화물 전극의 전기화학적 특성 (Electrochemical Characteristics of Ruthenium Oxide Electrode-Organic Electrolyte System)

  • 도칠훈;최상진;문성인;윤문수;육경창;김상길
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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    • pp.1125-1128
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    • 2002
  • Electrochemical capacitor made with metal oxide electrode uses rapid and reversible protonation/deprotonation of metal oxide material under the aqueous acidic solution, generally. Electrochemical stability window of aqueous electrolyte-type capacitor is narrow compared to that of organic electrolyte-type capacitor. Electrochemical characteristics of electrochemical capacitor made with metal oxide electrode and lithium cation based organic electrolyte were evaluated. Electrochemical capacitor based on $RuO_2$ electrode material and 1M $LiPF_6$ in mixed solvents of EC, DEC, and EMC has anodic and cathodic specific capacitance of 145 and 142 F/g-$RuO_2{\cdot}nH_2O$, respectively, by using cyclic voltammetry with scan rate of 2 mV/sec g-$RuO_2$ in potential range of 2.0~4.2V(Li|$Li^+$).

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알칼리 수전해에서 전극재질에 따른 수소생산 특성 (The Characteristics of Hydrogen Production According to Electrode Materials in Alkaline Water Electrolysis)

  • 문광석;박대원
    • 에너지공학
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    • 제24권2호
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    • pp.34-39
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    • 2015
  • 본 연구에서는 중온에서 수소생산이 가능한 무격막형 알칼리수전해 장치를 제작하여 전극재질에 따른 수소생산 특성을 확인하였다. 전극재질($IrO_2/Ti$, $RuO_2/Ti$, Ti)별 전기화학적 특성을 확인한 결과 $RuO_2/Ti$에서 가장 높은 효율을 나타내었고, 전해질 농도별 수소생산량 실험 결과, 전해질 농도와 수소생산량은 비례하는 경향을 보였으며 30% KOH 조건에서 $118.9m^3/m^3/day$로 가장 높은 수소생산량을 확인할 수 있었다. 전극재질별 수소생산량을 확인한 실험에서는 anode($IrO_2/Ti$)와 cathode($RuO_2/Ti$)로 조합 시 $157.55m^3/m^3/day$$IrO_2/Ti$를 cathode로 조합한 결과에 비해 약 6.97% 높은 수소생산량을 보였다. 이는 DSA전극의 전기화학적 활성도 향상에 의한 수소생산량 증대와 기존 전극에 비해 내구성이 향상되어 안정적인 알칼리 수전해가 가능한 것으로 사료된다.

산화제 생성율이 높은 촉매성 산화물 전극(DSA)의 개발에 관한 연구(I) (A Study on the Preparation of the Dimensionally Stable Anode(DSA) with High Generation Rate of Oxidants(I))

  • 김동석;박영식
    • 한국환경과학회지
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    • 제18권1호
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    • pp.49-60
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    • 2009
  • Fabrication and oxidants formation of 1 and 2 component metal oxide electrode, which is known to be so effective to destruct non-biodegradable organics in wastewater, were studied. Five electrode materials (Ru, Pt, Sn, Sb and Gd) were used for the 1 and 2 component electrode. The metal oxide electrode was prepared by coating the electrode material on the surface of the titanium mesh and then thermal oxidation at $500^{\circ}C$ for 1 h. The removed RhB per 2 min and unit W for one component electrode decreased in the following sequences: Ru/Ti>Sb/Ti>Pt/Ti>Gd/Ti>Sn/Ti. The concentration of oxidants generated in 1 and 2 component electrodes was in the order of: $ClO_2$> free Cl>$H_2O_2>O_3$. OH radical was not generated from in entire one and two component electrodes. RhB degradation rate and generated oxidants of the Ru-Sn=9:1 electrode was higher than that of the two component electrode. The exact relationship between the removal of RhB and the generated oxidants concentration was not obvious. However, it was assumed that electrode with high RhB decolorization had high oxidant concentration.

$RuO_2$전극 위에 증착된 ALD-$Al_2O_3$ MIM 커패시터 특성 (Characteristics of ALD-$Al_2O_3$ MIM Capacitor on $RuO_2$ Metal Electrode)

  • 도승우;문경호;장철영;정영철;이재성;이용현
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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    • pp.143-144
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    • 2005
  • Recently, MIM(metal-insulator-metal) capacitor is one of the essential device for DRAM device. In this thesis, $Al_2O_3$ thin film which has a relatively high dielectric constant was deposited by ALD(atomic layer deposition) using MPTMA and $H_2O$ source. Deposition temperature of $Al_2O_3$ thin film was $200^{\circ}C$ and its thickness was 300 ${\AA}$. $RuO_2$ bottom electrode was deposited by RF-magnetron sputtering using $RuO_2$ target. The physical characteristics of $Al_2O_3$ films were investigated by AES, TEM and Ellipsometry. Electrical characteristics were analyzed by C-V and I-V measurement.

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하부전극 변화에 따른 PZT 박막 특성에 관한 연구 (The effects of PZT thin film capacitor with various bottom electrode)

  • 박영;정규원;임승혁;송준태
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1999년도 하계학술대회 논문집 D
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    • pp.1986-1988
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    • 1999
  • Ferroelectric lead zirconate titanate(PZT) thin films were prepared on various bottom electrodes by rf magnetron sputtering methode. The structural phase and surface morphology of the PZT thin films were largely affected by the bottom electrodes. P-E curves of PZT thin films deposited on Pt. $RuO_2$ and Ru/$RuO_2$ bottom electrode showed typical P-E hysteresis loop. The measure values of $P_r,\;E_c$ of the Ru/PZT/Ru/$RuO_2$ capacitor were $16.9{\mu}C/Cm^2$, 140kV/ cm, respectively. The Ru/PZT/Ru/$RuO_2$ capacitors were fatigue free uP to nearly $10^9$ switching cycle but Pt/PZT/Pt capacitor showed 34% degradation uP to $10^9$ switching cycle.

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Electrochemical Oxidation of Ethanol at $RuO_2-Modified$ Nickel Electrode in Alkaline Media Studied by Electrochemical Impedance Spectroscopy

  • Kim Jae-Woo;Park Su-Moon
    • 전기화학회지
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    • 제3권2호
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    • pp.76-80
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    • 2000
  • Electrochemical oxidation of ethanol has been studied at nickel and $RuO_2-modified$ nickel electrodes in 1 M KOH using electrochemical impedance spectroscopy. Equivalent circuits have been worked out from simulation of impedance data to model oxidation of ethanol as well as the passivation of the electrode. The charge-transfer resistances for oxidation of these electrodes became smaller in the presence of ethanol than in its absence. The nickel substrate facilitated ethanol oxidation at $RuO_2-modified$ nickel electrodes. We also describe the Performance of nanosized electrocatalysts of the same composition in comparison to those of the bulk electrodes. The nanosized electrodes were obtained by electrode-positing the alloy from complexed form of these metal ions with fourth and fifth generation polyamidoamine dendrimers.

Ruthenium Thin Films Grown by Atomic Layer Deposition

  • Shin, Woong-Chul;Choi, Kyu-Jeong;Jung, Hyun-June;Yoon, Soon-Gil;Kim, Soo-Hyun
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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    • pp.12-12
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    • 2008
  • Ruthenium is one of the noble metals having good thermal and chemical stability, low resistivity, and relatively high work function(4.71eV). Because of these good physical, chemical, and electrical properties, Ru thin films have been extensively studied for various applications in semiconductor devices such as gate electrode for FET, capacitor electrodes for dynamic random access memories(DRAMs) with high-k dielectrics such as $Ta_2O_5$ and (Ba,Sr)$TiO_3$, and capacitor electrode for ferroelectric random access memories(FRAMs) with Pb(Zr,Ti)$O_3$. Additionally, Ru thin films have been studied for copper(Cu) seed layers for Cu electrochemical plating(ECP) in metallization process because of its good adhesion to and immiscibility with Cu. We investigated Ru thin films by thermal ALD with various deposition parameters such as deposition temperature, oxygen flow rate, and source pulse time. Ru thin films were grown by ALD(Lucida D100, NCD Co.) using RuDi as precursor and $O_2$ gas as a reactant at 200~$350^{\circ}C$.

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