• Title/Summary/Keyword: 함수발생기

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A Sliding Mode Control Scheme for Inverted Pendulum System (슬라이딩 모드 제어기법을 이용한 도립진자 시스템 제어)

  • Han, Sang-Wan;Park, Minho
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.15 no.2
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    • pp.1020-1026
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    • 2014
  • A problem of sliding mode control is chattering because of controle input signal included unknown disturbance and nonlinear input parameters. This paper presents a sliding mode controller design to inverted pendulum system. In this paper, a sliding mode control algorithm to reduce a chattering is proposed. The reduction of chattering is accomplished by smoothing function for nonlinear control input. In this method, the dynamic equations of the inverted pendulum is decoupled by considering nonlinear parameters and external disturbances. Therefore, this study is applied to obtain switching control inputs for sliding mode controller. The proposed technique is tested to the control of inverted pendulum through computer simulations. The result shown reduced chattering in control input.

Low-cost Impedance Technique for Structural Health Monitoring (임피던스 기반 저비용 구조물 건전성 모니터링 기법)

  • Lee, Jong-Won
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.19 no.12
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    • pp.265-271
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    • 2018
  • This paper presents a method for detecting damage to a structure at low cost using its impedance. The impedance technique is a typical method to detect local damage for structural health monitoring. This is a common technique for estimating damage by monitoring the electro-mechanical admittance signal of the structure. To apply this technique, an expensive impedance analyzer is generally used. On the other hand, it is necessary to develop a low-cost variant to effectively disseminate the technique. In this study, a method based on the transfer impedance using a function generator and digital multimeter, which are generally used in the laboratory instead of an impedance analyzer, was developed. That is, this technique estimates the damage by comparing the damage index using the amplitude ratio of the output voltage measured in the healthy and damaged state. A transfer impedance test was carried out on a steel specimen. By comparing the damage index, the presence of damage could be assessed reasonably. This study is a basic investigation of an impedance-based low-cost damage detection method that can be used effectively for structural health monitoring if supplemented with future research to estimate the damage location and severity.

Active Noise Control in Ductilike System using Adaptive Filtering (적응필터링에 의한 덕트계의 능동소음제어)

  • 이태연;김상명;송원식;오재응
    • Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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    • 1991.04a
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    • pp.17-22
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    • 1991
  • 최근 기계장치로부터 발생하는 소음을 감소시키는 새로운 방법으로서, 능동 적으로 소음을 제어하는 방법에 대한 연구가 활발히 진행되고 있다. 이것은 원하지 않는 소음을 그 신호의 역위상을 갖는 부가음을 이용하여 능동적으 로 감쇠시키는 방법으로서, 저주파수 대역에서 비효율적인 수동적인 방법인 소음기둥에 대한 대안으로 많은 학자들의 관심의 대상이 되어 왔다. 초기에 는 소음을 줄이기 위해 요구되는 여러가지 음향요소의 전달함수를 제어하는 데 대한 불가능성으로 인해 능동 소음제어에 대한 실질적인 발전이 지연되 어 왔으나 최근 마이크로 컴퓨터를 비롯한 전자공학의 발전으로 인해 적응 신호처리 분야가 등장하게 되었으며, 음향계의 소음을 원하는 수준까지 제어 하는 능동 소음제어의 실시간 구현이 가능하게 되었다. 그 중에서도 음이 1 차원적으로 전파한다고 볼 수 있는 길이가 긴 덕트구조물에서의 능동 소음 제어는 가장 기본적이며 현실적으로 자동차 배기계나 냉동.공조설비에 있어 서 실용적으로 적용할 수 있는 문제임 만큼 많은 연구가 이루어지고 있다. 이러한 능동 소음제어 방법을 음향계에 적용하였을 때, 부가적인 음을 발생 하는 제어용 스피커로 인해 입력마이크로폰으로의 음향궤환이 존재하고 이 에 따라 제어계가 불안정해질 수 있으며, 또한 변환기의 사용으로 인한 부가 적인 전달함수가 존재하므로 이에 대한 중요한 의미를 갖고 고려하여야 한 다. 본 연구에서는 적응 필터링 이론에 의한 소음원의 입력신호에 대한 최적 한 예측으로써 부가음을 발생시키고, 입력신호 및 제어된 출력신호간의 차인 오차를 최소화 시키도록 하는 오차적응제어법을 이용한 능동소음 제어 방법 을 제시하였다. 이와 아울러 제어계의 환경변화에 따른 파라메타의 변화에 적응적으로 응답이 가능해야 하는 적응 소음제어 시스템에서, 음향궤환과 함 께 필히 고려해야 하는 부가적인 전달함수의 영향을 고려한 능동 소음제어 에 대해 연구하였다. 경량화 추세에 따라 지반이나 케이싱이 경량이거나 유연하여 회전축과 동적으로 연성된 경우 회전축-베어링-지반으로 이루어진 2중구조의 회전축 계 동특성을 해석할 수 있는 프로그램을 개발하므로서 회전 기계류의 진동 전반에 걸친 문제점에 대한 그 원인과 현상을 명확히 분석하여 국내의 전기 계류의 보다 신뢰성있는 설계 및 제작자료를 확보하는데 기여할 수 있게 하 였다.존의 small molecular Gd-chelate에 비해 매우 큼을 알 수 있었다. MnPC는 간세포에 흡수된 후 담도계로 배출되는 간특이성 조영제임을 확인하였다. 장비 내에서 반복 시행한 평균값의 차이는 대체적으로 유의한 차이가 없었으나, 다른 장비에서 반복 시행한 장비간의 사이에는 유의한 차이가 있는 경우가 더 많았다. 따라서 , MRS 검사를 소뇌나 뇌교의 어떤 절환에 적용하기 전에 각 장비 마다 정상 기준치를 반드시 얻은 후에 이상여부를 판 정하는 것이 필수적이라고 생각된다.EX> 이상이 적절한 진단기준으로 생각되었다. $0.4{\;}\textrm{cm}^3$ 이상의 좌우 부피차를 보이는 모든 증례에서 육안적으로도 해마위축이 뚜렷이 나타났다. 결론 : MR영상을 이용한 해마의 부피측정은 해마경화증 환자의 진단에 있어 육안적인 MR 진단이 어려운 제한된 경우에만 실제적 도움을 줄 수 있는 보조적인 방법으로 생각된다.ofile whereas relaxivity at high field is not affected by τS. On the other hand, the change in τV does not affect low field profile but strongly in fluences on both inflection fie이 and the maximum relaxivity value. The results shows a fluences on both inflection field

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Speed Control of Marine Gas Turbine Engine using Nonlinear PID Controller (비선형 PID 제어기를 이용한 선박용 가스터빈 엔진의 속도 제어)

  • Lee, Yun-Hyung;So, Myung-Ok
    • Journal of Navigation and Port Research
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    • v.39 no.6
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    • pp.457-463
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    • 2015
  • A gas turbine engine plays an important role as a prime mover that is used in the marine transportation field as well as the space/aviation and power plant fields. However, it has a complicated structure and there is a time delay element in the combustion process. Therefore, an elaborate mathematical model needs to be developed to control a gas turbine engine. In this study, a modeling technique for a gas generator, a PLA actuator, and a metering valve, which are major components of a gas turbine engine, is explained. In addition, sub-models are obtained at several operating points in a steady state based on the trial running data of a gas turbine engine, and a method for controlling the engine speed is proposed by designing an NPID controller for each sub-model. The proposed NPID controller uses three kinds of gains that are implemented with a nonlinear function. The parameters of the NPID controller are tuned using real-coded genetic algorithms in terms of minimizing the objective function. The validity of the proposed method is examined by applying to a gas turbine engine and by conducting a simulation.

Analysis of Threshold Voltage Characteristics for Double Gate MOSFET Based on Scaling Theory (스켈링이론에 따른 DGMOSFET의 문턱전압 특성분석)

  • Jung, Hak-Kee;Han, Ji-Hyung;Jeong, Dong-Soo
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2012.05a
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    • pp.683-685
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    • 2012
  • This paper have presented the analysis of the change for threshold voltage and drain induced barrier lowering among short channel effects occurred in subthreshold region for double gate(DG) MOSFET with two gates to be next-generation devices, based on scaling theory. To obtain the analytical solution of Poisson's equation, Gaussian function been used as carrier distribution to analyze closely for experimental results, and the threshold characteristics have been analyzed for device parameters such as channel thickness and doping concentration and projected range and standard projected deviation of Gaussian function. Since this potential model has been verified in the previous papers, we have used this model to analyze the threshold chatacteristics. As a result to apply scaling theory, we know the threshold voltage and drain induced barrier lowering is changed, and the deviation rate is changed for device parameters for DGMOSFET.

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Analysis of Channel Doping Profile Dependent Threshold Voltage Characteristics for Double Gate MOSFET (이중게이트 MOSFET에서 채널도핑분포의 형태에 따른 문턱전압특성분석)

  • Jung, Hak-Kee;Han, Ji-Hyung;Lee, Jae-Hyung;Jeong, Dong-Soo;Lee, Jong-In;Kwon, Oh-Shin
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.15 no.6
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    • pp.1338-1342
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    • 2011
  • In this paper, threshold voltage characteristics have been analyzed as one of short channel effects occurred in double gate(DG)MOSFET to be next-generation devices. The Gaussian function to be nearly experimental distribution has been used as carrier distribution to solve Poisson's equation, and threshold voltage has been investigated according to projected range and standard projected deviation, variables of Gaussian function. The analytical potential distribution model has been derived from Poisson's equation, and threshold voltage has been obtained from this model. Since threshold voltage has been defined as gate voltage when surface potential is twice of Fermi potential, threshold voltage has been derived from analytical model of surface potential. Those results of this potential model are compared with those of numerical simulation to verify this model. As a result, since potential model presented in this paper is good agreement with numerical model, the threshold voltage characteristics have been considered according to the doping profile of DGMOSFET.

Analysis of Drain Induced Barrier Lowering for Double Gate MOSFET Using Gaussian Distribution (가우스분포를 이용한 이중게이트 MOSFET의 드레인유기장벽감소 분석)

  • Jung, Hak-Kee
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.16 no.2
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    • pp.325-330
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    • 2012
  • In this paper, drain induced barrier lowering(DIBL) has been analyzed as one of short channel effects occurred in double gate(DG) MOSFET to be next-generation devices. Since Gaussian function been used as carrier distribution for solving Poisson's equation to obtain analytical solution of potential distribution, we expect our results using this model agree with experimental results. DIBL has been investigated according to projected range and standard projected deviation as variables of Gaussian function, and channel structure and channel doping intensity as device parameter. Since the validity of this analytical potential distribution model derived from Poisson's equation has already been proved in previous papers, DIBL has been analyzed using this model. Resultly, DIBL has been greatly changed for channel structure and doping concentration.

A Study on the mathematical notation of expression in terms of skipping the parenthesis (괄호 생략 관점에서 식의 표기에 관한 고찰)

  • Kim, Chang Su;Kang, Jeong Gi
    • Journal of the Korean School Mathematics Society
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    • v.19 no.1
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    • pp.1-19
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    • 2016
  • This study investigated the mathematical notation used today in terms of skip ping the parenthesis. At first we have studied the elementary and secondary curriculum content related to omitted rules. As a result, it is difficult to find explicit evidence to answer that question 'What is the calculation of the $48{\div}2(9+3)$?'. In order to inquire the notation fundamentally, we checked the characteristics on prefix, infix and postfix, and looked into the advantages and disadvantages on infix. At the same time we illuminated the development of mathematical notation from the point of view of skipping the parenthesis. From this investigation, we could check that this interpretation was smooth in the point of view that skipping the parentheses are the image of the function. Through this we proposed some teaching methods including 'teaching mathematical notation based on historic genetic principle', 'reproduction of efforts to overcome the disadvantages of infix and understand the context to choose infix', 'finding the omitted parentheses to identify the fundamental formula' and 'specifying the viewpoint that skipping the multiplication notation can be considered as an image of the function'.

Analysis of Drain Induced Barrier Lowering for Double Gate MOSFET Using Gaussian Distribution (가우스분포를 이용한 이중게이트 MOSFET의 드레인유기장벽감소분석)

  • Jung, Hak-Kee;Han, Ji-Hyung;Jeong, Dong-Soo;Lee, Jong-In;Kwon, Oh-Shin
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2011.10a
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    • pp.878-881
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    • 2011
  • In this paper, drain induced barrier lowering(DIBL) has been analyzed as one of short channel effects occurred in double gate(DG) MOSFET to be next-generation devices. Since Gaussian function been used as carrier distribution for solving Poisson's equation to obtain analytical solution of potential distribution, we expect our results using this model agree with experimental results. DIBL has been investigated according to projected range and standard projected deviation as variables of Gaussian function, and channel thickness and channel doping intensity as device parameter. Since the validity of this analytical potential distribution model derived from Poisson's equation has already been proved in previous papers, DIBL has been analyzed using this model.

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Analysis of Threshold Voltage and DIBL Characteristics for Double Gate MOSFET Based on Scaling Theory (스켈링 이론에 따른 DGMOSFET의 문턱전압 및 DIBL 특성 분석)

  • Jung, Hakkee
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.17 no.1
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    • pp.145-150
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    • 2013
  • This paper has presented the analysis for threshold voltage and drain induced barrier lowering among short channel effects occurred in subthreshold region for double gate(DG) MOSFET as next-generation devices, based on scaling theory. To obtain the analytical solution of Poisson's equation, Gaussian function has been used as carrier distribution to analyze closely for experimental results, and the threshold characteristics have been analyzed for device parameters such as channel thickness and doping concentration and projected range and standard projected deviation of Gaussian function. Since this potential model has been verified in the previous papers, we have used this model to analyze the threshold characteristics. As a result to apply scaling theory, we know the threshold voltage and drain induced barrier lowering are changed, and the deviation rate is changed for device parameters for DGMOSFET.