• Journal of the Microelectronics and Packaging Society
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• v.11 no.4 s.33
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• pp.43-48
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• 2004

Electromigration of Sn-3.5Ag-0.5Cu solder bumps was investigated with current densities of $3{\~}4{\times}10^4 A/cm^2$ at temperatures of $130{\~}160^{\circ}C$ using flip chip specimens which consisted of upper Si chip and lower Si substrate. Electromigration failure of the Sn-3.5Ag-0.5Cu solder bump occurred with complete consumption of Cu UBM and void formation at cathode side of the solder bump. The activation energies for electromigration of the Sn-3.5Ag-0.5Cu solder bump were measured as 0.61 eV at current density of $3{\times}10^4 A/cm^2$, 0.63 eV at $3.5{\times}10^4 A/cm^2$, and 0.77 eV at $4{\times}10^4 A/cm^2$, respectively.

• Journal of the Microelectronics and Packaging Society
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• v.21 no.1
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• pp.1-6
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• 2014

Flip chip bonded LED packages possess lower thermal resistance than wire bonded LED packages because of short thermal path. In this study, thermal and bonding properties of flip chip bonded high brightness LED were evaluated for Au-Sn thermo-compression bonded LEDs and Sn-Ag-Cu reflow bonded LEDs. For the Au-Sn thermo-compression bonding, bonding pressure and bonding temperature were 50 N and 300oC, respectively. For the SAC solder reflow bonding, peak temperature was $255^{\circ}C$ for 30 sec. The shear strength of the Au-Sn thermo-compression joint was $3508.5gf/mm^2$ and that of the SAC reflow joint was 5798.5 gf/mm. After the shear test, the fracture occurred at the isolation layer in the LED chip for both Au-Sn and SAC joints. Thermal resistance of Au-Sn sample was lower than that of SAC bonded sample due to the void formation in the SAC solder.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2006.10a
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• pp.645-646
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• 2006

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2009.06a
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• pp.1045-1046
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• 2009

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2008.06a
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• pp.925-926
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• 2008

• Journal of the Korean Society for Precision Engineering
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• v.27 no.7
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• pp.7-12
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• 2010

In this paper, chip-on-glass(COG) interconnection with anisotropic conductive film(ACF) using lateral thermosonic bonding technology is considered. In general, thermo-compression bonding which is used in practice for flip-chip bonding suffers from the low productivity due to the long bonding time. It will be shown that the bonding time can be improved by using lateral thermosonic bonding in which lateral ultrasonic vibration together with thermo-compression is utilized. By measuring the internal temperature of ACF, the fast curing of ACF thanks to lateral ultrasonic vibration will be verified. Moreover, to prove the reliability of the lateral thermosonic bonding, observation of pressured mark by conductive particles, shear test, and water absorption test will be conducted.

• Proceedings of the KWS Conference
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• 2010.05a
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• pp.78-78
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• 2010

모바일 정보통신기기를 중심으로 패키지의 초소형화, 고집적화를 위해 플립칩 공법의 적용이 증가되고 있고 있으며 접속피치의 미세화에 따라 솔더 및 언더필을 사용하는 C4 공법보다 ACA(Anisotropic Conductive Adhesive), NCA (Non-conductive Adhesive) 등의 접착제를 이용하는 칩본딩 공법에 대한 요구가 증가하고 있다. 특히, NCA 공법의 경우 산업 현장의 대량생산에 대응하기 위해서는 접착제의 속경화 특성이 요구되어 진다. 일반적으로 접착제의 경화거동은 DSC(Differential Scanning Calorimeter)를 사용해 확인하지만, 수초 이내에 경화되는 접착제의 경우는 적용되기 어렵다. 본 연구에서는 이러한 전자패키지용 접착제의 속경화 거동을 효과적으로 평가할 수 있는 방법을 조사 하였다. 실험에서 사용된 접착제는 에폭시계 레진 기반에 이미다졸계 경화제를 사용한 기본적인 포뮬레이션을 사용하였고, 경화시간은 160^{\circ}C에서 1분 이내에 경화되는 특성을 가지고 있다. 경화 거동을 확인하기 위해서 isothermal DSC와 DEA(Dielectric Analysis)의 두가지 방법을 사용해 비교하였다. 두 실험 방법 모두 $160^{\circ}C$를 유지하며 경화 거동을 확인하였고, DoC(Degree of Cure)의 측정오차를 비교 분석하였다. DEA는 이온 모빌리티 변화에 따른 유전손실율을 측정하는 방법으로 80~90% 이후의 경화도는 측정되지 않았지만, 수초 이내에 경화되는 속경화 특성을 평가하기에 적합한 것으로 확인되었다.

• Journal of Welding and Joining
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• v.25 no.2
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• pp.6-15
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• 2007

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2006.10a
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• pp.647-648
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• 2006

• Journal of the Microelectronics and Packaging Society
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• v.22 no.3
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• pp.39-44
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• 2015

We investigated the effect of CNT-Ag composite pad on the contact resistance of flip-chip joints, which were formed by flip-chip bonding of Cu/Au chip bumps to Cu substrate metallization using anisotropic conductive adhesive. Lower contact resistances were obtained for the flip-chip joints which contained the CNT-Ag composite pad than the joints without the CNT-Ag composite pad. While the flip-chip joints with the CNT-Ag composite pad exhibited average contact resistances of $164m{\Omega}$, $141m{\Omega}$, and $132m{\Omega}$ at bonding pressures of 25 MPa, 50 MPa, and 100 MPa, the flip-chip joints without the CNT-Ag composite pad had an average contact resistance of $200m{\Omega}$, $150m{\Omega}$, and $140m{\Omega}$ at each bonding pressure.