• 대한기계학회:학술대회논문집
• /
• 대한기계학회 2003년도 추계학술대회
• /
• pp.922-927
• /
• 2003

In this paper, slurry fluid motion, abrasive particle motion, and roles of groove patterns on the pads are numerically investigated in the 2D and 3D geometries. The simulation results are analyzed in terms of experimental removal rate and WIWNU (within wafer non-uniformity) for ILD (inter level dielectric) CMP process. Numerical investigations reveal that the grooves in the pad behave as uniform distributor of abrasive particles and enhance the removal rate by increasing shear stress. Higher removal rate and desirable uniformity are numerically and experimentally observed at the pad with grooves. Numerical analysis is very well matched with experimental results and helpful for understanding polishing mechanism and local physics.

• 반도체디스플레이기술학회지
• /
• 제6권3호
• /
• pp.1-6
• /
• 2007

The integrated thermal-chemical-mechanical (TCM) material removal model presented in the companion paper is dynamically simulated in this work. The model is applied to a Cu CMP process for the simulation and the results of the three individual ingredients composing the model are presented separately first. These results are then incorporated to calculate the total material removal rate (MRR) of the Cu CMP. It is shown that the non-linear trend of MRR with respect to the applied mechanical power (i.e., non-Prestonian behavior), which is not well explained with the models established in principle on conventional contact mechanics, may be due to the chemical reaction(s) varying non-linearly with the temperature in the wafer.

• 반도체디스플레이기술학회지
• /
• 제6권2호
• /
• pp.35-40
• /
• 2007

An integrated material removal model considering thermal, chemical and contact mechanical effects in CMP process is proposed. These effects are highly coupled together in the current modeling effort. The contact mechanics is employed in the model incorporated with the heat transfer and chemical reaction mechanisms. The mechanical abrasion actions happening due to the mechanical contacts between the wafer and abrasive particles in the slurry and between the wafer and pad asperities cause friction and consequently generate heats, which mainly acts as the heat source accelerating chemical reaction(s) between the wafer and slurry chemical(s). The proposed model may be a help in understanding multi-physical interactions in CMP process occurring among the wafer, pad and various consumables such as slurry.

• 대한전기학회논문지:전기물성ㆍ응용부문C
• /
• 제50권9호
• /
• pp.466-470
• /
• 2001

We have developed a sub-micron gap fabrication technology using chemical-mechanical polishing (CMP) without /the sub-micron lithography equipments (0.18∼0.25 7m). And it has been applied to a lateral field emission device (FED), in which narrow gap distance is very important for reducing turn-on voltage. As a result, the turn-on voltage (at which the current level is 1 nA) of the fabricated device with the gap distance of 256 nm is as low as 4.0 V, which is the lowest turn-on voltage among lateral FEDs ever reported.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
• /
• pp.211-213
• /
• 1999

In this paper, we documented the controlling oxide removal amount on the pattern wafer using removal rate and removal thickness of blanket wafer. There was the strong correlation relationship for both(correlation factor:0.7109). So, we could confirm the repeatability as applying for STI CMP process from the obtained linear formular. As the result of repeatability test, the difference of calculated polishing time and actual polishing time was 3.48 seconds based on total 50 lots. If this time is converted into the thickness, it is from 104$\AA$ to 167$\AA$. It is possible to be ignored because it is under the process margin.

• 대한전기학회논문지:전기물성ㆍ응용부문C
• /
• 제55권12호
• /
• pp.549-554
• /
• 2006

In this paper we first applied the chemical mechanical polishing (CMP) process to the planarization of ferroelectric film in order to obtain a good planarity between electrode and ferroelectric film. $Pb_{1.1}(Zr_{0.52}Ti_{0.48})O_3$ (shortly PZT) ferroelectric film was fabricated by the sol-gel method. And then, we compared the structural characteristics before and after CMP process of PZT films. Removal rate, WIWNU% and surface roughness have been found to depend on slurry abrasive types and their hardness, especially, surface roughness and planarity were strongly depends on its pH value. A maximum in the removal rate is observed in the silica slurry, in contrast with the minimum removal rate occurs at ceria slurry. We found that the surface roughness of PZT films can be significantly reduced using the CMP technique.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
• /
• pp.113-114
• /
• 2005

Sufficient removal rate with adequate selectivity to realize the pattern mask of tetra-ethyl ortho-silicate (TEOS) film for the vertical sidewall angle were obtained by chemical mechanical polishing (CMP) with commercial silica slurry as a function of pH variation. The changes of X-ray diffraction pattern and dielectric constant by CMP process were negligible.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
• /
• pp.647-648
• /
• 2005

The development of CMP slurry chemistry for Ni that provides good CMP performance is the key for nickel based MEMS device fabrication. In this study, CMP of nickel was performed using different slurry versus oxidizer ratios arid different oxidizers also alumina particles as an abrasive.

• 대한기계학회논문집B
• /
• 제29권4호
• /
• pp.435-440
• /
• 2005

In this paper, slurry fluid motion, abrasive particle motion, and roles of groove patterns on the pads are numerically investigated in the 2D and 3D geometries. The simulation results are analyzed in terms of experimental removal rate and WIWNU (Within Wafer Non-Uniformity) for ILD (Inter Level Dielectric) CMP process. Numerical investigations reveal that the grooves in the pad behave as uniform distributor of abrasive particles and enhance the removal rate by increasing shear stress. Higher removal rate and desirable uniformity are numerically and experimentally observed at the pad with grooves. Numerical analysis is very well matched with experimental results and helpful fur understanding polishing mechanism and local physics.

• 한국결정성장학회지
• /
• 제28권1호
• /
• pp.51-56
• /
• 2018

PVT법으로 성장된 AlN 단결정의 표면 평탄화 최적화 하기 위하여 기계적 연마 후 $SiO_2$ slurry를 이용한 CMP 공정을 진행하였고 이에 따른 표면 형상, slurry 변화에 따른 가공 특성을 분석하였다. Slurry의 pH가 표면 연마 과정에 미치는 영향을 알아보기 위해 $SiO_2$ slurry의 pH를 조절하였으며, 제타전위측정기를 통해 각각의 pH에 따른 zeta potential의 영향과 MRR(material removal rate) 결과를 비교하였으며, 최종적으로 원자간력 현미경(atomic force microscope)을 이용한 표면 거칠기 RMS(0.2 nm)를 얻을 수 있었다.