• Title/Summary/Keyword: 핀 폭

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A study on the strength of mechanically fastened composite joint using the linear analysis (선형해석을 이용한 복합재료 기계적 체결부의 강도평가에 관한 연구)

  • Chun, Young-Jun;Choi, Jin-Ho;Kweon, Jin-Hwe;Lee, Sang-Chan
    • Journal of the Korean Society for Aeronautical & Space Sciences
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    • v.32 no.9
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    • pp.49-56
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    • 2004
  • With the wide application of fiber-reinforced composite material in aero-structures and mechanical parts, the design of composite joint have become a very important research area because they are often the weakest areas in composite structures. In this paper, the linear finite element analyses in which the pin of the composite joint was assumed to be the frictionless rigid body were performed and predict the strength of the mechanically fastened composite joint using the failure area index method. By the failure area index method, the strength of the mechanically fastened composite joint which has the specimen of different shape, hole size and stacking sequence could be predicted within 12.2%.

Design and Fabrication of A Doppler Radar for Motion Detector Using Frequency Tunable Hairpin Resonator (주파수 가변형 헤어핀공진기를 이용한 동작감지용 도플러 레이더센서의 제작 및 설계)

  • Kim, Eun-Su;Kim, Gue-Chol
    • The Journal of the Korea institute of electronic communication sciences
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    • v.13 no.5
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    • pp.931-936
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    • 2018
  • We designed an x-band radar for motion detector using a frequency tunable hairpin ring resonator. The proposed doppler radar sensor can vary the oscillation frequency by applying a hairpin resonator using a varactor diode to the oscillator, and this can also reduce the size by transmitting and receiving a signal from Tx/Rx dual antenna. The fabricated doppler radar sensor was fabricated in $30{\times}24mm$, and it was confirmed that the pulse width difference occurred according to the distance from the object. The measurement results showed oscillation at 10.525GHz. We confirmed that it is enough to use as radar for motion detection from the measured results.

Fabrication and Characterization of Transparent Conductive Film based on Bacterial Cellulose (Bacterial cellulose를 기반으로 하는 투명전도성막의 제조 및 특성평가)

  • Yim, Eun-Chae;Kim, Seong-Jun;Kee, Chang-Doo
    • Korean Chemical Engineering Research
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    • v.51 no.6
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    • pp.766-773
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    • 2013
  • A transparent film was fabricated based on bacterial cellulose (BC), BC has excellent physical strength and stability at high temperature and it is an environmental friendly flexible material. In order to improve the conductivity, silver nanowire (AgNW) and/or graphene were introduced to the BC membrane. The aspect ratio of the AgNW synthesized in this study was 214, with a length of $15{\mu}m$ and width of 70 nm. The higher aspect ratio improved the conductivity by reducing the contact resistance. The thermal and electrical properties of 7 types of films prepared were investigated. Each film was fabricated with rectangular shape ($2mm{\times}2mm{\times}50{\mu}m$). The films were scored with a net shape by a knife, and filled with AgNW and graphene to bestow conductivity. The film filled with AgNW showed favorable electrical characteristics with a thickness of $350{\mu}m$, electron concentration of $1.53{\times}10^{19}$, electron mobility of $6.63{\times}10^5$, and resistivity of 0.28. The film filled with graphene had a thickness of $360{\mu}m$, electron concentration of $7.74{\times}10^{17}$, electron mobility of 0.17, and resistivity of 4.78. The transmittances at 550 nm were 98.1% and 80.9%, respectively. All the films were able to light LEDs bulbs although their brightness differed. A thermal stability test of the BC and PET films at $150{\pm}5^{\circ}C$ showed that the BC film was more stable, whereas the PET film was quickly banded. From these results, it was confirmed that there it is possible to fabricate new transparent conductivity films based on BC.

X-Band 6-Way Waveguide Power Divider Using Inductive Post (유도성 포스트를 활용한 X-Band 6-Way 도파관 전력 분배기)

  • Kim, Dong-Hyun;Oh, Soon-Soo;Min, Kyeong-Sik;Kang, Suk-Youb
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.21 no.4
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    • pp.417-426
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    • 2010
  • This paper describes the 6-way power divider to be used as a feeding structure of the waveguide array antenna generating the plane wave at the near distance. The SMA connector has been connected at the center of the power divider in order to feed the radiating element. The six output ports made of waveguide are positioned on the peripheral of the divider. This paper proposes the method utilizing the inductive post in order to decrease the return loss. The height of the feeding pin, the diameter of the inductive post, and the distance between the feeding pin and inductive post have been investigated, and as a result, the power divider has been optimized. The simulated and measured results show the low return loss of about -40 dB. The calculated and measured transmission coefficients are -7.78 dB and -8.06 dB, respectively. The output power of the six waveguide port show equal-amplitude and equal-phase distribution. Since the power divider proposed in this paper can be expanded to the divider having several output ports, it could be easily applied to the various array antennas.

The impact of substrate bias on the Z-RAM characteristics in n-channel junctionless MuGFETs (기판 전압이 n-채널 무접합 MuGFET 의 Z-RAM 특성에 미치는 영향)

  • Lee, Seung-Min;Park, Jong-Tae
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.18 no.7
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    • pp.1657-1662
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    • 2014
  • In this paper, the impact of substrate bias($V_{BS}$) on the zero capacitor RAM(Z-RAM) in n-channel junctionless multiple gate MOSFET(MuGFET) has been analyzed experimentally. Junctionless transistors with fin width of 50nm and 1 fin exhibits a memory window of 0.34V and a sensing margin of $1.8{\times}10^4$ at $V_{DS}=3.5V$ and $V_{BS}=0V$. As the positive $V_{BS}$ is applied, the memory window and sensing margin were improved due to an increase of impact ionization. When $V_{BS}$ is increased from 0V to 10V, not only the memory window is increased from 0.34V to 0.96V but also sensing margin is increased slightly. The sensitivity of memory window with different $V_{BS}$ in junctionless transistor was larger than that of inversion-mode transistor. A retention time of junctionless transistor is better than that of inversion-mode transistor due to low Gate Induced Drain Leakage(GIDL) current. To evaluate the device reliability of Z-RAM, the shifts in the Set/Reset voltages and current were measured.

Isolation and purification of a cecropin-like antimicrobial peptide from the japanese oak silkworm, Antheraea yamamai (천잠 세크로핀 항균펩타이드 분리 및 정제)

  • Kim, Seong-Ryul;Goo, Tae-Won;Choi, Kwang-Ho;Park, Seung-Won;Kim, Sung-Wan;Hwang, Jae-Sam;Kang, Seok-Woo
    • Journal of Sericultural and Entomological Science
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    • v.50 no.2
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    • pp.145-149
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    • 2012
  • Cecropin is a well-studied antimicrobial peptide that play important role as key factor in insect humoral immunity. In this study, cecropin-like antimicrobial peptide was isolated and purified from the larval haemolymph of immune-challenged japanese oak silkworm, Antheraea yamamai. To isolate antimicrobial peptide, we separated and compared acidic extracted hemolymph protein bends between control and immune-challenged larvae using SDS-PAGE analysis. In the immune hemolymph extract, but not of non-immune hemolymph, we detected differential expressed peptide band with molecular mass 4,223.01 Da. To understand this peptide better, we successfully purified this peptide using cation exchange chromatography and gel permeation chromatography. Its N-terminal amino acid sequence obtained by Edman degradation evidenced a significant degree of identity with other lepidopteran cecropins. The purified A. yamamai cecropin-like peptide showed a broad spectrum of activity against fungi, Gram-negative and Gram-positive bacteria.

Long-term performance of drainage system for leakage treatment of tunnel operating in cold region (한랭지역에서 운영 중인 터널의 누수처리를 위한 유도배수시스템의 장기 성능 평가)

  • Kim, Dong-Gyou
    • Journal of Korean Tunnelling and Underground Space Association
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    • v.20 no.6
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    • pp.1177-1192
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    • 2018
  • The objective of this study is to develop the existing drainage system for catching the partial leakage of tunnel structures operating in cold region. The drainage system consists of drainage board, Hotty-gel as a waterproofing material, cover for preventing protrusion of Hotty-gel, air nailer, fixed nail, pipe for collecting ground leak, pipe for conveying ground leak, wire-mesh, and sprayed cement mortar. The drainage systems were installed in conventional concrete lining tunnels to evaluate the site applicability and constructability. The performances of waterproof and the drainage in the drainage system were evaluated by injecting 1,000 ml of red water in the back of the drainage system at 7 days, 14 days, 21 days, 28 days, 2 months, 3 months, 4 months, 5 months, 6 months, 7 months and 8 months. During 8 months of field test, the average daily temperature of the tunnel site was measured from $-16.0^{\circ}C$ to $25.6^{\circ}C$. The daily minimum temperature was $-21.3^{\circ}C$ and the daily maximum temperature was $30.8^{\circ}C$. There was no problem in waterproof and drainage performance of the drainage board in the drainage system. However, the pipe for conveying ground leak had the leakage problem from 14 days. It is considered that the leakage of the pipe for conveying ground leak was caused by the deformation of the pipe of the flexible plastic material having a thickness of 0.2 cm by using the high pressure air nailer and the fixing pin and the insufficient thickness and width of the hotty-gel for preventing the leakage.

Fabrication of MEMS Test Socket for BGA IC Packages (MEMS 공정을 이용한 BGA IC 패키지용 테스트 소켓의 제작)

  • Kim, Sang-Won;Cho, Chan-Seob;Nam, Jae-Woo;Kim, Bong-Hwan;Lee, Jong-Hyun
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.47 no.11
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    • pp.1-5
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    • 2010
  • We developed a novel micro-electro mechanical systems (MEMS) test socket using silicon on insulator (SOI) substrate with the cantilever array structure. We designed the round shaped cantilevers with the maximum length of $350{\mu}m$, the maximum width of $200{\mu}m$ and the thickness of $10{\mu}m$ for $650{\mu}m$ pitch for 8 mm x 8 mm area and 121 balls square ball grid array (BGA) packages. The MEMS test socket was fabricated by MEMS technology using metal lift off process and deep reactive ion etching (DRIE) silicon etcher and so on. The MEMS test socket has a simple structure, low production cost, fine pitch, high pin count and rapid prototyping. We verified the performances of the MEMS test sockets such as deflection as a function of the applied force, path resistance between the cantilever and the metal pad and the contact resistance. Fabricated cantilever has 1.3 gf (gram force) at $90{\mu}m$ deflection. Total path resistance was less than $17{\Omega}$. The contact resistance was approximately from 0.7 to $0.75{\Omega}$ for all cantilevers. Therefore the test socket is suitable for BGA integrated circuit (IC) packages tests.

Steep subthreshold slope at elevated temperature in junctionless and inversion-mode MuGFET (고온에서 무접합 및 반전모드 MuGFET의 문턱전압 이하에서 급격히 작은 기울기 특성)

  • Lee, Seung-Min;Park, Jong-Tae
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.17 no.9
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    • pp.2133-2138
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    • 2013
  • In this paper, the variation of a steep subthreshold slope at elevated temperature in nanowire n-channel junctionless and inversion mode MuGFETs has been compared. It has been observed that the subthreshold slopes are increased with the increase of the operation temperature in junctionless and inversio-mode transistors. The variation of a subthreshold slope with operation temperature is more significant in junctionless transistor than inversion-mode transistor. The temperature dependence on the variation of a subthreshold slope for different fin widths shows a similar behavior regardless of fin width. From the temperature dependence on the variation of a subthreshold slope for different substrate biases, it has been observed that the variation of a subthreshold slope is less significant when the substrate bias was applied. It is worth noting that one can achieve a subthreshold slope of below 41mV/dec at elevated temperature of 400K using the junctionless MuGFETs with a positive substrate bias.

Design and Fabrication of CMOS Micro Humidity Sensor System (CMOS 마이크로 습도센서 시스템의 설계 및 제작)

  • Lee, Ji-Gong;Lee, Sang-Hoon;Lee, Sung-Pil
    • Journal of the Institute of Convergence Signal Processing
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    • v.9 no.2
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    • pp.146-153
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    • 2008
  • Integrated humidity sensor system with two stages operational amplifier has been designed and fabricated by $0.8{\mu}m$ analog mixed CMOS technology. The system (28 pin and $2mm{\times}4mm$) consisted of Wheatstone-bridge type humidity sensor, resistive type humidity sensor, temperature sensors and operational amplifier for signal amplification and process in one chip. The poly-nitride etch stop process has been tried to form the sensing area as well as trench in a standard CMOS process. This modified technique did not affect the CMOS devices in their essential characteristics and gave an allowance to fabricate the system on same chip by standard process. The operational amplifier showed the stable operation so that unity gain bandwidth was more than 5.46 MHz and slew rate was more than 10 V/uS, respectively. The drain current of n-channel humidity sensitive field effect transistor (HUSFET) increased from 0.54 mA to 0.68 mA as the relative humidity increased from 10 to 70 %RH.

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