• The Transactions of the Korean Institute of Electrical Engineers C
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• v.53 no.1
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• pp.47-52
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• 2004

3D microstructures with different side-wall angles and different scales are fabricated by both methods of inclined exposure and rear-side exposure at each of selected areas on a same substrate. Conventional methods of inclined exposure are used to make side-walls with a same inclined angle on one substrate and to get a scale error due to front-side exposure through thick photoresist layer, But, by using the proposed method, we are able to fabricate 3D microstructures on a same substrate with various side-wall angles and accurate dimensions as the original design. In the rear-side exposure, UV exposure light reflects from the chromium mask pattern after passing through the thick photoresist layer, resulting in fabrication of well-defined, inclined 3D structures inside the thick photoresist layer.

• Korean Journal of Optics and Photonics
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• v.18 no.1
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• pp.74-78
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• 2007

We report theoretical and experimental results for application of transmittance-controlled photomask technology to ArF lithography. The transmittance-controlled photomask technology is thought to be a promising technique fo critical dimension (CD) uniformity correction on a wafer by use of phase patterns on the backside of a photomask. We could theoretically reproduce experimental results for illumination intensity drop with respect to the variation of backside phase patterns by considering light propagation from the backside to the front side of a photomask at the ArF lithography wavelength. We applied the transmittance-controlled photomask technology to ArF lithography for a critical layer of DRAM (Dynamic Random Access Memory) having a 110-nm design rule and found that the in-field CD uniformity value was improved from 13.8 nm to 9.7 nm in $3{\sigma}$.

• Journal of the Microelectronics and Packaging Society
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• v.11 no.2 s.31
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• pp.59-66
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• 2004

This paper presents a novel fabrication process for a tapered hollow metallic microneedle array using backside exposure of SU-8, and analytic solutions of critical buckling of a tapered hollow microneedle. An SU-8 meta was formed on a Pyrex glass substrate and another SU-8 layer, which was spun on top of the SU-8 mesa, was exposed through the backside of the glass substrate. An array of SU-8 tapered pillar structures. with angles in the range of $3.1^{\circ}{\sim}5^{\circ}$ was formed on top of the SU-8 mesa. Conformal electrodeposition of metal was carried out followed by a mechanical polishing using a pianarizing polymeric layer. All organic layers were then removed to create a metallic hollow microneedle array with a fluidic reservoir on the backside. Both $200{\mu}m\;and\;400{\mu}m$ tall, 10 by 10 arrays of metallic microneedles with inner diameters of the tip in the range of $33.6{\sim}101\;{\mu}m$ and wall thickness of $10{\mu}m\;-\;20{\mu}m$ were fabricated. Analytic solutions of the critical buckling of arbitrary-angled truncated cone-shaped columns are also presented. It was found that a single $400{\mu}m$ tall hollow cylindrical microneedle made of electroplated nickel with a wall thickness of $20{\mu}m$, a tapered angle of $3.08^{\circ}$ and a tip inner diameter of $33.6{\mu}m$ has a critical buckling force of 1.8 N. This analytic solution can be used for square or rectangular cross-sectioned column structures with proper modifications.

• Korean Journal of Optics and Photonics
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• v.15 no.1
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• pp.79-85
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• 2004

We report on a transmittance controlled photomask with phase patterns on the back quartz surface. Theoretical analysis for changes in illumination pupil shape with respect to the variation of size and density of backside phase patterns and experimental results for improvement of critical dimension uniformity on a wafer by using the transmittance controlled photomask are presented. As phase patterns for controlling transmittance of the photomask we used etched contact-hole type patterns with 180" rotative phase with respect to the unetched region. It is shown that pattern size on the backside of the photomask must be made as small as possible in order to keep the illumination pupil shape as close as possible to the original pupil shape and to achieve as large an illumination intensity drop as possible at a same pattern density. The distribution of illumination intensity drop suitable for correcting critical dimension error was realized by controlling pattern density of the contact-hole type phase patterns. We applied this transmittance controlled photomask to a critical layer of DRAM (Dynamic Random Access Memory) having a 140nm design rule and could achieve improvement of the critical dimension uniformity value from 24.0 nm to 10.7 nm in 3$\sigma$.TEX>.

• Journal of the Korean Vacuum Society
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• v.18 no.2
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• pp.79-84
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• 2009

The electron emission source of triode type has been fabricated using CNT paste. The nano Ag particle and photosensitive polymers were added to the CNT paste. The surface roughness of the CNT emitter was uniform by the back exposure method. The added nano Ag particle improves the adhesion and the electric conductance with small variation in the CNTs and between electrode. After the aging with heat-exhausting, the reliability of the triode CNT electron source was secured in the high voltage and current operation for 12 hours. At this time, the gate leakage current was about 10 % less than.

• 전자공학회논문지 IE
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• v.44 no.2
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• pp.26-31
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• 2007

A surface treatment was performed after the screen printing of a carbon nanotube paste for obtaining the carbon nanotube field emission array(CNT FEA) on the soda-lime glass substrate. In this experiment, Ar ion bombardment was applied as an effective surface treatment method. After making a cathode electrode on the glass substrate, photo sensitive CNT paste was screen-printed, and then back-side was exposure by uv light. Then, the exposed CNT paste was selectively remained by development. After post-baking, the remained CNT paste was bombarded by accelerated Ar ions for removing some binders and exposing only CNTs. As results, the field emission characteristics were strongly depended on the accelerating energy. At 100 eV, the emission was highest and as the acceleration energy increases more then 100 eV, the emission decreased. This was due to the removal of CNT itself as well as binders.