• The Journal of the Korea Contents Association
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• v.8 no.6
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• pp.8-15
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• 2008

In this paper, in order to analyze property of frequency response in optical microphone, system was implemented. The capacitance microphone and fiber-optic transmission path type fiber-optic microphone (FOM) have weaknesses in directivity, size, weight, and price. However suggested optical microphone can be constituted by cheap devices, so it has many benefits like small size, light weight, high directivity, etc. Head part of optical microphone which is suggested in this paper is movable back and forth by sound pressure with the attached reflection plate. Operating point is determined by measuring the respond characteristics and choosing the point on which has maximum linearity and sensitivity while changing the distance between optical head and vibrating plate. We measured the output of the O/E transformed signal of the optical microphone while frequency of sound signal is changed using sound measurement/analysis program, Smaart Live and USBPre, which are based on PC, and compared the result from an existing capacitance microphone. The measured Optical microphone showed almost similar output characteristics as those of the compared condenser microphone, and its bandwidth performance was about 300[Hz]-3[kHz] at up to 3 [dB].

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.11
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• pp.45-55
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• 1999

The small signal analyzer for the stationary drift-diffusion equation is developed. The slotboom variables of the potential, electron and hole concentrations for the response of applied small signal are defined and the stationary drift-diffusion equation is linearlized on DC operation point by $S^3A$ method. Frontal solver, which is used to solve the global matrix, progresses the accuracy of the solution in high frequency and minimizes the requirement of the memory. The simulations are executed on the structure of 3 dimensional N'P junction diode and 2 dimensional n-MOSFET to verify the proposed algorithm. The average relative errors of the conductance and the capacitance compared with MEDICI are about 26% and 0.67 for N'P junction diode and 7.75% and 2.24% for n-MOSFET. The simulation by the proposed algorithm can analyze the stationary drift-diffusion equation for applied small signal in high frequency region about 100GHz.

• Journal of IKEEE
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• v.10 no.2 s.19
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• pp.156-160
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• 2006

Capacitance versus voltage (C-V) curves of Ge-nanocrystal (NC)-embedded MOS capacitors with and without a single capping Al2O3 layer are characterized in this work. C-V curves of the Ge-NC-embedded MOS capacitor with the A12O3 layer are counterclockwise in the voltage sweeps, which indicates tile presence of charge storages in the Ge NCs by the tunnelling of charge carriers between the Si substrate and the Ge NCs. In the Ge-NC-embedded MOS capacitor without Al2O3 layer, clockwise hysteresis of the C-V curves and leftward shifts of the flat band voltages are observed for the embedded MOS capacitor without the Al2O3 layer. It is suggested that the characteristics of the C-V curves are due to the charge trapping at oxygen vacancies within a SiO2 layer. In addition, the illumination of the white light enhances the lower capacitance part of the C-V hysteresis. The origin for the enhancement is discussed in this paper.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2013.05a
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• pp.789-790
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• 2013

$Er_2O_3/SiO_2$ double-layer gate dielectric shows low gate leakage current and high capacitance. In this paper, we apply $Er_2O_3/SiO_2$ double-layer gate dielectric as a charge trap layer for the first time. $Er_2O_3/SiO_2$ double-layer thickness is optimized by EDISON Nanophysics simulation tools. Using the simulation results, we fabricated Schottky-barrier silicide source/drain transistor, which has10 um/10um gate length and width, respectively. The nonvolatile device demonstrated very promising characterstics with P/E voltage of 11 V/-11 V, P/E speed of 50 ms/500 ms, data retention of ten years, and endurance of $10^4$ P/E cycles.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.8
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• pp.27-35
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• 1999

A radius of ring resonator is determined by the resonant frequency. Resonant frequencies of resonators with the circumference which is integer times of wave length are not same the expected. In this paper, we suggest the design method of a ring resonator with coupling gap, which has the resonant frequency of desire. The equation which can make reduction of the radius of the resonators depending on the gap space is derived by the method of transmission line analysis. The criterion is suggested to determine the radius of the resonator in accordance with relative permittivity. A ring resonator by the proposed method is as small as one-third of basic ring in size and it has the resonant frequency of desire. T-type coupling line is designed to obtain large attenuation of $S_{11}$ at pass-band. These coupling line capacitances are very lower than the gap capacitances, it does not affect the resonant frequency.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.22 no.2
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• pp.214-219
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• 2011

This paper presents a multi-band low noise amplifier(LNA) with switching operation for 2.4, 3.5 and 5.2 GHz bands using CMOS 0.18 um technology. The proposed circuit uses switching transistors to achieve the input and output matching for multi-band. By using the switching transistors, we can adjust the transconductance, gate inductance and gatesource capacitance at input stage and total output capacitance at output stage. The proposed LNA exhibits gain of 14.2, 12 and 11 dB and noise figure(NF) of 3, 2.9 and 2.8 dB for 2.4, 3.5 and 5.2 GHz, respectively.

• Proceedings of the KSME Conference
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• 2007.05b
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• pp.3027-3032
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• 2007

To understand the complex phenomena performed in steam explosion, the fast and global measurement of the steam distribution is imperative for this extremely rapid transient stimulation of the bubble breakup and coalescence due to turbulent eddies and shock waves. TROI, the experimental facility requests more robust sensor system to meet this requirement. In Europe, researchers are prefer a X-ray method but this method is very expensive and has limited measurement range. There is an alternative technology such as ECT. Because of TROI's geometry, however, we need axial tomography method. This paper reviews image reconstruction algorethms for axial tomography, including Tikhonov regularization and iterative Tikhonov regularization. Axial tomography method is examined by simulation and experiment for typical permittivity distributions. Future works in axial tomography technology is discussed.

• Proceedings of the KIPE Conference
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• 2011.11a
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• pp.55-56
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• 2011

본 논문에서는 직류배전 시스템의 안정적이고 효율적인 운전을 위한 핵심요소인 양방향 충방전이 가능한 컨버터의 새로운 적응제어 기법을 제안한다. 제안한 방법은 소프트 스위칭을 위해 영전류를 검출하는 대신 계산을 통하여 동작 주파수를 결정한다. 따라서 다양한 입출력 조건에서 쉽게 소프트 스위칭이 가능하다. 효율 향상을 위해 다상 인터리빙 기법을 적용하였으며 이는 전류 리플 또한 줄일 수 있어 캐패시턴스를 줄이는 효과를 얻을 수 있다. 이와 같은 방법은 영전류 검출 회로가 필요하지 않기 때문에 양방향 구동 시 회로의 구성이 간편하며 전류 제어의 불안정성이나 노이즈 문제를 완화시킬 수 있다. 제안한 방법은 동작원리 분석을 바탕으로 200W 다상 벅-부스트 컨버터의 하드웨어 실험을 통해 효용성과 타당성을 검증하였다. 넓은 범위에서 고효율을 보였으며 최대 98.5%의 효율을 나타내었다.

• Proceedings of the KIPE Conference
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• 2011.11a
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• pp.65-66
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• 2011

독립부하가 존재하는 계통연계 인버터에서 LCL필터 설계시 계통으로 주입하는 전류뿐만 아니라 독립부하 전압품질도 고려되어야 한다. 또한, LCL필터의 가격과 부피측면을 고려하여 고조파 감쇠율은 기준을 만족하면서 인덕턴스와 캐패시턴스는 가능한 작게 설계하는 것이 중요하다. 본 논문에서는 계통전류의 고조파 기준은 만족하고, LCL필터 모델로부터 구해지는 전달함수를 이용하여 계통연계시와 독립운전시 모두 독립부하의 전압품질이 만족하도록 필터설계를 한다. 또한, 독립부하 전압리플, 인덕터 부피, 무효전류량, 시스템 대역폭에 가중치를 적용한 LCL필터 최적설계 방법을 제안한다.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.2
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• pp.55-61
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• 1999

A soft error rate (SER) simulator for DRAM was developed. In comparison to the other SER simulator using device simulator or Monte Carlo simulator, the proposed simulator substantially reduced the CPU time using an analytical model for the alpha-particle-induced charge collection. By analysing the soft error modes in DRAM, the bit-bar mode was identified as the main cause of soft error. Using the new SER simulator, SER of 256M DRAM was investigated and it was found that the storage capacitance had a 5fF margin.