• Transactions of the Korean Society of Automotive Engineers
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• v.6 no.2
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• pp.21-31
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• 1998

In this paper, a thermo-mechanical model for viscous coupling(VC) was suggested and torque equation in viscous mode was derived considering the effects of geometry of the plates, thermo-mechanical dynamics, silicon oil characteristics and dissolved air characteristics in the silicon oil. Theoretical results were in good accordance with experimental results demonstrating that VC thermo-mechanical model and the theoretical equations, response of the torque transmitted, pressure, temperature and time to the hump were investigated. Simulation results showed that filling rate of the silicon oil plays an integral role not only in the steady state torque characteristics but also in determining the time to hump.

• Proceedings of the Korea Information Processing Society Conference
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• 2002.04a
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• pp.631-634
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• 2002

In this paper we improved that hump occurrence by increased oxidation thickness, and control field oxide recess$(\leq20nm)$, wet oxidation etch time(19HF, 30sec), STI nitride wet cleaning time(99 HF, 60sec + P 90min) and gate pre-oxidation cleaning time(U10min+19HF, 60sec) to prevent hump occurring at STI channel edge.

• Journal of the Korea Society for Simulation
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• v.11 no.1
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• pp.23-30
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• 2002

An STI(Shallow Trench Isolation) by using a CMP(Chemical Mechanical Polishing) process has been one of the key issues in the device isolation[1] In this paper we fabricated N, P-MOSFEET tall analyse hump characteristics in various rounding oxdation thickness(ex : Skip, 500, 800, 1000$\AA$). As a result we found that hump occurred at STI channel edge region by field oxide recess. and boron segregation(early turn on due to boron segregatiorn at channel edge). Therefore we improved that hump occurrence by increased oxidation thickness, and control field oxide recess( 20nm), wet oxidation etch time(19HF,30sec), STI nitride wet cleaning time(99HF, 60sec+P 90min) and fate pre-oxidation cleaning time (U10min+19HF, 60sec) to prevent hump occurring at STI channel edge.

• Proceeding of Spring/Autumn Annual Conference of KHA
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• 2009.04a
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• pp.175-180
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• 2009

According to an increasing demand of political support and development on renewable energy as a solution for the energy problem in Korea, the government has established a goal to raise renewable energy supply from 2.27% to 5% until 2011. Especially in the case of public building in which energy use is in great demand, it would bring a great advantage to develop and utilize the Photovoltaic System as an electric energy and Geothermal Heat Pump System as a thermal energy. On the occasion of Photovoltaic System, Photovoltaic module can be used as an architectural material so that it can reduce construction cost and when we use solar energy, it is possible to make building's own power supply. As for Geothermal Heat Pump System, It can be used infinitely as long as the solar energy exist and operation cost is cheap and yearly efficiency is stable. However, we need to make a plan to reduce early investment expanses for these two renewable energy systems and to expand a diffusion rate as we develop a competitive domestic technology level. So in this study, we are going to perform evaluation of economical efficiency according to the introduction of Photovoltaic System and Geothermal Heat Pump System in public buildings which will be built up inside of Daegu Sin-seo innovation city. As a first step, we will investigate present installation condition of these two renewable energy systems and based upon that, will seek efficient introduction program of renewal energy systems that can be applied in public buildings.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2017.05a
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• pp.527-528
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• 2017

Current-voltage characteristics of source-overlapped gate tunnel field-effect transistor (SOG-TFET) with different channel doping concentration are proposed. Due to the gaussian doping in which the channel region near the source is highly doped and that far from the source is lightly doped, the ambipolar current was reduced, compared with the uniformly-doped SOG-TFET. On-current is almost similar in P-P-N and P-I-N structure but subthreshold swing (SS) of P-P-N TFET enhanced 5 times higher than those of P-I-N TFET. off-current and ambiploar current of the proposed SOG-TFET decrease 10 times and 100 times than those of the uniformly-doped SOG-TFET.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.21 no.5
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• pp.869-875
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• 2017

Using TCAD simulation, performances of tunnel field-effect transistors (TFETs) was investigated. Drain current-gate voltage types of TFET structure such as single-gate TFET (SG-TFET), double-gate TFET (DG-TFET), L-shaped TFET (L-TFET), and Pocket-TFET (P-TFET) are simulated, and then as dielectric constant of gate oxide and channel length are varied their subthreshold swing (SS) and on-current ($I_{on}$) are compared. On-currents and subthreshold swings of the L-TFET and P-TFET structures with high electric constant and line tunneling were 10 times and 20 mV/dec more than those of the SG-TFET and DG-TFET using point tunneling, respectively. Especially, it is shown that hump effect which dominant current element changes from point tunneling to line tunneling, is disappeared in P-TFET with high-k gate oxide such as $HfO_2$. The analysis of 4 types of TFET structure provides guidelines for the design of new types of TFET structure which concentrate on line tunneling by minimizing point tunneling.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.21 no.5
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• pp.876-884
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• 2017

The current-voltage characteristics of Silicon(Si), Germanum(Ge), and hetero tunnel field-effect transistors(TFETs) with source-overlapped gate structure was investigated using TCAD simulations in terms of tunneling. A Si-TFET with gate oxide material $SiO_2$ showed the hump effects in which line and point tunneling appear simultaneously, but one with gate oxide material $HfO_2$ showed only the line tunneling due to decreasing threshold voltage and it shows better performance than one with gate oxide material $SiO_2$. Tunneling mechanism of Ge and hetero-TFETs with gate oxide material of both $SiO_2$ and $HfO_2$ are dominated by point tunneling, and showed higher leakage currents, and Si-TFET shows better performance than Ge and hetero-TFETs in terms of SS. These simulation results of Si, Ge, and hetero-TFETs with source-overlapped gate structure can give the guideline for optimal TFET structures with non-silicon channel materials.

• Journal of the Society of Disaster Information
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• v.11 no.4
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• pp.570-580
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• 2015

In the study, planning indicator that should be considered in applying traffic calming technique was derived, and it was intended to analyze the importance of indicator that should most considered in planning traffic calming technique through AHP analysis on the basis of it. The result of planning indicator may be summarized by dividing into road section and crossing section. In road section, hump (0.35) for equipment stimulating reduction of speed, hump image/fort (0.31) for visual control equipment, and slalom type road (0.52) for chicane, and bollard (0.47) for blocking passing route are shown to be the most important and come before anything. In crossing section, signal indicator (0.33) for visual control equipment, rumble strip (0.44) for equipment stimulating reduction of speed, zigzag type road (0.65) for chicane, and blocking going straight at crossing (0.45) for blocking passing route are shown to be the most important and come before anything. The result of the study is judged to be used for basic material in applying traffic calming technique and establishing policy hereafter.