• Title/Summary/Keyword: 투과광

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Fabrication of nano-structured PMMA substrates for the improvement of the optical transmittance (반구형 나노 패턴의 크기에 따른 PMMA기판의 광특성 평가)

  • Park, Y.M.;Shin, H.G.;Kim, B.H.;Seo, Y.H.
    • Proceedings of the Korean Society for Technology of Plasticity Conference
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    • 2009.10a
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    • pp.217-220
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    • 2009
  • This paper presents fabrication method of nano-structured PMMA substrates as well as evaluations of their optical transmittance. For anti-reflective surface, surface coating method had been conventionally used. However, it requires high cost, complicated process and post-processing times. In this study, we suggested the fabrication method of anti-reflective surface by the hot embossing process. Using the nano patterned master fabricated by anodic aluminum oxidation process. Anodic aluminum oxide(AAO) is widely used as templates or a molds for various applications such as carbon nano tube (CNT), nano rod and nano dots. Anodic aluminum oxidation process provides highly ordered regular nano-structures on the large area, while conventional pattering methods such as E-beam and FIB can fabricate arbitrary nano-structures on small area. We fabricated a porous alumina hole array with various inter-pore distance and pore diameter. In order to replicate nano-structures using alumina nano hole array patterns, we have carried out hot-embossing process with PMMA substrates. Finally the nano-structured PMMA substrates were fabricated and their optical transmittances were measured in order to evaluate the charateristivs of anti-reflection. Anti-reflective structure can be applied to various displays and automobile components.

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비정질 산화물 반도체 IGZO 박막의 특성 연구

  • Jang, Yajuin;Kim, Hong-Bae
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.08a
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    • pp.287-287
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    • 2012
  • 최근 투명 산화물 반도체(TOS: Transparent Oxide Semiconductor)중에 비정질 산화물 반도체(amorphous oxide semiconductor)를 이용한 트랜지스터 연구가 활발히 진행되고 있다. 비정질 산화물 반도체는 박막 트렌지스터 소자의 Active Layer으로 사용할 수 있다. 본 연구는 RF magnetron sputtering법으로 유리기판 위에 IGZO박막을 증착하였다. 박막 증착 조건은 초기 압력 $3.0{\times}10^{-6}$ Torr, 증착 압력 20 mTorr, 반응가스 Ar 50 sccm, RF power 30w, 증착 온도는 실온으로 고정하였으며, 공정변수로 증착 시간을 변화시키며 IGZO박막을 증착하였다. IGZO 타겟은 $In_2O_3$, $Ga_2O_3$, ZnO 분말을 각각 1:1:1 mol% 조성비로 혼합하여 소결한 타겟을 사용하였다. XRD 분석결과에 따라서 Bragg's 법칙을 만족하는 피크가 나타나지 않는 비정질 구조임을 확인할 수 있었다. 가시광 영역에서(450~700 nm) 모든 박막은 90% 이상 투과도를 나타내었다. 증착시간이 증가할수록 밴드갭이 감소하는 것을 확인하였다. 증착시간이 5분인 경우 캐리어 농도는 $2.2{\times}10^{19}$ $cm^{-3}$, 이동도는 7.5 $cm^2/V-s$, 비저항은 $3.8{\times}10^{-2}{\Omega}$-cm의 반도체 특성을 나타냈고, 박막 트렌지스터 소자의 Active Layer으로 사용할 수 있다.

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저온공정 InSnZnO 채널층을 이용한 산화막/산화막/산화막 비휘발성 메모리 소자의 전기적 특성 연구

  • Lee, So-Jin;Nguyen, Cam Phu Thi;Jang, Gyeong-Su;Kim, Tae-Yong;Lee, Yeong-Seok;Lee, Jun-Sin
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.317-317
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    • 2016
  • 이 연구에서는 산화막/산화막/산화막 적층구조의 블로킹산화막/전하저장층/터널링산화막과 InSnZnO를 채널층으로 이용한 비휘발성 메모리 (NVM) 소자의 메모리 특성을 확인하였다. NVM 소자의 기본 전기적 특성의 경우 $19.8cm2/V{\cdot}s$의 높은 전계효과 이동도, 0.09V의 낮은 문턱전압, 0.127 V/dec의 낮은 기울기 및 $1.47{\times}107$의 높은 전류점멸비를 나타내었다. 또한, InSnZnO의 경우 가시광영역에서 85% 이상의 투과도를 가짐을 확인하였다. NVM소자의 경우, +12V의 Programming과 1ms의 Programming duration time에서 104s 이후 86%이상의, 그리고 10년 후 67% 이상의 우수한 전하보유시간 특성을 나타내었다. 이를 통해 투명플렉서블 메모리 시스템에 산화막/산화막/산화막 적층구조의 InSnZnO NVM소자의 응용 가능성이 높다고 판단한다.

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Improvement of PDMS graphene transfer method through surface modification of target substrate (폴리디메틸실록산(PDMS)을 이용한 그래핀 전사법 개선을 위한 계면처리 연구)

  • Han, Jae-Hyung;Choi, Mu-Han
    • Journal of the Korean Applied Science and Technology
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    • v.32 no.2
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    • pp.232-239
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    • 2015
  • In this paper, we study the dry transfer technology utilizing PDMS (Polydimethylsiloxane) stamp of a large single-layer graphene grown on Cu-foil as catalytic metal by using Chemical Vapor Deposition (CVD). By changing the surface property of the target substrate through $UV/O_3$ treatment, we can transfer the graphene on the target substrate while minimizing mechanical damages of graphene layer. Multi-layer (1~4 layers) graphene was stacked on $SiO_2/Si$ wafer successfully by repeating thetransfer method/process and then optical transmittance and sheet resistance of graphene layers have been measured as a quality assessment.

RF magnetron sputtering법으로 제작된 IGZO 박막의 Annealing 변화에 따른 특성 연구

  • Jin, Chang-Hyeon;Kim, Hong-Bae
    • Proceedings of the Korean Vacuum Society Conference
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    • 2015.08a
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    • pp.184.1-184.1
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    • 2015
  • RF magnetron sputtering법을 이용하여 IGZO박막을 RF power 100W로 일정하게 유지시켜, 열처리 변화에 따른 구조적, 전기적, 광학적 특성 분석을 연구하였다. IGZO 타겟은 $In_2$ $O_3$, $Ga_2$ $O_3$, ZnO 분말을 각각 1:1:2 mol% 조성비로 혼합하여 소결한 타겟을 사용하였고, $20mm{\times}20mm$ XG glass 기판위에 IGZO박막을 증착하였다. sputtering의 조건은 base pressure $2.0{\times}$10^-6Torr, working pressure $2.0{\times}$10^-2Torr, RF power 100 W, 증착온도는 실온으로 고정, 증착된 박막은 Annealing장비로 $500^{\circ}C$, $700^{\circ}C$, $800^{\circ}C$로 열처리를 하였다. XRD 분석 결과 열처리 $700^{\circ}C$부터 2theta=31.4도에서 peak intensity가 증가하며 결정화가 진행되는 것을 확인하였다. AFM분석 결과 열처리 $700^{\circ}C$에서 최소 0.31 Roughness를 갖는 것을 확인하였고, Hall 측정 결과 열처리 $700^{\circ}C$에서 carrier concentration $4.91{\times}$10^19cm^-3, Mobility 14.4cm^2/V-s, Resistivity $8.7{\times}$10^-5${\Omega}-cm$로 확인하였으며, UV-Visible-NIR을 이용하여 열처리 한 모든 IGZO박막은 가시광선 영역에서 평균 85%이상의 광 투과성을 확인하였다.

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Electrical and Optical Properties of InSe Single Crystals (InSe 단결정의 전기적 광학적 특성에 관한 연구)

  • Kim, Chang-Dae;Lee, Cheol-Gi;Jo, Dong-San
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.19 no.5
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    • pp.1-4
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    • 1982
  • Single crystals of InSe were obtained by the Bridgman method. The crystal structure was hombohedral(R3m) with lattice paramete. a=4.02A, c=24.96A. At 300$^{\circ}$K the electrical conductivity was about ~10-2($\Omega$.cm)-1, reslpectively. The electrical conductivity type was n- type. The donor level located at 0.072eV below the conduction band. The Photosensitivity was observed in range from 840nm to 1120nm. The energy gap of InSe single crystal measured from the photoconductivity and the optical transmittance spectrum was 1.20eV, 1.21eV, respectively.

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Detection of gamma irradiated South Sea cultured pearls II (감마선 조사된 남양진주의 검지 II)

  • Choi, Hyun-Min;Lee, Bo-Hyun;Kim, Young-Chool
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.22 no.4
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    • pp.165-169
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    • 2012
  • It is very difficult to detect irradiated South Sea cultured pearls (SSCPs) at a low dose by gemological methods (e.g. optical transmission method, microscopic examination, UV fluorescence reaction, and so on). In this study, however, it was possible to distinguish between irradiated SSCPs from un-irradiated SSCPs by ESR analysis. We have analyzed the pearl nacre and nucleus by separating them for the purposed of providing information about the change of $CO^-_2$ radical as growing absorbed doses. And it was found out that the signal of $CO^-_2$ radical of the nacre is more distinct than the nucleus.

Computer Simulation of Lower Farmland by the Composition of an Agrophotovoltaic System (영농형 태양광 발전 시스템 구성에 따른 하부 농지 일사량의 전산모사 연구)

  • Kim, DeokSung;Kim, ChangHeon;Park, JongSung;Kim, ChangHan;Nam, JaeWoo;Cho, JaiYoung;Lim, CheolHyun
    • New & Renewable Energy
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    • v.16 no.1
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    • pp.41-46
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    • 2020
  • The share of agrophotovoltaics in the "renewable energy 3020", which is the Korean government policy for revitalizing new and renewable energy, is increasing gradually. In this study, the distribution of solar radiation received by crops growing on virtual farmland under a range of conditions, such as module height, module angle, shading ratio, and module type, was quantified and analyzed using an Ecotect program, which allows insolation analysis during the period from spring to fall. As the module angle increases, transmissive modules increase the amount of solar radiation delivered to the lower farmland. In addition, the difference between 3x12 Cell Type and 4x9 Cells Type, which are types of photovoltaic modules used in practice, was found to be small. The analysis results can be used as a design standard for the future establishment of agrophotovoltaic systems.

A study on the transmittance due to thickness of zirconium core (지르코니아 코어의 두께에 따른 분광광도계 투과율에 관한 연구)

  • Jung, In-Ho;Park, Myung-Ja;Kim, Joo-Won
    • Journal of Technologic Dentistry
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    • v.33 no.2
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    • pp.129-136
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    • 2011
  • Purpose: The purpose of this study was to investigate the transmittance differences of zirconium core due to thickness within the visible light spectrum. Methods: 36 specimens were divided into 3 groups (0.6mm, 0.8mm, 1.0mm) which have each 12 specimens. The size of specimens was 10mm high and 10mm wide. The transmittance of specimens are measured by spectrophotometer Model Cary 500 that can measure infrared-ray, visible wave and ultraviolet-ray. Results: The results shows that there was no significant difference between specimen's thickness and transmittance. Conclusion: The individual's color perception is personal and there are numerous factors that influence on it. In general, human eye can perceive the color of thing only within visible light spectrum but in this experiment through spectrophotometer there was no big difference between specimen's thickness and transmittance. To sum up, The most important factors were a layed porcelain structure and its thickness rather than core thickness in the porcelain crown.

Analysis of Electrical Characteristics of Silicon Solar cell according to the ARC thickness using Medici Program (메디치 프로그램을 이용한 실리콘 솔라셀의 ARC 두께에 따른 전기적 특성 해석)

  • Kim, Jae-Gyu;Kim, Ji-Man;Song, Han-Jung
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.11 no.10
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    • pp.3853-3858
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    • 2010
  • This paper shows electrical analysis of the silicon solar cell according to the various ARC thickness using Medici program. we built a mesh structure of the solar cell that use ARC consisting of ITO(Indium-Tin-Oxide) transparent electrode, for the Medici modeling. About various oxide layer thickness of the ARC for 30 nm, 60 nm, 90 nm, changes of the I-V curve, Isc, Voc, transmittance and external collection efficiency performed according to wavelength of Incident ray. Simulation results show maximum power 22 mW/$cm^2$, fill factor 0.83 in condition of 60 nm ITO thickness.