• Journal of Sensor Science and Technology
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• v.14 no.3
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• pp.160-168
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• 2005

ZnO epilayer were synthesized by the pulesd laser deposition(PLD) process on $Al_{2}O_{3}$ substrate after irradiating the surface of the ZnO sintered pellet by the ArF(193 nm) excimer laser. The epilayers of ZnO were achieved on sapphire ($Al_{2}O_{3}$) substrate at a temperature of $400^{\circ}C$. The crystalline structure of epilayer was investigated by the photoluminescence. The carrier density and mobility of ZnO epilayer measured with Hall effect by van der Pauw method are $8.27{\times}1016cm^{-3}$ and $299cm^{2}/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the ZnO obtained from the absorption spectra was well described by the Varshni's relation, $E_{g}(T)$=3.3973 eV-($2.69{\times}10^{-4}$ eV/K)$T^{2}$/(T+463K). The crystal field and the spin-orbit splitting energies for the valence band of the ZnO have been estimated to be 0.0041 eV and 0.0399 eV at 10 K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_{6}$ states of the valence band of the ZnO. The three photocurrent peaks observed at 10 K are ascribed to the $A_{1}-$, $B_{1}-$, and $C_{1}-$exciton peaks for n = 1.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.35 no.12B
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• pp.1236-1243
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• 2010

The perimeter defense system was created and its characteristics were evaluated. It was designed to utilize the fiber sensing device, namely OTDR(Optical Time Domain Reflectometer) which has been used for the maintenance of the optical communication network. An OTDR was constituted by a pulse laser with the nature of 1310nm, +15dBm for the observation of 400 meter optical fence. The high-speed 32-bit processor(S3C2440) has applied to MPU(Main Processor Unit) which helps to improve the performance of OTDR algorithms. Consequently, the maximum error was 0.84 meter on the performance test of the 10km monitoring and the pass criteria of ${\pm}1m$ satisfied in all the sections. The alarm delay time was under 3 sec after detecting the disorder. For the case of secondary trespassing after primary trespassing, the optical switch was installed in OTDR to monitor the secondary trespassing and to measure the multi-point detection. Therefore, this paper shows that the detections of secondary trespassing and multi-point is possible by means of optical switch.

• Proceedings of the KIEE Conference
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• 1999.07e
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• pp.2204-2206
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• 1999

Pulsed Nd:YAC laser is used widely for materials processing and instrumentation. It is very important to control the laser energy density in materials processing by a pulsed Nd:YAG laser. A pulse repetition rate and a pulse width are regarded as the most dominant factors to control the energy density of laser beam. In this study, the alternating charge-discharge system was designed to adjust a pulse repetition rate. This system is controlled by one chip microprocessor and allows to replace an expensive condenser for high frequency to a cheap condenser for low frequency. In addition. we have investigated the current pulse shape of flashlamp and the operating characteristics of a pulsed Nd:YAG laser. As a result, it is found that the laser output of the power supply using the alternating charge-discharge system is not less than that of typical power supply. As the pulse repetition rate rises from 30pps to 120pps by the step of 30pps at 1200V, it is found that the laser efficiency decreases but the laser output power increases about 6W at each step.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.10 no.6
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• pp.1186-1190
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• 2009

In this paper, we studied on a characteristic of movement of charged particle in equal electric field. In order to fabricate a panel, we used positive charged toner particles of black and negative one of yellow. Panel was biased rectangle pulse without any overshoot. Also, panel's optical characteristics with contrast ratio and viewing angle is measured with RT-200. Response time was measure by using incident laser and detective photodiode. The distribution of m/q of particles by driving in panel throughout the contrast ratio and response time. As a results, driving voltage, contrast ratio, and response time are decided by m/q of charged particles and when m/q of charged particles in panel have regular distribution, it is induce improvement driving characteristics.

• Korean Journal of Materials Research
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• v.23 no.1
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• pp.7-12
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• 2013

The $Cu_2ZnSnS_4$ (CZTS) thin film solar cell is a candidate next generation thin film solar cell. For the application of an absorption layer in solar cells, CZTS thin films were deposited by pulsed laser deposition (PLD) at substrate temperature of $300^{\circ}C$ without post annealing process. Deposition time was carefully adjusted as the main experimental variable. Regardless of deposition time, single phase CZTS thin films are obtained with no existence of secondary phases. Irregularly-shaped grains are densely formed on the surface of CZTS thin films. With increasing deposition time, the grain size increases and the thickness of the CZTS thin films increases from 0.16 to $1{\mu}m$. The variation of the surface morphology and thickness of the CZTS thin films depends on the deposition time. The stoichiometry of all CZTS thin films shows a Cu-rich and S-poor state. Sn content gradually increases as deposition time increases. Secondary ion mass spectrometry was carried out to evaluate the elemental depth distribution in CZTS thin films. The optimal deposition time to grow CZTS thin films is 150 min. In this study, we show the effect of deposition time on the structural properties of CZTS thin film deposited on soda lime glass (SLG) substrate using PLD. We present a comprehensive evaluation of CZTS thin films.

• Journal of the Korean Ceramic Society
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• v.50 no.6
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• pp.551-556
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• 2013

AlN films with c-axis orientation and thermal conductivity characteristics were deposited by using Pulsed Laser Deposition and the films were characterized by changing the deposition conditions. In particular, we investigated the optimal conditions for the application of a heat sinking plane AlN thin film. Epitaxial AlN films were deposited on sapphire ($c-Al_2O_3$) single crystals by pulsed laser deposition (PLD) with an AlN target. AlN films were deposited at a fixed pressure of $2{\times}10^{-5}$ Torr, while the substrate temperature was varied from 500 to $700^{\circ}C$. According to the experimental results of the growth temperature of the thin film, AlN thin films were confirmed with a highly c-axis orientation, maximum grain size, and high thermal conductivity at $650^{\circ}C$. The thermal conductivity of the AlN thin film was found to increase compared to bulk AlN near the band gap value of 6.2 eV.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.27-27
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• 2008

The different concentration Indium doped ZnO:Al films were grown on glass substrates (Corning 1737) at $200^{\circ}C$ by pulsed laser deposition. The indium doping in AZO films shows the critical effect on the crystallinity, resistivity, and optical properties of the films. The AZO films doped with 0.3 atom % indium content exhibit the highest crystallinity, the lowest resistivity of $4.5\times10^{-4}\Omega$-cm, and the maximum transmittance of 93%. The resistivity of the indium doped-AZO films is strongly related with the crystallinity of the films. The carrier concentration in the indium doped-AZO films linearly increases with increasing indium concentration. The mobility of the AZO films with increasing indium concentration was reduced with an increase in carrier concentration and the decrease in mobility was attributed to the ionized impurity scattering mechanism. In an optical transmittance, the shift of the optical absorption edge to shorter wavelength strongly depends on the electronic carrier concentration in the films.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.2098-2100
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• 2000

We propose pulsed $CO_2$ laser below 30W by the AC(60Hz) switching control of leakage transformer primary which has some advantage of cost and size compared to a typical pulsed power supply. Pulse repetition rate is adjusted from 5Hz to 60Hz to control laser output. In this laser, a low voltage open loop control for high voltage discharge circuit is employed to avoid the HV sampling or switching and high voltage leakage transformer is used to convert rectified low voltage pulse to high voltage one. A ZCS(Zero Cross Switch) circuit and a PIC one-chip microprocessor are used to control gate signal of SCR precisely. The pulse repetition rate is limited by 60Hz due to the frequency of AC line and a high leakage inductance. The maximum laser output was obtained about 23W at pulse repetition rate of 60Hz, total gas mixture of $CO_{2}/N_{2}$/He = 1/9/15, SCR gate trigger angle 90$^{\circ}$, and total pressure of 18Torr.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.2101-2103
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• 2000

In this paper, it is purpose to develop a pulsed $CO_2$ laser with stable output at pulse repetition rate range of 2 kHz. We used a IGBT as a switching device. The laser cavity was fabricated as an axial and water cooled type. It was used a ring blower to increase a cooling effect. The laser performance characteristics as parameters, such as pulse repetition rate, gas pressure have been investigated. The experiment was done under 3 electrode-type instead of 2 electrode-type. To achieve 3 electrode-type, we used two pulse-transformers which is operated parallel. As a result. the maximum output was about 28 W at the total pressure, of 20 Torr(the gas mixture $CO_2$:$N_2$:He=1:9:15 and the pulse repetition rate of 1300 Hz).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05a
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• pp.172-175
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• 2002

The technique of induced discharge by a pulsed CO2 laser is being applied to control electrical discharge path, material processing, triggered lightning for protecting the power equipments. In this paper, we have investigated about the characteristics of the induced discharge at atmospheric conditions by using a plasma channel, which is produced when a pulsed CO2 laser radiation is focused by a focusing mirror as a trigger source. A plasma channel produced by laser radiation has an effect on decreasing the threshold voltage and inducing the discharge in both needle electrodes. We have confirmed a delay time between a produced plasma channel and an electrical discharge after laser radiation. We provided the decreased voltage lower than the natural discharge voltage between electrode type of needles and was induced the discharge by forming a plasma channel between them. In this research we could understand the time delay of induced discharge by laser radiation, and the characteristics of the discharge cause by the decrease in the threshold voltage, and the polarity effect by changes of plasma channel positions between two electrodes.